Standard Power MOSFETs 2N6767, 2N6768 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 12A and 14A, 350V - 400V osion = 0.40 and 0.30 Features: SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance @ Majority carrier device The 2N6767 and 2N6768 are n-channel enhancement-mode silicon-gate power MOS field-effect transistors designed for applications such as switching regulators, switching conver- ters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The 2N6767 and 2N6768 are supplied in the JEDEC TO- 204AA steel package. MAXIMUM RATINGS, Absolute-Maximum Values: *DRAIN-SOURCE VOLTAGE ............. eee DRAIN-GATE VOLTAGE, Rgs = 1 MQ *GATE-SOURCE VOLTAGE ...........---..05- DRAIN CURRENT, RMS Continuous At Te =25C 10.2... cee At Te = 100C .........00.. Pulsed *POWER DISSIPATION At To = 25C wo ccc cc ccc cece ccc eect eee eeees Above Tc = 25C, Derate Linearly ........... INDUCTIVE CURRENT, CLAMPED (L = 100yvH) OPERATING AND STORAGE TEMPERATURE . *LEAD TEMPERATURE (0.063 in. or 1.6 mm from case for 10S) ........ ec ccc e cece eee eee *JEDEC REGISTERED DATA 3-496 File Number 1898 N-CHANNEL ENHANCEMENT MODE 5 s 92CS -33741 TERMINAL DIAGRAM TERMINAL DESIGNATION DRAIN SOURCE (FLANGE ) Os Oo f GATE 92CS-37801 JEDEC TO-204AA 2N6767 2N6768 350 400 Vv 350 400 Vv +20 _.:~V 12 14 A 7.75 9 A 20 25 A 150 W 1.2 WC 20 25 A ____-__ -56 to +150 C 300 CStandard Power MOSFETs 2N6767, 2N6768 Electrical Characteristics @ Ty; = 25C (Unless Otherwise Specified) Parameter Type Min. Typ. Max. Units Test Conditions BVpgs _Orain ~ Source Breakdown Voltage | 2NG767 | 350 = = Vv | Vgg<0 2N6768 400 - - Vv Ip = 1.0mA Vasith) Gate Threshold Voltage ALL | 2.0 - 4.0 Vv | Vpg = Vag. Ip = 1 mA IGsse Gate Body Leakage Forward ALL - - 100 nA Ves 7 20V \gssp Gate Body Leakage Reverse ALL - - 100 nA | Veg * -20V loss Zero Gate Voltage Orain Current ALL - 0.1 1.0 mA | Vog = Max. Rating, Vgsg = 0 - 0.2 4.0 mA | Vig = Max. Rating, Vgg = 0, Te * 125C Vos(on) Static Drain-Source On-State 2N6767 - > 5.4 Vv Vigs = 10V, Ip = 12A Voltage (7) QNeves | = se* | V | Vgg=10V,tp~ 14A Rpston) Static Drain-Source On-State 2N6767 - 0.3 04 2 Veg * 10V, Ip = 7.754 2n6768 | 0.25 | 03 2 | Vgg = t0V, Ip = 9.08 Roston) Rasisunce C On-State 2N6767 - - 0.88 2 Vos = 10V, Ip = 7.754, To = 12s%C 2ne768 | = oe" | 2 | Vgg = 10V, Ip = 9.0A, Tr = 128C %, Forward Transconductance a ALL 8.0* 11.0 24 S(U) | Vps = 15V, Ip = 9.0A Cigs Input Capacitance ack 1000* | 2000 | 3000 pF Vg 0. Vpg = 26V, f= 1.0 MHz Coss Output Capacitance ALL 200 400 600 pF See Fig. 10 Coss Reverse Transfer Capacitance ALL 50 100 200 pF fa ton) Turn-On Delay Time ALL ~ - 35 ns Vop = 180, Ip = 9.0A, Zy 74.72 t, Rise Time ALL = - 65 ns (See Figs. 13 and 14) ta (otf) Turn-Off Delay Time ALL - - 150 ns {MOSFET switching times are essentially & Fall Time ALL - - 75* ns independent of operating temperature.) Thermal Resistance Rinuc _- Junction-to-Case ALL = - 0.83 | C/W Rincs _Case-to-Sink ALL - 0.1 - c/w | Mounting surface flat, smooth, and