MS1511.PDF 09-12-02
MS1511
DESCRIPTION:DESCRIPTION:
The MS1511 is a 28 V Class C epitaxial silicon NPN planar
transistor designed primarily for UHF communications.
This device utilizes diffused emitter resistors to achieve
VSWR of 10:1 under operating conditions, and is internally
input matched to optimize power gain and efficiency over
the 225 – 400 MHz band.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 4.0 V
ICDevice Current 8.0 A
PDISS Power Dissipation 220 W
TJJunction Temperature +200 °°C
TSTG Storage Temperature -65 to +150 °°C
Thermal DataThermal Data
RTH(J-C) Thermal Resistance Junction-case 1.25 °°C/W
FeaturesFeatures
• 400 MHz
• 28 VOLTS
• POUT = 70 WATTS
• GP = 8.4 dB GAIN MINIMUM
• EFFICIENCY 60%
• GOLD METALLIZATION
• COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
UHF COMMUNICATIONS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1511.PDF 09-12-02
MS1511
ELECTRICAL SPECIFICATIONS (Tcase = 25 ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATICSTATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCBO IC = 50 mA IE = 0mA 60 --- --- V
BVCEO IE = 50 mA IB = 0 mA 30 --- --- V
BVEBO IC = 10 mA IC = 0mA 4.0 --- --- V
ICBO VCB = 30 V IE = 0 mA --- --- 5mA
HFE VCE = 5 V IC = 2 A 20 --- 80 ---
DYNAMICDYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT f = 400 MHz PIN = 10 W VCE = 28 V 70 --- --- W
GPf = 400 MHz PIN = 10 W VCE = 28 V 8.4 --- --- dB
COB f = 1 MHz VCB = 28 V --- --- 80 pF
IMPEDANCE DATAIMPEDANCE DATA
FREQ ZIN(Ω)Ω) ZCL(Ω)Ω)
225 MHz 1.44 - j0.87 1.70 - j2.6
400 MHz 1.29 + j0.87 3.0 + j0.87
PIN = 10W
VCC = 28V
MS1511.PDF 09-12-02
MS1511
PACKAGE MECHANICAL DATA PACKAGE MECHANICAL DATA
