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Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Optimized for synchronous buck applications
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
PRODUCT SUMMARY
N-CHANNEL 1 N-CHANNEL 2
VDS (V) 40 40
RDS(on) () at VGS = 10 V 0.0110 0.0045
RDS(on) () at VGS = 4.5 V 0.0150 0.0060
ID (A) 20 60
Configuration Dual
Package PowerPAK SO-8L Dual Asymmetric
PowerPAK® SO-8L Dual Asymmetric
Bottom View
2
G1
3
S2
4
G2
1
S1
D2
D1
Top View
1
6.15 mm
5.13 mm
1
6.1
5
m
m
5
13
m
m
N-Channel 1 MOSFET
D1
G1
S1
N-Channel 2 MOSFET
D2
G2
S2
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT
Drain-source voltage VDS 40 40 V
Gate-source voltage VGS ± 20
Continuous drain current TC = 25 °C ID
20 a60 a
A
TC = 125 °C 20 a 44
Continuous source current (diode conduction) IS20 a 44
Pulsed drain current bIDM 80 170
Single pulse avalanche current L = 0.1 mH IAS 19 30
Single pulse avalanche energy EAS 18 45 mJ
Maximum power dissipation bTC = 25 °C PD
27 48 W
TC = 125 °C 9 16
Operating junction and storage temperature range TJ, Tstg -55 to +175 °C
Soldering recommendations (peak temperature) d, e 260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT
Junction-to-ambient PCB mount cRthJA 85 85 °C/W
Junction-to-case (drain) RthJC 5.5 3.1
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS
VGS = 0 V, ID = 250 μA N-Ch 1 40 - -
V
VGS = 0 V, ID = 250 μA N-Ch 2 40 - -
Gate-source threshold voltage VGS(th)
VDS = VGS, ID = 250 μA N-Ch 1 1.5 2.0 2.5
VDS = VGS, ID = 250 μA N-Ch 2 1.5 2.0 2.5
Gate-source leakage IGSS V
DS = 0 V, VGS = ± 20 V N-Ch 1 - - ± 100 nA
N-Ch 2 - - ± 100
Zero gate voltage drain current IDSS
VGS = 0 V VDS = 40 V N-Ch 1 - - 1
μA
VGS = 0 V VDS = 40 V N-Ch 2 - - 1
VGS = 0 V VDS = 40 V, TJ = 125 °C N-Ch 1 - - 50
VGS = 0 V VDS = 40 V, TJ = 125 °C N-Ch 2 - - 50
VGS = 0 V VDS = 40 V, TJ = 175 °C N-Ch 1 - - 250
VGS = 0 V VDS = 40 V, TJ = 175 °C N-Ch 2 - - 250
On-state drain current a I
D(on) VGS = 10 V VDS 5 V N-Ch 1 15 - - A
VGS = 10 V VDS 5 V N-Ch 2 30 - -
Drain-source on-state resistance a R
DS(on)
VGS = 10 V ID = 4 A N-Ch 1 -
0.00890 0.01100
VGS = 10 V ID = 10 A N-Ch 2 -
0.00365 0.00450
VGS = 10 V ID = 4 A, TJ = 125 °C N-Ch 1 -
- 0.01600
VGS = 10 V ID = 10 A, TJ = 125 °C N-Ch 2 -
- 0.00640
VGS = 10 V ID = 4 A, TJ = 175 °C N-Ch 1 -
- 0.01890
VGS = 10 V ID = 10 A, TJ = 175 °C N-Ch 2 -
- 0.00740
VGS = 4.5 V ID = 3 A N-Ch 1 -
0.01210 0.01500
VGS = 4.5 V ID = 8 A N-Ch 2 -
0.00490 0.00600
Forward transconductance b gfs
VDS = 10 V, ID = 4 A N-Ch 1 -
26 -
S
VDS = 10 V, ID = 10 A N-Ch 2 -
73 -
Dynamic b
Input capacitance Ciss VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 840 1200
pF
VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 2032 2800
Output capacitance Coss VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 662 900
VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 1256 1700
Reverse transfer capacitance Crss VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 1 - 29 40
VGS = 0 V VDS = 25 V, f = 1 MHz N-Ch 2 - 52 75
Total gate charge c Qg VGS = 10 V VDS = 20 V, ID = 2 A N-Ch 1 - 13 20
nC
VGS = 10 V VDS = 20 V, ID = 4 A N-Ch 2 - 28.5 45
Gate-source charge c Qgs VGS = 10 V VDS = 20 V, ID = 2 A N-Ch 1 - 2.4 -
VGS = 10 V VDS = 20 V, ID = 4 A N-Ch 2 - 5.2 -
Gate-drain charge c Qgd VGS = 10 V VDS = 20 V, ID = 2 A N-Ch 1 - 1.5 -
VGS = 10 V VDS = 20 V, ID = 4 A N-Ch 2 - 3.3 -
Gate resistance Rg f = 1 MHz N-Ch 1 0.55 1.16 1.8
N-Ch 2 0.25 0.54 0.85
