SQJ244EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 C MOSFETs FEATURES PowerPAK(R) SO-8L Dual Asymmetric * TrenchFET(R) power MOSFET * AEC-Q101 qualified * 100 % Rg and UIS tested D1 * Optimized for synchronous buck applications D2 15 6. m m 1 13 5. m m 4 G2 Bottom View Top View 2 3 G1 S2 1 S1 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 D2 PRODUCT SUMMARY N-CHANNEL 1 VDS (V) N-CHANNEL 2 40 40 RDS(on) () at VGS = 10 V 0.0110 0.0045 RDS(on) () at VGS = 4.5 V 0.0150 0.0060 20 60 ID (A) Configuration Package Dual PowerPAK SO-8L Dual Asymmetric G1 G2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 Drain-source voltage VDS 40 40 Gate-source voltage VGS Continuous drain current TC = 25 C TC = 125 C Continuous source current (diode conduction) Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 C TC = 125 C Operating junction and storage temperature range ID 20 20 a 60 a 20 a 44 IS 20 a 44 IDM 80 170 IAS 19 30 EAS 18 45 27 48 9 16 PD TJ, Tstg -55 to +175 Soldering recommendations (peak temperature) d, e UNIT V A mJ W C 260 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL N-CHANNEL 1 N-CHANNEL 2 RthJA 85 85 RthJC 5.5 3.1 UNIT C/W Notes a. Package limited b. Pulse test; pulse width 300 s, duty cycle 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S18-0488-Rev. A, 07-May-2018 Document Number: 76423 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ244EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 A N-Ch 1 40 - VGS = 0 V, ID = 250 A N-Ch 2 40 - - VDS = VGS, ID = 250 A N-Ch 1 1.5 2.0 2.5 VDS = VGS, ID = 250 A N-Ch 2 1.5 2.0 2.5 N-Ch 1 - - 100 N-Ch 2 - - 100 VDS = 0 V, VGS = 20 V VGS = 0 V VDS = 40 V N-Ch 1 - - 1 VGS = 0 V VDS = 40 V N-Ch 2 - - 1 VGS = 0 V VDS = 40 V, TJ = 125 C N-Ch 1 - - 50 VGS = 0 V VDS = 40 V, TJ = 125 C N-Ch 2 - - 50 VGS = 0 V VDS = 40 V, TJ = 175 C N-Ch 1 - - 250 VGS = 0 V VDS = 40 V, TJ = 175 C N-Ch 2 - - 250 VGS = 10 V VDS 5 V N-Ch 1 15 - - VGS = 10 V VDS 5 V N-Ch 2 30 - - VGS = 10 V ID = 4 A N-Ch 1 - 0.00890 0.01100 VGS = 10 V ID = 10 A N-Ch 2 - 0.00365 0.00450 VGS = 10 V ID = 4 A, TJ = 125 C N-Ch 1 - - 0.01600 VGS = 10 V ID = 10 A, TJ = 125 C N-Ch 2 - - 0.00640 VGS = 10 V ID = 4 A, TJ = 175 C N-Ch 1 - - 0.01890 - 0.00740 VGS = 10 V ID = 10 A, TJ = 175 C N-Ch 2 - VGS = 4.5 V ID = 3 A N-Ch 1 - 0.01210 0.01500 VGS = 4.5 V ID = 8 A 0.00490 0.00600 N-Ch 2 - VDS = 10 V, ID = 4 A N-Ch 1 - 26 - VDS = 10 V, ID = 10 A N-Ch 2 - 73 - V nA A A S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance S18-0488-Rev. A, 07-May-2018 Rg VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 840 1200 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 2032 2800 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 662 900 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 1256 1700 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 29 40 VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 52 75 VGS = 10 V VDS = 20 V, ID = 2 A N-Ch 1 - 13 20 VGS = 10 V VDS = 20 V, ID = 4 A N-Ch 2 - 28.5 45 VGS = 10 V VDS = 20 V, ID = 2 A N-Ch 1 - 2.4 - VGS = 10 V VDS = 20 V, ID = 4 A N-Ch 2 - 5.2 - VGS = 10 V VDS = 20 V, ID = 2 A N-Ch 1 - 1.5 - VGS = 10 V VDS = 20 V, ID = 4 A N-Ch 2 - 3.3 - N-Ch 1 0.55 1.16 1.8 N-Ch 2 0.25 0.54 0.85 f = 1 MHz pF nC Document Number: 76423 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ244EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Dynamic b Turn-on delay Rise time c time c Turn-off delay time c Fall time c td(on) tr td(off) tf VDD = 20 V, RL = 10 , ID 2 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 10 15 VDD = 20 V, RL = 5 , ID 4 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 15 25 VDD = 20 V, RL = 10 , ID 2 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 4 10 VDD = 20 V, RL = 5 , ID 4 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 4 10 VDD = 20 