2010.04 Renesas General-Purpose Memory Catalog www.renesas.com Advanced technology exclusive to Renesas shows its true value when new demands arise. In fields where constant development takes place, there is relentless pressure to track the always-changing demands of the times and differentiate products by providing added value. Renesas memory delivers superior reliability achieved through exclusive technology. An extensive lineup of memory products is available to meet the diverse functional requirements of our customers. RENESAS Memory Low power Static Random Access Memory 03 Fast Static Random Access Memory 07 Electrically Erasable and Programmable Read Only Memory 09 Highly reliable SRAM / EEPROM 11 IC Function Tables 13 Environmental Considerations for Renesas Electronics Products 24 Low-Power Static Random Access memory A comprehensive lineup to meet a variety of needs Low-Power SRAM Basic product evolution with maintenance of upward-compatibility Pursuit of higher performance Ideal for portable terminal applications requiring a long data retention time on battery power. A comprehensive range of wide guaranteed temperature range products is available to suit a variety of application systems. Support for automotive (CIS) applications. The full product lineup has been developed with upward-compatibility in mind, allowing use in a wide range of applications from industrial equipment to portable terminals. 5V ongoingly supported 3V , 5V Lower standby current Larger density 256Kb 1Mb 2Mb 4Mb 8Mb 16Mb 32Mb 0.05A(256Kb) 0.1A(1Mb) 1.0A(4Mb) 1.2A(8Mb) 2.0A(16Mb) 4.0A(32Mb) 8.0A(64Mb) 64Mb Package compatibility and miniaturization Wider operating temperature ranges -40 to 85C Device-dependent specifications over 85C SOP, TSOP, sTSOP, TSOP, FBGA Realization of high reliability Environmentally friendly Renesas original technology maintains the high quality of a large density product. Lead-free Mass production currently underway. ECC embedded technology Mounted on 0.13mm 16Mb SRAM Advanced Low Power SRAM New memory cell composed by a fusion of SRAM and DRAM capacitor Low-power SRAM roadmap by process line 2008 Density 256Kb Low 0.6m x8 1Mb 0.25m x8 2Mb 0.25m x8, x16 4Mb 2011 2012 8Mb 0.18m x8, x16 0.15m Adv. 16Mb 0.13m 32Mb 64Mb x8, x16 x8, x16 2013 2014 Status In stable mass production 0.15m Adv. 16Mb 03 2010 0.18m x8, x16 Middle Large 2009 5V products : In stable mass production 3.3V products : In transition to Advanced. In stable mass production. 5V products : In stable mass production 3.3V products : In transition to Advanced. In stable mass production. In stable mass production 0.15m Adv. In stable mass production 0.15m Adv. (16Mb + 16Mb) In stable mass production 32Mb Single chip in stable mass production 0.15m Adv. (32Mb + 32Mb) MCP In stable mass production x8, x16(16Mb+16Mb) MCP Renesas Low Power SRAM Low-Power SRAM Lineup Classified by density 256Kb, 1Mb, 2Mb Series Low typ. standby current Long production and market record Stable production to be continued in the future 256Kb 1Mb 2Mb M5M5256D Series 5V/3.3V SOP, TSOP(sTSOP size) 55ns/70ns M5M51008D, M5M5V108D Series 5V/3.3V SOP, TSOP, sTSOP 55ns/70ns M5M5V208A, M5M5V216A Series 3.3V TSOP, sTSOP 55ns/70ns 4Mb, 8Mb Series 4Mb Continued 5V support 4Mb Advanced Low Power SRAM R1LP0408C 5V SOP, TSOP 55ns/70ns Variety of packages Stable production to be continued in the future 16Mb, 32Mb, 64Mb Series R1LV0408D, R1LV0416D, R1LV0414D Series 3.3V SOP, TSOP, sTSOP, FBGA 55ns/70ns 16Mb R1LV1616H Series 3.3V TSOP, FBGA 45ns/55ns On-chip ECC On-chip ECC R1LV1616H Series New memory cell Advanced Low Power SRAM Mass production MCP(Multi-Chip Package) 8Mb 8Mb Advanced Low Power SRAM HM628100, HM6216514 5V TSOP 55ns R1LV0808A, R1LV0816A Series 3.3V TSOP, TSOP, FBGA 55ns/70ns 16Mb Advanced Low Power SRAM 32Mb Advanced Low Power SRAM 64Mb Advanced Low Power SRAM R1LV1616R Series 3.3V TSOP, FBGA, TSOP 55ns*/70ns R1WV3216R Series 3.3V TSOP, FBGA 70ns 16Mb+16Mb Stacked MCP R1WV6416R Series 3.3V TSOP, FBGA, TSOP 55ns/70ns 32Mb+32Mb Stacked MCP * Please contact a Renesas Technology sales representative for details. R1LV3216R Series 3.3V TSOP, TSOP 55ns/70ns Low-Power SRAM Package Lineup Rich lineup from SOP to FBGA Memory Configuration TSOP (II) is also the JEDEC standard package. SOP TSOP(II) TSOP(I) & sTSOP(I) TSOP(II) FBGA 256Kb 8 256Kb 0.55 28pins 11.93 1.27 13.4 17.5 8 0.5 1Mb 0.5 1Mb/4Mb 14.1 32pins 1Mb/2Mb/4Mb 20 1.27 4Mb 11.76 1.27 8 x8 13.4 20.95 20.75 44pins 2Mb/4Mb/ 8Mb 11.76 0.8 (48ball) 8Mb/16Mb/ 32Mb/64Mb 4Mb/ 8Mb/ 16Mb/ 32Mb/ 64Mb* 12.00 48pins 0.5 20.00 7.5 to 8.0 0.4 52pins 8Mb/ 16Mb/ 32Mb/ 64Mb 10.49 x8/ x16 8.5 to 9.5 18.41 10.79 *64Mb FBGA package dimensions: 8.5mm x 11mm 04 Low-Power Static Random Access memory Features of 16Mb Low-Power SRAM R1LV1616H Series Manufactured using 0.13mm CMOS process. Uses 6-transistor memory cells. ECC* for reduced soft errors. *ECC : Error checking and correction Features/Advantages for User Product Specifications Wide operating voltage range 2.7V to 3.6V Fast access Low current consumption in standby mode 45ns max. 0.5mA typ./8mA max. Product Status In mass production 16Mb Configuration 1Mx16/2Mx8*1 Part No. R1LV1616H Power supply voltage 2.7V to 3.6V Operating current 20mA max. Access time 45/55ns SI version 8A max. Data retention current [ICCDR] SI version 8A max. Operating temperature range -40 to 85 Package TSOP(I)-48pin*1 Standby current [ISB1] Rapid increase in soft errors caused by neutron radiation in 0.13mm SRAM Difficult to maintain data storage integrity Innate susceptibility to bit faults due to soft errors FBGA(CSP)-48ball *1 : TSOP version only. Switchable to x 8 mode using BYTE# pin. Hardening against soft errors by incorporating ECC ECC circuit corrects bit faults so data is read correctly. Parity Data ECC circuit Data Quick Facts About Static RAM It goes without saying that semiconductor memory must be fault free. In fact, to reverse. The sources of such alpha radiation are materials such as aluminum, however, memory can sometimes malfunction, though this happens very rarely. copper, and resin that are used in the memory devices. It is therefore possible If the malfunction is caused by a defect in the hardware it is sufficient to either to minimize alpha radiation by carefully scrutinizing the materials used in the discard the faulty device or to not use the defective