RF & Protection Devices
Data Sheet
Revision 1.1, 2010-06-29
BFP740FESD
Robust High Performance Low Noise Bipolar RF Transistor
Edition 2010-06-29
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP740FESD
Data Sheet 3 Revision 1.1, 2010-06-29
Trademarks of Infineon Technologies AG
BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SensoNor™, SIEGET™, SINDRION™,
SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-03-22
BFP740FESD, Robust High Performance Low Noise Bipolar RF Transistor
Revision History: 2010-06-29, Revision 1.1
Previous Revision: Rev. 1.0
Page Subjects (major changes since last revision)
8, 10 Icmax changed from 35mA to 45mA, PRFin value added
18 - 21 Characteristic DC diagrams and OIP3 diagra added
BFP740FESD
Table of Contents
Data Sheet 4 Revision 1.1, 2010-06-29
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
7 Package Information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table of Contents
BFP740FESD
List of Figures
Data Sheet 5 Revision 1.1, 2010-06-29
Figure 1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 2 BFP740FESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 3 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 18
Figure 4 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 6 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 19
Figure 7 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 20
Figure 8 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 9 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters. . . . . . . . . . . . . . . . . 21
Figure 10 Collector Base Capacitance CCB = f (VCB), f = 1 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 11 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 12 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 23
Figure 13 Maximum Power Gain Gmax = f (VCE), IC = 25 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 23
Figure 14 Input Matching S11 = f ( f ), VCE = 3 V, IC = 6 / 25 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 15 Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . 24
Figure 16 Output Matching S22 = f ( f ), VCE = 3 V, IC = 6 / 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 17 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 6 / 25 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 18 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 26
Figure 19 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . 26
Figure 20 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 21 Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 22 Marking Example (Marking BFP740FESD: T7s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 23 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
List of Figures
BFP740FESD
List of Tables
Data Sheet 6 Revision 1.1, 2010-06-29
Table 1 Quick Reference DC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 2 Quick Reference AC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 3 Maximum Ratings at TA = 25°C (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5 DC Characteristics at TA= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 6 General AC Characteristics at TA= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 7 AC Characteristics, VCE = 3 V, f= 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 8 AC Characteristics, VCE = 3 V, f= 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 9 AC Characteristics, VCE = 3 V, f= 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 10 AC Characteristics, VCE = 3 V, f= 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 11 AC Characteristics, VCE = 3 V, f= 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 12 AC Characteristics, VCE = 3 V, f= 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 13 AC Characteristics, VCE = 3 V, f= 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 14 AC Characteristics, VCE = 3 V, f= 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 15 AC Characteristics, VCE = 3 V, f= 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
List of Tables
1
2
4
3
Product Name Package Pin Configuration Marking
BFP740FESD TSFP-4-1 1 = B 2 = E 3 = C 4 = E T7s
Robust High Performance Low Noise Bipolar RF Transistor
BFP740FESD
Data Sheet 7 Revision 1.1, 2010-06-29
1 Features
• Robust high performance low noise amplifier based on
Infineon´s reliable, high volume SiGe:C wafer technology
• 2 kV ESD robustness (HBM) due to integrated protection circuits
• High maximum RF input power of 21 dBm
• 0.6 dB minimum noise figure typical at 2.4 GHz,
0.8 dB at 5.5 GHz, 6 mA
• 26 dB maximum gain (Gma, Gms) typical at 2.4 GHz,
20.5 dB at 5.5 GHz, 25 mA
• 23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
• Accurate SPICE GP model available to enable effective
design in process (see chapter 6)
• Thin, small, flat, Pb- and halogen free (RoHS compliant) package with visible leads
Applications
As Low Noise Amplifier (LNA) in
• Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB,
Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
and C-band LNB
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
BFP740FESD
Product Brief
Data Sheet 8 Revision 1.1, 2010-06-29
2 Product Brief
The BFP740FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor
(HBT) in a thin, small, flat, 4-pin dual emitter plastic package with visible leads. The device is fitted with internal
protection circuits, which enhance robustness against ESD and high RF input power strongly. The device
combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide
range of wireless applications.
The BFP740FESD is especially well-suited for portable battery-powered applications in which reduced power
consumption is a key requirement. Device design supports collector voltages up to 4.2 V.
