R10CS0001EJ0100 www.renesas.com
2010.04
Renesas
General-Purpose Memory
Catalog
Renesas General-Purpose Memory
In fields where constant development takes place, there is relentless pressure to track
the always-changing demands of the times and differentiate products by providing added value.
Renesas memory delivers superior reliability achieved through exclusive technology.
An extensive lineup of memory products is available to meet the diverse functional requirements of our customers.
Advanced technology exclusive to
Renesas shows its true value
when new demands arise.
RENESAS
Memory
Low power Static Random Access Memory
Fast Static Random Access Memory
Electrically Erasable and Programmable Read Only Memory
Highly reliable SRAM / EEPROM
IC Function Tables
Environmental Considerations for Renesas Electronics Products
03
07
09
11
13
24
Low-Power SRAM
Low-power SRAM roadmap
by process line
3V , 5V
256Kb 1Mb 2Mb 4Mb 8Mb 16Mb 32Mb 64Mb
SOP, TSOP, sTSOP, µTSOP, FBGA
5V ongoingly supported
Larger density
Package compatibility and miniaturization
Basic product evolution with
maintenance of upward-compatibility Pursuit of higher performance 256Kb, 1Mb, 2Mb Series
Density Status
2008 2009 20112010 2012 2013 2014
0.6µm x8
0.25µm x8
0.25µm x8, x16
0.13µm x8, x16
0.15µm Adv.
0.18µm
x8, x16
0.15µm Adv.
x8, x16(16Mb+16Mb) MCP
0.15µm Adv.
0.18µm
x8, x16 0.15µm Adv.
x8, x16 0.15µm Adv.
In stable mass production
5V products : In stable mass production
3.3V products : In transition to Advanced.
In stable mass production.
In stable mass production
In stable mass production
5V products : In stable mass production
3.3V products : In transition to Advanced.
In stable mass production.
(16Mb + 16Mb) In stable mass production
32Mb Single chip in stable mass production
(32Mb + 32Mb) MCP
In stable mass production
Low
Middle
Large
256Kb
1Mb
2Mb
4Mb
8Mb
16Mb
16Mb
32Mb
64Mb
M5M5256D Series
1.27
17.5
11.93
20.75
1.27
14.1
20
0.5
8
256Kb
0.55
13.4
8
256Kb
1Mb/4Mb 1Mb
20.00
0.5
12.00
8Mb/16Mb/
32Mb/64Mb
13.4
0.5
8
1Mb/2Mb/4Mb
20.95
1.27
11.76
4Mb
18.41
0.8
11.76
2Mb/4Mb/
8Mb
10.79
0.4
10.49
8Mb/
16Mb/
32Mb/
64Mb
28-
pins
32-
pins
44-
pins
48-
pins
(48ball)
52-
pins
x8
x8/
x16
Memory
Configuration
SOP FBGA
TSOP(I) & sTSOP(I) µTSOP(II)TSOP(II)
*64Mb FBGA package dimensions: 8.5mm × 11mm
7.5
to
8.0
4Mb/
8Mb/
16Mb/
32Mb/
64Mb*
8.5 to 9.5
M5M51008D, M5M5V108D Series M5M5V208A, M5M5V216A Series
Low-Power SRAM Lineup
Classified by density
Low-Power SRAM
Package Lineup
e full product lineup has been developed with upward-compatibility
in mind, allowing use in a wide range of applications from
industrial equipment to portable terminals.
Ideal for portable terminal applications requiring a long data retention
time on battery power.
A comprehensive range of wide guaranteed temperature range products
is available to suit a variety of application systems. Support for
automotive (CIS) applications.
Renesas Low Power SRAM
Lower standby current
0.05µA(256Kb) 0.1µA(1Mb) 1.0µA(4Mb) 1.2µA(8Mb)
2.0µA(16Mb) 4.0µA(32Mb) 8.0µA(64Mb)
256Kb 1Mb 2Mb
Low typ. standby current
Long production and market record
Stable production to be continued
in the future
4Mb, 8Mb Series
5V
SOP, TSOP
55ns/70ns
4Mb 8Mb
Continued 5V support
Variety of packages
Stable production to be continued
in the future
Mass production currently underway.
Lead-free
Environmentally friendly
16Mb, 32Mb, 64Mb Series
R1LV1616H Series
3.3V
µTSOP, FBGA, TSOP
55ns*/70ns
R1WV6416R Series
16Mb 16Mb Advanced
Low Power SRAM
3.3V
µTSOP, FBGA
70ns
16Mb+16Mb Stacked MCP
32Mb Advanced
Low Power SRAM
64Mb Advanced
Low Power SRAM
On-chip ECC R1LV1616H Series
New memory cell Advanced Low Power
SRAM Mass production
MCP(Multi-Chip Package)
Rich lineup from SOP to FBGA µTSOP (II) is also the JEDEC standard package.
Low-Power Static Random Access memory
A comprehensive lineup to meet a variety of needs
-40 to 85°C
Device-dependent specifications over 85°C
Wider operating temperature ranges
Mounted on 0.13mm 16Mb SRAM
ECC embedded technology
Advanced Low Power SRAM
Realization of high reliability
Renesas original technology maintains the high quality of a large
density product.
New memory cell composed by a fusion of
SRAM and DRAM capacitor
5V/3.3V
SOP, TSOP(sTSOP size)
55ns/70ns
5V/3.3V
SOP, TSOP, sTSOP
55ns/70ns
R1LP0408C
3.3V
TSOP, sTSOP
55ns/70ns
3.3V
SOP, TSOP, sTSOP, FBGA
55ns/70ns
R1LV0808A,
R1LV0816A Series
4Mb Advanced
Low Power SRAM
8Mb Advanced
Low Power SRAM
R1LV0408D, R1LV0416D,
R1LV0414D Series
3.3V
TSOP, µTSOP, FBGA
55ns/70ns
3.3V
TSOP, FBGA
45ns/55ns
On-chip ECC
R1LV1616R Series R1WV3216R Series
R1LV3216R Series
3.3V
µTSOP, TSOP
55ns/70ns
3.3V
µTSOP, FBGA, TSOP
55ns/70ns
32Mb+32Mb Stacked MCP
* Please contact a Renesas Technology
sales representative for details.
5V
TSOP
55ns
HM628100, HM6216514
0403
Low-Power SRAM
Low-power SRAM roadmap
by process line
3V , 5V
256Kb 1Mb 2Mb 4Mb 8Mb 16Mb 32Mb 64Mb
SOP, TSOP, sTSOP, µTSOP, FBGA
5V ongoingly supported
Larger density
Package compatibility and miniaturization
Basic product evolution with
maintenance of upward-compatibility Pursuit of higher performance 256Kb, 1Mb, 2Mb Series
Density Status
2008 2009 20112010 2012 2013 2014
0.6µm x8
0.25µm x8
0.25µm x8, x16
0.13µm x8, x16
0.15µm Adv.
0.18µm
x8, x16
0.15µm Adv.
x8, x16(16Mb+16Mb) MCP
0.15µm Adv.
0.18µm
x8, x16 0.15µm Adv.
x8, x16 0.15µm Adv.
In stable mass production
5V products : In stable mass production
3.3V products : In transition to Advanced.
In stable mass production.
In stable mass production
In stable mass production
5V products : In stable mass production
3.3V products : In transition to Advanced.
In stable mass production.
(16Mb + 16Mb) In stable mass production
32Mb Single chip in stable mass production
(32Mb + 32Mb) MCP
In stable mass production
Low
Middle
Large
256Kb
1Mb
2Mb
4Mb
8Mb
16Mb
16Mb
32Mb
64Mb
M5M5256D Series
1.27
17.5
11.93
20.75
1.27
14.1
20
0.5
8
256Kb
0.55
13.4
8
256Kb
1Mb/4Mb 1Mb
20.00
0.5
12.00
8Mb/16Mb/
32Mb/64Mb
13.4
0.5
8
1Mb/2Mb/4Mb
20.95
1.27
11.76
4Mb
18.41
0.8
11.76
2Mb/4Mb/
8Mb
10.79
0.4
10.49
8Mb/
16Mb/
32Mb/
64Mb
28-
pins
32-
pins
44-
pins
48-
pins
(48ball)
52-
pins
x8
x8/
x16
Memory
Configuration
SOP FBGA
TSOP(I) & sTSOP(I) µTSOP(II)TSOP(II)
*64Mb FBGA package dimensions: 8.5mm × 11mm
7.5
to
8.0
4Mb/
8Mb/
16Mb/
32Mb/
64Mb*
8.5 to 9.5
M5M51008D, M5M5V108D Series M5M5V208A, M5M5V216A Series
Low-Power SRAM Lineup
Classified by density
Low-Power SRAM
Package Lineup
e full product lineup has been developed with upward-compatibility
in mind, allowing use in a wide range of applications from
industrial equipment to portable terminals.
Ideal for portable terminal applications requiring a long data retention
time on battery power.
A comprehensive range of wide guaranteed temperature range products
is available to suit a variety of application systems. Support for
automotive (CIS) applications.
Renesas Low Power SRAM
Lower standby current
0.05µA(256Kb) 0.1µA(1Mb) 1.0µA(4Mb) 1.2µA(8Mb)
2.0µA(16Mb) 4.0µA(32Mb) 8.0µA(64Mb)
256Kb 1Mb 2Mb
Low typ. standby current
Long production and market record
Stable production to be continued
in the future
4Mb, 8Mb Series
5V
SOP, TSOP
55ns/70ns
4Mb 8Mb
Continued 5V support
Variety of packages
Stable production to be continued
in the future
Mass production currently underway.
Lead-free
Environmentally friendly
16Mb, 32Mb, 64Mb Series
R1LV1616H Series
3.3V
µTSOP, FBGA, TSOP
55ns*/70ns
R1WV6416R Series
16Mb 16Mb Advanced
Low Power SRAM
3.3V
µTSOP, FBGA
70ns
16Mb+16Mb Stacked MCP
32Mb Advanced
Low Power SRAM
64Mb Advanced
Low Power SRAM
On-chip ECC R1LV1616H Series
New memory cell Advanced Low Power
SRAM Mass production
MCP(Multi-Chip Package)
Rich lineup from SOP to FBGA µTSOP (II) is also the JEDEC standard package.
Low-Power Static Random Access memory
A comprehensive lineup to meet a variety of needs
-40 to 85°C
Device-dependent specifications over 85°C
Wider operating temperature ranges
Mounted on 0.13mm 16Mb SRAM
ECC embedded technology
Advanced Low Power SRAM
Realization of high reliability
Renesas original technology maintains the high quality of a large
density product.
New memory cell composed by a fusion of
SRAM and DRAM capacitor
5V/3.3V
SOP, TSOP(sTSOP size)
55ns/70ns
5V/3.3V
SOP, TSOP, sTSOP
55ns/70ns
R1LP0408C
3.3V
TSOP, sTSOP
55ns/70ns
3.3V
SOP, TSOP, sTSOP, FBGA
55ns/70ns
R1LV0808A,
R1LV0816A Series
4Mb Advanced
Low Power SRAM
8Mb Advanced
Low Power SRAM
R1LV0408D, R1LV0416D,
R1LV0414D Series
3.3V
TSOP, µTSOP, FBGA
55ns/70ns
3.3V
TSOP, FBGA
45ns/55ns
On-chip ECC
R1LV1616R Series R1WV3216R Series
R1LV3216R Series
3.3V
µTSOP, TSOP
55ns/70ns
3.3V
µTSOP, FBGA, TSOP
55ns/70ns
32Mb+32Mb Stacked MCP
* Please contact a Renesas Technology
sales representative for details.
5V
TSOP
55ns
HM628100, HM6216514
0403
Low-Power Static Random Access memory
Features of 16Mb
Low-Power SRAM
2.7V to 3.6V
45ns max.
0.5mA typ./8mA max.
Wide operating voltage range
Fast access
Features/Advantages for User Product Specifications
In mass production
Product Status
Features of Advanced
Low-Power SRAM
Quick Facts About
Static RAM
Renesas Low Power SRAM
Manufactured using 0.13mm CMOS process. Uses 6-transistor memory cells. ECC* for reduced soft errors.
Source: NIKKEI ELECTRONICS, 2004 3-5
R1LV1616H Series
*ECC : Error checking and correction
It goes without saying that semiconductor memory must be fault free. In fact,
however, memory can sometimes malfunction, though this happens very rarely.
If the malfunction is caused by a defect in the hardware it is sufficient to either
discard the faulty device or to not use the defective portion. is is what is
done with flash memory, for example. With DRAM and SRAM, however,
there are some very rare cases in which the contents of the memory become
reversed, even though the hardware is functioning properly. Unlike most faults
or defects, there is no trace left in the physical memory after the error has
occurred. Such errors are called soft errors. As ever finer processing has come to
be employed in the production of DRAM and similar memory devices, their
inherent susceptibility to soft errors has grown.
Broadly speaking, there are two main causes of soft errors. e first is alpha
radiation. Alpha rays consist of a stream of helium nuclei, which emit
radioactive impurities. When they penetrate silicon, an electrical charge is
generated. e charge builds up at the memory nodes and cause the data values
to reverse. e sources of such alpha radiation are materials such as aluminum,
copper, and resin that are used in the memory devices. It is therefore possible
to minimize alpha radiation by carefully scrutinizing the materials used in the
fabrication of memory devices.
e second main cause of soft errors is neutron radiation from outer space.
rough previously not a problem for terrestrial applications, advances in
recent years in the fabrication of ultrafine high-grade SRAM have made it clear
that neutron radiation can in fact have an effect on earthbound electronic
devices. When neutron radiation from outer space penetrates a memory chip,
some of the neutrons collide with the nuclei of the silicon atoms. It is thought
that this causes charged particles to be released and sets the nuclei of the silicon
atoms in motion, generating large electrical charges. is is believed to be the
mechanism that causes the errors. Neutron radiation presents a more difficult
problem than alpha radiation because, unlike the latter, it originates outside the
chip, indeed outside the earth. In addition, neutron radiation easily penetrates
shielding layers. erefore, the first defense against soft errors caused by
neutron radiation is to make the memory cells themselves less susceptible to
having their values reversed. It is also necessary to make sure that errors that do
occur will not affect neighboring cells. is is what Renesas Technology does in
its advanced low-power SRAM products.
Nevertheless, it is important to recognize that soft errors do in fact occur and
to put in place measures to correct them. One approach is to incorporate error
checking and correction (ECC) circuitry into the memory chip. e ECC
circuitry corrects soft errors automatically so that it seems from the outside that
the memory operates flawlessly. e illustration below shows a neutron
radiation evaluation system used by Renesas Technology. e amount of
neutron radiation varies at different locations on the earth, so we collect data
on neutron radiation levels in different regions worldwide. rough a
combination of both basic and applied research we are finding ways to further
improve the performance of our SRAM products.
Low current consumption
in standby mode
Features/Advantages for User
Product Specifications
Advantages of advanced low-power SRAM
Smaller chips (about half the cell size of full CMOS) in smaller packages
Capacitor cells for dramatically improved resistance to soft errors
64 Mb products employ 32 Mb + 32 Mb stacked MCP* technology for
the large density in the industry.
8Mb (1Mx8/512Kx16) 16Mb (2Mx8/1Mx16)4Mb (512Kx8/256Kx16) 32Mb (4Mx8/2Mx16) 64Mb (8Mbx8/4Mbx16)
2.4V to 3.6V 2.7V to 3.6V2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V
R1LV0808A/
R1LV0816A R1LV1616R
R1LV0408D/
R1LV0416D/R1LV0414D
R1WV3216R/
R1LV3216R R1WV6416R
35mA(max.)
20mA(typ.)
40mA(max.)
25mA(typ.)
25mA(max.) 55mA(max.)
40mA(typ.)
60mA(max.)
45mA(typ.)
1.2µA typ.
@3.0V, 25°C
2µA typ.
@3.0V, 25°C
1µA typ.
@3.0V, 25°C
4µA max.
@3.0V, 25°C
8µA max.