greased. Rinsa _- Junction-to-Ambient ALL - ~ 30 C/W | Free Air Operation Body-Drain Diode Ratings and Characteristics Ig Continuous Source Current 2N6767 _ - 12 A Modified MOSFET symbo! D (Body Diode) 26768 = = 14 showing the integral reverse P-N rectifier. "ong Pulsed Source Current 2IN6767 ~ - 20 A G (Body Diode) 2ne768 | = 25 8 Vsp Diode Forward Voltage (7) 26767 | 08 - 16 V__ | Te = 25C, ig = 12A, Vgg = 0 2Ne768 | oase | 17 V_ | Te = 25C, tg = 140, Vag = 0 ter Reverse Recovery Time ALL - 1000 - ns | Ty = 150C, te = tgng, dig/dt = 100 A/us Gar Reverse Recovered Charge ALL - 25 - uC | Ty = 150C, le = Igng, diie/dt = 100 A/us *JEDEC registered values. VARY tp TO OBTAIN we REQUIRED PEAK 1, but Vos , == 17 858Voss . SE Ve = 0.758Vpss Vag = 10V Foty ="Vve c 0.050. L. IL A = Fig. 1 - Clamped inductive test circuit. ) Pulse Test: Pulse Width < 300 usec, Duty Cycle < 2% Vv. fp ie) Lo LA Ym IN o a Fig. 2 - Clamped inductive waveforms. 3-497Standard Power MOSFETs 2N6767, 2N6768 89 us PULSE 00 us PULSE 255 Vos = 16V Tys* Tye ip, ORAIN CURRENT (AMPERES) Ty = -50C Ip. DRAIN CURRENT (AMPERES) a 50 100 150 200 250 300 Vos, ORAIN-TO-SOUACE VOLTAGE (VOLTS) 0 1 2 3 4 5 6 ? 8 Ves. GATE-TO-SQUACE VOLTAGE (VOLTS) Fig. 3 - Typical output characteristics for both types. Fig. 4 - Typical transfer characteristics for both types. = 2 = 6 z 5 e g s S 3 z' Z s = 3 2 0 1 2 3 4 5 a 1 2 3 4 5 Vos, DAAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, ORAIN.TO-SOURCE VOLTAGE (VOLTS) Fig. 5 - Typical saturation characteristics for the 2N6767. Fig. 6. - Typical saturation characteristics for the 2N6768. 10 ps Ty = 150 C MAX SINGLE PULSE Hs, TRANSCONDUCTANCE (SIEMENS) Ip. ORAIN CURRENT (AMPERES) Vos = 18 90 us PULSE 03 0 4 8 12 16 20 Ip. ORAIN CURRENT (AMPERI:S) 80 10 20 50 100 500 Vpg, DRAIN-TO- SOURCE VOLTAGE (VOLTS) Fig. 7 - Typical transconductance versus drain current for Fig. 8 - Maximum safe operating area for both types. both types.22 > > oe Ss on Rosion) DRAIN-FO-SOURCE ON RESISTANCE (NORMALIZED) a2 -40 o 40 80 120 160 Ty, JUNCTION TEMPERATURE C) Fig. 9 - Typical normalized on-resistance versus temp- erature for both types. Pp, POWER DISSIPATION (WATTS) 9 20 40 60 60 100 120 140 Te, CASE TEMPERATURE (9C') Fig. 11 - Power versus temperature derating curve for both types. Yop = 1904 HOR PAF tkHz Vi Vo TO SCOPE Fig. 13 - Switching time test circuit. C, CAPACITANCE ipF) Ig, SOURCE CURRENT (AMPERES) Standard Power MOSFETs 2N6767, 2N6768 Vas =o t* 1 MHz 3200 2400 1600 800 0 10 20 30 40 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) voltage for both types. ign, 2N6768 Ig, 2N67G8 o 4 a Qa 1 2 Vsp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) for both types. t ip }+ PULSE WIDTH V6S (on) Same om INPUT, Vj 50%, v DS {off} 10% OUTPUT, Vp 90% 10%, V6s (off) =| Fig. 10 - Typical capacitance versus drainsto-source Fig. 12 - Typical body-drain diode forward voltage iNPUT PULSE INPUT PULSE RISE TIME FALL TIME 4d (on) tg (off) ae ae boty 10% Vos (on) [+ ton _.