Table 1 Quick Reference DC Characteristics at TA = 25°C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Collector emitter breakdown voltage V(BR)CEO 4.2 4.7 – V IC=1mA, IB=0
Open base
Collector base leakage current ICBO ––400nAVCB =2V, IE=0
Open emitter
DC current gain hFE 160 250 400 VCE =3V, IC=25mA
Collector current IC––45mA
Total power dissipation Ptot ––160mWTS≤100 °C
BFP740FESD
Product Brief
Data Sheet 9 Revision 1.1, 2010-06-29
Table 2 Quick Reference AC Characteristics at TA = 25°C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Transition frequency fT–47–GHzVCE =3V, IC=25mA
f=1GHz
VCE = 3 V, f = 2.4 GHz
Maximum Power Gain dB
Low noise operation point Gms –22– IC=6mA
High linearity operation point Gms –26– IC=25mA
Transducer Gain dB ZS= ZL=50 Ω
Low noise operation point S21 –20– IC=6mA
High linearity operation point S21 –22.5– IC=25mA
Minimum Noise Figure dB ZS=Zopt
Minimum noise figure NFmin –0.6– IC=6mA
Associated gain Gass –20.5– IC=6mA
Linearity dBm ZS= ZL=50 Ω
1 dB gain compression point OP1dB –10– IC=25mA
3rd order intercept point OIP3–24.5– IC=25mA
VCE =3V, f= 5.5 GHz
Maximum Power Gain dB
Low noise operation point Gms –19– IC=6mA
High linearity operation point Gma –20.5– IC=25mA
Transducer Gain dB ZS= ZL=50 Ω
Low noise operation point S21 –13.5– IC=6mA
High linearity operation point S21 –15.5– IC=25mA
Minimum Noise Figure dB ZS=Zopt
Minimum noise figure NFmin –0.8– IC=6mA
Associated gain Gass –14.5– IC=6mA
Linearity dBm ZS= ZL=50 Ω
1 dB gain compression point OP1dB –10– IC=25mA
3rd order intercept point OIP3–23.5– IC=25mA
BFP740FESD
Maximum Ratings
Data Sheet 10 Revision 1.1, 2010-06-29
3 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 3 Maximum Ratings at TA = 25°C (unless otherwise specified)
Parameter Symbol Values Unit Note / Test Condition
Min. Max.
Collector emitter voltage VCEO Open base
–4.2V
TA = 25°C
–3.7V
TA = -55 °C
Collector emitter voltage1)
1) Low VCBO due to integrated protection circuits
VCBO Open emitter
–4.9V
TA = 25°C
–4.4V
TA = -55 °C
Collector emitter voltage2)
2) VCES is identical to VCEO due to integrated protection circuits.
VCES Emitter / base shortened
–4.2V
TA = 25°C
–3.7V
TA = -55 °C
Base current3)
3) Sustainable reverse bias current is high due to integrated protection circuits.
IB-10 5 mA –
Collector current IC–45mA–
RF input power PRFin –21dBm–
ESD stress pulse4)
4) ESD robustness is high due to integrated protection circuits.
VESD -2 2 kV HBM, all pins, acc. to
JESD22-A114
Total power dissipation5)
5) TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb.
Ptot –160mWTS≤100 °C
Junction temperature TJ–150°C–
Storage temperature TStg -55 150 °C –
BFP740FESD
Thermal Characteristics
Data Sheet 11 Revision 1.1, 2010-06-29
4 Thermal Characteristics
Figure 1 Total Power Dissipation Ptot = f (Ts)
Table 4 Thermal Resistance
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Junction - soldering point1)
1)For calculation of RthJA please refer to Application Note Thermal Resistance AN 077
RthJS –315–K/W–
0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
160
180
TS [°C]
Ptot [mW]
BFP740FESD
Electrical Characteristics
Data Sheet 12 Revision 1.1, 2010-06-29
5 Electrical Characteristics
5.1 DC Characteristics
5.2 General AC Characteristics
Table 5 DC Characteristics at TA=25°C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Collector emitter breakdown voltage V(BR)CEO 4.2 4.7 – V IC=1mA, IB=0
Open base
Collector emitter leakage current ICES ––400nAVCE =2V, VBE =0
Emitter/base shortened
Collector base leakage current ICBO ––400nAVCB =2V, IE=0
Open emitter
Emitter base leakage current IEBO ––10μAVEB =0.5V, IC=0
Open collector
DC current gain hFE 160 250 400 VCE =3V, IC = 25 mA
Pulse measured
Table 6 General AC Characteristics at TA=25°C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Transition frequency fT–47–GHzVCE =3V, IC=25mA
f=1GHz
Collector base capacitance CCB –0.08–pFVCB =3V, VBE =0
f=1MHz
Emitter grounded
Collector emitter capacitance CCE –0.4–pFVCE =3V, VBE =0
f=1MHz
Base grounded
Emitter base capacitance CEB –0.5–pFVEB =0.4V, VCB =0
f=1MHz
Collector grounded
BFP740FESD
Electrical Characteristics