@3.0V, 25°C
Chip / Wafer
48pin TSOP(I)
44pin TSOP(II)
52pin µTSOP(II)
48ball FBGA
Chip / Wafer
48pin TSOP(I)
52pin µTSOP(II)
48ball FBGA/Wafer Level CSP
Chip / Wafer
32pin SOP
32pin sTSOP(I)/TSOP(II)
44pin TSOP(II)
48ball FBGA/Wafer Level CSP
Chip / Wafer
48pin TSOP(I)
52pin µTSOP(II)
48ball FBGA
48pin TSOP(I)
52pin µTSOP(II)
48ball FBGA
I : -40°C to 85°C
R : 0°C to 70°C
I : -40°C to 85°C
R : 0°C to 70°C
I : -40°C to 85°C
R : 0°C to 70°C
I : -40°C to 85°C
R : 0°C to 70°C
I : -40°C to 85°C
*MCP : Multi Chip Package
A new memory cell design combining SRAM cells and DRAM capacitors.
Cell area is greatly reduced and soft errors are virtually eliminated.
Stack Load Tr.
TFT Transistors
Latch-up free
Smaller Drive Transistors
DRAM Capacitors
Soft Error free
Reduced Cell size
High Reliability
Main Applications
Wide range of applications including industrial, consumer, office,
and communications equipment
Product No.
Operating current
(duty=100%)
Standby current
Operating temperature range
Package
Operating power supply voltage
Density (configuration)
Integrated Core
Technologies
ECC circuit corrects bit faults so data is read correctly.
Hardening against soft errors by incorporating ECC
Data Parity
ECC circuit
Data
Rapid increase in soft errors caused by neutron
radiation in 0.13mm SRAM
Difficult to maintain data storage integrity
Innate susceptibility to bit faults due to soft errors
R1LV1616H
2.7V to 3.6V
20mA max.
45/55ns
8µA max.
8µA max.
-40 to 85
TSOP(I)-48pin*1
FBGA(CSP)-48ball
Part No.
Power supply voltage
Operating current
Access time
Standby current [ISB1]
SI version
Data retention current [ICCDR] SI version
Operating temperature range
Package
Configuration
16Mb
1M×16/2M×8*1
*1 : TSOP version only. Switchable to x 8 mode using BYTE# pin.
Neutron Radiation Evaluation System Diagram
Proton radiation
Sample (test board) Neutron radiation
Li plate target
0605
Low-Power Static Random Access memory
Features of 16Mb
Low-Power SRAM
2.7V to 3.6V
45ns max.
0.5mA typ./8mA max.
Wide operating voltage range
Fast access
Features/Advantages for User Product Specifications
In mass production
Product Status
Features of Advanced
Low-Power SRAM
Quick Facts About
Static RAM
Renesas Low Power SRAM
Manufactured using 0.13mm CMOS process. Uses 6-transistor memory cells. ECC* for reduced soft errors.
Source: NIKKEI ELECTRONICS, 2004 3-5
R1LV1616H Series
*ECC : Error checking and correction
It goes without saying that semiconductor memory must be fault free. In fact,
however, memory can sometimes malfunction, though this happens very rarely.
If the malfunction is caused by a defect in the hardware it is sufficient to either
discard the faulty device or to not use the defective portion. is is what is
done with flash memory, for example. With DRAM and SRAM, however,
there are some very rare cases in which the contents of the memory become
reversed, even though the hardware is functioning properly. Unlike most faults
or defects, there is no trace left in the physical memory after the error has
occurred. Such errors are called soft errors. As ever finer processing has come to
be employed in the production of DRAM and similar memory devices, their
inherent susceptibility to soft errors has grown.
Broadly speaking, there are two main causes of soft errors. e first is alpha
radiation. Alpha rays consist of a stream of helium nuclei, which emit
radioactive impurities. When they penetrate silicon, an electrical charge is
generated. e charge builds up at the memory nodes and cause the data values
to reverse. e sources of such alpha radiation are materials such as aluminum,
copper, and resin that are used in the memory devices. It is therefore possible
to minimize alpha radiation by carefully scrutinizing the materials used in the
fabrication of memory devices.
e second main cause of soft errors is neutron radiation from outer space.
rough previously not a problem for terrestrial applications, advances in
recent years in the fabrication of ultrafine high-grade SRAM have made it clear
that neutron radiation can in fact have an effect on earthbound electronic
devices. When neutron radiation from outer space penetrates a memory chip,
some of the neutrons collide with the nuclei of the silicon atoms. It is thought
that this causes charged particles to be released and sets the nuclei of the silicon
atoms in motion, generating large electrical charges. is is believed to be the
mechanism that causes the errors. Neutron radiation presents a more difficult
problem than alpha radiation because, unlike the latter, it originates outside the
chip, indeed outside the earth. In addition, neutron radiation easily penetrates
shielding layers. erefore, the first defense against soft errors caused by
neutron radiation is to make the memory cells themselves less susceptible to
having their values reversed. It is also necessary to make sure that errors that do
occur will not affect neighboring cells. is is what Renesas Technology does in
its advanced low-power SRAM products.
Nevertheless, it is important to recognize that soft errors do in fact occur and
to put in place measures to correct them. One approach is to incorporate error
checking and correction (ECC) circuitry into the memory chip. e ECC
circuitry corrects soft errors automatically so that it seems from the outside that
the memory operates flawlessly. e illustration below shows a neutron
radiation evaluation system used by Renesas Technology. e amount of
neutron radiation varies at different locations on the earth, so we collect data
on neutron radiation levels in different regions worldwide. rough a
combination of both basic and applied research we are finding ways to further
improve the performance of our SRAM products.
Low current consumption
in standby mode
Features/Advantages for User
Product Specifications
Advantages of advanced low-power SRAM
Smaller chips (about half the cell size of full CMOS) in smaller packages
Capacitor cells for dramatically improved resistance to soft errors
64 Mb products employ 32 Mb + 32 Mb stacked MCP* technology for
the large density in the industry.
8Mb (1Mx8/512Kx16) 16Mb (2Mx8/1Mx16)4Mb (512Kx8/256Kx16) 32Mb (4Mx8/2Mx16) 64Mb (8Mbx8/4Mbx16)
2.4V to 3.6V 2.7V to 3.6V2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V
R1LV0808A/
R1LV0816A R1LV1616R
R1LV0408D/
R1LV0416D/R1LV0414D
R1WV3216R/
R1LV3216R R1WV6416R
35mA(max.)
20mA(typ.)
40mA(max.)
25mA(typ.)
25mA(max.) 55mA(max.)
40mA(typ.)
60mA(max.)
45mA(typ.)
1.2µA typ.
@3.0V, 25°C
2µA typ.
@3.0V, 25°C
1µA typ.
@3.0V, 25°C
4µA max.
@3.0V, 25°C
8µA max.
@3.0V, 25°C
Chip / Wafer
48pin TSOP(I)
44pin TSOP(II)
52pin µTSOP(II)
48ball FBGA
Chip / Wafer
48pin TSOP(I)
52pin µTSOP(II)
48ball FBGA/Wafer Level CSP
Chip / Wafer
32pin SOP
32pin sTSOP(I)/TSOP(II)
44pin TSOP(II)
48ball FBGA/Wafer Level CSP
Chip / Wafer
48pin TSOP(I)
52pin µTSOP(II)
48ball FBGA
48pin TSOP(I)
52pin µTSOP(II)
48ball FBGA
I : -40°C to 85°C
R : 0°C to 70°C
I : -40°C to 85°C
R : 0°C to 70°C
I : -40°C to 85°C
R : 0°C to 70°C
I : -40°C to 85°C
R : 0°C to 70°C
I : -40°C to 85°C
*MCP : Multi Chip Package
A new memory cell design combining SRAM cells and DRAM capacitors.
Cell area is greatly reduced and soft errors are virtually eliminated.
Stack Load Tr.
TFT Transistors
Latch-up free
Smaller Drive Transistors
DRAM Capacitors
Soft Error free
Reduced Cell size
High Reliability
Main Applications
Wide range of applications including industrial, consumer, office,
and communications equipment
Product No.
Operating current
(duty=100%)
Standby current
Operating temperature range
Package
Operating power supply voltage
Density (configuration)
Integrated Core
Technologies
ECC circuit corrects bit faults so data is read correctly.
Hardening against soft errors by incorporating ECC
Data Parity
ECC circuit
Data
Rapid increase in soft errors caused by neutron
radiation in 0.13mm SRAM
Difficult to maintain data storage integrity
Innate susceptibility to bit faults due to soft errors
R1LV1616H
2.7V to 3.6V
20mA max.
45/55ns
8µA max.
8µA max.
-40 to 85
TSOP(I)-48pin*1
FBGA(CSP)-48ball
Part No.
Power supply voltage
Operating current
Access time
Standby current [ISB1]
SI version
Data retention current [ICCDR] SI version
Operating temperature range
Package
Configuration
16Mb
1M×16/2M×8*1
*1 : TSOP version only. Switchable to x 8 mode using BYTE# pin.
Neutron Radiation Evaluation System Diagram
Proton radiation
Sample (test board) Neutron radiation
Li plate target
0605
Fast SRAM
Product Evolution
QDR™-II/DDR-II
SRAM Features and Lineup
36M/72M QDR™-II/DDR-II 600Mbps
18M Network SRAM 167MHz
Even faster (1.067Gbps) 72M QDR™-II+/DDR-II+
added to product lineup.
Memory for Communications Applications
QDR™-II+/DDR-II+
SRAM Features and Lineup
Network SRAM
Fast SRAM Lineup
Fast Static Random Access Memory
World top-level transfer rate
4M fast SRAM 10ns/12ns
Memory for General Industrial Applications
533MHz, 1.067Gbps
Output occurs at a double data rate (DDR) in synchronization with the rising edge of the complementary clock signal,
making this type of memory suitable for communication applications requiring large data transfer bandwidth
such as routers and switches. A lineup of DDR SRAM with common I/O pin configurations is available to match
a variety of applications.
Suitable for a variety of applications, including communications, networks, and industrial equipment.
World top-level transfer rate
Extensive product lineup
Enhanced signal integrity during high-speed
operation Available settings:
105 < Rtt < 150 or 52 < Rtt < 105
Product lineup also contains versions for systems
requiring no termination resistors.
Built-in input termination resistor
QDR™-II+ and DDR-II+ SRAM products have been added to the lineup in response to market demand for still more speed.
300MHz, 600Mbps
Small packages
60% the use of a 100-pin TQFP: 165-pin BGA
Lead-containing/lead-free product support
We are ready to respond flexibly to customer requests.
Density (bits)
Type
Function
Interface
Bit configuration
Latency
Operating frequency(MHz)
Transfer rate(Mbps)
Cycle time(ns)
JTAG
Package
Bit configuration
Power supply voltage
Access time
Average operating current
Standby current
Package
Density (bits)
Type
Function
Interface
Bit configuration
Latency
Operating frequency(MHz)
Transfer rate(Mbps)
Cycle time(ns)
JTAG
Package
On-die termination
*QDR: Quad Data Rate
*QDR and Quad Data Rate include a new family of
products developed by Cypress, IDT, NEC, Samsung,
and Renesas.
4Q2Q3Q1Q4Q1Q2Q4Q3Q
2009 2010 2011
18M Network SRAM
36M QDR
™
-II/DDR-II
4M high-speed SRAM
LW : Late Write Communications field General industrial field
144M QDR™-II/DDR-II
144M QDR™-II+/DDR-II+
72M QDR™-II/DDR-II
72M QDR™-II+/DDR-II+
VDD
VDDQ
36M / 72M
QDR™-II
2Word Burst 4Word Burst
1.7V to 1.9V
1.4V to VDD
HSTL
x9 / x18 / x36
1.5
Limited function of IEEE 1149.1
165ball MAP-BGA(15×17mm)
167 / 200 / 250 / 300
333 / 400 / 500 / 600
6.0 / 5.0 / 4.0 / 3.3
167 / 200 / 250
333 / 400 / 500
6.0 / 5.0 / 4.0
2Word Burst(SIO/CIO) 4Word Burst(CIO)
DDR-II
XAUI
Bridge
CPU
Flash
DRAM
NSE/TCAM
TM statistics
TM Control
Routing Buffer
Packet Buffer
(QDR™-II/II+ or
DDR-II/II+)
TM Buffer
(QDR™-II/II+
or DDR-II/II+)
Switch
Fabric
Ethernet
Port NPU(FPGA) Traffic Manager
SERDES
R1RP0404DGE-2PR
R1RP0404DFE-2LR
R1RW0404DGE-2PR
R1RW0404DGE-2LR
R1RP0408DGE-0PR
R1RP0408DGE-2PR
R1RP0408DGE-2LR
R1RP0408DGE-2PI
R1RW0408DGE-0PR
R1RW0408DGE-2PR
R1RW0408DGE-2LR
R1RW0408DGE-2PI
R1RP0416DGE-0PR
R1RP0416DGE-2PR
R1RP0416DGE-2LR
R1RP0416DGE-2SR
R1RP0416DGE-2PI
R1RP0416DSB-0PR
R1RP0416DSB-2PR
R1RP0416DSB-2LR
R1RP0416DSB-2SR
R1RP0416DSB-2PI
R1RP0416DSB-0PI
R1RW0416DGE-0PR
R1RW0416DGE-2PR
R1RW0416DGE-2LR
R1RW0416DGE-2SR
R1RW0416DGE-2PI
R1RW0416DSB-0PR
R1RW0416DSB-2PR
R1RW0416DSB-2LR
R1RW0416DSB-2SR
R1RW0416DSB-2PI
R1RW0416DSB-0PI
L version
S version
L version
S version
4Mb
Density (bits)
Part No.
72M
QDR™-II+ DDR-II+
VDD
VDDQ
4Word Burst 2Word Burst (CIO/SIO) 4Word Burst (CIO)
1.7V to 1.9V
1.4V to 1.6V
HSTL
x9 / x18 / x36
2.0 or 2.5
167 / 200 / 250 / 300 / 333 / 375 / 400 / 450 / 500 / 533
333 / 400 / 500 / 600 / 666 / 750 / 800 / 900 / 1000 / 1066
6.0 / 5.0 / 4.0 / 3.6 / 3.3 / 3.0 / 2.7 / 2.5 / 2.2 / 2.0 / 1.9
Limited function of IEEE 1149.1
165ball MAP-BGA (15mm x 17mm)
e device has incorporates an input termination resistor. e termination
resistance value can be adjusted by the user by means of an RQ connected to the
ZQ pin.(Selected by ODT pin) 105 < Rtt < 150 or 52 < Rtt < 105
x4
5V±10%
130mA max.
1.0mA max.
-
0.5mA max.
-
3.3V±0.3V
100mA max.
0.8mA max.
-
0.4mA max.
-
5V±10%
160mA max.
1.0mA max.
0.5mA max.
0.5mA max.
200µA max
3V±0.3V
130mA max.
0.8mA max.
0.5mA max.
0.4mA max.
200µA max.
3V±0.3V
100mA max.
0.8mA max.
-
0.4mA max.
-
x8 x16
5V±10%
130mA max.
1.0mA max.
-
0.5mA max.
-
5mA
32pin 400mil SOJ 36pin 400mil SOJ 44pin 400mil SOJ/TSOP II
12ns 10ns / 12ns
Density (bits)
Bit Configuration
Part No.
Package
Power Supply Voltage
Operating Frequency
Function
High speed, high data rate, and large density for broadband applications
Double late write/pipeline read operation
enabling 100% data bus utilization makes these
products ideal as buffer memory in network
devices.
Comprehensive 2.5V/3.3V lineup offering
choice of power supply to suit various systems.
18M
100-pin TQFP(16mm × 22mm)
3.3V / 2.5V
167MHz
Double Late Write and Pipeline Read
100-pin TQFP(16mm × 22mm)
3.3V
100MHz (8.5ns clock access time)
Late Write and Flow-rough Read
M5M5V5A36GP M5M5V5636GP
512K×36
Fast Static Random Access Memory
Fast static random access memory meets the need for higher system speed and performance
Power
supply
voltage
An extensive lineup is available to match a wide
range of system designs, including lead-free and
non-lead-free versions, versions with wide
temperature range tolerance, and versions with
and without on-die termination (OTD).
Data
retention
current
Power
supply
voltage
0807
Fast SRAM
Product Evolution
QDR™-II/DDR-II
SRAM Features and Lineup
36M/72M QDR™-II/DDR-II 600Mbps
18M Network SRAM 167MHz
Even faster (1.067Gbps) 72M QDR™-II+/DDR-II+
added to product lineup.
Memory for Communications Applications
QDR™-II+/DDR-II+
SRAM Features and Lineup
Network SRAM
Fast SRAM Lineup
Fast Static Random Access Memory
World top-level transfer rate
4M fast SRAM 10ns/12ns
Memory for General Industrial Applications
533MHz, 1.067Gbps
Output occurs at a double data rate (DDR) in synchronization with the rising edge of the complementary clock signal,
making this type of memory suitable for communication applications requiring large data transfer bandwidth
such as routers and switches. A lineup of DDR SRAM with common I/O pin configurations is available to match
a variety of applications.
