FW513
No. A1870-1/5
Features
• FET RDS(on)=5.8Ω (typ.), 10V drive
• FRD VF=1.1V (typ.), trr=40ns (typ.)
• Nch MOSFET+FRD
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage VDSS 600 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) ID0.35 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 1.4 A
Allowable Power Dissipation PD
When mounted on ceramic substrate (1000mm
2
×0.8mm) 1unit
1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Continued on next page.
Package Dimensions
unit : mm (typ)
7005A-009
Ordering number : ENA1870
N1710PB TKIM TC-00002515
SANYO Semiconductors
DATA SHEET
FW513
MOSFET : N-Channel Silicon MOSFET
FRD : Ultrahigh-Speed Switching Diode
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Product & Package Information
• Package : SOP8
• JEITA, JEDEC : SC-87, SOT-96
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type : TL Marking
Electrical Connection
W513
LOT No.
TL
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
SANYO : SOP8
1.8 MAX
4.4
6.0
0.80.8
5.0 0.2
0.1
0.3
0.43
1.27
0.7
1.5
14
58
8765
1234
FW513
No. A1870-2/5
Continued from preceding page.
Parameter Symbol Conditions Ratings Unit
[FRD]
Repetitive Peak Reverse Voltage VRRM 600 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 600 V
Average Output Current IO1A
Surge Forward Current IFSM Sine wave, 10ms 4 A
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
[MOSFET]
Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 600 V
Zero-Gate Voltage Drain Current IDSS V
DS=480V, VGS=0V 1 mA
Gate-to-Source Leakage Current IGSS VGS=±24V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3 5 V
Forward Transfer Admittance | yfs |VDS=10V, ID=0.2A 0.48 S
Static Drain-to-Source On-State Resistance
RDS(on) ID=0.2A, VGS=10V 5.8 7.6 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 130 pF
Output Capacitance Coss VDS=30V, f=1MHz 25 pF
Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 4.0 pF
Turn-ON Delay Time td(on) See specifi ed Test Circuit. 9.1 ns
Rise Time tr See specifi ed Test Circuit. 15 ns
Turn-OFF Delay Time td(off) See specifi ed Test Circuit. 18 ns
Fall Time tfSee specifi ed Test Circuit. 19 ns
Total Gate Charge Qg VDS=300V, VGS=10V, ID=0.35A 6.2 nC
Gate-to-Source Charge Qgs VDS=300V, VGS=10V, ID=0.35A 0.9 nC
Gate-to-Drain “Miller” Charge Qgd VDS=300V, VGS=10V, ID=0.35A 3.8 nC
Diode Forward Voltage VSD IS=0.35A, VGS=0V 0.76 1.2 V
[FRD]
Reverse Voltage VRIR=1mA 600 V
Forward Voltage VFIF=1A 1.1 1.3 V
Reverse Current IRVR=600V 10 μA
Reverse Recovery Time trr1I
F=1A, di / dt=100A/μs4050ns
trr2I
F=0.5A, IR=1A 16 ns
Thermal Resistance Rth(j-c) Junction -Case 6 °C / W
Switching Time Test Circuit
[MOSFET]
PW=10μs
D.C.≤1%
P.G 50Ω
G
S
D
ID=0.2A
RL=1000Ω
VDD=200V
VOUT
FW513
VIN
10V
0V
VIN
FW513
No. A1870-3/5
ID -- VDS ID -- VGS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
IT16051
13425 15786 9 11 12 13 14100
VDS=10V
25
°
C
IT15875
042 6 8 101214 1816 20
0
2.0
0.6
0.8
0.2
1.8
1.6
1.4
1.2
1.0
0.4
VGS=5V
8V
6V
10V
7V
Ta= --25°C
75
°
C
15V
| yfs | -- ID
RDS(on) -- VGS RDS(on) -- Ta
SW Time -- ID
Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Drain Current, ID -- A
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Forward T ransfer Admittance, | yfs | -- S
Ciss, Coss, Crss -- VDS
IS -- VSD
IT16054
IT16077
1.21.00.4 0.80.60.2
0.001
0.1
5
7
3
2
3
2
2
1.0
5
7
3
0.01
2
5
7
3
3
0.1
0.01
3
2
2
7
5
7
5
1.0
3
2
0.010.001 23 57 0.1
23 57 23 2
1.0
57
Ta= --25
°
C
75°C
25
°
C
Ta=75°C
25°C
--25°C
VGS=0V
VDS=10V
10
1.0
100
3
2
2
3
7
5
3
2
5
7
5
10
3
100
7
5
7
5
2
0502520 3530 454051015
IT15894
f=1MHz
Coss
Ciss
Crss
IT15893
0.1 2323 57
1.0
td(off)
tf
td(on)
tr
VDD=200V
VGS=10V
7
4
10
9
8
7
6
5
0244 8 12 16 20
IT16052
ID=0.2A
Ta=25°C
IT16053
--60 --40 --20 1600 20 40 60 80 100 120 140
0
20
6
8
2
4
18
16
14
12
10
VGS=10V, I
D=0.2A
[MOSFET] [MOSFET]
[MOSFET] [MOSFET]
[MOSFET] [MOSFET]
[MOSFET] [MOSFET]
FW513
No. A1870-4/5
VGS -- Qg
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
IF -- VF
Forward Current, IF -- A
IFSM -- t
Surge Forward Current, IFSM(Peak) -- A
Time, t -- s
Cj -- VR
Junction Capacitance, Cj -- pF
Reverse Voltage, VR -- V
Forward Voltage, VF -- V Reverse Voltage, VR -- V
IR -- VR
Reverse Current, IR -- μA
0 1.20.4 0.8 1.00.2 0.6 1.4
0.001
0.01
0.1
1.0
10
IT15497
Ta=150°C
--25°C
0.1 1.0
22
10
2
2
10
1.0
3
5
7
5
3
f=100kHz
IT15499
100
2357
357 357
75
°
C
2000 600
IT15498
100
10
0.1
1.0
0.01
0.001 500100 300 400
125°C
Ta=150
°
C
100
°
C
75°C
50
°
C
25°C
100°C
125
°
C
50°C
25°C0°C
70.01 23 7
0.1
052 2337
1.0
5
12
14
8
4
10
6
2
IT15500
[MOSFET]
[MOSFET] [MOSFET]
[FRD] [FRD]
[FRD] [FRD]
IT16075
IT16055
0123 654987
0
2
4
8
12
6
10
14
16 VDS=300V
ID=0.35A
0.001
0.01
2
3
5
7
0.1
2
3
5
7
2
3
5
7
2
3
5
7
1.0
0.1 10
23 5 57 2 100 1000
3
1.0
723 572375
10
IDP=1.4A (PW≤10μs)
ID=0.35A
Operation in
this area is
limited by RDS(on).
100μs
1ms
10ms
100ms
DC operation
IT16076
0
020 40
0.4
0.6
60 80 100 120 140 160
1.0
1.6
1.5
1.2
1.4
0.2
0.8
1.8
When mounted on ceramic substrate (1000mm2×0.8mm) 1unit
Ta=25°C
Single pulse
When mounted on ceramic substrate (1000mm2×0.8mm) 1unit
FW513
No. A1870-5/5PS
This catalog provides information as of November, 2010. Specifi cations and information herein are subject
to change without notice.
Note on usage : Since the FW513 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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