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Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Dynamic b
Turn-on delay time c td(on)
VDD = 20 V, RL = 10 ,
ID 2 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 10 15
ns
VDD = 20 V, RL = 5 ,
ID 4 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 15 25
Rise time c tr
VDD = 20 V, RL = 10 ,
ID 2 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 4 10
VDD = 20 V, RL = 5 ,
ID 4 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 4 10
Turn-off delay time c td(off)
VDD = 20 V, RL = 10 ,
ID 2 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 19 30
VDD = 20 V, RL = 5 ,
ID 4 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 26 40
Fall time c tf
VDD = 20 V, RL = 10 ,
ID 2 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 9 15
VDD = 20 V, RL = 5 ,
ID 4 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 9 15
Source-Drain Diode Ratings and Characteristics b
Pulsed current a ISM
N-Ch 1 - - 80 A
N-Ch 2 - - 170
Forward voltage VSD
IF = 4 A, VGS = 0 V N-Ch 1 - 0.78 1.2 V
IF = 10 A, VGS = 0 V N-Ch 2 - 0.78 1.2
Body diode reverse recovery time trr
IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 38 80 ns
IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 54 110
Body diode reverse recovery charge Qrr
IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 23 50 nC
IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 61 125
Reverse recovery fall time ta
IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 13 -
ns
IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 29 -
Reverse recovery rise time tb
IF = 4 A, di/dt = 100 A/μs N-Ch 1 - 25 -
IF = 5 A, di/dt = 100 A/μs N-Ch 2 - 25 -
Body diode peak reverse recovery
current IRM(REC)
IF = 4 A, di/dt = 100 A/μs N-Ch 1 - -1 - A
IF = 5 A, di/dt = 100 A/μs N-Ch 2 - -1.8 -
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
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N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
10
100
1000
10000
0
24
48
72
96
120
0246810
Axis Title
1st line
2nd line
2nd line
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
VGS = 10 V thru 5 V
VGS = 3 V
VGS = 4 V
10
100
1000
10000
0
12
24
36
48
60
03691215
Axis Title
1st line
2nd line
2nd line
gfs - Transconductance (S)
ID -Drain Current (A)
2nd line
T
C
= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
10
100
1000
0 8 16 24 32 40
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
Crss
Coss
Ciss
10
10000
0
18
36
54
72
90
0246810
Axis Title
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
TC = 25 °C
TC = 125 °C
TC = -55 °C
0.000
0.007
0.014
0.021
0.028
0.035
0 1428425670
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)2nd line
VGS = 10 V
VGS = 4.5 V
10
100
1000
10000
0
2
4
6
8
10
03691215
Axis Title
1st line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg -Total Gate Charge (nC)
2nd line
I
D
= 2 A
VDS = 20 V
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N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Source Drain Diode Forward Voltage
Threshold Voltage
Safe Operating Area
10
100
1000
10000
0.5
0.8
1.1
1.4
1.7
2.0
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
ID= 4 A VGS = 10 V
VGS =4.5 V
10
100
1000
10000
0.000
0.009
0.018
0.027
0.036
0.045
0246810
Axis Title
1st line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate -to-Source Voltage (V)
2nd line
TJ= 25 °C
TJ= 125 °C
40
43
46
49
52
55
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
TJ - Junction Temperature (°C)
2nd line
I
D
= 1 mA
10
100
1000
10000