Suitable for a variety of applications, including communications, networks, and industrial equipment.
World top-level transfer rate
Extensive product lineup
Enhanced signal integrity during high-speed
operation Available settings:
105 < Rtt < 150 or 52 < Rtt < 105
Product lineup also contains versions for systems
requiring no termination resistors.
Built-in input termination resistor
QDR™-II+ and DDR-II+ SRAM products have been added to the lineup in response to market demand for still more speed.
300MHz, 600Mbps
Small packages
60% the use of a 100-pin TQFP: 165-pin BGA
Lead-containing/lead-free product support
We are ready to respond flexibly to customer requests.
Density (bits)
Type
Function
Interface
Bit configuration
Latency
Operating frequency(MHz)
Transfer rate(Mbps)
Cycle time(ns)
JTAG
Package
Bit configuration
Power supply voltage
Access time
Average operating current
Standby current
Package
Density (bits)
Type
Function
Interface
Bit configuration
Latency
Operating frequency(MHz)
Transfer rate(Mbps)
Cycle time(ns)
JTAG
Package
On-die termination
*QDR: Quad Data Rate
*QDR and Quad Data Rate include a new family of
products developed by Cypress, IDT, NEC, Samsung,
and Renesas.
4Q2Q3Q1Q4Q1Q2Q4Q3Q
2009 2010 2011
18M Network SRAM
36M QDR
™
-II/DDR-II
4M high-speed SRAM
LW : Late Write Communications field General industrial field
144M QDR™-II/DDR-II
144M QDR™-II+/DDR-II+
72M QDR™-II/DDR-II
72M QDR™-II+/DDR-II+
VDD
VDDQ
36M / 72M
QDR™-II
2Word Burst 4Word Burst
1.7V to 1.9V
1.4V to VDD
HSTL
x9 / x18 / x36
1.5
Limited function of IEEE 1149.1
165ball MAP-BGA(15×17mm)
167 / 200 / 250 / 300
333 / 400 / 500 / 600
6.0 / 5.0 / 4.0 / 3.3
167 / 200 / 250
333 / 400 / 500
6.0 / 5.0 / 4.0
2Word Burst(SIO/CIO) 4Word Burst(CIO)
DDR-II
XAUI
Bridge
CPU
Flash
DRAM
NSE/TCAM
TM statistics
TM Control
Routing Buffer
Packet Buffer
(QDR™-II/II+ or
DDR-II/II+)
TM Buffer
(QDR™-II/II+
or DDR-II/II+)
Switch
Fabric
Ethernet
Port NPU(FPGA) Traffic Manager
SERDES
R1RP0404DGE-2PR
R1RP0404DFE-2LR
R1RW0404DGE-2PR
R1RW0404DGE-2LR
R1RP0408DGE-0PR
R1RP0408DGE-2PR
R1RP0408DGE-2LR
R1RP0408DGE-2PI
R1RW0408DGE-0PR
R1RW0408DGE-2PR
R1RW0408DGE-2LR
R1RW0408DGE-2PI
R1RP0416DGE-0PR
R1RP0416DGE-2PR
R1RP0416DGE-2LR
R1RP0416DGE-2SR
R1RP0416DGE-2PI
R1RP0416DSB-0PR
R1RP0416DSB-2PR
R1RP0416DSB-2LR
R1RP0416DSB-2SR
R1RP0416DSB-2PI
R1RP0416DSB-0PI
R1RW0416DGE-0PR
R1RW0416DGE-2PR
R1RW0416DGE-2LR
R1RW0416DGE-2SR
R1RW0416DGE-2PI
R1RW0416DSB-0PR
R1RW0416DSB-2PR
R1RW0416DSB-2LR
R1RW0416DSB-2SR
R1RW0416DSB-2PI
R1RW0416DSB-0PI
L version
S version
L version
S version
4Mb
Density (bits)
Part No.
72M
QDR™-II+ DDR-II+
VDD
VDDQ
4Word Burst 2Word Burst (CIO/SIO) 4Word Burst (CIO)
1.7V to 1.9V
1.4V to 1.6V
HSTL
x9 / x18 / x36
2.0 or 2.5
167 / 200 / 250 / 300 / 333 / 375 / 400 / 450 / 500 / 533
333 / 400 / 500 / 600 / 666 / 750 / 800 / 900 / 1000 / 1066
6.0 / 5.0 / 4.0 / 3.6 / 3.3 / 3.0 / 2.7 / 2.5 / 2.2 / 2.0 / 1.9
Limited function of IEEE 1149.1
165ball MAP-BGA (15mm x 17mm)
e device has incorporates an input termination resistor. e termination
resistance value can be adjusted by the user by means of an RQ connected to the
ZQ pin.(Selected by ODT pin) 105 < Rtt < 150 or 52 < Rtt < 105
x4
5V±10%
130mA max.
1.0mA max.
-
0.5mA max.
-
3.3V±0.3V
100mA max.
0.8mA max.
-
0.4mA max.
-
5V±10%
160mA max.
1.0mA max.
0.5mA max.
0.5mA max.
200µA max
3V±0.3V
130mA max.
0.8mA max.
0.5mA max.
0.4mA max.
200µA max.
3V±0.3V
100mA max.
0.8mA max.
-
0.4mA max.
-
x8 x16
5V±10%
130mA max.
1.0mA max.
-
0.5mA max.
-
5mA
32pin 400mil SOJ 36pin 400mil SOJ 44pin 400mil SOJ/TSOP II
12ns 10ns / 12ns
Density (bits)
Bit Configuration
Part No.
Package
Power Supply Voltage
Operating Frequency
Function
High speed, high data rate, and large density for broadband applications
Double late write/pipeline read operation
enabling 100% data bus utilization makes these
products ideal as buffer memory in network
devices.
Comprehensive 2.5V/3.3V lineup offering
choice of power supply to suit various systems.
18M
100-pin TQFP(16mm × 22mm)
3.3V / 2.5V
167MHz
Double Late Write and Pipeline Read
100-pin TQFP(16mm × 22mm)
3.3V
100MHz (8.5ns clock access time)
Late Write and Flow-rough Read
M5M5V5A36GP M5M5V5636GP
512K×36
Fast Static Random Access Memory
Fast static random access memory meets the need for higher system speed and performance
Power
supply
voltage
An extensive lineup is available to match a wide
range of system designs, including lead-free and
non-lead-free versions, versions with wide
temperature range tolerance, and versions with
and without on-die termination (OTD).
Data
retention
current
Power
supply
voltage
0807
Highly Reliable Memory
Cell Configuration MONOS
*1
Roadmap
Memory Density Lineup
Shipping Preprogrammed
Memory
Package Options
EEPROM
We deliver EEPROM with superior reliability and performance.
Memory Cells Providing Robust Data Reliability
Example Applications
EEPROM is used in a wide variety of fields.
e memory cell works by storing a charge in a nitride layer sandwiched
between two oxide layers. Since the charge is stored in a large trap enclosed by
layers of insulation, charge leakage is minimal and the data is retained even if a
defect should form in the tunnel oxide layer.
Renesas is the only manufacturer*2 to employ a MONOS configuration for
EEPROM and has been producing such memory products for more than 20
years. e robustness of this type of memory is attested to by our many
customers. In recent years we have begun to use MONOS memory cells in our
flash MCUs.
*1 : MONOS : Metal Oxide Nitride Oxide Silicon
*2 : According to research conducted by Renesas.
R1EX24xxx
R1EX25xxx
HN58X24xxx
HN58X25xxx
HN58W24xxx
HN58Cxxx
HN58Vxxx
Outline Structure of Memory Element
n n
p
Polycrystalline Silicon
Top Oxide Layer
Tunnel Oxide Layer Silicon Nitride Layer
×:Load
Consumer Products Office Equipment Communication Equipment General Industrial Equipment
A variety of shipping configurations are available, including general-purpose packages,
ultracompact packages, and wafers (with bumped wafer).
Renesas can program EEPROM with data provided by the customer before shipment.*
A range of memory densities is available.
Serial I2C-bus
Serial SPI-bus
Parallel
Interface
Memory Density (Bits)
Package
TSSOP
SOP
TSSOP
SOP
TSOP
SOP
DIP
2K 4K 8K 16K 32K 64K 128K 256K 512K 1M
Programming EEPROM can be a troublesome process.
In-House Programming Outsourcing
* Please contact a Renesas sales representative regarding delivery conditions.
SOP-8
Meters (Power/Water/Gas)
Motors
CCTV Cameras
Radio Transceivers
Camera Modules
Fixed Telephones
Multifunction Devices
Printers
Projectors
Air Conditioners
TVs
Digital Cameras
TSSOP-8
Wafer*/Bumped Wafers* Silicon-Fine pitch BGA*
TSSOP-14
5.0
6.4
3.0
6.4
4.9
6.0
10k 100k
100
10
1000k Rewrite cycles
Data retention time
(years)
EEPROM
MONOS memory cells provide reliability unsurpassed by our competitors.
Several workdays are
required.
Visible defects such as
bent leads.
Investment in equipment.
Programing time
Guaranteed by Renesas.
Can be mounted immediately.
EEPROM is delivered with
data already programmed.
Appearance and electrical
characteristics guaranteed.
*Please contact a sales representative for details.
Unit [mm]
1009
Highly Reliable Memory
Cell Configuration MONOS
*1
Roadmap
Memory Density Lineup
Shipping Preprogrammed
Memory
Package Options
EEPROM
We deliver EEPROM with superior reliability and performance.
Memory Cells Providing Robust Data Reliability
Example Applications
EEPROM is used in a wide variety of fields.
e memory cell works by storing a charge in a nitride layer sandwiched
between two oxide layers. Since the charge is stored in a large trap enclosed by
layers of insulation, charge leakage is minimal and the data is retained even if a
defect should form in the tunnel oxide layer.
Renesas is the only manufacturer*2 to employ a MONOS configuration for
EEPROM and has been producing such memory products for more than 20
years. e robustness of this type of memory is attested to by our many
customers. In recent years we have begun to use MONOS memory cells in our
flash MCUs.
*1 : MONOS : Metal Oxide Nitride Oxide Silicon
*2 : According to research conducted by Renesas.
R1EX24xxx
R1EX25xxx
HN58X24xxx
HN58X25xxx
HN58W24xxx
HN58Cxxx
HN58Vxxx
Outline Structure of Memory Element
n n
p
Polycrystalline Silicon
Top Oxide Layer
Tunnel Oxide Layer Silicon Nitride Layer
×:Load
Consumer Products Office Equipment Communication Equipment General Industrial Equipment
A variety of shipping configurations are available, including general-purpose packages,
ultracompact packages, and wafers (with bumped wafer).
Renesas can program EEPROM with data provided by the customer before shipment.*
A range of memory densities is available.
Serial I2C-bus
Serial SPI-bus
Parallel
Interface
Memory Density (Bits)
Package
TSSOP
SOP
TSSOP
SOP
TSOP
SOP
DIP
2K 4K 8K 16K 32K 64K 128K 256K 512K 1M
Programming EEPROM can be a troublesome process.
In-House Programming Outsourcing
* Please contact a Renesas sales representative regarding delivery conditions.
SOP-8
Meters (Power/Water/Gas)
Motors
CCTV Cameras
Radio Transceivers
Camera Modules
Fixed Telephones
Multifunction Devices
Printers
Projectors
Air Conditioners
TVs
Digital Cameras
TSSOP-8
Wafer*/Bumped Wafers* Silicon-Fine pitch BGA*
TSSOP-14
5.0
6.4
3.0
6.4
4.9
6.0
10k 100k
100
10
1000k Rewrite cycles
Data retention time
(years)
EEPROM
MONOS memory cells provide reliability unsurpassed by our competitors.
Several workdays are
required.
Visible defects such as
bent leads.
Investment in equipment.
Programing time
Guaranteed by Renesas.
Can be mounted immediately.
EEPROM is delivered with
data already programmed.
Appearance and electrical
characteristics guaranteed.
*Please contact a sales representative for details.
Unit [mm]
1009
Operating voltage Range of large-density products Package compatibility and
compactness
SRAM for automotive
applications
Serial EEPROM
for automotive applications
Highly reliable SRAM/EEPROM
We draw on many years of experience supplying SRAM to industrial customers as we continue to extend
our lineup of products for automotive applications. We can promise our customers stable supply over
the long term, and our highly reliable and large-density products will always be at the cutting edge.
Our new lineup of serial EEPROM products for automotive applications provides support for the I2C bus
and SPI bus specifications that are standard on Renesas MCUs. Products are available in capacities
ranging from 2Kbit to 512Kbit.
Advanced LPSRAM
New type of memory cell combining
SRAM and DRAM capacitor
Fast SRAM:
Low-power SRAM:
Product schedule for automotive applications
Versions supporting temperatures up to 85°C :
Versions supporting temperatures over 85°C :
Products for automotive applications
Serial EEPROM
TSOP
Wide operating temperature range Superior reliability
-40 to +105
Special arrangements required for
support over 105°C.
4Mb 8Mb 16Mb 32Mb
Serial EEPROM Products for automotive applications (under development)
• I2C bus series
• SPI bus series
Interface Pin assignments RenesasTrend
Density
(bits)
Frequency Features
Automotive-Grade SRAM Roadmap
Type 2008 2009 20112010 2012 2013 2014 Remarks As of Apr./10
PKG:44-TSOP CS:NOW MP:Q2/’10
PKG:44-TSOP , 48-TSOP CS:NOW MP:Q2/’10
PKG:48-TSOP CS:Q3/’10 MP:Q4/’10
PKG:44-TSOP CS:NOW MP:Q2/’10
PKG:48-TSOP CS:Q3/’10 MP:Q4/’10
0.18µmx16
4Mb
0.15µm Advanced x16
4Mb
0.15µm Advanced x8/x16
8Mb
0.15µm Advanced x8/x16
16Mb
0.15µm Advanced x8/x16
32Mb
High-Speed
SRAM
Low-Power
SRAM
Note: Timing of sample shipments and start of mass production are subject to change without prior notice.
A0
A1
A2
Vss
Vcc
WP
SCL
SDA
/S
Q
/W
Vss
Vcc
/HOLD
C
D
CS
SK
Di
Do
Vcc
NC
NC
GND
I2C bus
SPI bus
Interface
64Kx8
32Kx8
16Kx8
8Kx8
4Kx8
2Kx8
1Kx8
512x8
256x8
64Kx8
32Kx8
16Kx8
8Kx8
4Kx8
2Kx8
1Kx8
512x8
256x8
Memory
configuration
(words x bits)
Package
Write protect
area
Full size
Upper 1/4,
Upper 1/2,
Full size
Page size
(bytes)
128
64
64
32
32
16
16
16
16
128
64
64
32
32
32
32
16
16
Write
cycle time
(sec.)
5m
5m
Memory density
(bits)
512K
256K
128K
64K
32K
16K
8K
4K
2K
512K
256K
128K
64K
32K
16K
8K
4K
2K
*2.5V to 5.5V / 1.8V to 5.5V
SOP8 TSSOP8
Operating
frequency
(Hz)
400k
5M/ 3M*
Power supply
voltage
(V)
1.8 to 5.5
1.8 to 5.5
Operating
temperature
range (°C)
-40 to 85
-40 to 85
I2C-bus
(2-wire type)
SPI-bus
(3-wire type)
Microwire-bus
(3-wire type)
400kHz to 1MHz
3MHz to 5MHz
250kHz to 1MHz
Up to 1M
Up to 512K
Up to 16K
Highly reliable SRAM/EEPROM
We continue to develop products with high added value for automotive applications.
5V/3V dual power supply support
3V support only
Extensive product lineup
Support for many MCUs
Extensive product lineup
High-speed performance
Long history
Small density
Low speed
Mass production starts in fiscal 2010
Under development
1211
Automotive-Grade SRAM Lineup
* Product numbers of automotive-grade versions are subject to change.