V, RL = 10 , ID 2 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 19 30 VDD = 20 V, RL = 5 , ID 4 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 26 40 VDD = 20 V, RL = 10 , ID 2 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 9 15 VDD = 20 V, RL = 5 , ID 4 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 9 15 N-Ch 1 - - 80 N-Ch 2 - - 170 IF = 4 A, VGS = 0 V N-Ch 1 - 0.78 1.2 IF = 10 A, VGS = 0 V N-Ch 2 - 0.78 1.2 ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time Body diode peak reverse recovery current tb IRM(REC) IF = 4 A, di/dt = 100 A/s N-Ch 1 - 38 80 IF = 5 A, di/dt = 100 A/s N-Ch 2 - 54 110 IF = 4 A, di/dt = 100 A/s N-Ch 1 - 23 50 IF = 5 A, di/dt = 100 A/s N-Ch 2 - 61 125 IF = 4 A, di/dt = 100 A/s N-Ch 1 - 13 - IF = 5 A, di/dt = 100 A/s N-Ch 2 - 29 - IF = 4 A, di/dt = 100 A/s N-Ch 1 - 25 - IF = 5 A, di/dt = 100 A/s N-Ch 2 - 25 - IF = 4 A, di/dt = 100 A/s N-Ch 1 - -1 - IF = 5 A, di/dt = 100 A/s N-Ch 2 - -1.8 - A V ns nC ns A Notes a. Pulse test; pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0488-Rev. A, 07-May-2018 Document Number: 76423 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ244EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title 120 VGS = 4 V 48 100 24 VGS = 3 V ID - Drain Current (A) 72 10 2 4 6 8 54 36 18 0 0 10000 72 1000 1st line 2nd line 2nd line 90 VGS = 10 V thru 5 V 96 ID - Drain Current (A) Axis Title 10000 TC = -55 C 0 10 TC = 25 C TC = 125 C 0 2 4 10 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 Axis Title 10000 48 TC = 25 C 1000 36 TC = 125 C 24 100 12 RDS(on) - On-Resistance () 0.035 TC = -55 C 1st line 2nd line 2nd line gfs - Transconductance (S) 60 0.028 0.021 VGS = 4.5 V 0.014 0.007 VGS = 10 V 0 0.000 10 0 3 6 9 ID -Drain Current (A) 2nd line 12 0 15 100 100 Crss 10 10 24 32 V DS - Drain-to-Source Voltage (V) 2nd line Capacitance S18-0488-Rev. A, 07-May-2018 40 ID = 2 A V DS = 20 V 8 1000 6 1st line 1st line 2nd line 2nd line C - Capacitance (pF) 1000 Coss 2nd line VGS - Gate-to-Source Voltage (V) Ciss 1000 10000 10 10000 16 70 Axis Title Axis Title 8 28 42 56 ID - Drain Current (A)2nd line On-Resistance vs. Drain Current Transconductance 0 14 4 100 2 0 10 0 3 6 9 12 Qg -Total Gate Charge (nC) 15 2nd line Gate Charge Document Number: 76423 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ244EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 100 10000 ID = 4 A V GS = 4.5 V 1.1 100 0.8 0.5 25 50 1000 TJ = 150 C 1 100 0.1 TJ = 25 C 0.01 10 0 10 1st line 2nd line 1st line 1.4 2nd line IS - Source Current (A) 1000 -50 -25 10000 V GS = 10 V 1.7 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 75 100 125 150 175 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) 2nd line T J - Junction Temperature (C) 2nd line Source Drain Diode Forward Voltage On-Resistance vs. Junction Temperature Axis Title 0.4 10000 0.1 1000 0.027 TJ = 125 C 0.018 100 2nd line VGS(th) Variance (V) 0.036 1st line 2nd line -0.2 ID =5 mA -0.5 ID = 250 A -0.8 0.009 TJ = 25 C 0.000 -1.1 10 0 2 4 6 8 -50 -25 10 0 25 Axis Title Axis Title 1000 55 10000 ID = 1 mA 49 46 2nd line ID - Drain Current (A) IDM limited 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 75 100 125 150 175 Threshold Voltage On-Resistance vs. Gate-to-Source Voltage 52 50 T J - Temperature (C) 2nd line V GS - Gate -to-Source Voltage (V) 2nd line 100 1000 100 s 10 1 ms 10 ms 100 ms, 1001 s, 10 s, DC ID limited 1 Limited by R DS(on) (1) 1st line 2nd line RDS(on) - On-Resistance () 0.045 0.1 43 TC= 25 C Single pulse 40 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) 2nd line Drain Source Breakdown vs. Junction Temperature S18-0488-Rev. A, 07-May-2018 0.01 0.01 (1) BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 76423 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ244EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 