APTGF90TA60PG
APTGF90TA60PG – Rev 1 July, 2006
www.microsemi.com 1 - 6
Applicatio
n
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
• Outsta ndi ng perfor mance at hi gh frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a
full bridge
• RoHS compliant
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
VBUS1 VBUS2 VBUS3
W
E6
0/VB US3
V
G6
E5
0/VB US1
G2
E1
E2
0/VB US2
U
E3
E4
G4
G1 G3 G5
G5
G6
E6
E5
G3
VBUS 2 VBUS 3
G4
E4
WV
E3 0/VBUS 3
0/VBUS 2
G1
VBUS 1
U
E2
G2
0/VBUS 1 E1
S
ymbol Parameter Ma
x
ratings Unit
VCES Collector - Emitter Breakdown Voltage 600 V
Tc = 25°C 110
IC Continuous Collector Current Tc = 80°C 90
ICM Pulsed Collector Current Tc = 25°C 315
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation Tc = 25°C 416 W
RBSOA Reverse Bias Safe Operating Area Tj = 150°C 200A @ 600V
VCES = 600V
IC = 90A @ Tc = 80°C
Triple phase leg
NPT IGBT Power Module
APTGF90TA60PG
APTGF90TA60PG – Rev 1 July, 2006
www.microsemi.com 2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 250
ICES Zero Gate Voltage Collector Current VGE = 0V
VCE = 600V Tj = 125°C 500 µA
Tj = 25°C 2.0 2.5
VCE(sat) Collector Emitter saturation Voltage VGE =15V
IC = 90A Tj = 125°C 2.2 V
VGE(th) Gate Threshold Voltage VGE = VCE, IC = 1mA 3 5 V
IGES Gate – Emitter Leakage Current VGE = 20 V, VCE = 0V ±150 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 4300
Coes Output Capacitance 470
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 400
pF
Qg Total gate Charge 330
Qge Gate – Emitter Charge 290
Qgc Gate – Collector Charge
VGE = 15V
VBus = 300V
IC = 90A 200
nC
Td(on) Tur n-on Delay Ti me 26
Tr Rise Time 25
Td(off) Turn-off Delay Time 150
Tf Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5 Ω 30
ns
Td(on) Tur n-on Delay Ti me 26
Tr Rise Time 25
Td(off) Turn-off Delay Time 170
Tf Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5 Ω 40
ns
Eon Tur n-on Switchi ng Energy Tj = 125°C 4.3
Eoff Turn-off Switching Energy
VGE = 15V
VBus = 400V
IC = 90A
RG = 5 Ω Tj = 125°C 3.5
mJ
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 500 µA
IF DC Forward Current Tc = 70°C 60 A
IF = 60A 1.6 1.8
IF = 120A 1.9 VF Diode Forward Voltage
IF = 60A Tj = 125°C 1.4
V
Tj = 25°C 130
trr Reverse Recovery Time
Tj = 125°C 170
ns
Tj = 25°C 220
Qrr Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt =200A/µs
Tj = 125°C 920 nC
APTGF90TA60PG
APTGF90TA60PG – Rev 1 July, 2006
www.microsemi.com 3 - 6
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.3
RthJC Junction to Case Thermal Resistance Diode 0.9
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M6 3 5 N.m
Wt Package Weight 250 g
SP6-P Package outline (dimensions in mm)
5 places (3:1)
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
APTGF90TA60PG
APTGF90TA60PG – Rev 1 July, 2006
www.microsemi.com 4 - 6
Typical Performance Curve
Output characteristics (VGE=15V)
TJ=-55°C
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
350
01234
Ic, Collector Current (A)
VCE, Collecto r to Emitte r Volt age (V)
250µs Pulse Test
< 0.5% Dut
y
c
y
cle
Output Characteristics (VGE=10V)
TJ=-55 °C
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
01234
Ic, Collector Current (A)
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% D uty cycle
Transfer Characteristics
TJ=-55°C
TJ=-55°C
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
012345678910
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% D uty cycle
Ic=180A
Ic=90A
Ic=45A
0
1
2
3
4
5
6
7
8
6 8 10 12 14 16
VGE, Gate to Emitter Voltage (V)
VCE
, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 25°C
250µs Pulse Test
< 0.5% D uty cycle Ic=180A
Ic=90A
Ic=45A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
VCE, Collecto r to Emitte r Volt age (V)
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% D uty cycle
VGE = 15V
0.70
0.80
0.90
1.00
1.10
1.20
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
Collector to Emitter Breakdown
Voltage (Normalized)
Breakdown Voltage vs Junction Temp.