Fast SRAM
Low-power SRAM
R1RP0416DSD
R1RW0416DSD
R1LV0416DSD
R1LV0816ASB
R1LV0816ASA
R1LV1616RSF
R1LV3216RSF
x16
x16
x16
x8 / x16
x8 / x16
x8 / x16
4Mb
4Mb
8Mb
16Mb
32Mb
4.5 to 5.5V
3.0 to 3.6V
2.7 to 3.6V
2.7 to 3.6V
2.7 to 3.6V
2.7 to 3.6V
Lead frame:Cu
Product Density Power supply voltage Word size Product No.*Remarks
Package
44-TSOP
44-TSOP
44-TSOP
48-TSOP
48-TSOP
48-TSOP
Operating voltage Range of large-density products Package compatibility and
compactness
SRAM for automotive
applications
Serial EEPROM
for automotive applications
Highly reliable SRAM/EEPROM
We draw on many years of experience supplying SRAM to industrial customers as we continue to extend
our lineup of products for automotive applications. We can promise our customers stable supply over
the long term, and our highly reliable and large-density products will always be at the cutting edge.
Our new lineup of serial EEPROM products for automotive applications provides support for the I2C bus
and SPI bus specifications that are standard on Renesas MCUs. Products are available in capacities
ranging from 2Kbit to 512Kbit.
Advanced LPSRAM
New type of memory cell combining
SRAM and DRAM capacitor
Fast SRAM:
Low-power SRAM:
Product schedule for automotive applications
Versions supporting temperatures up to 85°C :
Versions supporting temperatures over 85°C :
Products for automotive applications
Serial EEPROM
TSOP
Wide operating temperature range Superior reliability
-40 to +105
Special arrangements required for
support over 105°C.
4Mb 8Mb 16Mb 32Mb
Serial EEPROM Products for automotive applications (under development)
• I2C bus series
• SPI bus series
Interface Pin assignments RenesasTrend
Density
(bits)
Frequency Features
Automotive-Grade SRAM Roadmap
Type 2008 2009 20112010 2012 2013 2014 Remarks As of Apr./10
PKG:44-TSOP CS:NOW MP:Q2/’10
PKG:44-TSOP , 48-TSOP CS:NOW MP:Q2/’10
PKG:48-TSOP CS:Q3/’10 MP:Q4/’10
PKG:44-TSOP CS:NOW MP:Q2/’10
PKG:48-TSOP CS:Q3/’10 MP:Q4/’10
0.18µmx16
4Mb
0.15µm Advanced x16
4Mb
0.15µm Advanced x8/x16
8Mb
0.15µm Advanced x8/x16
16Mb
0.15µm Advanced x8/x16
32Mb
High-Speed
SRAM
Low-Power
SRAM
Note: Timing of sample shipments and start of mass production are subject to change without prior notice.
A0
A1
A2
Vss
Vcc
WP
SCL
SDA
/S
Q
/W
Vss
Vcc
/HOLD
C
D
CS
SK
Di
Do
Vcc
NC
NC
GND
I2C bus
SPI bus
Interface
64Kx8
32Kx8
16Kx8
8Kx8
4Kx8
2Kx8
1Kx8
512x8
256x8
64Kx8
32Kx8
16Kx8
8Kx8
4Kx8
2Kx8
1Kx8
512x8
256x8
Memory
configuration
(words x bits)
Package
Write protect
area
Full size
Upper 1/4,
Upper 1/2,
Full size
Page size
(bytes)
128
64
64
32
32
16
16
16
16
128
64
64
32
32
32
32
16
16
Write
cycle time
(sec.)
5m
5m
Memory density
(bits)
512K
256K
128K
64K
32K
16K
8K
4K
2K
512K
256K
128K
64K
32K
16K
8K
4K
2K
*2.5V to 5.5V / 1.8V to 5.5V
SOP8 TSSOP8
Operating
frequency
(Hz)
400k
5M/ 3M*
Power supply
voltage
(V)
1.8 to 5.5
1.8 to 5.5
Operating
temperature
range (°C)
-40 to 85
-40 to 85
I2C-bus
(2-wire type)
SPI-bus
(3-wire type)
Microwire-bus
(3-wire type)
400kHz to 1MHz
3MHz to 5MHz
250kHz to 1MHz
Up to 1M
Up to 512K
Up to 16K
Highly reliable SRAM/EEPROM
We continue to develop products with high added value for automotive applications.
5V/3V dual power supply support
3V support only
Extensive product lineup
Support for many MCUs
Extensive product lineup
High-speed performance
Long history
Small density
Low speed
Mass production starts in fiscal 2010
Under development
1211
Automotive-Grade SRAM Lineup
* Product numbers of automotive-grade versions are subject to change.
Fast SRAM
Low-power SRAM
R1RP0416DSD
R1RW0416DSD
R1LV0416DSD
R1LV0816ASB
R1LV0816ASA
R1LV1616RSF
R1LV3216RSF
x16
x16
x16
x8 / x16
x8 / x16
x8 / x16
4Mb
4Mb
8Mb
16Mb
32Mb
4.5 to 5.5V
3.0 to 3.6V
2.7 to 3.6V
2.7 to 3.6V
2.7 to 3.6V
2.7 to 3.6V
Lead frame:Cu
Product Density Power supply voltage Word size Product No.*Remarks
Package
44-TSOP
44-TSOP
44-TSOP
48-TSOP
48-TSOP
48-TSOP
Low-Power SRAM Low-Power SRAM
IC Function Tables
XG version:
Ultralow-standby current version
(2.4µA) (Vcc=3.0-3.6V)
SC: Low-standby current version
(10µA), CSC Series is reverse
type employing TSOP(32)
Advanced low-power SRAM,
S: Low-standby current version
(10µA)
Advanced low-power SRAM,
S: Low-standby current version
(10µA)
Advanced low-power SRAM,
Single chip select pin type
256Kx8
128Kx16
128Kx8
32Kx8
256Kx16
SOP(32)
SOP(32)
TSOP(32)
TSOP(32)
TSOP(32)
TSOP(32)
SOP(32)
SOP(32)
TSOP(32)
TSOP(32)
TSOP(32)
TSOP(32)
SOP(32)
SOP(32)
sTSOP(32)
sTSOP(32)
TSOP(32)
TSOP(32)
SOP(32)
SOP(32)
sTSOP(32)
sTSOP(32)
TSOP(32)
TSOP(32)
TSOP(44)
TSOP(44)
FBGA(48)
FBGA(48)
TSOP(44)
TSOP(44)
sTSOP(32)
TSOP(44)
TSOP(44)
SOP(32)
SOP(32)
TSOP(32)
TSOP(32)
TSOP(32)
TSOP(32)
sTSOP(32)
sTSOP(32)
SOP(32)
SOP(32)
TSOP(32)
TSOP(32)
TSOP(32)
TSOP(32)
sTSOP(32)
sTSOP(32)
SOP(32)
TSOP(32)
sTSOP(32)
SOP(32)
TSOP(32)
sTSOP(32)
SOP(28)
SOP(28)
SOP(28)
SOP(28)
TSOP(28)
TSOP(28)
TSOP(28)
TSOP(28)
SOP(28)
TSOP(28)
SOP(28)
SOP(28)
TSOP(28)
TSOP(28)
SOP(28)
TSOP(28)
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
70
70
70
70
70
70
55
55
70
70
55
55
70
70
70
70
70
70
70
70
70
70
4.5 to 5.5
2.7 to 3.6
2.7 to 3.6
2.7 to 3.6
2.7 to 3.6
2.7 to 3.6
4.5 to 5.5
2.7 to 3.6
4.5 to 5.5
3.0 to 3.6 &
4.5 to 5.5
-20 to 70
-40 to 85
0 to 70
-40 to 85
-40 to 85
-40 to 85
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
R1LP0408CSP-5SC
R1LP0408CSP-7LC
R1LP0408CSB-5SC
R1LP0408CSB-7LC
R1LP0408CSC-5SC
R1LP0408CSC-7LC
R1LP0408CSP-5SI
R1LP0408CSP-7LI
R1LP0408CSB-5SI
R1LP0408CSB-7LI
R1LP0408CSC-5SI
R1LP0408CSC-7LI
R1LV0408DSP-5SR
R1LV0408DSP-7LR
R1LV0408DSA-5SR
R1LV0408DSA-7LR
R1LV0408DSB-5SR
R1LV0408DSB-7LR
R1LV0408DSP-5SI
R1LV0408DSP-7LI
R1LV0408DSA-5SI
R1LV0408DSA-7LI
R1LV0408DSB-5SI
R1LV0408DSB-7LI
R1LV0416DSB-5SI
R1LV0416DSB-7LI
R1LV0416DBG-5SI
R1LV0416DBG-7LI
R1LV0414DSB-5SI
R1LV0414DSB-7LI
M5M5V208AKV-70HI
M5M5V216ATP-55HI
M5M5V216ATP-70HI
M5M51008DFP-55H
M5M51008DFP-70H
M5M51008DVP-55H
M5M51008DVP-70H
M5M51008DRV-55H
M5M51008DRV-70H
M5M51008DKV-55H
M5M51008DKV-70H
M5M51008DFP-55HI
M5M51008DFP-70HI
M5M51008DVP-55HI
M5M51008DVP-70HI
M5M51008DRV-55HI
M5M51008DRV-70HI
M5M51008DKV-55HI
M5M51008DKV-70HI
M5M5V108DFP-70H
M5M5V108DVP-70H
M5M5V108DKV-70H
M5M5V108DFP-70HI
M5M5V108DVP-70HI
M5M5V108DKV-70HI
M5M5256DFP-55LL
M5M5256DFP-55XL
M5M5256DFP-70LL
M5M5256DFP-70XL
M5M5256DVP-55LL
M5M5256DVP-55XL
M5M5256DVP-70LL
M5M5256DVP-70XL
M5M5256DFP-70LLI
M5M5256DVP-70LLI
M5M5256DFP-70G
M5M5256DFP-70XG
M5M5256DVP-70G
M5M5256DVP-70XG
M5M5256DFP-70GI
M5M5256DVP-70GI
512Kx8
*Please contact a Renesas Technology sales representative for details.
4M
2M
1M
256k
Memory
density
(bit)
Configuration
(word x bit)
Access Time
(ns) Functions/Features Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
PackagePart No.
DRV Series is reverse type
employing TSOP(32)
XL version:
Ultralow-standby current version
(5µA)
IC Function Tables
Memory
density
(bit)
Configuration
(word x bit)
Access Time
(ns) Functions/Features Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
PackagePart No.
*Please contact a Renesas Technology sales representative for details.
Advanced low-power SRAM
µTSOP(52)
µTSOP(52)
µTSOP(52)
µTSOP(52)
TSOP(48)
TSOP(48)
TSOP(48)
TSOP(48)
FBGA(48)
FBGA(48)
FBGA(48)
FBGA(48)
µTSOP(52)
µTSOP(52)
µTSOP(52)
µTSOP(52)
TSOP(48)
TSOP(48)
TSOP(48)
TSOP(48)
FBGA(48)
FBGA(48)
µTSOP(52)
µTSOP(52)
µTSOP(52)
µTSOP(52)
TSOP(48)
TSOP(48)
TSOP(48)
TSOP(48)
TSOP(48)
TSOP(48)
FBGA(48)
FBGA(48)
FBGA(48)
FBGA(48)
FBGA(48)
FBGA(48)
µTSOP(52)
µTSOP(52)
TSOP(48)
TSOP(48)
TSOP(44)
TSOP(44)
FBGA(48)
FBGA(48)
TSOP(44)
TSOP(44)
TSOP(44)
TSOP(44)
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
70
70
55*
70
55*
70
55*
70
55*
70
45
55
55*
70
55*
70
45
55
55
70
55
70
55
70
55
70
55
70
55
55
R1WV6416RSD-5SR
R1WV6416RSD-7SR
R1WV6416RSD-5SI
R1WV6416RSD-7SI
R1WV6416RSA-5SR
R1WV6416RSA-7SR
R1WV6416RSA-5SI
R1WV6416RSA-7SI
R1WV6416RBG-5SR
R1WV6416RBG-7SR
R1WV6416RBG-5SI
R1WV6416RBG-7SI
R1LV3216RSD-5SR
R1LV3216RSD-7SR
R1LV3216RSD-5SI
R1LV3216RSD-7SI
R1LV3216RSA-5SR
R1LV3216RSA-7SR
R1LV3216RSA-5SI
R1LV3216RSA-7SI
R1WV3216RBG-7SR
R1WV3216RBG-7SI
R1LV1616RSD-5SR
R1LV1616RSD-7SR
R1LV1616RSD-5SI
R1LV1616RSD-7SI
R1LV1616RSA-5SR
R1LV1616RSA-7SR
R1LV1616RSA-5SI
R1LV1616RSA-7SI
R1LV1616HSA-4SI
R1LV1616HSA-5SI
R1LV1616RBG-5SR
R1LV1616RBG-7SR
R1lV1616RBG-5SI
R1LV1616RBG-7SI
R1LV1616HBG-4SI
R1LV1616RBG-5SI
R1LV0816ASD-5SI
R1LV0816ASD-7SI
R1LV0816ASA-5SI
R1LV0816ASA-7SI
R1LV0816ASB-5SI
R1LV0816ASB-7SI
R1LV0816ABG-5SI
R1LV0816ABG-7SI
R1LV0808ASB-5SI
R1LV0808ASB-7SI
HM6216514LTTI-5SL
HM628100LTTI-5SL
Advanced low-power SRAM
Full CMOS low-power SRAM
64M
32M
16M
8M
2Mx16/
4Mx8
2Mx16
1Mx16/
2Mx8
1Mx16
512Kx16 / 1Mx8
512Kx16
1Mx8
4Mx16/
8Mx8
4Mx16
2.7 ~ 3.6
2.7 ~ 3.6
2.7 ~ 3.6
2.4 ~ 3.6
4.5 ~ 5.5
2.7 ~ 3.6
2.7 ~ 3.6
2.7 ~ 3.6
0 ~ 70
-40 ~ 85
0 ~ 70
-40 ~ 85
0 ~ 70
-40 ~ 85
0 ~ 70
-40 ~ 85
0 ~ 70
-40 ~ 85
0 ~ 70
-40 ~ 85
-40 ~ 85
-40 ~ 85
0 ~ 70
-40 ~ 85
0 ~ 70
-40 ~ 85
0 ~ 70
-40 ~ 85
512Kx16
1Mx8
Advanced low-power SRAM,
×8 switching by byte #
Advanced low-power SRAM,
×8 switching by byte #,
32Mb + 32Mb stacked MCP
Advanced low-power SRAM,
32Mb single chip,
×8 switching by byte #
Full CMOS low-power SRAM,
×8 switching by byte #
Full CMOS low-power SRAM
Advanced low-power SRAM,
×8 switching by byte #
Advanced low-power SRAM
Advanced low-power SRAM,
16Mb + 16Mb stacked MCP
Advanced low-power SRAM,
32Mb + 32Mb stacked MCP
1413
Low-Power SRAM Low-Power SRAM
IC Function Tables
XG version:
Ultralow-standby current version
(2.4µA) (Vcc=3.0-3.6V)
SC: Low-standby current version
(10µA), CSC Series is reverse
type employing TSOP(32)
Advanced low-power SRAM,
S: Low-standby current version
(10µA)
Advanced low-power SRAM,
S: Low-standby current version
(10µA)
Advanced low-power SRAM,
Single chip select pin type
256Kx8
128Kx16
128Kx8
32Kx8
256Kx16
SOP(32)
SOP(32)
TSOP(32)
TSOP(32)
TSOP(32)
TSOP(32)
SOP(32)
SOP(32)
TSOP(32)
TSOP(32)
TSOP(32)
TSOP(32)
SOP(32)
SOP(32)
sTSOP(32)
sTSOP(32)
TSOP(32)
TSOP(32)
SOP(32)
SOP(32)
sTSOP(32)
sTSOP(32)
TSOP(32)
TSOP(32)
TSOP(44)
TSOP(44)
FBGA(48)
FBGA(48)
TSOP(44)
TSOP(44)
sTSOP(32)
TSOP(44)
TSOP(44)
SOP(32)
SOP(32)
TSOP(32)
TSOP(32)
TSOP(32)
TSOP(32)
sTSOP(32)
sTSOP(32)
SOP(32)
SOP(32)
TSOP(32)
TSOP(32)
TSOP(32)
TSOP(32)
sTSOP(32)
sTSOP(32)
SOP(32)
TSOP(32)
sTSOP(32)
SOP(32)
TSOP(32)
sTSOP(32)
SOP(28)
SOP(28)
SOP(28)
SOP(28)
TSOP(28)
TSOP(28)
TSOP(28)
TSOP(28)
SOP(28)
TSOP(28)
SOP(28)
SOP(28)
TSOP(28)
TSOP(28)
SOP(28)
TSOP(28)
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
70
70
70
70
70
70
55
55
70
70
55
55
70
70
70
70
70
70
70
70
70
70
4.5 to 5.5
2.7 to 3.6
2.7 to 3.6
2.7 to 3.6
2.7 to 3.6
2.7 to 3.6
4.5 to 5.5
2.7 to 3.6
4.5 to 5.5
3.0 to 3.6 &
4.5 to 5.5
-20 to 70
-40 to 85
0 to 70
-40 to 85
-40 to 85
-40 to 85
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
R1LP0408CSP-5SC
R1LP0408CSP-7LC
R1LP0408CSB-5SC
R1LP0408CSB-7LC
R1LP0408CSC-5SC
R1LP0408CSC-7LC
R1LP0408CSP-5SI
R1LP0408CSP-7LI
R1LP0408CSB-5SI
R1LP0408CSB-7LI
R1LP0408CSC-5SI
R1LP0408CSC-7LI
R1LV0408DSP-5SR
R1LV0408DSP-7LR
R1LV0408DSA-5SR
R1LV0408DSA-7LR
R1LV0408DSB-5SR
R1LV0408DSB-7LR
R1LV0408DSP-5SI
R1LV0408DSP-7LI
R1LV0408DSA-5SI
R1LV0408DSA-7LI
R1LV0408DSB-5SI
R1LV0408DSB-7LI
R1LV0416DSB-5SI
R1LV0416DSB-7LI
R1LV0416DBG-5SI
R1LV0416DBG-7LI
R1LV0414DSB-5SI
R1LV0414DSB-7LI
M5M5V208AKV-70HI
M5M5V216ATP-55HI
M5M5V216ATP-70HI
M5M51008DFP-55H
M5M51008DFP-70H
M5M51008DVP-55H
M5M51008DVP-70H
M5M51008DRV-55H
M5M51008DRV-70H
M5M51008DKV-55H
M5M51008DKV-70H
M5M51008DFP-55HI
M5M51008DFP-70HI
M5M51008DVP-55HI
M5M51008DVP-70HI
M5M51008DRV-55HI
M5M51008DRV-70HI
M5M51008DKV-55HI
M5M51008DKV-70HI
M5M5V108DFP-70H
M5M5V108DVP-70H
M5M5V108DKV-70H
M5M5V108DFP-70HI
M5M5V108DVP-70HI
M5M5V108DKV-70HI
M5M5256DFP-55LL
M5M5256DFP-55XL
M5M5256DFP-70LL
M5M5256DFP-70XL
M5M5256DVP-55LL
M5M5256DVP-55XL
M5M5256DVP-70LL
M5M5256DVP-70XL
M5M5256DFP-70LLI
M5M5256DVP-70LLI
M5M5256DFP-70G
M5M5256DFP-70XG
M5M5256DVP-70G
M5M5256DVP-70XG
M5M5256DFP-70GI
M5M5256DVP-70GI
512Kx8
*Please contact a Renesas Technology sales representative for details.