Data Sheet 13 Revision 1.1, 2010-06-29
5.3 Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
Figure 2 BFP740FESD Testing Circuit
Table 7 AC Characteristics, VCE = 3 V, f=150MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gms –33.5– IC=6mA
High linearity operation point Gms –39– IC=25mA
Transducer gain dB ZS= ZL=50 Ω
Low noise operation point S21 –25– IC=6mA
High linearity operation point S21 –34– IC=25mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –0.5– IC=6mA
Associated gain Gass –31– IC=6mA
Linearity dBm ZS= ZL=50 Ω
1 dB gain compression point OP1dB –10– IC=25mA
3rd order intercept point OIP3–23.5– IC=25mA
OUT
IN
Bias -T
Bias-T
B
(Pin 1)
EC
E
VC
Top View
VB
BFP740FESD
Electrical Characteristics
Data Sheet 14 Revision 1.1, 2010-06-29
Table 8 AC Characteristics, VCE = 3 V, f=450MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gms –29– IC=6mA
High linearity operation point Gms –34– IC=25mA
Transducer gain dB ZS= ZL=50 Ω
Low noise operation point S21 –24.5– IC=6mA
High linearity operation point S21 –32.5– IC=25mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –0.5– IC=6mA
Associated gain Gass –29– IC=6mA
Linearity dBm ZS= ZL=50 Ω
1 dB gain compression point OP1dB –10– IC=25mA
3rd order intercept point OIP3–23.5– IC=25mA
Table 9 AC Characteristics, VCE = 3 V, f= 900 MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gms –26– IC=6mA
High linearity operation point Gms –30.5– IC=25mA
Transducer gain dB ZS= ZL=50 Ω
Low noise operation point S21 –24– IC=6mA
High linearity operation point S21 –29.5– IC=25mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –0.55– IC=6mA
Associated gain Gass –26.5– IC=6mA
Linearity dBm ZS= ZL=50 Ω
1 dB gain compression point OP1dB –10– IC=25mA
3rd order intercept point OIP3–24– IC=25mA
BFP740FESD
Electrical Characteristics
Data Sheet 15 Revision 1.1, 2010-06-29
Table 10 AC Characteristics, VCE = 3 V, f= 1.5 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gms –23.5– IC=6mA
High linearity operation point Gms –28– IC=25mA
Transducer gain dB ZS= ZL=50 Ω
Low noise operation point S21 –22– IC=6mA
High linearity operation point S21 –26– IC=25mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –0.55– IC=6mA
Associated gain Gass –24– IC=6mA
Linearity dBm ZS= ZL=50 Ω
1 dB gain compression point OP1dB –10– IC=25mA
3rd order intercept point OIP3–24– IC=25mA
Table 11 AC Characteristics, VCE = 3 V, f= 1.9 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gms –22.5– IC=6mA
High linearity operation point Gms –27– IC=25mA
Transducer gain dB ZS= ZL=50 Ω
Low noise operation point S21 –21– IC=6mA
High linearity operation point S21 –24.5– IC=25mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –0.55– IC=6mA
Associated gain Gass –22– IC=6mA
Linearity dBm ZS= ZL=50 Ω
1 dB gain compression point OP1dB –10– IC=25mA
3rd order intercept point OIP3–24.5– IC=25mA
BFP740FESD
Electrical Characteristics
Data Sheet 16 Revision 1.1, 2010-06-29
Table 12 AC Characteristics, VCE = 3 V, f= 2.4 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gms –22– IC=6mA
High linearity operation point Gms –26– IC=25mA
Transducer gain dB ZS= ZL=50 Ω
Low noise operation point S21 –20– IC=6mA
High linearity operation point S21 –22.5– IC=25mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –0.6– IC=6mA
Associated gain Gass –20.5– IC=6mA
Linearity dBm ZS= ZL=50 Ω
1 dB gain compression point OP1dB –10– IC=25mA
3rd order intercept point OIP3–24.5– IC=25mA
Table 13 AC Characteristics, VCE = 3 V, f= 3.5 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gms –20.5– IC=6mA
High linearity operation point Gms –24– IC=25mA
Transducer gain dB ZS= ZL=50 Ω
Low noise operation point S21 –17– IC=6mA
High linearity operation point S21 –19.5– IC=25mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –0.65– IC=6mA
Associated gain Gass –17– IC=6mA
Linearity dBm ZS= ZL=50 Ω
1 dB gain compression point OP1dB –10– IC=25mA
3rd order intercept point OIP3–24.5– IC=25mA
BFP740FESD
Electrical Characteristics
Data Sheet 17 Revision 1.1, 2010-06-29
Note:
1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1
2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured results.