0
20
40
60
80
100
120
140
-50-250 255075100125150
TC, Case Temperature (°C)
Ic, DC Collector Current (A)
DC Collector Current vs Case Temperature
Gate Charge
VCE=120V
VCE=300V
VCE =480V
0
2
4
6
8
10
12
14
16
18
0 50 100 150 200 250 300 350
Gate Charge (nC)
V
GE, Gate to Emitter Voltage (V)
IC = 90A
TJ = 25°C
APTGF90TA60PG
APTGF90TA60PG – Rev 1 July, 2006
www.microsemi.com 5 - 6
VGE
= 1 5V
15
20
25
30
35
25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
Tj = 25°C
VCE = 400V
RG = 5ΩVGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
50
100
150
200
250
25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
td(off), Turn-Off Delay Time (ns)
Turn-Off Delay Time vs Collector Current
VCE = 400V
RG = 5Ω
VGE=15V,
TJ=125°C
0
20
40
60
80
25 50 75 100 125 150
ICE, Collector to Emitter Curr ent (A)
tr, Rise Time (ns)
Current Rise Time vs Collector Current
VCE = 400V
RG = 5Ω
TJ = 25°C
TJ = 125°C
0
20
40
60
80
25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
tf, Fall Time (ns)
Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 5Ω
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
2
4
6
8
0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
Eon, Turn-On Energy Loss (mJ)
Turn-On Energy Loss vs Collector Curren
t
VCE = 400V
RG = 5Ω
TJ = 25°C
TJ = 125°C
0
1
2
3
4
5
6
0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
Eoff, Turn-off Energy Loss (mJ)
Turn-Off Energy Loss vs Collector Current
VCE = 400V
VGE = 15V
RG = 5Ω
Eon, 180A
Eoff, 180A
Eon, 90A
Eoff, 90A
Eon, 45A
Eoff, 45A
0
4
8
12
16
0 1020304050
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
Switching Energy Losses (mJ)
VCE = 400V
VGE = 15V
TJ= 125°C
Eon, 180A
Eoff, 180A
Eon, 9 0A
Eoff, 90A
Eon, 45A
Eoff, 45A
0
2
4
6
8
10
0 255075100125
TJ, Junction Temperature (°C)
Switching Energy Losses (mJ)
Switching Energy Losses vs Junction Temp.
VCE = 400V
VGE = 15V
RG = 5Ω
APTGF90TA60PG
APTGF90TA60PG – Rev 1 July, 2006
www.microsemi.com 6 - 6
Cies
Cres
Coes
100
1000
10000
0 1020304050
C, Capacitance (pF)
Capacitance vs Collector to Emitter Voltage
VCE, Collector to Emitter Voltage (V)
0
50
100
150
200
250
0 200 400 600 800
IC, Collector Current (A)
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Operating Frequency vs Collector Current
Hard
switching
ZCS
ZVS
0
40
80
120
160
200
20 40 60 80 100 120
IC, Collector Curr ent (A)
Fmax, Operating Frequency (kHz)
VCE = 400V
D = 50%
RG = 5Ω
TJ = 125°C
TC = 75°C
M icrose mi re se rve s the rig ht to c ha nge , witho ut notice , t he s pe cificatio ns and i nfo rmatio n co nta ine d he re in
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