4M
2M
1M
256k
Memory
density
(bit)
Configuration
(word x bit)
Access Time
(ns) Functions/Features Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
PackagePart No.
DRV Series is reverse type
employing TSOP(32)
XL version:
Ultralow-standby current version
(5µA)
IC Function Tables
Memory
density
(bit)
Configuration
(word x bit)
Access Time
(ns) Functions/Features Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
PackagePart No.
*Please contact a Renesas Technology sales representative for details.
Advanced low-power SRAM
µTSOP(52)
µTSOP(52)
µTSOP(52)
µTSOP(52)
TSOP(48)
TSOP(48)
TSOP(48)
TSOP(48)
FBGA(48)
FBGA(48)
FBGA(48)
FBGA(48)
µTSOP(52)
µTSOP(52)
µTSOP(52)
µTSOP(52)
TSOP(48)
TSOP(48)
TSOP(48)
TSOP(48)
FBGA(48)
FBGA(48)
µTSOP(52)
µTSOP(52)
µTSOP(52)
µTSOP(52)
TSOP(48)
TSOP(48)
TSOP(48)
TSOP(48)
TSOP(48)
TSOP(48)
FBGA(48)
FBGA(48)
FBGA(48)
FBGA(48)
FBGA(48)
FBGA(48)
µTSOP(52)
µTSOP(52)
TSOP(48)
TSOP(48)
TSOP(44)
TSOP(44)
FBGA(48)
FBGA(48)
TSOP(44)
TSOP(44)
TSOP(44)
TSOP(44)
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
55
70
70
70
55*
70
55*
70
55*
70
55*
70
45
55
55*
70
55*
70
45
55
55
70
55
70
55
70
55
70
55
70
55
55
R1WV6416RSD-5SR
R1WV6416RSD-7SR
R1WV6416RSD-5SI
R1WV6416RSD-7SI
R1WV6416RSA-5SR
R1WV6416RSA-7SR
R1WV6416RSA-5SI
R1WV6416RSA-7SI
R1WV6416RBG-5SR
R1WV6416RBG-7SR
R1WV6416RBG-5SI
R1WV6416RBG-7SI
R1LV3216RSD-5SR
R1LV3216RSD-7SR
R1LV3216RSD-5SI
R1LV3216RSD-7SI
R1LV3216RSA-5SR
R1LV3216RSA-7SR
R1LV3216RSA-5SI
R1LV3216RSA-7SI
R1WV3216RBG-7SR
R1WV3216RBG-7SI
R1LV1616RSD-5SR
R1LV1616RSD-7SR
R1LV1616RSD-5SI
R1LV1616RSD-7SI
R1LV1616RSA-5SR
R1LV1616RSA-7SR
R1LV1616RSA-5SI
R1LV1616RSA-7SI
R1LV1616HSA-4SI
R1LV1616HSA-5SI
R1LV1616RBG-5SR
R1LV1616RBG-7SR
R1lV1616RBG-5SI
R1LV1616RBG-7SI
R1LV1616HBG-4SI
R1LV1616RBG-5SI
R1LV0816ASD-5SI
R1LV0816ASD-7SI
R1LV0816ASA-5SI
R1LV0816ASA-7SI
R1LV0816ASB-5SI
R1LV0816ASB-7SI
R1LV0816ABG-5SI
R1LV0816ABG-7SI
R1LV0808ASB-5SI
R1LV0808ASB-7SI
HM6216514LTTI-5SL
HM628100LTTI-5SL
Advanced low-power SRAM
Full CMOS low-power SRAM
64M
32M
16M
8M
2Mx16/
4Mx8
2Mx16
1Mx16/
2Mx8
1Mx16
512Kx16 / 1Mx8
512Kx16
1Mx8
4Mx16/
8Mx8
4Mx16
2.7 ~ 3.6
2.7 ~ 3.6
2.7 ~ 3.6
2.4 ~ 3.6
4.5 ~ 5.5
2.7 ~ 3.6
2.7 ~ 3.6
2.7 ~ 3.6
0 ~ 70
-40 ~ 85
0 ~ 70
-40 ~ 85
0 ~ 70
-40 ~ 85
0 ~ 70
-40 ~ 85
0 ~ 70
-40 ~ 85
0 ~ 70
-40 ~ 85
-40 ~ 85
-40 ~ 85
0 ~ 70
-40 ~ 85
0 ~ 70
-40 ~ 85
0 ~ 70
-40 ~ 85
512Kx16
1Mx8
Advanced low-power SRAM,
×8 switching by byte #
Advanced low-power SRAM,
×8 switching by byte #,
32Mb + 32Mb stacked MCP
Advanced low-power SRAM,
32Mb single chip,
×8 switching by byte #
Full CMOS low-power SRAM,
×8 switching by byte #
Full CMOS low-power SRAM
Advanced low-power SRAM,
×8 switching by byte #
Advanced low-power SRAM
Advanced low-power SRAM,
16Mb + 16Mb stacked MCP
Advanced low-power SRAM,
32Mb + 32Mb stacked MCP
1413
Fast SRAM
Asynchronous SRAM
Network SRAM
36MQDR™ SRAM Series
IC Function Tables
4Mx9
2Mx18
1Mx36
36M
SOJ(32)
SOJ(32)
SOJ(32)
SOJ(32)
SOJ(36)
SOJ(36)
SOJ(36)
SOJ(36)
SOJ(36)
SOJ(36)
SOJ(36)
SOJ(36)
SOJ(44)
TSOP(44)
SOJ(44)
SOJ(44)
SOJ(44)
SOJ(44)
TSOP(44)
TSOP(44)
TSOP(44)
TSOP(44)
TSOP(44)
SOJ(44)
TSOP(44)
SOJ(44)
SOJ(44)
SOJ(44)
SOJ(44)
TSOP(44)
TSOP(44)
TSOP(44)
TSOP(44)
TSOP(44)
12
12
12
12
12
12
12
12
12
12
12
12
10
10
12
12
12
12
10
12
12
12
12
10
10
12
12
12
12
10
12
12
12
12
R1RW0404DGE-2PR
R1RW0404DGE-2LR
R1RP0404DGE-2PR
R1RP0404DGE-2LR
R1RW0408DGE-0PR
R1RW0408DGE-2PR
R1RW0408DGE-2LR
R1RW0408DGE-2PI
R1RP0408DGE-0PR
R1RP0408DGE-2PR
R1RP0408DGE-2LR
R1RP0408DGE-2PI
R1RW0416DGE-0PR
R1RW0416DSB-0PI
R1RW0416DGE-2PR
R1RW0416DGE-2LR
R1RW0416DGE-2SR
R1RW0416DGE-2PI
R1RW0416DSB-0PR
R1RW0416DSB-2PR
R1RW0416DSB-2LR
R1RW0416DSB-2SR
R1RW0416DSB-2PI
R1RP0416DGE-0PR
R1RP0416DSB-0PI
R1RP0416DGE-2PR
R1RP0416DGE-2LR
R1RP0416DGE-2SR
R1RP0416DGE-2PI
R1RP0416DSB-0PR
R1RP0416DSB-2PR
R1RP0416DSB-2LR
R1RP0416DSB-2SR
R1RP0416DSB-2PI
4M 1Mx4
512Kx8
256Kx16
3.0 to 3.6
4.5 to 5.5
3.0 to 3.6
4.5 to 5.5
3.0 to 3.6
4.5 to 5.5
0 to 70
0 to 70
0 to 70
-40 to 85
0 to 70
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
L: Low-standby current version (0.8mA)
L: Low-standby current version (0.8mA)
L: Low-standby current version (0.8mA)
L: Low-standby current version (0.8mA)
Notes
1. When ordering the lead-free version, append “B0” to the end of the product number (example: R1Q2A3609BBG-50RB0).
2. When ordering the wide operating temperature range version, replace the “R” at the end of the product number with “I” (example: R1Q2A3609BBG-50I).
Memory
density
(bit)
Configuration
(word x bit) Functions /Features I/O Power Supply
Voltage VDDQ (V)
Operating Ambient
Temperature (˚C)
Package
TQFP(100)
TQFP(100)
Operating
Frequency (MHz)
100
167
3.3 0 to 70
-40 to 85
Part No.
M5M5V5A36GP-85
M5M5V5636GP-16I
512Kx36
Power Supply
Voltage VDD (V)
3.3 ± 0.165
18M Flow-rough Read
Access time:8.55ns
QDR™-II
4 Word Burst
HSTL interface
DDR-II
2 Word Burst
HSTL interface
DDR-II
4 Word Burst
HSTL interface
QDR™-II
2 Word Burst
HSTL interface
QDR™-II
4 Word Burst
HSTL interface
DDR-II
2 Word Burst
HSTL interface
DDR-II
4 Word Burst
HSTL interface
QDR™-II
2 Word Burst
HSTL interface
QDR™-II
4 Word Burst
HSTL interface
L: Low-standby current version (0.8mA)
S: Ultralow-standby current version
(0.5mA)
L: Low-standby current version (0.8mA)
S: Ultralow-standby current version
(0.5mA)
3.3 ± 0.165
2.5 ± 0.125
3.3/2.5
2.5
Pipeline Read
Double Late Write
Memory
density
(bit)
Configuration
(word x bit) Functions / Features
Package
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
Operating
Frequency (MHz)
250
200
167
300
250
200
167
300
250
300
250
250
200
167
300
250
200
167
300
250
300
250
250
200
167
300
250
200
167
Part No.
R1Q2A3609BBG-40R
R1Q2A3609BBG-50R
R1Q2A3609BBG-60R
R1Q3A3609BBG-33R
R1Q3A3609BBG-40R
R1Q3A3609BBG-50R
R1Q3A3609BBG-60R
R1Q4A3618BBG-33R
R1Q4A3618BBG-40R
R1Q5A3618BBG-33R
R1Q5A3618BBG-40R
R1Q2A3618BBG-40R
R1Q2A3618BBG-50R
R1Q2A3618BBG-60R
R1Q3A3618BBG-33R
R1Q3A3618BBG-40R
R1Q3A3618BBG-50R
R1Q3A3618BBG-60R
R1Q4A3636BBG-33R
R1Q4A3636BBG-40R
R1Q5A3636BBG-33R
R1Q5A3636BBG-40R
R1Q2A3636BBG-40R
R1Q2A3636BBG-50R
R1Q2A3636BBG-60R
R1Q3A3636BBG-33R
R1Q3A3636BBG-40R
R1Q3A3636BBG-50R
R1Q3A3636BBG-60R
QDR™-II
2 Word Burst
HSTL interface
I/O Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
Power Supply
Voltage (V)
1.5/1.8 typ. 0 to 701.7 to 1.9
Memory
density
(bit)
Configuration
(word x bit)
Access Time
(ns) Functions/Features Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
PackagePart No.
IC Function Tables
1615
Fast SRAM
Asynchronous SRAM
Network SRAM
36MQDR™ SRAM Series
IC Function Tables
4Mx9
2Mx18
1Mx36
36M
SOJ(32)
SOJ(32)
SOJ(32)
SOJ(32)
SOJ(36)
SOJ(36)
SOJ(36)
SOJ(36)
SOJ(36)
SOJ(36)
SOJ(36)
SOJ(36)
SOJ(44)
TSOP(44)
SOJ(44)
SOJ(44)
SOJ(44)
SOJ(44)
TSOP(44)
TSOP(44)
TSOP(44)
TSOP(44)
TSOP(44)
SOJ(44)
TSOP(44)
SOJ(44)
SOJ(44)
SOJ(44)
SOJ(44)
TSOP(44)
TSOP(44)
TSOP(44)
TSOP(44)
TSOP(44)
12
12
12
12
12
12
12
12
12
12
12
12
10
10
12
12
12
12
10
12
12
12
12
10
10
12
12
12
12
10
12
12
12
12
R1RW0404DGE-2PR
R1RW0404DGE-2LR
R1RP0404DGE-2PR
R1RP0404DGE-2LR
R1RW0408DGE-0PR
R1RW0408DGE-2PR
R1RW0408DGE-2LR
R1RW0408DGE-2PI
R1RP0408DGE-0PR
R1RP0408DGE-2PR
R1RP0408DGE-2LR
R1RP0408DGE-2PI
R1RW0416DGE-0PR
R1RW0416DSB-0PI
R1RW0416DGE-2PR
R1RW0416DGE-2LR
R1RW0416DGE-2SR
R1RW0416DGE-2PI
R1RW0416DSB-0PR
R1RW0416DSB-2PR
R1RW0416DSB-2LR
R1RW0416DSB-2SR
R1RW0416DSB-2PI
R1RP0416DGE-0PR
R1RP0416DSB-0PI
R1RP0416DGE-2PR
R1RP0416DGE-2LR
R1RP0416DGE-2SR
R1RP0416DGE-2PI
R1RP0416DSB-0PR
R1RP0416DSB-2PR
R1RP0416DSB-2LR
R1RP0416DSB-2SR
R1RP0416DSB-2PI
4M 1Mx4
512Kx8
256Kx16
3.0 to 3.6
4.5 to 5.5
3.0 to 3.6
4.5 to 5.5
3.0 to 3.6
4.5 to 5.5
0 to 70
0 to 70
0 to 70
-40 to 85
0 to 70
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
L: Low-standby current version (0.8mA)
L: Low-standby current version (0.8mA)
L: Low-standby current version (0.8mA)
L: Low-standby current version (0.8mA)
Notes
1. When ordering the lead-free version, append “B0” to the end of the product number (example: R1Q2A3609BBG-50RB0).
2. When ordering the wide operating temperature range version, replace the “R” at the end of the product number with “I” (example: R1Q2A3609BBG-50I).