portion. This is what is fabrication of memory devices. done with flash memory, for example. With DRAM and SRAM, however, there are some very rare cases in which the contents of the memory become The second main cause of soft errors is neutron radiation from outer space. reversed, even though the hardware is functioning properly. Unlike most faults Through previously not a problem for terrestrial applications, advances in or defects, there is no trace left in the physical memory after the error has recent years in the fabrication of ultrafine high-grade SRAM have made it clear occurred. Such errors are called soft errors. As ever finer processing has come to that neutron radiation can in fact have an effect on earthbound electronic be employed in the production of DRAM and similar memory devices, their devices. When neutron radiation from outer space penetrates a memory chip, inherent susceptibility to soft errors has grown. some of the neutrons collide with the nuclei of the silicon atoms. It is thought that this causes charged particles to be released and sets the nuclei of the silicon 05 Broadly speaking, there are two main causes of soft errors. The first is alpha atoms in motion, generating large electrical charges. This is believed to be the radiation. Alpha rays consist of a stream of helium nuclei, which emit mechanism that causes the errors. Neutron radiation presents a more difficult radioactive impurities. When they penetrate silicon, an electrical charge is problem than alpha radiation because, unlike the latter, it originates outside the generated. The charge builds up at the memory nodes and cause the data values chip, indeed outside the earth. In addition, neutron radiation easily penetrates Renesas Low Power SRAM Features of Advanced Low-Power SRAM A new memory cell design combining SRAM cells and DRAM capacitors. Cell area is greatly reduced and soft errors are virtually eliminated. Features/Advantages for User Advantages of advanced low-power SRAM Smaller chips (about half the cell size of full CMOS) in smaller packages Capacitor cells for dramatically improved resistance to soft errors Reduced Cell size Stack Load Tr. Smaller Drive Transistors Integrated Core Technologies TFT Transistors DRAM Capacitors High Reliability Latch-up free Soft Error free 64 Mb products employ 32 Mb + 32 Mb stacked MCP * technology for the large density in the industry. * MCP : Multi Chip Package Main Applications Wide range of applications including industrial, consumer, office, and communications equipment Product Specifications Density (configuration) 4Mb (512Kx8/256Kx16) 8Mb (1Mx8/512Kx16) 16Mb (2Mx8/1Mx16) 32Mb (4Mx8/2Mx16) 64Mb (8Mbx8/4Mbx16) Product No. R1LV0408D/ R1LV0416D/R1LV0414D R1LV0808A/ R1LV0816A R1LV1616R R1WV3216R/ R1LV3216R R1WV6416R Operating power supply voltage 2.7V to 3.6V 2.4V to 3.6V 2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V Operating current 25mA(max.) 35mA(max.) 20mA(typ.) 40mA(max.) 25mA(typ.) 55mA(max.) 40mA(typ.) 60mA(max.) 45mA(typ.) Standby current 1A typ. @3.0V, 25C 1.2A typ. @3.0V, 25C 2A typ. @3.0V, 25C 4A max. @3.0V, 25C 8A max. @3.0V, 25C R : 0C to 70C I : -40C to 85C I : -40C to 85C R : 0C to 70C I : -40C to 85C R : 0C to 70C I : -40C to 85C R : 0C to 70C I : -40C to 85C Chip / Wafer Chip / Wafer Chip / Wafer 48pin TSOP(I) 44pin TSOP(II) 52pin TSOP(II) 48ball FBGA 48pin TSOP(I) 48pin TSOP(I) 48pin TSOP(I) 52pin TSOP(II) 48ball FBGA/Wafer Level CSP 52pin TSOP(II) 48ball FBGA 52pin TSOP(II) 48ball FBGA ( duty =100%) Operating temperature range Package Chip / Wafer 32pin SOP 32pin sTSOP(I)/TSOP(II) 44pin TSOP(II) 48ball FBGA/Wafer Level CSP shielding layers. Therefore, the first defense against soft errors caused by Neutron Radiation Evaluation System Diagram neutron radiation is to make the memory cells themselves less susceptible to having their values reversed. It is also necessary to make sure that errors that do occur will not affect neighboring cells. This is what Renesas Technology does in its advanced low-power SRAM products. Nevertheless, it is important to recognize that soft errors do in fact occur and to put in place measures to correct them. One approach is to incorporate error checking and correction (ECC) circuitry into the memory chip. The ECC circuitry corrects soft errors automatically so that it seems from the outside that the memory operates flawlessly. The illustration below shows a neutron radiation evaluation system used by Renesas Technology. The amount of neutron radiation varies at different locations on the earth, so we collect data Sample (test board) Proton radiation Neutron radiation Li plate target on neutron radiation levels in different regions worldwide. Through a combination of both basic and applied research we are finding ways to further improve the performance of our SRAM products. Source: NIKKEI ELECTRONICS, 2004 3-5 06 Fast Static Random Access Memory Fast static random access memory meets the need for higher system speed and performance Fast SRAM Product Evolution Memory for Communications Applications 2009 2010 4Q 1Q 2Q 2011 3Q 4Q 1Q 2Q 3Q 4Q 36M/72M QDRTM-II/DDR-II 600Mbps 144M QDRTM-II/DDR-II 144M QDRTM-II+/DDR-II+ 18M Network SRAM 167MHz Even faster (1.067Gbps) 72M QDRTM-II+/DDR-II+ added to product lineup. 72M QDRTM-II/DDR-II 72M QDRTM-II+/DDR-II+ 36M QDRTM-II/DDR-II Memory for General Industrial Applications 18M Network SRAM 4M fast SRAM 10ns/12ns 4M high-speed SRAM *QDR: Quad Data Rate *QDR and Quad Data Rate include a new family of products developed by Cypress, IDT, NEC, Samsung, and Renesas. Communications field LW : Late Write General industrial field QDRTM-II/DDR-II SRAM Features and Lineup Output occurs at a double data rate (DDR) in synchronization with the rising edge of the complementary clock signal, making this type of memory suitable for communication applications requiring large data transfer bandwidth such as routers and switches. A lineup of DDR SRAM with common I/O pin configurations is available to match a variety of applications. World top-level transfer rate Ethernet Port 300MHz, 600Mbps SERDES NSE/TCAM Small packages DRAM QDRTM-II Type 2Word Burst Function TM statistics TM Control DDR-II 2Word Burst(SIO/CIO) 4Word Burst VDD 1.7V to 1.9V VDDQ 1.4V to VDD HSTL Interface x9 / x18 / x36 Bit configuration 1.5 Latency Operating frequency(MHz) 167 / 200 / 250 167 / 200 / 250 / 300 Transfer rate(Mbps) 333 / 400 / 500 333 / 400 / 500 / 600 Package TM Buffer (QDRTM-II/II+ or DDR-II/II+) 36M / 72M Density (bits) JTAG Switch Fabric Flash Packet Buffer (QDRTM-II/II+ or DDR-II/II+) We are ready to respond flexibly to customer requests. 