TL0640M thru TL3500M
FEATURES
Oxide Glass Passivat ed Junction
Bidirectional protection in a single device
Surge capabilities up to 50A @10/1000us or 250A
@8/20us
High off state Impedance and low on state voltage
Plastic material ha s UL flammability classifica tio n
94V-0
MECHANICAL DATA
Case : JEDEC DO-15 Molde d plastic
Po lari ty : Den ote s n on e ca tho de ba nd
Weight : 0.4 grams
SURFA CE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
VDRM -
58 to 320
Volts
IPP -
50
Amperes
MAXIMUM RATINGS
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM
THERM AL RESISTANCE
℃
/W
UNIT
SYMBOL
%/
℃
Juncti on to leads
CHARACTERISTICS
Typical positiv e temperature coefficient for brekdown voltage
Rth
(J-L)
△
V
BR
/
△
T
J
0.1
VALUE
60
100
Junction to ambient on print circuit (on recommended pad layout)
Rth
(J-A)
℃
/W
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Par t 68
ITU-T K20/21
FCC Par t 68
GR-1089-CORE
I
PP
(A)
300
250
120
100
75
50
I
PP
, PEAK PULSE CURRENT (%)
100
50
0tr tp
TIME
Half value
Peak value (Ipp)
tr= ri se ti m e to p ea k val ue
tp= Decay time to half v a lue
SEMICONDUCTOR
LITE-ON
Bi-Directional
UNIT
SYMBOL
Non-repetitive peak impulse current @ 10/1000us
CHARACTERISTICS
I
PP
I
TSM
A
A
VALUE
50
25
Non-repetitive peak On-state current @ 8. 3ms (one half cycle)
Junction and storage temperature range
T
J ; TSTG
-55 to +150
℃
DO-15
Max.
All Dimensions in millimeter
Min.
D O-15
Dim.
A
D
C
B 25.4 7.60
-
5.80
0.71
2.60 3.60
0.86
A
C
D
A
B
REV. 0, 09-O ct-200 1, KDWD04