Memory
density
(bit)
Configuration
(word x bit) Functions /Features I/O Power Supply
Voltage VDDQ (V)
Operating Ambient
Temperature (˚C)
Package
TQFP(100)
TQFP(100)
Operating
Frequency (MHz)
100
167
3.3 0 to 70
-40 to 85
Part No.
M5M5V5A36GP-85
M5M5V5636GP-16I
512Kx36
Power Supply
Voltage VDD (V)
3.3 ± 0.165
18M Flow-rough Read
Access time:8.55ns
QDR™-II
4 Word Burst
HSTL interface
DDR-II
2 Word Burst
HSTL interface
DDR-II
4 Word Burst
HSTL interface
QDR™-II
2 Word Burst
HSTL interface
QDR™-II
4 Word Burst
HSTL interface
DDR-II
2 Word Burst
HSTL interface
DDR-II
4 Word Burst
HSTL interface
QDR™-II
2 Word Burst
HSTL interface
QDR™-II
4 Word Burst
HSTL interface
L: Low-standby current version (0.8mA)
S: Ultralow-standby current version
(0.5mA)
L: Low-standby current version (0.8mA)
S: Ultralow-standby current version
(0.5mA)
3.3 ± 0.165
2.5 ± 0.125
3.3/2.5
2.5
Pipeline Read
Double Late Write
Memory
density
(bit)
Configuration
(word x bit) Functions / Features
Package
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
Operating
Frequency (MHz)
250
200
167
300
250
200
167
300
250
300
250
250
200
167
300
250
200
167
300
250
300
250
250
200
167
300
250
200
167
Part No.
R1Q2A3609BBG-40R
R1Q2A3609BBG-50R
R1Q2A3609BBG-60R
R1Q3A3609BBG-33R
R1Q3A3609BBG-40R
R1Q3A3609BBG-50R
R1Q3A3609BBG-60R
R1Q4A3618BBG-33R
R1Q4A3618BBG-40R
R1Q5A3618BBG-33R
R1Q5A3618BBG-40R
R1Q2A3618BBG-40R
R1Q2A3618BBG-50R
R1Q2A3618BBG-60R
R1Q3A3618BBG-33R
R1Q3A3618BBG-40R
R1Q3A3618BBG-50R
R1Q3A3618BBG-60R
R1Q4A3636BBG-33R
R1Q4A3636BBG-40R
R1Q5A3636BBG-33R
R1Q5A3636BBG-40R
R1Q2A3636BBG-40R
R1Q2A3636BBG-50R
R1Q2A3636BBG-60R
R1Q3A3636BBG-33R
R1Q3A3636BBG-40R
R1Q3A3636BBG-50R
R1Q3A3636BBG-60R
QDR™-II
2 Word Burst
HSTL interface
I/O Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
Power Supply
Voltage (V)
1.5/1.8 typ. 0 to 701.7 to 1.9
Memory
density
(bit)
Configuration
(word x bit)
Access Time
(ns) Functions/Features Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
PackagePart No.
IC Function Tables
1615
72MQDR™
SRAM Series
72MQDR™
-II+ SRAM Series (Latency 2.5, No ODT)
IC Function Tables
8Mx9
4Mx18
2Mx36
72M BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
450
400
450
400
450
400
533
500
450
533
500
450
533
500
450
533
500
450
533
500
450
533
500
450
R1QAA7209RBG-22RA0
R1QAA7209RBG-25RA0
R1QBA7209RBG-22RA0
R1QBA7209RBG-25RA0
R1QCA7209RBG-22RA0
R1QCA7209RBG-25RA0
R1QAA7218RBG-19RA0
R1QAA7218RBG-20RA0
R1QAA7218RBG-22RA0
R1QBA7218RBG-19RA0
R1QBA7218RBG-20RA0
R1QBA7218RBG-22RA0
R1QCA7218RBG-19RA0
R1QCA7218RBG-20RA0
R1QCA7218RBG-22RA0
R1QAA7236RBG-19RA0
R1QAA7236RBG-20RA0
R1QAA7236RBG-22RA0
R1QBA7236RBG-19RA0
R1QBA7236RBG-20RA0
R1QBA7236RBG-22RA0
R1QCA7236RBG-19RA0
R1QCA7236RBG-20RA0
R1QCA7236RBG-22RA0
Notes
1. When ordering the lead-free version, replace the “A0” at the end of the product number with “B0” (example: R1QAA7209RBG-22RB0).
2. When ordering the wide operating temperature range version, replace the “R” at the end of the product number with “I” (example: R1QAA7209RBG-22I).
3. ODT stands for “on-die termination.”
QDR
™
-II+
4 Word Burst
HSTL interface
Latency 2.5, No ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.5, No ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.5, No ODT
QDR
™
-II+
4 Word Burst
HSTL interface
Latency 2.5, No ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.5, No ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.5, No ODT
QDR
™
-II+
4 Word Burst
HSTL interface
Latency 2.5, No ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.5, No ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.5, No ODT
DDR-II
4 Word Burst
HSTL interface
QDR™-II
2 Word Burst
HSTL interface
QDR™-II
4 Word Burst
HSTL interface
1.5V typ. 0 to 701.7 to 1.9
8Mx9
4Mx18
2Mx36
72M BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
250
200
250
200
250
200
250
200
333
300
250
333
300
250
250
200
333
300
250
333
300
250
333
300
250
250
200
333
300
250
R1Q2A7209RBG-40RA0
R1Q2A7209RBG-50RA0
R1Q3A7209RBG-40RA0
R1Q3A7209RBG-50RA0
R1Q4A7209RBG-40RA0
R1Q4A7209RBG-50RA0
R1Q5A7209RBG-40RA0
R1Q5A7209RBG-50RA0
R1Q4A7218RBG-30RA0
R1Q4A7218RBG-33RA0
R1Q4A7218RBG-40RA0
R1Q5A7218RBG-30RA0
R1Q5A7218RBG-33RA0
R1Q5A7218RBG-40RA0
R1Q2A7218RBG-40RA0
R1Q2A7218RBG-50RA0
R1Q3A7218RBG-30RA0
R1Q3A7218RBG-33RA0
R1Q3A7218RBG-40RA0
R1Q4A7236RBG-30RA0
R1Q4A7236RBG-33RA0
R1Q4A7236RBG-40RA0
R1Q5A7236RBG-30RA0
R1Q5A7236RBG-33RA0
R1Q5A7236RBG-40RA0
R1Q2A7236RBG-40RA0
R1Q2A7236RBG-50RA0
R1Q3A7236RBG-30RA0
R1Q3A7236RBG-33RA0
R1Q3A7236RBG-40RA0
Notes
1. When ordering the lead-free version, replace the “A0” at the end of the product number with “B0” (example: R1Q2A7209RBG-40RB0).
2. When ordering the wide operating temperature range version, replace the “R” at the end of the product number with “I” (example: R1Q2A7209RBG-40I).
QDR™-II
2 Word Burst
HSTL interface
QDR™-II
4 Word Burst
HSTL interface
DDR-II
2 Word Burst
HSTL interface
DDR-II
4 Word Burst
HSTL interface
DDR-II
2 Word Burst
HSTL interface
DDR-II
4 Word Burst
HSTL interface
QDR™-II
2 Word Burst
HSTL interface
QDR™-II
4 Word Burst
HSTL interface
DDR-II
2 Word Burst
HSTL interface
1.5/1.8 typ. 0 to 701.7 to 1.9
Memory
Density
(bit)
Configuration
(word x bit) Functions / Features
Package
Operating
Frequency (MHz)
Part No.
I/O Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
Power Supply
Voltage (V)
Memory
Density
(bit)
Configuration
(word x bit) Functions / Features
Package
Operating
Frequency (MHz)
Part No.
I/O Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
Power Supply
Voltage (V)
IC Function Tables
1817
72MQDR™
SRAM Series
72MQDR™
-II+ SRAM Series (Latency 2.5, No ODT)
IC Function Tables
8Mx9
4Mx18
2Mx36
72M BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
450
400
450
400
450
400
533
500
450
533
500
450
533
500
450
533
500
450
533
500
450
533
500
450
R1QAA7209RBG-22RA0
R1QAA7209RBG-25RA0
R1QBA7209RBG-22RA0
R1QBA7209RBG-25RA0
R1QCA7209RBG-22RA0
R1QCA7209RBG-25RA0
R1QAA7218RBG-19RA0
R1QAA7218RBG-20RA0
R1QAA7218RBG-22RA0
R1QBA7218RBG-19RA0
R1QBA7218RBG-20RA0
R1QBA7218RBG-22RA0
R1QCA7218RBG-19RA0
R1QCA7218RBG-20RA0
R1QCA7218RBG-22RA0
R1QAA7236RBG-19RA0
R1QAA7236RBG-20RA0
R1QAA7236RBG-22RA0
R1QBA7236RBG-19RA0
R1QBA7236RBG-20RA0
R1QBA7236RBG-22RA0
R1QCA7236RBG-19RA0
R1QCA7236RBG-20RA0
R1QCA7236RBG-22RA0
Notes
1. When ordering the lead-free version, replace the “A0” at the end of the product number with “B0” (example: R1QAA7209RBG-22RB0).
2. When ordering the wide operating temperature range version, replace the “R” at the end of the product number with “I” (example: R1QAA7209RBG-22I).
3. ODT stands for “on-die termination.”
QDR
™
-II+
4 Word Burst
HSTL interface
Latency 2.5, No ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.5, No ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.5, No ODT
QDR
™
-II+
4 Word Burst
HSTL interface
Latency 2.5, No ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.5, No ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.5, No ODT
QDR
™
-II+
4 Word Burst
HSTL interface
Latency 2.5, No ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.5, No ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.5, No ODT
DDR-II
4 Word Burst
HSTL interface
QDR™-II
2 Word Burst
HSTL interface
QDR™-II
4 Word Burst
HSTL interface
1.5V typ. 0 to 701.7 to 1.9
8Mx9
4Mx18
2Mx36
72M BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
250
200
250
200
250
200
250
200
333
300
250
333
300
250
250
200
333
300
250
333
300
250
333
300
250
250
200
333
300
250
R1Q2A7209RBG-40RA0
R1Q2A7209RBG-50RA0
R1Q3A7209RBG-40RA0
R1Q3A7209RBG-50RA0
R1Q4A7209RBG-40RA0
R1Q4A7209RBG-50RA0
R1Q5A7209RBG-40RA0
R1Q5A7209RBG-50RA0
R1Q4A7218RBG-30RA0
R1Q4A7218RBG-33RA0
R1Q4A7218RBG-40RA0
R1Q5A7218RBG-30RA0
R1Q5A7218RBG-33RA0
R1Q5A7218RBG-40RA0
R1Q2A7218RBG-40RA0
R1Q2A7218RBG-50RA0
R1Q3A7218RBG-30RA0
R1Q3A7218RBG-33RA0
R1Q3A7218RBG-40RA0
R1Q4A7236RBG-30RA0
R1Q4A7236RBG-33RA0
R1Q4A7236RBG-40RA0
R1Q5A7236RBG-30RA0
R1Q5A7236RBG-33RA0
R1Q5A7236RBG-40RA0
R1Q2A7236RBG-40RA0
R1Q2A7236RBG-50RA0
R1Q3A7236RBG-30RA0
R1Q3A7236RBG-33RA0
R1Q3A7236RBG-40RA0
Notes
1. When ordering the lead-free version, replace the “A0” at the end of the product number with “B0” (example: R1Q2A7209RBG-40RB0).
2. When ordering the wide operating temperature range version, replace the “R” at the end of the product number with “I” (example: R1Q2A7209RBG-40I).
QDR™-II
2 Word Burst
HSTL interface
QDR™-II
4 Word Burst
HSTL interface
DDR-II
2 Word Burst
HSTL interface
DDR-II
4 Word Burst
HSTL interface
DDR-II
2 Word Burst
HSTL interface
DDR-II
4 Word Burst
HSTL interface
QDR™-II
2 Word Burst
HSTL interface
QDR™-II
4 Word Burst
HSTL interface
DDR-II
2 Word Burst
HSTL interface
1.5/1.8 typ. 0 to 701.7 to 1.9
Memory
Density
(bit)
Configuration
(word x bit) Functions / Features
Package
Operating
Frequency (MHz)
Part No.
I/O Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
Power Supply
Voltage (V)
Memory
Density
(bit)
Configuration
(word x bit) Functions / Features
Package
Operating
Frequency (MHz)
Part No.
I/O Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
Power Supply
Voltage (V)
IC Function Tables
1817
72MQDR™
-II+ SRAM Series (Latency 2.5, With ODT)
72MQDR™
-II+ SRAM Series (Latency 2.0, No ODT)
IC Function Tables
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
375
333
375
333
375
333
450
400
450
400
450
400
450
400
450
400
450
400
R1QGA7209RBG-27RA0
R1QGA7209RBG-30RA0
R1QHA7209RBG-27RA0
R1QHA7209RBG-30RA0
R1QJA7209RBG-27RA0
R1QJA7209RBG-30RA0
R1QGA7218RBG-22RA0
R1QGA7218RBG-25RA0
R1QHA7218RBG-22RA0
R1QHA7218RBG-25RA0
R1QJA7218RBG-22RA0
R1QJA7218RBG-25RA0
R1QGA7236RBG-22RA0
R1QGA7236RBG-25RA0
R1QHA7236RBG-22RA0
R1QHA7236RBG-25RA0
R1QJA7236RBG-22RA0
R1QJA7236RBG-25RA0
8Mx9
4Mx18
2M x 36
72M
Notes
1. When ordering the lead-free version, replace the “A0” at the end of the product number with “B0” (example: R1QAA7209RBG-22RB0).
2. When ordering the wide operating temperature range version, replace the “R” at the end of the product number with “I” (example: R1QAA7209RBG-22I)
3. ODT stands for “on-die termination.”
QDR
™
-II+
4 Word Burst
HSTL interface
Latency 2.0, No ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.0, No ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.0, No ODT
QDR
™
-II+
4 Word Burst
HSTL interface
Latency 2.0, No ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.0, No ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.0, No ODT
QDR
™
-II+
4 Word Burst
HSTL interface
Latency 2.0, No ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.0, No ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.0, No ODT
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
450
400
450
400
450
400
533
500
450
533
500
450
533
500
450
533
500
450
533
500
450
533
500
450
R1QDA7209RBG-22RA0
R1QDA7209RBG-25RA0
R1QEA7209RBG-22RA0
R1QEA7209RBG-25RA0
R1QFA7209RBG-22RA0
R1QFA7209RBG-25RA0
R1QDA7218RBG-19RA0
R1QDA7218RBG-20RA0
R1QDA7218RBG-22RA0
R1QEA7218RBG-19RA0
R1QEA7218RBG-20RA0
R1QEA7218RBG-22RA0
R1QFA7218RBG-19RA0
R1QFA7218RBG-20RA0
R1QFA7218RBG-22RA0
R1QDA7236RBG-19RA0
R1QDA7236RBG-20RA0
R1QDA7236RBG-22RA0
R1QEA7236RBG-19RA0
R1QEA7236RBG-20RA0
R1QEA7236RBG-22RA0
R1QFA7236RBG-19RA0
R1QFA7236RBG-20RA0
R1QFA7236RBG-22RA0
8Mx9
4Mx18
2M x 36
72M
Notes
1. When ordering the lead-free version, replace the “A0” at the end of the product number with “B0” (example: R1QDA7209RBG-22RB0).
2. When ordering the wide operating temperature range version, replace the “R” at the end of the product number with “I” (example: R1QDA7209RBG-22I).
3. ODT stands for “on-die termination.”
QDR™-II+
4 Word Burst
HSTL interface
Latency 2.5, With ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.5, With ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.5, With ODT
QDR™-II+
4 Word Burst
HSTL interface
Latency 2.5, With ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.5, With ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.5, With ODT
QDR™-II+
4 Word Burst
HSTL interface
Latency 2.5, With ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.5, With ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.5, With ODT
1.5V typ. 0 to 701.7 to 1.9
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
375
333
375
333
375
333
450
400
450
400
450
400
450
400
450
400
450
400
R1QKA7209RBG-27RA0
R1QKA7209RBG-30RA0
R1QLA7209RBG-27RA0
R1QLA7209RBG-30RA0
R1QMA7209RBG-27RA0
R1QMA7209RBG-30RA0
R1QKA7218RBG-22RA0
R1QKA7218RBG-25RA0
R1QLA7218RBG-22RA0
R1QLA7218RBG-25RA0
R1QMA7218RBG-22RA0
R1QMA7218RBG-25RA0
R1QKA7236RBG-22RA0
R1QKA7236RBG-25RA0
R1QLA7236RBG-22RA0
R1QLA7236RBG-25RA0
R1QMA7236RBG-22RA0
R1QMA7236RBG-25RA0
8Mx9
4Mx18
2M x 36
72M
Notes
1. When ordering the lead-free version, replace the “A0” at the end of the product number with “B0” (example: R1QAA7209RBG-22RB0).