07 Bridge Routing Buffer Lead-containing/lead-free product support Cycle time(ns) Traffic Manager CPU 60% the use of a 100-pin TQFP: 165-pin BGA Power supply voltage NPU(FPGA) XAUI 6.0 / 5.0 / 4.0 6.0 / 5.0 / 4.0 / 3.3 Limited function of IEEE 1149.1 165ball MAP-BGA(15x17mm) 4Word Burst(CIO) Fast Static Random Access Memory QDRTM-II+/DDR-II+ SRAM Features and Lineup QDRTM-II+ and DDR-II+ SRAM products have been added to the lineup in response to market demand for still more speed. World top-level transfer rate 72M Density (bits) Type 533MHz, 1.067Gbps QDRTM-II+ Function Power supply voltage Built-in input termination resistor Enhanced signal integrity during high-speed operation Available settings: 105 < Rtt < 150 or 52 < Rtt < 105 DDR-II+ 4Word Burst 2Word Burst (CIO/SIO) VDD 1.7V to 1.9V VDDQ 1.4V to 1.6V HSTL Interface x9 / x18 / x36 Bit configuration 2.0 or 2.5 Latency Product lineup also contains versions for systems requiring no termination resistors. Extensive product lineup Operating frequency(MHz) 167 / 200 / 250 / 300 / 333 / 375 / 400 / 450 / 500 / 533 Transfer rate(Mbps) 333 / 400 / 500 / 600 / 666 / 750 / 800 / 900 / 1000 / 1066 6.0 / 5.0 / 4.0 / 3.6 / 3.3 / 3.0 / 2.7 / 2.5 / 2.2 / 2.0 / 1.9 Cycle time(ns) Limited function of IEEE 1149.1 JTAG An extensive lineup is available to match a wide range of system designs, including lead-free and non-lead-free versions, versions with wide temperature range tolerance, and versions with and without on-die termination (OTD). 4Word Burst (CIO) 165ball MAP-BGA (15mm x 17mm) Package On-die termination The device has incorporates an input termination resistor. The termination resistance value can be adjusted by the user by means of an RQ connected to the ZQ pin.(Selected by ODT pin) 105 < Rtt < 150 or 52 < Rtt < 105 Network SRAM High speed, high data rate, and large density for broadband applications Double late write/pipeline read operation enabling 100% data bus utilization makes these products ideal as buffer memory in network devices. 18M Density (bits) M5M5V5A36GP Bit Configuration Part No. 100-pin TQFP(16mm x 22mm) 100-pin TQFP(16mm x 22mm) Power Supply Voltage 3.3V 3.3V / 2.5V Operating Frequency 100MHz (8.5ns clock access time) 167MHz Late Write and Flow-Through Read Double Late Write and Pipeline Read Package Comprehensive 2.5V/3.3V lineup offering choice of power supply to suit various systems. M5M5V5636GP 512Kx36 Function Fast SRAM Lineup Suitable for a variety of applications, including communications, networks, and industrial equipment. Density (bits) 4Mb R1RP0404DGE-2PR R1RP0404DFE-2LR Part No. R1RP0408DGE-0PR R1RP0408DGE-2PR R1RP0408DGE-2LR R1RP0408DGE-2PI x4 Bit configuration Power supply voltage R1RW0404DGE-2PR R1RW0404DGE-2LR 5V10% Average operating current 5V10% 3V0.3V 100mA max. 160mA max. 130mA max. x16 130mA max. 10ns / 12ns 100mA max. 130mA max. 5mA Standby current Package 3.3V0.3V 5V10% 12ns Access time Data retention current R1RW0408DGE-0PR R1RW0408DGE-2PR R1RW0408DGE-2LR R1RW0408DGE-2PI x8 3V0.3V R1RW0416DGE-0PR R1RW0416DGE-2PR R1RW0416DGE-2LR R1RW0416DGE-2SR R1RW0416DGE-2PI R1RW0416DSB-0PR R1RW0416DSB-2PR R1RW0416DSB-2LR R1RW0416DSB-2SR R1RW0416DSB-2PI R1RW0416DSB-0PI R1RP0416DGE-0PR R1RP0416DGE-2PR R1RP0416DGE-2LR R1RP0416DGE-2SR R1RP0416DGE-2PI R1RP0416DSB-0PR R1RP0416DSB-2PR R1RP0416DSB-2LR R1RP0416DSB-2SR R1RP0416DSB-2PI R1RP0416DSB-0PI L version 1.0mA max. 0.8mA max. 1.0mA max. 0.8mA max. 1.0mA max. 0.8mA max. S version - - - - 0.5mA max. 0.5mA max. L version 0.5mA max. 0.4mA max. 0.5mA max. 0.4mA max. 0.5mA max. 0.4mA max. S version - - - - 200A max 200A max. 32pin 400mil SOJ 36pin 400mil SOJ 44pin 400mil SOJ/TSOP II 08 EEPROM MONOS memory cells provide reliability unsurpassed by our competitors. Highly Reliable Memory Cell Configuration MONOS*1 *1 : MONOS : Metal Oxide Nitride Oxide Silicon Memory Cells Providing Robust Data Reliability The memory cell works by storing a charge in a nitride layer sandwiched between two oxide layers. Since the charge is stored in a large trap enclosed by layers of insulation, charge leakage is minimal and the data is retained even if a defect should form in the tunnel oxide layer. Renesas is the only manufacturer*2 to employ a MONOS configuration for EEPROM and has been producing such memory products for more than 20 years. The robustness of this type of memory is attested to by our many customers. In recent years we have begun to use MONOS memory cells in our flash MCUs. Top Oxide Layer Polycrystalline Silicon Silicon Nitride Layer Tunnel Oxide Layer n n p x:Load Outline Structure of Memory Element *2 : According to research conducted by Renesas. Roadmap We deliver EEPROM with superior reliability and performance. Data retention time (years) R1EX24xxx R1EX25xxx 100 HN58X24xxx HN58X25xxx HN58W24xxx 10 HN58Cxxx HN58Vxxx 10k 100k 1000k Rewrite cycles Example Applications EEPROM is used in a wide variety of fields. Consumer Products 09 Office Equipment Communication Equipment General Industrial Equipment Air Conditioners Multifunction Devices Radio Transceivers Meters (Power/Water/Gas) TVs Printers Camera Modules Motors Digital Cameras Projectors Fixed Telephones CCTV Cameras EEPROM Memory Density Lineup A range of memory densities is available. Interface Package 2 Serial I C-bus TSSOP Serial SPI-bus TSSOP Parallel TSOP Memory Density (Bits) 2K 4K 8K 16K 32K 64K 128K 256K 512K 1M SOP SOP SOP DIP Package Options A variety of shipping configurations are available, including general-purpose packages, ultracompact packages, and wafers (with bumped wafer). 4.9 6.4 6.4 6.0 Unit [mm] 3.0 SOP-8 5.0 TSSOP-8 Wafer*/Bumped Wafers* TSSOP-14 Silicon-Fine pitch BGA* *Please contact a sales representative for details. Shipping Preprogrammed Memory Renesas can program EEPROM with data provided by the customer before shipment.* Programming EEPROM can be a troublesome process. In-House Programming Outsourcing Investment in equipment. Visible defects such as bent leads. Programing time Several workdays are required. EEPROM is delivered with data already programmed. Appearance and electrical characteristics guaranteed. Guaranteed by Renesas. Can be mounted immediately. * Please contact a Renesas sales representative regarding delivery conditions. 