SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) Ait 1627A Unit in mm APPLICATIONS 5.IMAX. a Driver Stage Amplifier Applications. w Voltage Amplifier Applications. 2 0.75MAX. LL, tt rOMAX, (Vt t FEATURES O.S0MAX. o| x) Z | 2) z| 5 QS @ Complementary to KTA817A @Driver Stage Application of 30 to 35 Watts Amplifiers. 127 x ~ 2.54 S La ese} ti +L 1. EMITTER 2. COLLECTOR 3. BASE TEDEC TO 92M0D B MAXIMUM RATINGS (Ta=25C) CHARACTERISTIC ||SYMBOL] RATING UNIT CHARACTERISTIC |SYMBOL|, RATING UNIT] Collector-Base Voltage Vso 80 V Emitter Current Te : 400 mA |Collector-Emitter Voltage |. Veo 80 V | {Collector Dissipation | Pe 800 | mW Emitter-Base Voltage Vepo 5 V.||Junction Temperature T; 150 Collector Current Ic 400 mA ||Storage Temperature Tstg |-55~150| C B ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL CONDITION MIN.| TYP, MAX] UNIT. Collector Cutoff Current : leo | Vee =50V,1,=0 } = | 100 | nA Emitter Cutoff Current lezo Veg =5V;1, =0 7 - |} 100] nA CoHector-Emitter Breakdown Voltage} Visocro | lo =SmA 80 _ _ V heen Veg =2V,1=50mA | 70 | | 240 DC Current Gain S. hesw) Ver =2V, f,-=200mA 40 = | Collector-Emitter Saturation Voltage | Ver. | Ie =200mA,1,=20mA_ _ -.; 04 ) V Base-Emitter Voltage Vee Veg =2V,1-=5mA 055] | 08 | V Transition Frequency {> Veg =10V,1,.=10mA - ;.100) | MHz Collector Output Capacitance Cob Vos =10V, f=1MHz =. 10 pF Mi NOTE: According to hre,_(1), Classified as follows. 0 70140 Y 120 - 240 ol : KEC