Notes: 0.1 0.1 P DM 0.05 t1 t2 t1 1. Duty cycle, D = t2 2. Per unit base = R thJA = 85 C/W 0.02 3. TJM - TA = PDM ZthJA(t) 4. Surface mounted Single pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 Duty cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the graph: - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) is given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions S18-0488-Rev. A, 07-May-2018 Document Number: 76423 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ244EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 100 10000 120 10000 VGS = 10 V thru 4 V 80 100 VGS = 3 V 24 1000 60 1st line 2nd line 48 2nd line ID - Drain Current (A) 1000 72 1st line 2nd line 2nd line ID - Drain Current (A) 96 TC = 25 C 40 100 TC= 125 C 20 TC = -55 C 0 10 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line 10 0 10 2 4 6 8 VGS - Gate-to-Source Voltage (V) 2nd line 10 Transfer Characteristics Output Characteristics Axis Title 10000 0.015 160 TC = 25 C 1000 120 TC = 125 C 80 100 40 2nd line RDS(on) - On-Resistance () TC = -55 C 1st line 2nd line 2nd line gfs - Transconductance (S) 200 10 0 0 8 16 24 32 0.012 0.009 VGS = 4.5 V 0.006 VGS = 10 V 0.003 0.000 40 0 ID - Drain Current (A) 2nd line 16 32 48 ID - Drain Current (A) 2nd line Axis Title Axis Title 100 100 Crss 10 10 8 16 24 32 VDS - Drain-to-Source Voltage (V) 2nd line Capacitance S18-0488-Rev. A, 07-May-2018 40 ID = 4 A VDS = 20 V 8 1000 6 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 1000 1st line 2nd line 2nd line C - Capacitance (pF) Ciss Coss 10000 10 10000 10 000 0 80 On-Resistance vs. Drain Current Transconductance 1000 64 4 100 2 0 10 0 7 14 21 28 Qg - Total Gate Charge (nC) 2nd line 35 Gate Charge Document Number: 76423 7 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ244EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 10000 ID = 8 A VGS = 10 V VGS = 4.5 V 1.1 100 0.8 10 T J = 150 C 1000 1st line 2nd line 1000 1.4 2nd line IS - Source Current (A) 1.7 10000 100 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 1 100 0.1 T J = 25 C 10 0.5 -50 -25 0.01 0 25 50 75 100 125 150 175 T J - Junction Temperature (C) 2nd line 10 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 2nd line Source Drain Diode Forward Voltage On-Resistance vs. Junction Temperature Axis Title 10000 0.4 0.016 0.008 TJ = 125 C 0.004 100 0.000 10 2 4 -0.5 ID = 250 A -0.8 TJ = 25 C 0 ID = 5 mA -0.2 6 8 -1.1 10 -50 -25 0 25 On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title Axis Title 1000 ID = 1 mA 2nd line ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 75 100 125 150 175 TJ - Temperature (C) 2nd line 54 52 50 VGS - Gate-to-Source Voltage (V) 2nd line 50 48 46 10000 IDM limited 100 100 s 1000 10 ID limited 1 1 ms 10 ms 100 ms, 1 s, 100 10 s, DC Limited by R DS(on)(1) 1st line 2nd line 1000 0.012 2nd line VGS(th) Variance (V) 0.1 1st line 2nd line 2nd line RDS(on) - On-Resistance () 0.020 0.1 TC = 25 C Single pulse 44 -50 -25 0 25 50 75 100 125 150 175 T J - Junction Temperature (C) 2nd line Drain Source Breakdown vs. Junction Temperature S18-0488-Rev. A, 07-May-2018 BVDSS limited 10 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) (1) V GS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 76423 8 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ244EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 85 C/W 0.02 3. TJM - TA = PDM ZthJA(t) Single pulse 4. Surface mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 Duty cycle = 0.5 1000 0.2 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the graph: - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) is given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76423. S18-0488-Rev. A, 07-May-2018 Document Number: 76423 9 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000