10 Highly reliable SRAM/EEPROM We continue to develop products with high added value for automotive applications. SRAM for automotive applications We draw on many years of experience supplying SRAM to industrial customers as we continue to extend our lineup of products for automotive applications. We can promise our customers stable supply over the long term, and our highly reliable and large-density products will always be at the cutting edge. Operating voltage Package compatibility and compactness Range of large-density products Fast SRAM: 5V/3V dual power supply support Low-power SRAM: 3V support only 4Mb Wide operating temperature range 8Mb 16Mb 32Mb TSOP Superior reliability - 40 to +105 Advanced LPSRAM Special arrangements required for support over 105C. New type of memory cell combining SRAM and DRAM capacitor Automotive-Grade SRAM Roadmap Ty p e 2008 2009 2010 2011 High-Speed SRAM Low-Power SRAM 2012 2013 2014 Remarks As of Apr./10 4Mb x16 0.18m PKG:44-TSOP CS:NOW MP:Q2/'10 4Mb x16 0.15m Advanced PKG:44-TSOP CS:NOW MP:Q2/'10 8Mb x8/x16 0.15m Advanced PKG:44-TSOP, 48-TSOP CS:NOW MP:Q2/'10 16Mb x8/x16 0.15m Advanced PKG:48-TSOP CS:Q3/'10 MP:Q4/'10 32Mb x8/x16 0.15m Advanced PKG:48-TSOP CS:Q3/'10 MP:Q4/'10 Note: Timing of sample shipments and start of mass production are subject to change without prior notice. Automotive-Grade SRAM Lineup Product Fast SRAM Low-power SRAM Density Power supply voltage Word size 4.5 to 5.5V x16 3.0 to 3.6V x16 4Mb 2.7 to 3.6V x16 8Mb 2.7 to 3.6V x8 / x16 16Mb 2.7 to 3.6V 32Mb 2.7 to 3.6V 4Mb Package 44-TSOP Product No.* Remarks R1RP0416DSD R1RW0416DSD 44-TSOP R1LV0416DSD 44-TSOP R1LV0816ASB 48-TSOP R1LV0816ASA x8 / x16 48-TSOP R1LV1616RSF x8 / x16 48-TSOP R1LV3216RSF Lead frame:Cu * Product numbers of automotive-grade versions are subject to change. 11 Highly reliable SRAM/EEPROM Serial EEPROM for automotive applications Our new lineup of serial EEPROM products for automotive applications provides support for the I 2 C bus and SPI bus specifications that are standard on Renesas MCUs. Products are available in capacities ranging from 2Kbit to 512Kbit. Product schedule for automotive applications Products for automotive applications Versions supporting temperatures up to 85C : Serial EEPROM Mass production starts in fiscal 2010 * I2 C bus series * SPI bus series Versions supporting temperatures over 85C : Under development Interface I2C-bus (2-wire type) SPI-bus (3-wire type) Microwire-bus (3-wire type) Pin assignments A0 Vcc A1 WP A2 SCL Vss SDA /S Vcc Q /HOLD /W C Vss D CS Vcc SK NC Di NC Do GND Frequency Density (bits) Features Trend Renesas Extensive product lineup 400kHz to 1MHz Up to 1M 3MHz to 5MHz Up to 512K 250kHz to 1MHz Up to 16K Support for many MCUs Extensive product lineup High-speed performance Long history Small density Low speed Serial EEPROM Products for automotive applications (under development) Interface I 2C bus SPI bus Memory density (bits) Memory configuration (words x bits) Write cycle time (sec.) Page size (bytes) 512K 64Kx8 5m 128 256K 32Kx8 64 128K 16Kx8 64 64K 8Kx8 32 32K 4Kx8 32 16K 2Kx8 16 8K 1Kx8 16 4K 512x8 16 2K 256x8 512K 64Kx8 256K 32Kx8 64 128K 16Kx8 64 64K 8Kx8 32 32K 4Kx8 32 16K 2Kx8 32 8K 1Kx8 32 4K 512x8 16 2K 256x8 16 Write protect area Operating frequency (Hz) Full size 400k 1.8 to 5.5 -40 to 85 Upper 1/4, Upper 1/2, Full size 5M / 3M* 1.8 to 5.5 -40 to 85 Power supply Operating voltage temperature (V) range (C) Package SOP8 TSSOP8 16 5m 128 *2.5V to 5.5V / 1.8V to 5.5V 12 IC Function Tables Low-Power SRAM Memory density (bit) 64M Configuration (word x bit) 4Mx16/ 8Mx8 4Mx16 32M 2Mx16/ 4Mx8 2Mx16 16M 1Mx16/ 2Mx8 1Mx16 8M 512Kx16 / 1Mx8 512Kx16 1Mx8 512Kx16 1Mx8 Part No. R1WV6416RSD-5SR R1WV6416RSD-7SR R1WV6416RSD-5SI R1WV6416RSD-7SI R1WV6416RSA-5SR R1WV6416RSA-7SR R1WV6416RSA-5SI R1WV6416RSA-7SI R1WV6416RBG-5SR R1WV6416RBG-7SR R1WV6416RBG-5SI R1WV6416RBG-7SI R1LV3216RSD-5SR R1LV3216RSD-7SR R1LV3216RSD-5SI R1LV3216RSD-7SI R1LV3216RSA-5SR R1LV3216RSA-7SR R1LV3216RSA-5SI R1LV3216RSA-7SI R1WV3216RBG-7SR R1WV3216RBG-7SI R1LV1616RSD-5SR R1LV1616RSD-7SR R1LV1616RSD-5SI R1LV1616RSD-7SI R1LV1616RSA-5SR R1LV1616RSA-7SR R1LV1616RSA-5SI R1LV1616RSA-7SI R1LV1616HSA-4SI R1LV1616HSA-5SI R1LV1616RBG-5SR R1LV1616RBG-7SR R1lV1616RBG-5SI R1LV1616RBG-7SI R1LV1616HBG-4SI R1LV1616RBG-5SI R1LV0816ASD-5SI R1LV0816ASD-7SI R1LV0816ASA-5SI R1LV0816ASA-7SI R1LV0816ASB-5SI R1LV0816ASB-7SI R1LV0816ABG-5SI R1LV0816ABG-7SI R1LV0808ASB-5SI R1LV0808ASB-7SI HM6216514LTTI-5SL HM628100LTTI-5SL Package TSOP(52) TSOP(52) TSOP(52) TSOP(52) TSOP(48) TSOP(48) TSOP(48) TSOP(48) FBGA(48) FBGA(48) FBGA(48) FBGA(48) TSOP(52) TSOP(52) TSOP(52) TSOP(52) TSOP(48) TSOP(48) TSOP(48) TSOP(48) FBGA(48) FBGA(48) TSOP(52) TSOP(52) TSOP(52) TSOP(52) TSOP(48) TSOP(48) TSOP(48) TSOP(48) TSOP(48) TSOP(48) FBGA(48) FBGA(48) FBGA(48) FBGA(48) FBGA(48) FBGA(48) TSOP(52) TSOP(52) TSOP(48) TSOP(48) TSOP(44) TSOP(44) FBGA(48) FBGA(48) TSOP(44) TSOP(44) TSOP(44) TSOP(44) Access Time (ns) 55 70 55 70 55 70 55 70 55 70 55 70 55 70 55 70 55 70 55 70 70 70 55* 70 55* 70 55* 70 55* 70 45 55 55* 70 55* 70 45 55 55 70 55 70 55 70 55 70 55 70 55 55 Functions/Features Advanced low-power SRAM, x8 switching by byte #, 32Mb + 32Mb stacked MCP Power Supply Operating Ambient Voltage (V) Temperature (C) 2.7 ~ 3.6 0 ~ 70 -40 ~ 85 0 ~ 70 -40 ~ 85 Advanced low-power SRAM, 32Mb + 32Mb stacked MCP 2.7 ~ 3.6 Advanced low-power SRAM, 32Mb single chip, x8 switching by byte # 2.7 ~ 3.6 0 ~ 70 -40 ~ 85 0 ~ 70 -40 ~ 85 0 ~ 70 -40 ~ 85 Advanced low-power SRAM, 16Mb + 16Mb stacked MCP 2.7 ~ 3.6 Advanced low-power SRAM, x8 switching by byte # 2.7 ~ 3.6 0 ~ 70 -40 ~ 85 0 ~ 70 -40 ~ 85 0 ~ 70 -40 ~ 85 Full CMOS low-power SRAM, x8 switching by byte # Advanced low-power SRAM 2.7 ~ 3.6 0 ~ 70 -40 ~ 85 Full CMOS low-power SRAM Advanced low-power SRAM, x8 switching by byte # 2.4 ~ 3.6 -40 ~ 85 4.5 ~ 5.5 -40 ~ 85 Advanced low-power SRAM Advanced low-power SRAM Full CMOS low-power SRAM *Please contact a Renesas Technology sales representative for details. 