2. When ordering the wide operating temperature range version, replace the “R” at the end of the product number with “I” (example: R1QAA7209RBG-22I).
3. ODT stands for “on-die termination.”
QDR™-II+
4 Word Burst
HSTL interface
Latency 2.0, With ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.0, With ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.0, With ODT
QDR™-II+
4 Word Burst
HSTL interface
Latency 2.0, With ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.0, With ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.0, With ODT
QDR™-II+
4 Word Burst
HSTL interface
Latency 2.0, With ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.0, With ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.0, With ODT
1.5V typ. 0 to 701.7 to 1.9
72MQDR™
-II+ SRAM Series (Latency 2.0, With ODT)
1.5V typ. 0 to 701.7 to 1.9
Memory
Density
(bit)
Configuration
(word x bit) Functions / Features
Package
Operating
Frequency (MHz)
Part No.
I/O Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
Power Supply
Voltage (V)
Memory
Density
(bit)
Configuration
(word x bit) Functions / Features
Package
Operating
Frequency (MHz)
Part No.
I/O Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
Power Supply
Voltage (V)
Memory
Density
(bit)
Configuration
(word x bit) Functions / Features
Package
Operating
Frequency (MHz)
Part No.
I/O Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
Power Supply
Voltage (V)
IC Function Tables
2019
72MQDR™
-II+ SRAM Series (Latency 2.5, With ODT)
72MQDR™
-II+ SRAM Series (Latency 2.0, No ODT)
IC Function Tables
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
375
333
375
333
375
333
450
400
450
400
450
400
450
400
450
400
450
400
R1QGA7209RBG-27RA0
R1QGA7209RBG-30RA0
R1QHA7209RBG-27RA0
R1QHA7209RBG-30RA0
R1QJA7209RBG-27RA0
R1QJA7209RBG-30RA0
R1QGA7218RBG-22RA0
R1QGA7218RBG-25RA0
R1QHA7218RBG-22RA0
R1QHA7218RBG-25RA0
R1QJA7218RBG-22RA0
R1QJA7218RBG-25RA0
R1QGA7236RBG-22RA0
R1QGA7236RBG-25RA0
R1QHA7236RBG-22RA0
R1QHA7236RBG-25RA0
R1QJA7236RBG-22RA0
R1QJA7236RBG-25RA0
8Mx9
4Mx18
2M x 36
72M
Notes
1. When ordering the lead-free version, replace the “A0” at the end of the product number with “B0” (example: R1QAA7209RBG-22RB0).
2. When ordering the wide operating temperature range version, replace the “R” at the end of the product number with “I” (example: R1QAA7209RBG-22I)
3. ODT stands for “on-die termination.”
QDR
™
-II+
4 Word Burst
HSTL interface
Latency 2.0, No ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.0, No ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.0, No ODT
QDR
™
-II+
4 Word Burst
HSTL interface
Latency 2.0, No ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.0, No ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.0, No ODT
QDR
™
-II+
4 Word Burst
HSTL interface
Latency 2.0, No ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.0, No ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.0, No ODT
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
450
400
450
400
450
400
533
500
450
533
500
450
533
500
450
533
500
450
533
500
450
533
500
450
R1QDA7209RBG-22RA0
R1QDA7209RBG-25RA0
R1QEA7209RBG-22RA0
R1QEA7209RBG-25RA0
R1QFA7209RBG-22RA0
R1QFA7209RBG-25RA0
R1QDA7218RBG-19RA0
R1QDA7218RBG-20RA0
R1QDA7218RBG-22RA0
R1QEA7218RBG-19RA0
R1QEA7218RBG-20RA0
R1QEA7218RBG-22RA0
R1QFA7218RBG-19RA0
R1QFA7218RBG-20RA0
R1QFA7218RBG-22RA0
R1QDA7236RBG-19RA0
R1QDA7236RBG-20RA0
R1QDA7236RBG-22RA0
R1QEA7236RBG-19RA0
R1QEA7236RBG-20RA0
R1QEA7236RBG-22RA0
R1QFA7236RBG-19RA0
R1QFA7236RBG-20RA0
R1QFA7236RBG-22RA0
8Mx9
4Mx18
2M x 36
72M
Notes
1. When ordering the lead-free version, replace the “A0” at the end of the product number with “B0” (example: R1QDA7209RBG-22RB0).
2. When ordering the wide operating temperature range version, replace the “R” at the end of the product number with “I” (example: R1QDA7209RBG-22I).
3. ODT stands for “on-die termination.”
QDR™-II+
4 Word Burst
HSTL interface
Latency 2.5, With ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.5, With ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.5, With ODT
QDR™-II+
4 Word Burst
HSTL interface
Latency 2.5, With ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.5, With ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.5, With ODT
QDR™-II+
4 Word Burst
HSTL interface
Latency 2.5, With ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.5, With ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.5, With ODT
1.5V typ. 0 to 701.7 to 1.9
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
BGA(165)
375
333
375
333
375
333
450
400
450
400
450
400
450
400
450
400
450
400
R1QKA7209RBG-27RA0
R1QKA7209RBG-30RA0
R1QLA7209RBG-27RA0
R1QLA7209RBG-30RA0
R1QMA7209RBG-27RA0
R1QMA7209RBG-30RA0
R1QKA7218RBG-22RA0
R1QKA7218RBG-25RA0
R1QLA7218RBG-22RA0
R1QLA7218RBG-25RA0
R1QMA7218RBG-22RA0
R1QMA7218RBG-25RA0
R1QKA7236RBG-22RA0
R1QKA7236RBG-25RA0
R1QLA7236RBG-22RA0
R1QLA7236RBG-25RA0
R1QMA7236RBG-22RA0
R1QMA7236RBG-25RA0
8Mx9
4Mx18
2M x 36
72M
Notes
1. When ordering the lead-free version, replace the “A0” at the end of the product number with “B0” (example: R1QAA7209RBG-22RB0).
2. When ordering the wide operating temperature range version, replace the “R” at the end of the product number with “I” (example: R1QAA7209RBG-22I).
3. ODT stands for “on-die termination.”
QDR™-II+
4 Word Burst
HSTL interface
Latency 2.0, With ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.0, With ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.0, With ODT
QDR™-II+
4 Word Burst
HSTL interface
Latency 2.0, With ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.0, With ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.0, With ODT
QDR™-II+
4 Word Burst
HSTL interface
Latency 2.0, With ODT
DDR-II+
2 Word Burst
HSTL interface
Latency 2.0, With ODT
DDR-II+
4 Word Burst
HSTL interface
Latency 2.0, With ODT
1.5V typ. 0 to 701.7 to 1.9
72MQDR™
-II+ SRAM Series (Latency 2.0, With ODT)
1.5V typ. 0 to 701.7 to 1.9
Memory
Density
(bit)
Configuration
(word x bit) Functions / Features
Package
Operating
Frequency (MHz)
Part No.
I/O Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
Power Supply
Voltage (V)
Memory
Density
(bit)
Configuration
(word x bit) Functions / Features
Package
Operating
Frequency (MHz)
Part No.
I/O Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
Power Supply
Voltage (V)
Memory
Density
(bit)
Configuration
(word x bit) Functions / Features
Package
Operating
Frequency (MHz)
Part No.
I/O Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
Power Supply
Voltage (V)
IC Function Tables
2019
Serial EEPROM
Industrial Grade
Serial EEPROM
Consumer Grade
IC Function Tables
SOP(8)W
SOP(8)
SOP(8)
SOP(8)
SOP(8)
TSSOP(14)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(14)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(8)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(14)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(14)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
5 1M
400k
5M/3M*1
Full size
Full size
Full size
Upper 1/8
Full size
Upper 1/8
Full size
Upper 1/4
Full size
Upper 1/4
Full size
Upper 1/2
Full size
Upper 1/2
Full size
Full size
Upper 1/4,
Upper 1/2,
Full size
5
256
128
64
64
32
32
16
16
16
16
128
64
64
32
32
32
32
16
16
HN58W241000FPIAG
R1EX24512ASAS0I
R1EX24512BSAS0I
R1EX24256ASAS0I
R1EX24256BSAS0I
R1EX24256ATBS0I
R1EX24256BTAS0I
R1EX24256ASA00I
R1EX24256BSA00I
R1EX24256ATB00I
R1EX24256BTA00I
R1EX24128ASAS0I
R1EX24128BSAS0I
R1EX24128ATAS0I
R1EX24128BTAS0I
R1EX24128ASA00I
R1EX24128BSA00I
R1EX24128ATA00I
R1EX24128BTA00I
R1EX24064ASAS0I
R1EX24064ATAS0I
R1EX24064ASA00I
R1EX24064ATA00I
R1EX24032ASAS0I
R1EX24032ATAS0I
R1EX24032ASA00I
R1EX24032ATA00I
R1EX24016ASAS0I
R1EX24016ATAS0I
R1EX24016ASA00I
R1EX24016ATA00I
R1EX24008ASAS0I
R1EX24008ATAS0I
R1EX24008ASA00I
R1EX24008ATA00I
R1EX24004ASAS0I
R1EX24004ATAS0I
R1EX24002ASAS0I
R1EX24002ATAS0I
R1EX25512ATA00I
HN58X25256FPIAG
R1EX25256ASA00I
HN58X25256TIAG
R1EX25256ATA00I
HN58X25128FPIAG
R1EX25128ASA00I
HN58X25128TIAG
R1EX25128ATA00I
R1EX25064ASA00I
R1EX25064ATA00I
R1EX25032ASA00I
R1EX25032ATA00I
R1EX25016ASA00I
R1EX25016ATA00I
R1EX25008ASA00I
R1EX25008ATA00I
R1EX25004ASA00I
R1EX25004ATA00I
R1EX25002ASA00I
R1EX25002ATA00I
I2C bus
SPI bus
1M
512K
256K
128K
64K
32K
16K
8K
4K
2K
512K
256K
128K
64K
32K
16K
8K
4K
2K
128Kx8
64Kx8
32Kx8
16Kx8
8K x 8
4K x 8
2K x 8
1K x 8
512 x 8
256 x 8
64Kx8
32Kx8
16Kx8
8Kx8
4Kx8
2K x 8
1Kx8
512x8
256x8
2.5 to 3.6
1.8 to 5.5
1.8 to 5.5 -40 to 85
-40 to 85
*1 Vcc=2.5 to 5.5V / 1.8 to 5.5V
★★ Under development
SOP(8)W
SOP(8)
SOP(8)
SOP(8)
SOP(8)
TSSOP(14)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(14)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(8)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(14)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(14)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
5 1M
400k
5M/3M*1
Full size
Full size
Full size
Upper 1/8
Full size
Upper 1/8
Full size
Upper 1/4
Full size
Upper 1/4
Full size
Upper 1/2
Full size
Upper 1/2
Full size
Full size
Upper 1/4,
Upper 1/2,
Full size
5
256
128
64
64
32
32
16
16
16
16
128
64
64
32
32
32
32
16
16
HN58W241000FPI
R1EX24512ASAS0A
R1EX24512BSAS0A
R1EX24256ASAS0A
R1EX24256BSAS0A
R1EX24256ATBS0A
R1EX24256BTAS0A
R1EX24256ASA00A
R1EX24256BSA00A
R1EX24256ATB00A
R1EX24256BTA00A
R1EX24128ASAS0A
R1EX24128BSAS0A
R1EX24128ATAS0A
R1EX24128BTAS0A
R1EX24128ASA00A
R1EX24128BSA00A
R1EX24128ATA00A
R1EX24128BTA00A
R1EX24064ASAS0A
R1EX24064ATAS0A
R1EX24064ASA00A
R1EX24064ATA00A
R1EX24032ASAS0A
R1EX24032ATAS0A
R1EX24032ASA00A
R1EX24032ATA00A
R1EX24016ASAS0A
R1EX24016ATAS0A
R1EX24016ASA00A
R1EX24016ATA00A
R1EX24008ASAS0A
R1EX24008ATAS0A
R1EX24008ASA00A
R1EX24008ATA00A
R1EX24004ASAS0A
R1EX24004ATAS0A
R1EX24002ASAS0A
R1EX24002ATAS0A
R1EX25512ATA00A
HN58X25256FPI
R1EX25256ASA00A
HN58X25256TI
R1EX25256ATA00A
HN58X25128FPI
R1EX25128ASA00A
HN58X25128TI
R1EX25128ATA00A
R1EX25064ASA00A
R1EX25064ATA00A
R1EX25032ASA00A
R1EX25032ATA00A
R1EX25016ASA00A
R1EX25016ATA00A
R1EX25008ASA00A
R1EX25008ATA00A
R1EX25004ASA00A
R1EX25004ATA00A
R1EX25002ASA00A
R1EX25002ATA00A
I2C bus
SPI bus
1M
512K
256K
128K
64K
32K
16K
8K
4K
2K
512K
256K
128K
64K
32K
16K
8K
4K
2K
128Kx8
64Kx8
32Kx8
16Kx8
8K x 8
4K x 8
2K x 8
1K x 8
512 x 8
256 x 8
64Kx8
32Kx8
16Kx8
8Kx8
4Kx8
2K x 8
1Kx8
512x8
256x8
2.5 to 3.6
1.8 to 5.5
1.8 to 5.5 -40 to 85
-40 to 85
*1 Vcc=2.5 to 5.5V / 1.8 to 5.5V
★★ Under development
IC Function Tables
Interface Write Cycle
Time (ms)
Operating
Frequency (Hz)
Write Protect
Area
Page Size
(Byte)
Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
PackagePart No.
Memory
Density
(bit)
Configuration
(word x bit) Interface Write Cycle
Time (ms)
Operating
Frequency (Hz)
Write Protect
Area
Page Size
(Byte)
Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
PackagePart No.