| L toft Fig. 14 - Switching time waveforms 3-499High-Reliability Power MOSFETs JAN, JANTX, and JANTXV Solid-State Power Devices The major military specification used for the procurement of standard solid-state devices by the military is MiL-S- 19500, which covers the devices such as discrete transistors, thyristors, and diodes. MIL-S-19500 is the specification for the familiar JAN type solid state devices. Detailed electrical specifications are prepared as needed by the three military services and coordinated by the Defense Electronic Supply Center (DESC). Levels of reliability are defined by MIL-S-19500. JAN types receive Group A, Group B, and Group C lot sampling only, and are the least expensive. JANTX types receive 100 QPL Approved Types JAN, JANTX, and JANTXV percent process conditioning, and power conditioning, and are subjected to lot rejection based on delta parameter criteria in addition to Group A, Group B, and Group C lot sampling. JANTXV types are subjected to 100 percent (JTXV) internal visual inspection in addition to ail of the JANTX tests in accordance with MIL-STD-750 test methods and MIL-S-19500. DESC publishes QPL-19500", a Qualified Products List of all types and suppliers approved to produce and brand devices in accordance with MIL-S-19500. The following tables list approved QPL types and types that are process of testing preliminary to QPL approval by DESC, respectively. Gustom high-reliability selections of Harris Power MOSFETs can also be supplied with similar process and power conditioning tests and delta criteria. Harris is presently qualified on the following devices. Prices and delivery quotations may be obtained from your local sales representative. JAN and JANTX Power MOSFETs N-Channel MIL-S- . Py lo BVoss tos (on) Types 19500/ Package Channel (w) (A) ) 0 2N6756 542 TO-204AA N 76 14 100 0.18 2N8758 542 TQ-204AA N 75 9 200 0.4 2N6760 $42 TO-204AA N 75 5.5 400 1 2N6762 542 TO-204AA N 75 45 500 15 2N6764 543 TO-204AE N 150 38 100 0,055 2N6766 543 TO-204AE N 450 30 200 0.085 2N6768 $43 TO-204AA N 450 14 400 03 2N6770 543 TO-204AA N 150 12 500 04 2N6782 556 TO-205AF N 15 3.5 100 0.6 2N6784 556 TO-205AF N 15 2.25 200 15 2N6788 555 TO-205AF N 20 6 100 0.3 2N6790 55 TO-205AF N 20 3.6 200 0.8 2N6792 555 TO-205AF N 20 2 400 18 2N6794 55 TO-205AF N 20 15 500 3 2N6796 57 TO-205AF N 25 8 100 0.18 2N6798 557 TO-205AF N 25 55 100 0.4 2N6800 557 TO-205AF N 25 3 400 4 2N6802 557 TO-205AF N 25 25 500 45 P-Channel MIL-S- P, Ib BVoss tos (on) Types 49500/ Package Channel w) A) v) a 2N6895 565 TO-205AF Pp 8.33 -15 -100 3.65 2N6896 565 TO-2044A P 60 -6 ~100 0.6 2N6897 565 TO-204AA P 100 -12 -100 0.3 2N6898 565 TO-204AA Pp 150 -25 -100 0.2 2N6849 564 TO-205AF P 25 -6.5 -100 0.3 2N6851 564 TO-205AF P 26 _ 74.0 -200 08 N-Channel Logic- MIL-S- . Py lo BVoss tos (on) Level Types 19500/ Package Channel ~ (A) ) a 2N6901 566 TO-205AF N 8.33 15 100 1.4 2N6902 566 TO-2044A N 7 12 100 02 2N6903 566 TO-205AF N 8.33 15 200 3.65 2N6904 566 TO-204AA N 75 8 200 0.65