13 IC Function Tables Low-Power SRAM Memory density (bit) 4M Configuration (word x bit) 512Kx8 256Kx16 2M 256Kx8 128Kx16 1M 128Kx8 256k 32Kx8 Part No. Package Access Time (ns) R1LP0408CSP-5SC R1LP0408CSP-7LC R1LP0408CSB-5SC R1LP0408CSB-7LC R1LP0408CSC-5SC R1LP0408CSC-7LC R1LP0408CSP-5SI R1LP0408CSP-7LI R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408CSC-5SI R1LP0408CSC-7LI R1LV0408DSP-5SR R1LV0408DSP-7LR R1LV0408DSA-5SR R1LV0408DSA-7LR R1LV0408DSB-5SR R1LV0408DSB-7LR R1LV0408DSP-5SI R1LV0408DSP-7LI R1LV0408DSA-5SI R1LV0408DSA-7LI R1LV0408DSB-5SI R1LV0408DSB-7LI R1LV0416DSB-5SI R1LV0416DSB-7LI R1LV0416DBG-5SI R1LV0416DBG-7LI R1LV0414DSB-5SI R1LV0414DSB-7LI M5M5V208AKV-70HI M5M5V216ATP-55HI M5M5V216ATP-70HI M5M51008DFP-55H M5M51008DFP-70H M5M51008DVP-55H M5M51008DVP-70H M5M51008DRV-55H M5M51008DRV-70H M5M51008DKV-55H M5M51008DKV-70H M5M51008DFP-55HI M5M51008DFP-70HI M5M51008DVP-55HI M5M51008DVP-70HI M5M51008DRV-55HI M5M51008DRV-70HI M5M51008DKV-55HI M5M51008DKV-70HI M5M5V108DFP-70H M5M5V108DVP-70H M5M5V108DKV-70H M5M5V108DFP-70HI M5M5V108DVP-70HI M5M5V108DKV-70HI M5M5256DFP-55LL M5M5256DFP-55XL M5M5256DFP-70LL M5M5256DFP-70XL M5M5256DVP-55LL M5M5256DVP-55XL M5M5256DVP-70LL M5M5256DVP-70XL M5M5256DFP-70LLI M5M5256DVP-70LLI M5M5256DFP-70G M5M5256DFP-70XG M5M5256DVP-70G M5M5256DVP-70XG M5M5256DFP-70GI M5M5256DVP-70GI SOP(32) SOP(32) TSOP(32) TSOP(32) TSOP(32) TSOP(32) SOP(32) SOP(32) TSOP(32) TSOP(32) TSOP(32) TSOP(32) SOP(32) SOP(32) sTSOP(32) sTSOP(32) TSOP(32) TSOP(32) SOP(32) SOP(32) sTSOP(32) sTSOP(32) TSOP(32) TSOP(32) TSOP(44) TSOP(44) FBGA(48) FBGA(48) TSOP(44) TSOP(44) sTSOP(32) TSOP(44) TSOP(44) SOP(32) SOP(32) TSOP(32) TSOP(32) TSOP(32) TSOP(32) sTSOP(32) sTSOP(32) SOP(32) SOP(32) TSOP(32) TSOP(32) TSOP(32) TSOP(32) sTSOP(32) sTSOP(32) SOP(32) TSOP(32) sTSOP(32) SOP(32) TSOP(32) sTSOP(32) SOP(28) SOP(28) SOP(28) SOP(28) TSOP(28) TSOP(28) TSOP(28) TSOP(28) SOP(28) TSOP(28) SOP(28) SOP(28) TSOP(28) TSOP(28) SOP(28) TSOP(28) 55 70 55 70 55 70 55 70 55 70 55 70 55 70 55 70 55 70 55 70 55 70 55 70 55 70 55 70 55 70 70 55 70 55 70 55 70 55 70 55 70 55 70 55 70 55 70 55 70 70 70 70 70 70 70 55 55 70 70 55 55 70 70 70 70 70 70 70 70 70 70 Functions/Features SC: Low-standby current version (10A), CSC Series is reverse type employing TSOP(32) Power Supply Operating Ambient Voltage (V) Temperature (C) 4.5 to 5.5 -20 to 70 -40 to 85 Advanced low-power SRAM, S: Low-standby current version (10A) 2.7 to 3.6 0 to 70 -40 to 85 Advanced low-power SRAM, S: Low-standby current version (10A) 2.7 to 3.6 Advanced low-power SRAM, Single chip select pin type 2.7 to 3.6 DRV Series is reverse type employing TSOP(32) -40 to 85 2.7 to 3.6 2.7 to 3.6 -40 to 85 -40 to 85 4.5 to 5.5 0 to 70 -40 to 85 2.7 to 3.6 0 to 70 -40 to 85 XL version: Ultralow-standby current version (5A) 4.5 to 5.5 0 to 70 -40 to 85 XG version: Ultralow-standby current version (2.4A) (Vcc=3.0-3.6V) 3.0 to 3.6 & 4.5 to 5.5 0 to 70 -40 to 85 *Please contact a Renesas Technology sales representative for details. 14 IC Function Tables Fast SRAM Asynchronous SRAM Memory density (bit) 4M Configuration (word x bit) 1Mx 4 512Kx8 256Kx16 Part No. Package Power Supply Operating Ambient Voltage (V) Temperature (C) Access Time (ns) Functions/Features L: Low-standby current version (0.8mA) 3.0 to 3.6 0 to 70 L: Low-standby current version (0.8mA) 4.5 to 5.5 0 to 70 L: Low-standby current version (0.8mA) 3.0 to 3.6 0 to 70 L: Low-standby current version (0.8mA) 4.5 to 5.5 0 to 70 L: Low-standby current version (0.8mA) S: Ultralow-standby current version (0.5mA) 3.0 to 3.6 0 to 70 R1RW0404DGE-2PR SOJ(32) 12 R1RW0404DGE-2LR SOJ(32) 12 R1RP0404DGE-2PR SOJ(32) 12 R1RP0404DGE-2LR SOJ(32) 12 R1RW0408DGE-0PR SOJ(36) 12 R1RW0408DGE-2PR SOJ(36) 12 R1RW0408DGE-2LR SOJ(36) 12 R1RW0408DGE-2PI SOJ(36) 12 R1RP0408DGE-0PR SOJ(36) 12 R1RP0408DGE-2PR SOJ(36) 12 R1RP0408DGE-2LR SOJ(36) 12 R1RP0408DGE-2PI SOJ(36) 12 R1RW0416DGE-0PR SOJ(44) 10 R1RW0416DSB-0PI TSOP(44) 10 R1RW0416DGE-2PR SOJ(44) 12 R1RW0416DGE-2LR SOJ(44) 12 R1RW0416DGE-2SR SOJ(44) 12 R1RW0416DGE-2PI SOJ(44) 12 R1RW0416DSB-0PR TSOP(44) 10 -40 to 85 R1RW0416DSB-2PR TSOP(44) 12 0 to 70 R1RW0416DSB-2LR TSOP(44) 12 R1RW0416DSB-2SR TSOP(44) 12 R1RW0416DSB-2PI TSOP(44) 12 R1RP0416DGE-0PR SOJ(44) 10 R1RP0416DSB-0PI TSOP(44) 10 R1RP0416DGE-2PR SOJ(44) 12 R1RP0416DGE-2LR SOJ(44) 12 R1RP0416DGE-2SR SOJ(44) 12 R1RP0416DGE-2PI SOJ(44) 12 -40 to 85 R1RP0416DSB-0PR TSOP(44) 10 0 to 70 R1RP0416DSB-2PR TSOP(44) 12 R1RP0416DSB-2LR TSOP(44) 12 R1RP0416DSB-2SR TSOP(44) 12 R1RP0416DSB-2PI TSOP(44) 12 Part No. Package Operating Frequency (MHz) M5M5V5A36GP-85 TQFP(100) 100 Flow-Through Read Access time:8.55ns 3.3 0.165 3.3 0 to 70 M5M5V5636GP-16I TQFP(100) 167 Pipeline Read Double Late Write 3.3 0.165 3.3/2.5 -40 to 85 2.5 0.125 2.5 -40 to 85 -40 to 85 0 to 70 -40 to 85 L: Low-standby current version (0.8mA) S: Ultralow-standby current version (0.5mA) 4.5 to 5.5 0 to 70 -40 to 85 0 to 70 -40 to 85 Network SRAM Memory density (bit) 18M 15 Configuration (word x bit) 512Kx36 Functions /Features Power Supply Voltage VDD (V) I/O Power Supply Operating Ambient Voltage VDDQ (V) Temperature (C) IC Function Tables 36MQDRTM SRAM Series Memory density (bit) 36M Configuration (word x bit) 4Mx9 2Mx18 1Mx36 Part No. Package Operating Frequency (MHz) R1Q2A3609BBG-40R BGA(165) 250 R1Q2A3609BBG-50R BGA(165) 200 R1Q2A3609BBG-60R BGA(165) 167 R1Q3A3609BBG-33R BGA(165) 300 R1Q3A3609BBG-40R BGA(165) 250 R1Q3A3609BBG-50R BGA(165) 200 R1Q3A3609BBG-60R BGA(165) 167 R1Q4A3618BBG-33R BGA(165) 300 R1Q4A3618BBG-40R BGA(165) 250 R1Q5A3618BBG-33R BGA(165) 300 R1Q5A3618BBG-40R BGA(165) 250 R1Q2A3618BBG-40R BGA(165) 250 R1Q2A3618BBG-50R BGA(165) 200 R1Q2A3618BBG-60R BGA(165) 167 R1Q3A3618BBG-33R BGA(165) 300 R1Q3A3618BBG-40R BGA(165) 250 R1Q3A3618BBG-50R BGA(165) 200 R1Q3A3618BBG-60R BGA(165) 167 R1Q4A3636BBG-33R BGA(165) 300 R1Q4A3636BBG-40R BGA(165) 250 R1Q5A3636BBG-33R BGA(165) 300 R1Q5A3636BBG-40R BGA(165) 250 R1Q2A3636BBG-40R BGA(165) 250 R1Q2A3636BBG-50R BGA(165) 200 R1Q2A3636BBG-60R BGA(165) 167 R1Q3A3636BBG-33R BGA(165) 300 R1Q3A3636BBG-40R BGA(165) 250 R1Q3A3636BBG-50R BGA(165) 200 R1Q3A3636BBG-60R BGA(165) 167 Functions / Features QDRTM-II 2 Word Burst HSTL interface Power Supply I/O Power Supply Operating Ambient Voltage (V) Voltage (V) Temperature (C) 1.7 to 1.9 1.5/1.8 typ. 0 to 70 QDRTM-II 4 Word Burst HSTL interface DDR-II 2 Word Burst HSTL interface DDR-II 4 Word Burst HSTL interface QDRTM-II 2 Word Burst HSTL interface QDRTM-II 4 Word Burst HSTL interface DDR-II 2 Word Burst HSTL interface DDR-II 4 Word Burst HSTL interface QDRTM-II 2 Word Burst HSTL interface QDRTM-II 4 Word Burst HSTL interface Notes 1. When ordering the lead-free version, append "B0" to the end of the product number (example: R1Q2A3609BBG-50RB0). 