Memory
Density
(bit)
Configuration
(word x bit)
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
2221
Serial EEPROM
Industrial Grade
Serial EEPROM
Consumer Grade
IC Function Tables
SOP(8)W
SOP(8)
SOP(8)
SOP(8)
SOP(8)
TSSOP(14)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(14)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(8)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(14)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(14)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
5 1M
400k
5M/3M*1
Full size
Full size
Full size
Upper 1/8
Full size
Upper 1/8
Full size
Upper 1/4
Full size
Upper 1/4
Full size
Upper 1/2
Full size
Upper 1/2
Full size
Full size
Upper 1/4,
Upper 1/2,
Full size
5
256
128
64
64
32
32
16
16
16
16
128
64
64
32
32
32
32
16
16
HN58W241000FPIAG
R1EX24512ASAS0I
R1EX24512BSAS0I
R1EX24256ASAS0I
R1EX24256BSAS0I
R1EX24256ATBS0I
R1EX24256BTAS0I
R1EX24256ASA00I
R1EX24256BSA00I
R1EX24256ATB00I
R1EX24256BTA00I
R1EX24128ASAS0I
R1EX24128BSAS0I
R1EX24128ATAS0I
R1EX24128BTAS0I
R1EX24128ASA00I
R1EX24128BSA00I
R1EX24128ATA00I
R1EX24128BTA00I
R1EX24064ASAS0I
R1EX24064ATAS0I
R1EX24064ASA00I
R1EX24064ATA00I
R1EX24032ASAS0I
R1EX24032ATAS0I
R1EX24032ASA00I
R1EX24032ATA00I
R1EX24016ASAS0I
R1EX24016ATAS0I
R1EX24016ASA00I
R1EX24016ATA00I
R1EX24008ASAS0I
R1EX24008ATAS0I
R1EX24008ASA00I
R1EX24008ATA00I
R1EX24004ASAS0I
R1EX24004ATAS0I
R1EX24002ASAS0I
R1EX24002ATAS0I
R1EX25512ATA00I
HN58X25256FPIAG
R1EX25256ASA00I
HN58X25256TIAG
R1EX25256ATA00I
HN58X25128FPIAG
R1EX25128ASA00I
HN58X25128TIAG
R1EX25128ATA00I
R1EX25064ASA00I
R1EX25064ATA00I
R1EX25032ASA00I
R1EX25032ATA00I
R1EX25016ASA00I
R1EX25016ATA00I
R1EX25008ASA00I
R1EX25008ATA00I
R1EX25004ASA00I
R1EX25004ATA00I
R1EX25002ASA00I
R1EX25002ATA00I
I2C bus
SPI bus
1M
512K
256K
128K
64K
32K
16K
8K
4K
2K
512K
256K
128K
64K
32K
16K
8K
4K
2K
128Kx8
64Kx8
32Kx8
16Kx8
8K x 8
4K x 8
2K x 8
1K x 8
512 x 8
256 x 8
64Kx8
32Kx8
16Kx8
8Kx8
4Kx8
2K x 8
1Kx8
512x8
256x8
2.5 to 3.6
1.8 to 5.5
1.8 to 5.5 -40 to 85
-40 to 85
*1 Vcc=2.5 to 5.5V / 1.8 to 5.5V
★★ Under development
SOP(8)W
SOP(8)
SOP(8)
SOP(8)
SOP(8)
TSSOP(14)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(14)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(8)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(14)
TSSOP(8)
SOP(8)
SOP(8)
TSSOP(14)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
5 1M
400k
5M/3M*1
Full size
Full size
Full size
Upper 1/8
Full size
Upper 1/8
Full size
Upper 1/4
Full size
Upper 1/4
Full size
Upper 1/2
Full size
Upper 1/2
Full size
Full size
Upper 1/4,
Upper 1/2,
Full size
5
256
128
64
64
32
32
16
16
16
16
128
64
64
32
32
32
32
16
16
HN58W241000FPI
R1EX24512ASAS0A
R1EX24512BSAS0A
R1EX24256ASAS0A
R1EX24256BSAS0A
R1EX24256ATBS0A
R1EX24256BTAS0A
R1EX24256ASA00A
R1EX24256BSA00A
R1EX24256ATB00A
R1EX24256BTA00A
R1EX24128ASAS0A
R1EX24128BSAS0A
R1EX24128ATAS0A
R1EX24128BTAS0A
R1EX24128ASA00A
R1EX24128BSA00A
R1EX24128ATA00A
R1EX24128BTA00A
R1EX24064ASAS0A
R1EX24064ATAS0A
R1EX24064ASA00A
R1EX24064ATA00A
R1EX24032ASAS0A
R1EX24032ATAS0A
R1EX24032ASA00A
R1EX24032ATA00A
R1EX24016ASAS0A
R1EX24016ATAS0A
R1EX24016ASA00A
R1EX24016ATA00A
R1EX24008ASAS0A
R1EX24008ATAS0A
R1EX24008ASA00A
R1EX24008ATA00A
R1EX24004ASAS0A
R1EX24004ATAS0A
R1EX24002ASAS0A
R1EX24002ATAS0A
R1EX25512ATA00A
HN58X25256FPI
R1EX25256ASA00A
HN58X25256TI
R1EX25256ATA00A
HN58X25128FPI
R1EX25128ASA00A
HN58X25128TI
R1EX25128ATA00A
R1EX25064ASA00A
R1EX25064ATA00A
R1EX25032ASA00A
R1EX25032ATA00A
R1EX25016ASA00A
R1EX25016ATA00A
R1EX25008ASA00A
R1EX25008ATA00A
R1EX25004ASA00A
R1EX25004ATA00A
R1EX25002ASA00A
R1EX25002ATA00A
I2C bus
SPI bus
1M
512K
256K
128K
64K
32K
16K
8K
4K
2K
512K
256K
128K
64K
32K
16K
8K
4K
2K
128Kx8
64Kx8
32Kx8
16Kx8
8K x 8
4K x 8
2K x 8
1K x 8
512 x 8
256 x 8
64Kx8
32Kx8
16Kx8
8Kx8
4Kx8
2K x 8
1Kx8
512x8
256x8
2.5 to 3.6
1.8 to 5.5
1.8 to 5.5 -40 to 85
-40 to 85
*1 Vcc=2.5 to 5.5V / 1.8 to 5.5V
★★ Under development
IC Function Tables
Interface Write Cycle
Time (ms)
Operating
Frequency (Hz)
Write Protect
Area
Page Size
(Byte)
Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
PackagePart No.
Memory
Density
(bit)
Configuration
(word x bit) Interface Write Cycle
Time (ms)
Operating
Frequency (Hz)
Write Protect
Area
Page Size
(Byte)
Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
PackagePart No.
Memory
Density
(bit)
Configuration
(word x bit)
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
2221
Serial EEPROM
Automotive (Accessory) Grade
SOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
5 400k Full size
5 5M/3M*1 Upper 1/4,
Upper 1/2,
Full size
128
64
64
32
32
16
16
16
16
128
64
64
32
32
32
32
16
16
R1EX24512BSAS0P
R1EX24256BSAS0P
R1EX24256BTAS0P
R1EX24128BSAS0P
R1EX24128BTAS0P
R1EX24064ASAS0P
R1EX24064ATAS0P
R1EX24032ASAS0P
R1EX24032ATAS0P
R1EX24016ASAS0P
R1EX24016ATAS0P
R1EX24008ASAS0P
R1EX24008ATAS0P
R1EX24004ASAS0P
R1EX24004ATAS0P
R1EX24002ASAS0P
R1EX24002ATAS0P
R1EX25512ATA00P
R1EX25256ASA00P
R1EX25256ATA00P
R1EX25128ASA00P
R1EX25128ATA00P
R1EX25064ASA00P
R1EX25064ATA00P
R1EX25032ASA00P
R1EX25032ATA00P
R1EX25016ASA00P
R1EX25016ATA00P
R1EX25008ASA00P
R1EX25008ATA00P
R1EX25004ASA00P
R1EX25004ATA00P
R1EX25002ASA00P
R1EX25002ATA00P
I2C bus
SPI bus
512K
256K
128K
64K
32K
16K
8K
4K
2K
512K
256K
128K
64K
32K
16K
8K
4K
2K
1.8 to 5.5
1.8 to 5.5
-40 to 85
-40 to 85
*1 Vcc=2.5V to 5.5V / 1.8V to 5.5V ★★ : Under development
Parallel EEPROM
Memory
Density
(bit) Package
TSOP(32)
TSOP(32)
SOP(32)
TSOP(32)
TSOP(32)
TSOP(28)
TSOP(28)
SOP(28)
SOP(28)
DIP(28)
TSOP(28)
TSOP(28)
SOP(28)
SOP(28)
DIP(28)
DIP(28)
Write Cycle
Time (ms)
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Access Time
(ns)
250
150
120
85 / 100
120
85 / 100
120
85 / 100
85 / 100
70 / 100
70 / 100
70 / 100
70 / 100
70 / 100
70 / 100
Page Size
(Byte)
128
128
64
64
64
64
64
64
64
64
64
64
64
64
64
Part No.
HN58V1001T
HN58C1001T
HN58C1001FP
HN58V257AT
HN58C257AT
HN58V256AT
HN58C256AT
HN58V256AFP
HN58C256AFP
HN58C256AP
HN58V66AT
HN58V65AT
HN58V66AFP
HN58V65AFP
HN58V66AP
HN58V65AP
1M
256K
64K
Configuration
(word x bit)
128Kx8
32Kx8
8Kx8
Power Supply
Voltage (V)
2.7 to 5.5
4.5 to 5.5
2.7 to 5.5
4.5 to 5.5
2.7 to 5.5
4.5 to 5.5
2.7 to 5.5
4.5 to 5.5
4.5 to 5.5
2.7 to 5.5
2.7 to 5.5
2.7 to 5.5
2.7 to 5.5
2.7 to 5.5
2.7 to 5.5
Operating Ambient
Temperature (˚C)
0 to 70
0 to 70
-20 to 85
-40 to 85
0 to 70
-20 to 85
0 to 70
-20 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
0 to 70
-40 to 85
0 to 70
-20 to 85
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
-40 to 85
Functions/
Features
With reset function
With reset function
With reset function
With reset function
With reset function
With reset function
With reset function
All trademarks and registered trademarks are the property of their respective owners.
QDR and Quad Data Rate are trademarks of the QDR Consortium.
IC Function Tables
Interface Part No. Package Write Cycle
Time (ms)
Operating
Frequency (Hz)
Write Protect
Area
Page Size
(Byte)
Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
Memory
Density
(bit)
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
Design
Procurement
Manufacturing
Shipping
Environmental Considerations
for Renesas Electronics Products
Renesas Electronics is working actively to improve product environmental quality in all aspects of its
business operations, including product design, materials procurement, manufacturing, and shipping.
Development of environmentally compliant products through product
environmental assessment
Making products more resource and energy efficient (more compact, higher integration,
reduced power consumption, extended service life)
Reducing environmental load due to chemicals (management of chemical content of products)
Compliance with domestic and international product environmental
regulations
EU RoHS Directive, China RoHS, ELV Directive, REACH Regulation
Renesas Product Environmental Quality Management Sequence
Global environmental
preservation
Resource conservation /
Health effects
Regulations
RoHS Directive
WEEE Directive
ELV Directive
REACH Regulation
China RoHS etc.
Customers
Requirement to eliminate
restricted substances
Requirement to report chemical
substances content
Renesas Electronics
Requirement to eliminate
restricted substances
Requirement to report
chemical substances content
Suppliers
Development, design
Design of environmentally
compliant products
(development and design
operations)
Procurement
Green procurement
(materials procurement and
product environmental
management operations)
Conformance assessment
(quality assurance,
development, and design
operations)
Manufacturing
Production management
(manufacturing operations)
Shipment of environmentally
compliant products
Compliance with customer requirements
Transmission of information such as chemical content of products
RoHS : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment ELV : End of Life Vehicles
WEEE : Waste Electrical and Electronic Equipment REACH : Registration, Evaluation, Authorization and Restriction of Chemicals
Management of chemical substances
Prevention of inclusion or contamination by prohibited chemicals in
products (process management)
Reduction of CO2 emissions (reduction of PFC output and energy usage),
reduction of environmental load from chemicals used in manufacturing,
reduction of waste materials
Reduction of volume of packing materials
(expanding reuse of plastic packaging materials)
Reduction of energy consumption in transport
(improving overall efficiency of distribution)
Thoroughgoing green procurement activities
Investigation and confirmation of chemical content of procured
parts and materials
2423
Serial EEPROM
Automotive (Accessory) Grade
SOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
SOP(8)
TSSOP(8)
5 400k Full size
5 5M/3M*1 Upper 1/4,
Upper 1/2,
Full size
128
64
64
32
32
16
16
16
16
128
64
64
32
32
32
32
16
16
R1EX24512BSAS0P
R1EX24256BSAS0P
R1EX24256BTAS0P
R1EX24128BSAS0P
R1EX24128BTAS0P
R1EX24064ASAS0P
R1EX24064ATAS0P
R1EX24032ASAS0P
R1EX24032ATAS0P
R1EX24016ASAS0P
R1EX24016ATAS0P
R1EX24008ASAS0P
R1EX24008ATAS0P
R1EX24004ASAS0P
R1EX24004ATAS0P
R1EX24002ASAS0P
R1EX24002ATAS0P
R1EX25512ATA00P
R1EX25256ASA00P
R1EX25256ATA00P
R1EX25128ASA00P
R1EX25128ATA00P
R1EX25064ASA00P
R1EX25064ATA00P
R1EX25032ASA00P
R1EX25032ATA00P
R1EX25016ASA00P
R1EX25016ATA00P
R1EX25008ASA00P
R1EX25008ATA00P
R1EX25004ASA00P
R1EX25004ATA00P
R1EX25002ASA00P
R1EX25002ATA00P
I2C bus
SPI bus
512K
256K
128K
64K
32K
16K
8K
4K
2K
512K
256K
128K
64K
32K
16K
8K
4K
2K
1.8 to 5.5
1.8 to 5.5
-40 to 85
-40 to 85
*1 Vcc=2.5V to 5.5V / 1.8V to 5.5V ★★ : Under development
Parallel EEPROM
Memory
Density
(bit) Package
TSOP(32)
TSOP(32)
SOP(32)
TSOP(32)
TSOP(32)
TSOP(28)
TSOP(28)
SOP(28)
SOP(28)
DIP(28)
TSOP(28)
TSOP(28)
SOP(28)
SOP(28)
DIP(28)
DIP(28)
Write Cycle
Time (ms)
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Access Time
(ns)
250
150
120
85 / 100
120
85 / 100
120
85 / 100
85 / 100
70 / 100
70 / 100
70 / 100
70 / 100
70 / 100
70 / 100
Page Size
(Byte)
128
128
64
64
64
64
64
64
64
64
64
64
64
64
64
Part No.
HN58V1001T
HN58C1001T
HN58C1001FP
HN58V257AT
HN58C257AT
HN58V256AT
HN58C256AT
HN58V256AFP
HN58C256AFP
HN58C256AP
HN58V66AT
HN58V65AT
HN58V66AFP
HN58V65AFP
HN58V66AP
HN58V65AP
1M
256K
64K
Configuration
(word x bit)
128Kx8
32Kx8
8Kx8
Power Supply
Voltage (V)
2.7 to 5.5
4.5 to 5.5
2.7 to 5.5
4.5 to 5.5
2.7 to 5.5
4.5 to 5.5
2.7 to 5.5
4.5 to 5.5
4.5 to 5.5
2.7 to 5.5
2.7 to 5.5
2.7 to 5.5
2.7 to 5.5
2.7 to 5.5
2.7 to 5.5
Operating Ambient
Temperature (˚C)
0 to 70
0 to 70
-20 to 85
-40 to 85
0 to 70
-20 to 85
0 to 70
-20 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
0 to 70
-40 to 85
0 to 70
-20 to 85
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
0 to 70
-40 to 85
-40 to 85
Functions/
Features
With reset function
With reset function
With reset function
With reset function
With reset function
With reset function
With reset function
All trademarks and registered trademarks are the property of their respective owners.
QDR and Quad Data Rate are trademarks of the QDR Consortium.
IC Function Tables
Interface Part No. Package Write Cycle
Time (ms)
Operating
Frequency (Hz)
Write Protect
Area
Page Size
(Byte)
Power Supply
Voltage (V)
Operating Ambient
Temperature (˚C)
Memory
Density
(bit)
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
★★
Design
Procurement
Manufacturing
Shipping
Environmental Considerations
for Renesas Electronics Products
Renesas Electronics is working actively to improve product environmental quality in all aspects of its
business operations, including product design, materials procurement, manufacturing, and shipping.
Development of environmentally compliant products through product
environmental assessment
Making products more resource and energy efficient (more compact, higher integration,
reduced power consumption, extended service life)
Reducing environmental load due to chemicals (management of chemical content of products)
Compliance with domestic and international product environmental
regulations
EU RoHS Directive, China RoHS, ELV Directive, REACH Regulation
Renesas Product Environmental Quality Management Sequence
Global environmental
preservation
Resource conservation /
Health effects
Regulations
RoHS Directive
WEEE Directive
ELV Directive
REACH Regulation
China RoHS etc.
Customers
Requirement to eliminate
restricted substances
Requirement to report chemical
substances content
Renesas Electronics
Requirement to eliminate
restricted substances
Requirement to report
chemical substances content
Suppliers
Development, design
Design of environmentally
compliant products
(development and design
operations)
Procurement
Green procurement
(materials procurement and
product environmental
management operations)
Conformance assessment
(quality assurance,
development, and design
operations)
Manufacturing
Production management
(manufacturing operations)
Shipment of environmentally
compliant products
Compliance with customer requirements
Transmission of information such as chemical content of products
RoHS : Restriction of the use of certain Hazardous Substances in electrical and electronic equipment ELV : End of Life Vehicles
WEEE : Waste Electrical and Electronic Equipment REACH : Registration, Evaluation, Authorization and Restriction of Chemicals
Management of chemical substances
Prevention of inclusion or contamination by prohibited chemicals in
products (process management)
Reduction of CO2 emissions (reduction of PFC output and energy usage),
reduction of environmental load from chemicals used in manufacturing,
reduction of waste materials
Reduction of volume of packing materials
(expanding reuse of plastic packaging materials)
Reduction of energy consumption in transport
(improving overall efficiency of distribution)
Thoroughgoing green procurement activities
Investigation and confirmation of chemical content of procured
parts and materials
2423
MemoMemo
2625
MemoMemo
2625
R10CS0001EJ0100 www.renesas.com
2010.04
Renesas
General-Purpose Memory
Catalog
Renesas General-Purpose Memory