3. OIP33 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50
Ω
from 0.2 MHz to 12 GHz.
Table 14 AC Characteristics, VCE = 3 V, f= 5.5 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gms –19– IC=6mA
High linearity operation point Gma –20.5– IC=25mA
Transducer gain dB ZS= ZL=50 Ω
Low noise operation point S21 –13.5– IC=6mA
High linearity operation point S21 –15.5– IC=25mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –0.8– IC=6mA
Associated gain Gass –14.5– IC=6mA
Linearity dBm ZS= ZL=50 Ω
1 dB gain compression point OP1dB –10– IC=25mA
3rd order intercept point OIP3–23.5– IC=25mA
Table 15 AC Characteristics, VCE = 3 V, f=10GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
Low noise operation point Gma –12.5– IC=6mA
High linearity operation point Gma –14– IC=25mA
Transducer gain dB ZS= ZL=50 Ω
Low noise operation point S21 –7– IC=6mA
High linearity operation point S21 –9– IC=25mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –1.45– IC=6mA
Associated gain Gass –9– IC=6mA
Linearity dBm ZS= ZL=50 Ω
1 dB gain compression point OP1dB –8– IC=25mA
3rd order intercept point OIP3–21– IC=25mA
BFP740FESD
Electrical Characteristics
Data Sheet 18 Revision 1.1, 2010-06-29
5.4 Characteristic DC Diagrams
Figure 3 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter
Figure 4 DC Current Gain hFE = f (IC), VCE = 3 V
0
10
20
30
40
50
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
CE
[V]
I
C
[mA]
I
B
= 5µA
I
B
= 25µA
I
B
= 45µA
I
B
= 65µA
I
B
= 85µA
I
B
= 105µA
I
B
= 125µA
I
B
= 145µA
I
B
= 165µA
I
B
= 185µA
I
B
= 205µA
I
B
= 225µA
100
1000
0.1 1 10 100
I
C
[mA]
h
FE
100
1000
0.1 1 10 100
I
C
[mA]
h
FE
BFP740FESD
Electrical Characteristics
Data Sheet 19 Revision 1.1, 2010-06-29
Figure 5 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V
Figure 6 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
0.0001
0.001
0.01
0.1
1
10
100
0.5 0.6 0.7 0.8 0.9
V
BE
[V]
I
C
[mA]
0.00001
0.0001
0.001
0.01
0.1
1
0.5 0.6 0.7 0.8 0.9
V
BE
[V]
I
B
[mA]
BFP740FESD
Electrical Characteristics
Data Sheet 20 Revision 1.1, 2010-06-29
Figure 7 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
BFP740FESD
Electrical Characteristics
Data Sheet 21 Revision 1.1, 2010-06-29
5.5 Characteristic AC Diagrams
Figure 8 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter
Figure 9 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
0 5 10 15 20 25 30 35 40
0
5
10
15
20
25
30
35
40
45
50
IC [mA]
fT [GHz]
4.00V
3.00V
2.50V
2.00V
1.00V
0 5 10 15 20 25 30 35
−5
0
5
10
15
20
25
30
IC [mA]
OIP3 [dBm]
2V, 2.4GHz
3V, 2.4GHz
2V, 5.5GHz
3V, 5.5GHz
BFP740FESD
Electrical Characteristics
Data Sheet 22 Revision 1.1, 2010-06-29
Figure 10 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
Figure 11 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 25 mA
0 0.5 1 1.5 2 2.5 3 3.5 4
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
VCB [V]
Ccb [pF]
0 1 2 3 4 5 6 7 8 9 10
0
5
10
15
20
25
30
35
40
45
50
f [GHz]
G [dB]
Gms
Gma
|S21|2
BFP740FESD
Electrical Characteristics
Data Sheet 23 Revision 1.1, 2010-06-29
Figure 12 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
Figure 13 Maximum Power Gain Gmax = f (VCE), IC = 25 mA, f = Parameter in GHz
0 5 10 15 20 25 30 35 40 45
5
8
11
14
17
20
23
26
29
32
35
38
41
