LITE-ON SEMICONDUCTOR TL0640M thru TL3500M Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 50 Amperes VDRM IPP FEATURES DO-15 Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 50A @10/1000us or 250A @8/20us High off state Impedance and low on state voltage Plastic material has UL flammability classification 94V-0 A A B C D DO-15 Min. Max. Dim. A 25.4 5.80 7.60 B 0.71 C 0.86 2.60 3.60 D All Dimensions in millimeter MECHANICAL DATA Case : JEDEC DO-15 Molded plastic Polarity : Denotes none cathode band Weight : 0.4 grams MAXIMUM RATINGS CHARACTERISTICS SYMBOL VALUE UNIT Non-repetitive peak impulse current @ 10/1000us IPP 50 A Non-repetitive peak On-state current @ 8.3ms (one half cycle) ITSM 25 A TJ ; TSTG -55 to +150 SYMBOL VALUE UNIT Junction to leads Rth(J-L) 60 /W Junction to ambient on print circuit (on recommended pad layout) Rth(J-A) 100 /W VBR/TJ 0.1 %/ Junction and storage temperature range THERMAL RESISTANCE CHARACTERISTICS Typical positive temperature coefficient for brekdown voltage WAVEFORM STANDARD IPP (A) 2/10 us GR-1089-CORE 300 8/20 us IEC 61000-4-5 250 10/160 us FCC Part 68 120 10/700 us ITU-T K20/21 100 10/560 us FCC Part 68 75 10/1000 us GR-1089-CORE 50 IPP, PEAK PULSE CURRENT (%) MAXIMUM RATED SURGE WAVEFORM 100 Peak value (Ipp) tr= rise time to peak value tp= Decay time to half value Half value 50 0 tr tp TIME REV. 0, 09-Oct-2001, KDWD04 ELECTRICAL CHARACTERISTICS @ TA= 25 unless otherwise specified TL0640M thru TL3500M PARAMETER RATED REPETITIVE OFF-STATE VOLTAGE OFF-STATE LEAKAGE CURRENT @ VDRM BREAKOVER VOLTAGE ON-STATE VOLTAGE @ IT=1.0A SYMBOL VDRM IDRM VBO UNITS Volts uA LIMIT Max TL0640M BREAKOVER CURRENT HOLDING CURRENT VT IBO- IBO+ IH- IH+ Co Volts Volts mA mA mA mA pF Max Max Max Min Max Min Max Typ 58 5 77 3.5 50 800 150 800 140 TL0720M 65 5 88 3.5 50 800 150 800 140 TL0900M 75 5 98 3.5 50 800 150 800 140 TL1100M 90 5 130 3.5 50 800 150 800 90 TL1300M 120 5 160 3.5 50 800 150 800 90 TL1500M 140 5 180 3.5 50 800 150 800 90 TL1800M 160 5 220 3.5 50 800 150 800 90 TL2300M 190 5 265 3.5 50 800 150 800 60 TL2600M 220 5 300 3.5 50 800 150 800 60 TL3100M 275 5 350 3.5 50 800 150 800 60 TL3500M 320 5 400 3.5 50 800 150 800 60 SYMBOL I PARAMETER VDRM Stand-off Voltage IDRM Leakage current at stand-off voltage VBR Breakdown voltage IBR Breakdown current IPP IBO IH IBR VBO IBO Breakover voltage IDRM V Breakover current VT IH Holding current VT On state voltage IPP Peak pulse current CO Off state capacitance OFF-STATE CAPACITANCE VBR VDRM VBO Note: 1 Note: 2 REV. 0, 09-Oct-2001, KDWD04 NOTES: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD Triggers but does not return correctly to high-resistance state. The Surge recovery time does not exceed 30ms. 2. Off-state capacitance measured at f=1.0MHz; 1.0VRMS signal; VR=2VDC bias. RATING AND CHARACTERISTICS CURVES TL0640M thru TL3500M FIG.1 - OFF STATE CURRENT vs JUNCTION TEMPERATURE FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 1.20 NORMALIZED BREAKDOWN VOLTAGE I(DRM), OFF STATE CURRENT (uA) 100 10 1.0 VDRM=50V 0.1 0.01 0.001 -25 0 25 50 75 100 125 1.15 1.10 VBR (TJ) VBR (TJ=25) 1.05 1.0 0.95 0.90 -50 150 TJ, JUNCTION TEMPERATURE () I(T), ON STATE CURRENT NORMALIZED BREAKOVER VOLTAGE 75 100 125 150 175 100 VBO (TJ) VBO (TJ=25) 1.0 10 TJ = 25 1 -25 0 25 50 75 100 125 150 1 175 TJ, JUNCTION TEMPERATURE () 10 V (T); ON STATE VOLTAGE FIG. 5 - RELATIVE VARIATION OF HOLDING CURRENT vs JUNCTION TEMPERATURE FIG. 6 - RELATIVE VARIATION OF JUNCTION CAPACITANCE vs REVERSE VOLTAGE BIAS 1 1.6 1.4 NORMALIZE CAPACITANCE NORMALIZED HOLDING CURRENT 50 25 FIG. 4 - ON STATE CURRENT vs ON STATE VOLTAGE 1.10 0.95 -50 0 TJ, JUNCTION TEMPERATURE () FIG. 3 - RELATIVE VARIATION OF BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE 1.05 -25 1.2 1 0.8 IH (TJ) IH (TJ=25) 0.6 CO(VR) Tj =25 f=1MHz VRMS = 1V CO(VR = 1V) 0.4 0.2 0.1 -50 -25 0 25 50 75 TJ, JUNCTION TEMPERATURE () 100 125 1 10 100 VR, REVERSE VOLTAGE REV. 0, 09-Oct-2001, KDWD04 TYPICAL CIRCUIT APPLICATIONS TL0640M thru TL3500M FUSE RING TELECOM EQUIPMENT TSPD 1 E.G. MODEM TIP RING PTC TSPD 1 TELECOM EQUIPMENT TSPD 2 E.G. ISDN TIP PTC RING PTC TSPD 2 TELECOM EQUIPMENT TSPD 1 TSPD 3 TIP E.G. LINE CARD PTC The PTC (Positive Temperature Coefficient) is an overcurrent protection device REV. 0, 09-Oct-2001, KDWD04