2. When ordering the wide operating temperature range version, replace the "R" at the end of the product number with "I" (example: R1Q2A3609BBG-50I). 16 IC Function Tables 72MQDRTM SRAM Series Memory Density (bit) 72M Configuration (word x bit) 8Mx9 4Mx18 2Mx36 Part No. Package Operating Frequency (MHz) R1Q2A7209RBG-40RA0 BGA(165) 250 R1Q2A7209RBG-50RA0 BGA(165) 200 R1Q3A7209RBG-40RA0 BGA(165) 250 R1Q3A7209RBG-50RA0 BGA(165) 200 R1Q4A7209RBG-40RA0 BGA(165) 250 R1Q4A7209RBG-50RA0 BGA(165) 200 R1Q5A7209RBG-40RA0 BGA(165) 250 R1Q5A7209RBG-50RA0 BGA(165) 200 R1Q4A7218RBG-30RA0 BGA(165) 333 R1Q4A7218RBG-33RA0 BGA(165) 300 R1Q4A7218RBG-40RA0 BGA(165) 250 R1Q5A7218RBG-30RA0 BGA(165) 333 R1Q5A7218RBG-33RA0 BGA(165) 300 R1Q5A7218RBG-40RA0 BGA(165) 250 R1Q2A7218RBG-40RA0 BGA(165) 250 R1Q2A7218RBG-50RA0 BGA(165) 200 R1Q3A7218RBG-30RA0 BGA(165) 333 R1Q3A7218RBG-33RA0 BGA(165) 300 R1Q3A7218RBG-40RA0 BGA(165) 250 R1Q4A7236RBG-30RA0 BGA(165) 333 R1Q4A7236RBG-33RA0 BGA(165) 300 R1Q4A7236RBG-40RA0 BGA(165) 250 R1Q5A7236RBG-30RA0 BGA(165) 333 R1Q5A7236RBG-33RA0 BGA(165) 300 R1Q5A7236RBG-40RA0 BGA(165) 250 R1Q2A7236RBG-40RA0 BGA(165) 250 R1Q2A7236RBG-50RA0 BGA(165) 200 R1Q3A7236RBG-30RA0 BGA(165) 333 R1Q3A7236RBG-33RA0 BGA(165) 300 R1Q3A7236RBG-40RA0 BGA(165) 250 Functions / Features QDRTM-II 2 Word Burst HSTL interface Power Supply I/O Power Supply Operating Ambient Voltage (V) Voltage (V) Temperature (C) 1.7 to 1.9 QDRTM-II 4 Word Burst HSTL interface DDR-II 2 Word Burst HSTL interface DDR-II 4 Word Burst HSTL interface DDR-II 2 Word Burst HSTL interface DDR-II 4 Word Burst HSTL interface QDRTM-II 2 Word Burst HSTL interface QDRTM-II 4 Word Burst HSTL interface DDR-II 2 Word Burst HSTL interface DDR-II 4 Word Burst HSTL interface QDRTM-II 2 Word Burst HSTL interface QDRTM-II 4 Word Burst HSTL interface Notes 1. When ordering the lead-free version, replace the "A0" at the end of the product number with "B0" (example: R1Q2A7209RBG-40RB0). 2. When ordering the wide operating temperature range version, replace the "R" at the end of the product number with "I" (example: R1Q2A7209RBG-40I). 17 1.5/1.8 typ. 0 to 70 IC Function Tables 72MQDRTM -II+ SRAM Series (Latency 2.5, No ODT) Memory Density (bit) 72M Configuration (word x bit) 8Mx9 4Mx18 2Mx36 Part No. Package Operating Frequency (MHz) R1QAA7209RBG-22RA0 BGA(165) 450 R1QAA7209RBG-25RA0 BGA(165) 400 R1QBA7209RBG-22RA0 BGA(165) 450 R1QBA7209RBG-25RA0 BGA(165) 400 R1QCA7209RBG-22RA0 BGA(165) 450 R1QCA7209RBG-25RA0 BGA(165) 400 R1QAA7218RBG-19RA0 BGA(165) 533 R1QAA7218RBG-20RA0 BGA(165) 500 R1QAA7218RBG-22RA0 BGA(165) 450 R1QBA7218RBG-19RA0 BGA(165) 533 R1QBA7218RBG-20RA0 BGA(165) 500 R1QBA7218RBG-22RA0 BGA(165) 450 R1QCA7218RBG-19RA0 BGA(165) 533 R1QCA7218RBG-20RA0 BGA(165) 500 R1QCA7218RBG-22RA0 BGA(165) 450 R1QAA7236RBG-19RA0 BGA(165) 533 R1QAA7236RBG-20RA0 BGA(165) 500 R1QAA7236RBG-22RA0 BGA(165) 450 R1QBA7236RBG-19RA0 BGA(165) 533 R1QBA7236RBG-20RA0 BGA(165) 500 R1QBA7236RBG-22RA0 BGA(165) 450 R1QCA7236RBG-19RA0 BGA(165) 533 R1QCA7236RBG-20RA0 BGA(165) 500 R1QCA7236RBG-22RA0 BGA(165) 450 Functions / Features QDRTM-II+ 4 Word Burst HSTL interface Latency 2.5, No ODT Power Supply I/O Power Supply Operating Ambient Voltage (V) Voltage (V) Temperature (C) 1.7 to 1.9 1.5V typ. 0 to 70 DDR-II+ 2 Word Burst HSTL interface Latency 2.5, No ODT DDR-II+ 4 Word Burst HSTL interface Latency 2.5, No ODT QDRTM-II+ 4 Word Burst HSTL interface Latency 2.5, No ODT DDR-II+ 2 Word Burst HSTL interface Latency 2.5, No ODT DDR-II+ 4 Word Burst HSTL interface Latency 2.5, No ODT QDRTM-II+ 4 Word Burst HSTL interface Latency 2.5, No ODT DDR-II+ 2 Word Burst HSTL interface Latency 2.5, No ODT DDR-II+ 4 Word Burst HSTL interface Latency 2.5, No ODT Notes 1. When ordering the lead-free version, replace the "A0" at the end of the product number with "B0" (example: R1QAA7209RBG-22RB0). 2. When ordering the wide operating temperature range version, replace the "R" at the end of the product number with "I" (example: R1QAA7209RBG-22I). 3. ODT stands for "on-die termination." 18 IC Function Tables 72MQDRTM -II+ SRAM Series (Latency 2.5, With ODT) Memory Density (bit) 72M Configuration (word x bit) 8Mx9 4Mx18 2M x 36 Package Operating Frequency (MHz) R1QDA7209RBG-22RA0 BGA(165) 450 R1QDA7209RBG-25RA0 BGA(165) 400 R1QEA7209RBG-22RA0 BGA(165) 450 R1QEA7209RBG-25RA0 BGA(165) 400 R1QFA7209RBG-22RA0 BGA(165) 450 R1QFA7209RBG-25RA0 BGA(165) 400 R1QDA7218RBG-19RA0 BGA(165) 533 R1QDA7218RBG-20RA0 BGA(165) 500 R1QDA7218RBG-22RA0 BGA(165) 450 R1QEA7218RBG-19RA0 BGA(165) 533 R1QEA7218RBG-20RA0 BGA(165) 500 R1QEA7218RBG-22RA0 BGA(165) 450 R1QFA7218RBG-19RA0 BGA(165) 533 R1QFA7218RBG-20RA0 BGA(165) 500 R1QFA7218RBG-22RA0 BGA(165) 450 R1QDA7236RBG-19RA0 BGA(165) 533 R1QDA7236RBG-20RA0 BGA(165) 500 R1QDA7236RBG-22RA0 BGA(165) 450 R1QEA7236RBG-19RA0 BGA(165) 533 R1QEA7236RBG-20RA0 BGA(165) 500 R1QEA7236RBG-22RA0 BGA(165) 450 R1QFA7236RBG-19RA0 BGA(165) 533 R1QFA7236RBG-20RA0 BGA(165) 500 R1QFA7236RBG-22RA0 BGA(165) 450 Part No. Functions / Features QDRTM-II+ 4 Word Burst HSTL interface Latency 2.5, With ODT DDR-II+ 2 Word Burst HSTL interface Latency 2.5, With ODT DDR-II+ 4 Word Burst HSTL interface Latency 2.5, With ODT QDRTM-II+ 4 Word Burst HSTL interface Latency 2.5, With ODT DDR-II+ 2 Word Burst HSTL interface Latency 2.5, With ODT DDR-II+ 4 Word Burst HSTL interface Latency 2.5, With ODT QDRTM-II+ 4 Word Burst HSTL interface Latency 2.5, With ODT DDR-II+ 2 Word Burst HSTL interface Latency 2.5, With ODT DDR-II+ 4 Word Burst HSTL interface Latency 2.5, With ODT Notes 1. When ordering the lead-free version, replace the "A0" at the end of the product number with "B0" (example: R1QDA7209RBG-22RB0). 2. When ordering the wide operating temperature range version, replace the "R" at the end of the product number with "I" (example: R1QDA7209RBG-22I). 3. ODT stands for "on-die termination." 