44
IC [mA]
G [dB]
10.00GHz
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
0 1 2 3 4 5
5
8
11
14
17
20
23
26
29
32
35
38
41
44
VCE [V]
G [dB]
10.00GHz
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
BFP740FESD
Electrical Characteristics
Data Sheet 24 Revision 1.1, 2010-06-29
Figure 14 Input Matching S11 = f ( f ), VCE = 3 V, IC = 6 / 25 mA
Figure 15 Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 6 / 25 mA
0
11-1
10
-10
5
-5
2
-2
3
-3
4
-4
0.2
0.4
-0.4
0.6
-0.6
0.8
-0.8
10
5
4
3
2
0.4
0.6
0.8
0.2
-0.2
10 MHz
10 GHz
Step 1 GHz
I
c
= 6 mA
I
c
= 25 mA
0
11-1
10
-10
5
-5
2
-2
3
-3
4
-4
0.2
0.4
-0.4
0.6
-0.6
0.8
-0.8
10
5
4
3
2
0.4
0.6
0.8
0.2
-0.2
10 MHz
10 GHz
Step 1 GHz
I
c
= 6 mA
I
c
= 25 mA
0
11-1
10
10
-10
5
5
-5
2
2
-2
3
3
-3
4
4
-4
0.2
0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
10 GHz
5.5 GHz
2.4 GHz
0.45 GHz
I
c
= 6 mA
I
c
= 25 mA
-0.2
0
11-1
10
10
-10
5
5
-5
2
2
-2
3
3
-3
4
4
-4
0.2
0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
10 GHz
5.5 GHz
2.4 GHz
0.45 GHz
I
c
= 6 mA
I
c
= 25 mA
-0.2
BFP740FESD
Electrical Characteristics
Data Sheet 25 Revision 1.1, 2010-06-29
Figure 16 Output Matching S22 = f ( f ), VCE = 3 V, IC = 6 / 25 mA
Figure 17 Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 6 / 25 mA, ZS = Zopt
0
11-1
10
10
-10
5
5
-5
2
2
-2
3
3
-3
4
4
-4
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
10 MHz
10 GHz
Step 1 GHz
I
c
= 6mA
I
c
= 25mA
0
11-1
10
10
-10
5
5
-5
2
2
-2
3
3
-3
4
4
-4
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
10 MHz
10 GHz
Step 1 GHz
I
c
= 6mA
I
c
= 25mA
0 2 4 6 8 10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
NFmin [dB]
f [GHz]
IC = 6.0mA
IC = 25mA
BFP740FESD
Electrical Characteristics
Data Sheet 26 Revision 1.1, 2010-06-29
Figure 18 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
Figure 19 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA=25°C
0 5 10 15 20 25 30 35
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
NFmin [dB]
Ic [mA]
f = 0.45GHz
f = 10GHz
f = 2.4GHz
f = 5.5GHz
0 5 10 15 20 25 30 35
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.4
4.8
5.2
5.6
6
NF50 [dB]
Ic [mA]
f = 0.45GHz
f = 10GHz
f = 2.4GHz
f = 5.5GHz
BFP740FESD
Simulation Data
Data Sheet 27 Revision 1.1, 2010-06-29
6 Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest
versions before actually starting your design.
You find the BFP740FESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into
these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the
pin configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP740FESD
SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE
GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
BFP740FESD
Package Information TSFP-4-1
Data Sheet 28 Revision 1.1, 2010-06-29
7 Package Information TSFP-4-1
Figure 20 Package Outline
Figure 21 Package Foot Print
Figure 22 Marking Example (Marking BFP740FESD: T7s)
Figure 23 Tape Dimensions
±0.05
0.2
±0.05
1.4
12
±0.05
0.8
1.2±0.05
±0.04
0.55
±0.05
0.2
±0.05
0.15
±0.05
0.2
0.5±0.05
0.5±0.05
43
TSFP-4-1, -2-PO V04
0.35
0.45
0.9
0.5 0.5
TSFP-4-1, -2-FP V04
Marking
Pin 1
Manufacturer
XYs
Marking
Pin 1
Manufacturer
XYs
TSFP-4-1
,
-2-TP V0
5
40.2
1.4
8
Pin 1 1.55 0.7
Published by Infineon Technologies AG
www.infineon.com