TL0640M thru TL3500M
FEATURES
Oxide Glass Passivat ed Junction
Bidirectional protection in a single device
Surge capabilities up to 50A @10/1000us or 250A
@8/20us
High off state Impedance and low on state voltage
Plastic material ha s UL flammability classifica tio n
94V-0
MECHANICAL DATA
Case : JEDEC DO-15 Molde d plastic
Po lari ty : Den ote s n on e ca tho de ba nd
Weight : 0.4 grams
SURFA CE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
VDRM -
58 to 320
Volts
IPP -
50
Amperes
MAXIMUM RATINGS
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM
THERM AL RESISTANCE
℃
/W
UNIT
SYMBOL
%/
℃
Juncti on to leads
CHARACTERISTICS
Typical positiv e temperature coefficient for brekdown voltage
Rth
(J-L)
△
V
BR
/
△
T
J
0.1
VALUE
60
100
Junction to ambient on print circuit (on recommended pad layout)
Rth
(J-A)
℃
/W
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Par t 68
ITU-T K20/21
FCC Par t 68
GR-1089-CORE
I
PP
(A)
300
250
120
100
75
50
I
PP
, PEAK PULSE CURRENT (%)
100
50
0tr tp
TIME
Half value
Peak value (Ipp)
tr= ri se ti m e to p ea k val ue
tp= Decay time to half v a lue
SEMICONDUCTOR
LITE-ON
Bi-Directional
UNIT
SYMBOL
Non-repetitive peak impulse current @ 10/1000us
CHARACTERISTICS
I
PP
I
TSM
A
A
VALUE
50
25
Non-repetitive peak On-state current @ 8. 3ms (one half cycle)
Junction and storage temperature range
T
J ; TSTG
-55 to +150
℃
DO-15
Max.
All Dimensions in millimeter
Min.
D O-15
Dim.
A
D
C
B 25.4 7.60
-
5.80
0.71
2.60 3.60
0.86
A
C
D
A
B
REV. 0, 09-O ct-200 1, KDWD04
SYMBOL
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
PARAMETER
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Holding current Note: 1
I
H
V
T
I
PP
C
O
On state voltage
Peak pulse current
Off state capacitance Note: 2
Breakover current V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
V
I
NOTES: 1. I
H
> (V
L
/R
L
) If this criterion is not obeyed, the T
SPD
Triggers but does not return correctly to high-resistance state.
The Surge recovery time does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz; 1.0V
RMS
signal; VR=2V
DC
bias.
TL0640M
TL0720M
75
58
65
TL0900M
TL1100M
TL1300M
TL1500M
TL1800M
TL2300M
TL2600M
TL3100M
TL3500M
140
90
120
220
160
190
275
320
5
5
5
5
5
5
5
5
5
5
5
98
77
88
180
130
160
300
220
265
350
400
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
150
150
150
150
150
150
150
150
150
150
150
140
140
140
90
90
90
60
90
60
60
60
50
50
50
50
50
50
50
50
50
50
50
Max
PARAMETER
SYMBOL
UNITS
LIMIT
RATED
REPETITIVE
OFF-STATE
VOLTAGE
OFF-STATE
LEAKAGE
CURRENT
@ V
DRM
BREAKOVER
VOLTAGE
ON-STATE
VOLTAGE
@ I
T
=1.0A
HOLDING
CURRENT OFF-STATE
CAPACITANCE
Max Max Max Min Max Min Typ
V
DRM
I
DRM
V
BO
V
T
I
BO
-I
BO+
I
H-
Co
Volts uA Volts Volts mA mA mA pF
ELECTRIC A L CHARACTERI STICS @ TA= 25
℃
℃℃
℃
unless otherwise specified
TL0640M thr u TL3500M
BREAKOVER
CURRENT
800
800
800
800
800
800
800
800
800
800
800
Max
I
H+
mA
800
800
800
800
800
800
800
800
800
800
800
REV. 0, 09-O ct-200 1, KDWD04
FI G .1 - OFF STATE CU RRENT vs J U NCTI O N T EM PERATUR E
I(
DRM)
, OFF STATE CURRENT (uA)
T
J
, JUNCTION TEMPERATURE (
℃
)
VDRM=50V
100
10
1.0
0.1
0.001
0.01
-25 025 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
-50 -25 025 50 75 125 150
NORMALIZED B R EAKDOWN VOLTAG E
1.20
1.10
1.05
1.0
0.90
0.95
1.15
VBR (TJ)
VBR (TJ=25
℃
)
100 175
FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLTAGE
vs JUNCTION TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
℃
)
-50 -25 025 50 75 125 150
NORMA LIZED BREA KOVER VOLTAG E
1.10
1.05
1.0
0.95 100 175
FIG. 3 - RELATIVE VARIATION OF BREAKOVER VOLT AGE
vs JUNCTION TEMPERATURE
V (T); ON STATE VOLTAGE
I
(T)
, ON ST ATE CURRENT
FIG. 4 - ON STATE CURRENT vs ON STATE VOLTAGE
T
J
, JUNCTION TEMPERATURE (
℃
)
NORMALIZED HOLDING CURRENT
FIG. 5 - RELATIVE VARIATION OF HOLDING CURRENT
vs JUNCTION TEMP ERATURE
VR, REVERSE VOLTAGE
NORMALIZE CAPACITANCE
FIG. 6 - RELATIVE VARIATION OF JUNCTION
CAPACITANCE vs REVERSE VOLTAG E BIAS
RATING AND CHARACT ERISTICS CURVES
TL0640M thr u TL3500M
-50 -25 0 25 50 75 100 125
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1 10 100
0.1
1
Tj =25
℃
f=1MHz
VRMS = 1V
CO(VR)
CO(VR = 1V )
IH (TJ)
IH (TJ=25
℃
)
VBO (TJ)
VBO (TJ=25
℃
)
110
1
10
100
T
J
= 25
℃
REV. 0, 09-Oct-2001, KDWD04
The PTC (Positive Temperature Coefficient) is an overcurrent protection device
TELECOM
EQUIPMENT
E.G. MODEM
FUSE
TSPD 1
RING
TIP
TELECOM
EQUIPMENT
E.G. LINE
CARD
RING
TIP
TSPD 2
TSPD 3
PTC
PTC
TSPD 1
TELECOM
EQUIPMENT
E.G. ISDN
TSPD 1
RING
TIP
TSPD 2
PTC
PTC
TYPICAL CIRCUIT APPLICATIONS
TL0640M thr u TL3500M
REV. 0, 09-Oct-2001, KDWD04