19 Power Supply I/O Power Supply Operating Ambient Voltage (V) Voltage (V) Temperature (C) 1.7 to 1.9 1.5V typ. 0 to 70 IC Function Tables 72MQDRTM -II+ SRAM Series (Latency 2.0, No ODT) Memory Density (bit) 72M Configuration (word x bit) 8Mx9 4Mx18 2M x 36 Package Operating Frequency (MHz) R1QGA7209RBG-27RA0 BGA(165) 375 R1QGA7209RBG-30RA0 BGA(165) 333 R1QHA7209RBG-27RA0 BGA(165) 375 R1QHA7209RBG-30RA0 BGA(165) 333 R1QJA7209RBG-27RA0 BGA(165) 375 R1QJA7209RBG-30RA0 BGA(165) 333 R1QGA7218RBG-22RA0 BGA(165) 450 R1QGA7218RBG-25RA0 BGA(165) 400 R1QHA7218RBG-22RA0 BGA(165) 450 R1QHA7218RBG-25RA0 BGA(165) 400 R1QJA7218RBG-22RA0 BGA(165) 450 R1QJA7218RBG-25RA0 BGA(165) 400 R1QGA7236RBG-22RA0 BGA(165) 450 R1QGA7236RBG-25RA0 BGA(165) 400 R1QHA7236RBG-22RA0 BGA(165) 450 R1QHA7236RBG-25RA0 BGA(165) 400 R1QJA7236RBG-22RA0 BGA(165) 450 R1QJA7236RBG-25RA0 BGA(165) 400 Part No. Functions / Features QDRTM-II+ 4 Word Burst HSTL interface Latency 2.0, No ODT Power Supply I/O Power Supply Operating Ambient Voltage (V) Voltage (V) Temperature (C) 1.7 to 1.9 1.5V typ. 0 to 70 DDR-II+ 2 Word Burst HSTL interface Latency 2.0, No ODT DDR-II+ 4 Word Burst HSTL interface Latency 2.0, No ODT QDRTM-II+ 4 Word Burst HSTL interface Latency 2.0, No ODT DDR-II+ 2 Word Burst HSTL interface Latency 2.0, No ODT DDR-II+ 4 Word Burst HSTL interface Latency 2.0, No ODT QDRTM-II+ 4 Word Burst HSTL interface Latency 2.0, No ODT DDR-II+ 2 Word Burst HSTL interface Latency 2.0, No ODT DDR-II+ 4 Word Burst HSTL interface Latency 2.0, No ODT Notes 1. When ordering the lead-free version, replace the "A0" at the end of the product number with "B0" (example: R1QAA7209RBG-22RB0). 2. When ordering the wide operating temperature range version, replace the "R" at the end of the product number with "I" (example: R1QAA7209RBG-22I) 3. ODT stands for "on-die termination." 72MQDRTM -II+ SRAM Series (Latency 2.0, With ODT) Memory Density (bit) 72M Configuration (word x bit) 8Mx9 4Mx18 2M x 36 Package Operating Frequency (MHz) R1QKA7209RBG-27RA0 BGA(165) 375 R1QKA7209RBG-30RA0 BGA(165) 333 R1QLA7209RBG-27RA0 BGA(165) 375 R1QLA7209RBG-30RA0 BGA(165) 333 R1QMA7209RBG-27RA0 BGA(165) 375 R1QMA7209RBG-30RA0 BGA(165) 333 R1QKA7218RBG-22RA0 BGA(165) 450 R1QKA7218RBG-25RA0 BGA(165) 400 R1QLA7218RBG-22RA0 BGA(165) 450 R1QLA7218RBG-25RA0 BGA(165) 400 R1QMA7218RBG-22RA0 BGA(165) 450 R1QMA7218RBG-25RA0 BGA(165) 400 R1QKA7236RBG-22RA0 BGA(165) 450 R1QKA7236RBG-25RA0 BGA(165) 400 R1QLA7236RBG-22RA0 BGA(165) 450 R1QLA7236RBG-25RA0 BGA(165) 400 R1QMA7236RBG-22RA0 BGA(165) 450 R1QMA7236RBG-25RA0 BGA(165) 400 Part No. Functions / Features QDRTM-II+ 4 Word Burst HSTL interface Latency 2.0, With ODT Power Supply I/O Power Supply Operating Ambient Voltage (V) Voltage (V) Temperature (C) 1.7 to 1.9 1.5V typ. 0 to 70 DDR-II+ 2 Word Burst HSTL interface Latency 2.0, With ODT DDR-II+ 4 Word Burst HSTL interface Latency 2.0, With ODT QDRTM-II+ 4 Word Burst HSTL interface Latency 2.0, With ODT DDR-II+ 2 Word Burst HSTL interface Latency 2.0, With ODT DDR-II+ 4 Word Burst HSTL interface Latency 2.0, With ODT QDRTM-II+ 4 Word Burst HSTL interface Latency 2.0, With ODT DDR-II+ 2 Word Burst HSTL interface Latency 2.0, With ODT DDR-II+ 4 Word Burst HSTL interface Latency 2.0, With ODT Notes 1. When ordering the lead-free version, replace the "A0" at the end of the product number with "B0" (example: R1QAA7209RBG-22RB0). 2. When ordering the wide operating temperature range version, replace the "R" at the end of the product number with "I" (example: R1QAA7209RBG-22I). 3. ODT stands for "on-die termination." 20 IC Function Tables Serial EEPROM Industrial Grade Interface I2C bus Memory Density (bit) Configuration (word x bit) 1M 512K 128Kx8 64Kx8 256K 32Kx8 128K 64K 32K 16K 8K SPI bus 8K x 8 4K x 8 2K x 8 1K x 8 4K 512 x 8 2K 256 x 8 512K 256K 64Kx8 32Kx8 128K 16Kx8 64K 8Kx8 32K 4Kx8 16K 2K x 8 8K 1Kx8 4K 512x8 2K 256x8 *1 Vcc=2.5 to 5.5V / 1.8 to 5.5V Under development 21 16Kx8 Part No. Package HN58W241000FPIAG R1EX24512ASAS0I R1EX24512BSAS0I R1EX24256ASAS0I R1EX24256BSAS0I R1EX24256ATBS0I R1EX24256BTAS0I R1EX24256ASA00I R1EX24256BSA00I R1EX24256ATB00I R1EX24256BTA00I R1EX24128ASAS0I R1EX24128BSAS0I R1EX24128ATAS0I R1EX24128BTAS0I R1EX24128ASA00I R1EX24128BSA00I R1EX24128ATA00I R1EX24128BTA00I R1EX24064ASAS0I R1EX24064ATAS0I R1EX24064ASA00I R1EX24064ATA00I R1EX24032ASAS0I R1EX24032ATAS0I R1EX24032ASA00I R1EX24032ATA00I R1EX24016ASAS0I R1EX24016ATAS0I R1EX24016ASA00I R1EX24016ATA00I R1EX24008ASAS0I R1EX24008ATAS0I R1EX24008ASA00I R1EX24008ATA00I R1EX24004ASAS0I R1EX24004ATAS0I R1EX24002ASAS0I R1EX24002ATAS0I R1EX25512ATA00I HN58X25256FPIAG R1EX25256ASA00I HN58X25256TIAG R1EX25256ATA00I HN58X25128FPIAG R1EX25128ASA00I HN58X25128TIAG R1EX25128ATA00I R1EX25064ASA00I R1EX25064ATA00I R1EX25032ASA00I R1EX25032ATA00I R1EX25016ASA00I R1EX25016ATA00I R1EX25008ASA00I R1EX25008ATA00I R1EX25004ASA00I R1EX25004ATA00I R1EX25002ASA00I R1EX25002ATA00I SOP(8)W SOP(8) SOP(8) SOP(8) SOP(8) TSSOP(14) TSSOP(8) SOP(8) SOP(8) TSSOP(14) TSSOP(8) SOP(8) SOP(8) TSSOP(8) TSSOP(8) SOP(8) SOP(8) TSSOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) TSSOP(8) SOP(8) SOP(8) TSSOP(14) TSSOP(8) SOP(8) SOP(8) TSSOP(14) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) Write Cycle Operating Write Protect Time (ms) Frequency (Hz) Area 5 1M 400k Page Size (Byte) Full size Full size 256 128 Full size 64 Power Supply Operating Ambient Voltage (V) Temperature (C) 2.5 to 3.6 1.8 to 5.5 -40 to 85 1.8 to 5.5 -40 to 85 Upper 1/8 Full size 64 Upper 1/8 Full size 32 Upper 1/4 Full size 32 Upper 1/4 Full size 16 Upper 1/2 Full size 16 Upper 1/2 5 5M/3M*1 Full size 16 Full size 16 Upper 1/4, Upper 1/2, Full size 128 64 64 32 32 32 32 16 16 IC Function Tables Serial EEPROM Consumer Grade Interface I2C bus Memory Density (bit) Configuration (word x bit) 1M 512K 128Kx8 64Kx8 256K 32Kx8 128K 64K 32K 16K 8K SPI bus 16Kx8 8K x 8 4K x 8 2K x 8 1K x 8 4K 512 x 8 2K 256 x 8 512K 256K 64Kx8 32Kx8 128K 16Kx8 64K 8Kx8 32K 4Kx8 16K 2K x 8 8K 1Kx8 4K 512x8 2K 256x8 Part No. HN58W241000FPI R1EX24512ASAS0A R1EX24512BSAS0A R1EX24256ASAS0A R1EX24256BSAS0A R1EX24256ATBS0A R1EX24256BTAS0A R1EX24256ASA00A R1EX24256BSA00A R1EX24256ATB00A R1EX24256BTA00A R1EX24128ASAS0A R1EX24128BSAS0A R1EX24128ATAS0A R1EX24128BTAS0A R1EX24128ASA00A R1EX24128BSA00A R1EX24128ATA00A R1EX24128BTA00A R1EX24064ASAS0A R1EX24064ATAS0A R1EX24064ASA00A R1EX24064ATA00A R1EX24032ASAS0A R1EX24032ATAS0A R1EX24032ASA00A R1EX24032ATA00A R1EX24016ASAS0A R1EX24016ATAS0A R1EX24016ASA00A R1EX24016ATA00A R1EX24008ASAS0A R1EX24008ATAS0A R1EX24008ASA00A R1EX24008ATA00A R1EX24004ASAS0A R1EX24004ATAS0A R1EX24002ASAS0A R1EX24002ATAS0A R1EX25512ATA00A HN58X25256FPI