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source -to-Drain Voltage (V)
2nd line
TJ= 150 °C
TJ= 25 °C
-1.1
-0.8
-0.5
-0.2
0.1
0.4
-50 -25 0 25 50 75 100 125 150 175
2nd line
VGS(th) Variance (V)
TJ- Temperature (°C)
2nd line
ID= 250 µA
ID=5 mA
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
IDM limited
Limited by RDS(on)(1)
TC= 25 °C
Single pulse BVDSS limited
100 ms, 1 s,
10 s, DC
10 ms
1 ms
100 µs
IDlimited
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N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the graph:
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
10-3 10-2 110 60010-1
10-4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty cycle, D =
2. Per unit base = R
thJA
= 85 °C/W
3. T
JM -
T
A
= PDM
Z
th
JA(t
)
t
1
t
2
t
1
t
2
Notes:
4. Surface mounted
PDM
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
0.2
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N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
10
100
1000
10000
0
24
48
72
96
120
0246810
Axis Title
1st line
2nd line
2nd line
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
2nd line
VGS = 10 V thru 4 V
VGS = 3 V
10
100
1000
10000
0
40
80
120
160
200
0 8 16 24 32 40
Axis Title
1st line
2nd line
2nd line
gfs - Transconductance (S)
ID- Drain Current (A)
2nd line
T
C
= 25 °C
TC=-55 °C
TC= 125 °C
10
100
1000
10000
10
100
1000
10 000
0 8 16 24 32 40
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
2nd line
Crss
Coss
Ciss
10
100
1000
10000
0
20
40
60
80
100
0246810
Axis Title
1st line
2nd line
2nd line
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
2nd line
TC= 25 °C
TC= -55 °C
TC= 125 °C
0.000
0.003
0.006
0.009
0.012
0.015
0 1632486480
2nd line
RDS(on) - On-Resistance (Ω)
ID - Drain Current (A)
2nd line
VGS = 10 V
VGS = 4.5 V
10
100
1000
10000
0
2
4
6
8
10
0 7 14 21 28 35
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
2nd line
I
D
= 4 A
VDS = 20 V
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Source Drain Diode Forward Voltage
Threshold Voltage
Safe Operating Area
10
100
1000
10000
0.5
0.8
1.1
1.4
1.7
2.0
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
2nd line
ID= 8 A VGS = 10 V
VGS =4.5 V
10
100
1000
10000
0.000
0.004
0.008
0.012
0.016
0.020
0246810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
2nd line
TJ= 25 °C
TJ= 125 °C
44
46
48
50
52
54
-50 -25 0 25 50 75 100 125 150 175
Axis Title
2nd line
VDS - Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
2nd line
I
D
= 1 mA
10
100
1000
10000
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
2nd line
T
J
= 150 °C
TJ= 25 °C
-1.1
-0.8
-0.5
-0.2
0.1
0.4
-50 -25 0 25 50 75 100 125 150 175
2nd line
VGS(th) Variance (V)
T
J
- Temperature (°C)
2nd line
ID= 250 µA
ID= 5 mA
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified
IDM limited
Limited by R DS(on)
(1)
TC= 25 °C
Single pulse BVDSS limited
100 ms, 1 s,
10 s, DC
10 ms
1 ms
100 µs
IDlimited
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the graph:
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76423.
10-3 10-2 110600
10-1
10 -4 100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty cycle, D =
2. Per unit base = R
thJA
= 85 °C/W
3. T
JM -
T
A
= PDM
Z
th
JA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface mounted
PDM
10
100
1000
10000
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Axis Title
1st line
2nd line
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
2nd line
0.1
0.05
0.02
Single pulse
Duty cycle = 0.5
0.2
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
