SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 C 1200 V Tc = 25 C 455 A Tc = 80 C 319 A 300 A ICnom ICRM SEMiX(R) 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 ... 20 V 10 s -40 ... 150 C Tc = 25 C 394 A Tc = 80 C 272 A 300 A VGES tpsc VCC = 600 V VGE 20 V VCES 1200 V Tj = 125 C Tj Inverse diode IF SEMiX452GAL126HDs Tj = 150 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 IFRM IFRM = 2xIFnom 600 A IFSM tp = 10 ms, sin 180, Tj = 25 C 1900 A -40 ... 150 C Tc = 25 C 373 A Tc = 80 C 258 A 300 A Tj Freewheeling diode IF Tj = 150 C IFnom Typical Applications* IFRM IFRM = 2xIFnom 600 A * AC inverter drives * UPS * Electronic Welding IFSM tp = 10 ms, sin 180, Tj = 25 C 1900 A -40 ... 150 C Tj Module Remarks * Case temperatur limited to TC=125C max. * Not for new design It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 C 1.7 2.1 V Tj = 125 C 2 2.45 V Tj = 25 C 1 1.2 V Tj = 125 C 0.9 1.1 V Tj = 25 C 2.3 3.0 m IGBT VCE(sat) IC = 300 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V Tj = 125 C VGE(th) VGE=VCE, IC = 12 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 25 C 5 3.7 4.5 m 5.8 6.5 V 0.1 0.3 mA Tj = 125 C mA f = 1 MHz 21.5 nF f = 1 MHz 1.13 nF f = 1 MHz 0.98 nF QG VGE = - 8 V...+ 15 V 2400 nC RGint Tj = 25 C 2.50 GAL (c) by SEMIKRON Rev. 0 - 16.04.2010 http://store.iiic.cc/ 1 SEMiX452GAL126HDs Characteristics Symbol Conditions td(on) VCC = 600 V IC = 300 A Tj = 125 C 280 Tj = 125 C 65 ns RG on = 2 RG off = 2 Tj = 125 C 35 mJ tr Eon Trench IGBT Modules SEMiX452GAL126HDs * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Typical Applications* * AC inverter drives * UPS * Electronic Welding Unit ns 630 ns Tj = 125 C 130 ns Eoff Tj = 125 C 45 mJ Rth(j-c) per IGBT Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 rF Qrr Err Rth(j-c) rF IRRM Qrr Err Rth(j-c) 0.083 K/W Tj = 25 C 1.6 1.80 V Tj = 125 C 1.6 1.8 V V Tj = 25 C 0.9 1 1.1 Tj = 125 C 0.7 0.8 0.9 V Tj = 25 C 1.7 2.0 2.3 m 2.3 2.7 3.0 m Tj = 125 C IF = 300 A Tj = 125 C di/dtoff = 6200 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 300 A VGE = 0 V chip VF0 Remarks * Case temperatur limited to TC=125C max. * Not for new design max. Tj = 125 C IRRM Features typ. tf td(off) SEMiX(R) 2s min. 375 A 75 C 33 mJ 0.15 K/W Tj = 25 C 1.7 1.9 V Tj = 125 C 1.7 1.9 V V Tj = 25 C 0.9 1 1.1 Tj = 125 C 0.7 0.8 0.9 V Tj = 25 C 1.9 2.3 2.7 m 3.1 3.5 m Tj = 125 C IF = 300 A Tj = 125 C di/dtoff = 6200 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 600 V per diode 2.7 375 A 75 C 33 mJ 0.15 K/W Module LCE RCC'+EE' 18 res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) TC = 25 C 0.7 m TC = 125 C 1 m 0.045 to terminals (M6) Mt nH K/W 3 5 Nm 2.5 5 Nm Nm w 250 g Temperatur Sensor R100 Tc=100C (R25=5 k) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2% K GAL 2 Rev. 0 - 16.04.2010 http://store.iiic.cc/ (c) by SEMIKRON SEMiX452GAL126HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 0 - 16.04.2010 http://store.iiic.cc/ 3 SEMiX452GAL126HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 - 16.04.2010 http://store.iiic.cc/ (c) by SEMIKRON SEMiX452GAL126HDs SEMiX 2s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. (c) by SEMIKRON Rev. 0 - 16.04.2010 http://store.iiic.cc/ 5