R1EX25256ASA00A HN58X25256TI R1EX25256ATA00A HN58X25128FPI R1EX25128ASA00A HN58X25128TI R1EX25128ATA00A R1EX25064ASA00A R1EX25064ATA00A R1EX25032ASA00A R1EX25032ATA00A R1EX25016ASA00A R1EX25016ATA00A R1EX25008ASA00A R1EX25008ATA00A R1EX25004ASA00A R1EX25004ATA00A R1EX25002ASA00A R1EX25002ATA00A Package SOP(8)W SOP(8) SOP(8) SOP(8) SOP(8) TSSOP(14) TSSOP(8) SOP(8) SOP(8) TSSOP(14) TSSOP(8) SOP(8) SOP(8) TSSOP(8) TSSOP(8) SOP(8) SOP(8) TSSOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) TSSOP(8) SOP(8) SOP(8) TSSOP(14) TSSOP(8) SOP(8) SOP(8) TSSOP(14) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) Write Cycle Operating Write Protect Time (ms) Frequency (Hz) Area 5 1M 400k Page Size (Byte) Full size Full size 256 128 Full size 64 Power Supply Operating Ambient Voltage (V) Temperature (C) 2.5 to 3.6 1.8 to 5.5 -40 to 85 1.8 to 5.5 -40 to 85 Upper 1/8 Full size 64 Upper 1/8 Full size 32 Upper 1/4 Full size 32 Upper 1/4 Full size 16 Upper 1/2 Full size 16 Upper 1/2 5 5M/3M*1 Full size 16 Full size 16 Upper 1/4, Upper 1/2, Full size 128 64 64 32 32 32 32 16 16 *1 Vcc=2.5 to 5.5V / 1.8 to 5.5V Under development 22 IC Function Tables Serial EEPROM Automotive (Accessory) Grade Interface I2C bus Memory Density (bit) 512K 256K 128K 64K 32K 16K 8K 4K 2K SPI bus 512K 256K 128K 64K 32K 16K 8K 4K 2K Part No. R1EX24512BSAS0P R1EX24256BSAS0P R1EX24256BTAS0P R1EX24128BSAS0P R1EX24128BTAS0P R1EX24064ASAS0P R1EX24064ATAS0P R1EX24032ASAS0P R1EX24032ATAS0P R1EX24016ASAS0P R1EX24016ATAS0P R1EX24008ASAS0P R1EX24008ATAS0P R1EX24004ASAS0P R1EX24004ATAS0P R1EX24002ASAS0P R1EX24002ATAS0P R1EX25512ATA00P R1EX25256ASA00P R1EX25256ATA00P R1EX25128ASA00P R1EX25128ATA00P R1EX25064ASA00P R1EX25064ATA00P R1EX25032ASA00P R1EX25032ATA00P R1EX25016ASA00P R1EX25016ATA00P R1EX25008ASA00P R1EX25008ATA00P R1EX25004ASA00P R1EX25004ATA00P R1EX25002ASA00P R1EX25002ATA00P Package SOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) SOP(8) TSSOP(8) Operating Write Cycle Time (ms) Frequency (Hz) 5 400k Write Protect Area Page Size (Byte) Full size 128 64 Power Supply Operating Ambient Voltage (V) Temperature (C) 1.8 to 5.5 -40 to 85 1.8 to 5.5 -40 to 85 64 32 32 16 16 16 16 5 5M/3M*1 Upper 1/4, Upper 1/2, Full size 128 64 64 32 32 32 32 16 16 *1 Vcc=2.5V to 5.5V / 1.8V to 5.5V : Under development Parallel EEPROM Memory Density (bit) Part No. Package Access Time Write Cycle Page Size Time (ms) (ns) (Byte) Functions/ Features Power Supply Operating Ambient Voltage (V) Temperature (C) 1M 128Kx8 HN58V1001T HN58C1001T HN58C1001FP TSOP(32) TSOP(32) SOP(32) 250 150 15 10 128 128 With reset function With reset function 2.7 to 5.5 4.5 to 5.5 256K 32Kx8 HN58V257AT TSOP(32) 120 10 64 With reset function 2.7 to 5.5 HN58C257AT TSOP(32) 85 / 100 10 64 With reset function 4.5 to 5.5 HN58V256AT TSOP(28) 120 10 64 2.7 to 5.5 HN58C256AT TSOP(28) 85 / 100 10 64 4.5 to 5.5 HN58V256AFP SOP(28) 120 10 64 2.7 to 5.5 HN58C256AFP SOP(28) 85 / 100 10 64 4.5 to 5.5 HN58C256AP HN58V66AT DIP(28) TSOP(28) 85 / 100 70 / 100 10 10 64 64 HN58V65AT TSOP(28) 70 / 100 10 64 HN58V66AFP SOP(28) 70 / 100 10 64 HN58V65AFP SOP(28) 70 / 100 10 64 HN58V66AP DIP(28) 70 / 100 10 64 HN58V65AP DIP(28) 70 / 100 10 64 64K 23 Configuration (word x bit) 8Kx8 With reset function 4.5 to 5.5 2.7 to 5.5 2.7 to 5.5 With reset function 2.7 to 5.5 2.7 to 5.5 With reset function 2.7 to 5.5 2.7 to 5.5 0 to 70 0 to 70 -20 to 85 -40 to 85 0 to 70 -20 to 85 0 to 70 -20 to 85 0 to 70 -40 to 85 0 to 70 -40 to 85 0 to 70 -40 to 85 0 to 70 -40 to 85 0 to 70 0 to 70 -40 to 85 0 to 70 -20 to 85 -40 to 85 0 to 70 -40 to 85 0 to 70 -40 to 85 0 to 70 -40 to 85 -40 to 85 All trademarks and registered trademarks are the property of their respective owners. QDR and Quad Data Rate are trademarks of the QDR Consortium. Environmental Considerations for Renesas Electronics Products Renesas Electronics is working actively to improve product environmental quality in all aspects of its business operations, including product design, materials procurement, manufacturing, and shipping. Development of environmentally compliant products through product environmental assessment Design Making products more resource and energy efficient (more compact, higher integration, reduced power consumption, extended service life) Reducing environmental load due to chemicals (management of chemical content of products) Compliance with domestic and international product environmental regulations EU RoHS Directive, China RoHS, ELV Directive, REACH Regulation Renesas Product Environmental Quality Management Sequence Global environmental preservation Development, design Customers Resource conservation / Health effects Requirement to eliminate restricted substances Requirement to report chemical substances content Procurement Regulations RoHS Directive WEEE Directive Renesas Electronics ELV Directive REACH Regulation China RoHS etc. Requirement to eliminate restricted substances Requirement to report chemical substances content Green procurement (materials procurement and product environmental management operations) Conformance assessment (quality assurance, development, and design operations) Manufacturing Suppliers Management of chemical substances Design of environmentally compliant products (development and design operations) Production management (manufacturing operations) Shipment of environmentally compliant products Thoroughgoing green procurement activities Procurement Investigation and confirmation of chemical content of procured parts and materials Prevention of inclusion or contamination by prohibited chemicals in products (process management) Manufacturing Shipping Reduction of CO2 emissions (reduction of PFC output and energy usage), reduction of environmental load from chemicals used in manufacturing, reduction of waste materials Reduction of volume of packing materials (expanding reuse of plastic packaging materials) Reduction of energy consumption in transport (improving overall efficiency of distribution) Compliance with customer requirements Transmission of information such as chemical content of products RoHS : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment WEEE : Waste Electrical and Electronic Equipment ELV : End of Life Vehicles REACH : Registration, Evaluation, Authorization and Restriction of Chemicals 24 Memo 25 Memo 26 Renesas General-Purpose Memory R10CS0001EJ0100