AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19125E is a 125 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
personal communication service (PCS)
(1930 MHz—1990 MHz), time-division multiple
access (TDMA), and single-carrier or multicarrier
class AB power amplifier applications.
Figure 1. Available Packages
Features
Typical 2 carrier, N-CDMA performance for
VDD = 28 V, IDQ = 1250 mA, F1 = 1958.75 MHz,
F2 = 1961.25 MHz, IS-95 (pilot, paging, sync,
traffic channels 8—13) 1.2288 MHz channel
bandwidth (BW). Adjacent channels measured
over a 30 kHz BW at F1 – 0.885 MHz and
F2 + 0.885 MHz. Intermodulation distortion
products measured over a 1.2288 MHz BW at
F1 – 2.5 MHz and F2 + 2.5 MHz. Peak/Average
(P/A) = 9.72 dB at 0.01% probability on CCDF:
— Output power: 24 W.
— Power gain: 15 dB.
— Efficiency: 24%.
— ACPR: –48 dBc.
— IMD3: –34 dBc.
— Return loss: –10 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1960 MHz, 125 W contin-
uous wave (CW) output power.
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR19125EU (unflanged) AGR19125EF (flanged)
Parameter Sym Value Unit
Thermal Resistance,
Junction to Case:
AGR19125EU
AGR19125EF
RıJC
RıJC
0.5
0.5
°C /W
°C /W
Parameter Sym Value Unit
Drain-source Voltage VDSS 65 Vdc
Gate-source Voltage VGS –0.5, +15 Vdc
Total Dissipation at TC= 25 °C:
AGR19125EU
AGR19125EF
PD
PD
350
350
W
W
Derate Above 25 °C:
AGR19125EU
AGR19125EF
—
—
2.0
2.0
W/°C
W/°C
Operating Junction Tempera-
ture
TJ200 °C
Storage Temperature Range TSTG –65, +150 °C
AGR19125E Minimum (V) Class
HBM 500 1B
MM 50 A
CDM 1500 4
PEAK Devices
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
E52191RGA
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
* IS-95 N-CDMA P/A = 9.72 dB at 0.01% CCDF, f1 = 1958.75 MHz, and f2 = 1961.25 MHz.
VDD = 28 Vdc, IDQ = 1250 mA, and POUT = 24 W avg.
t inUxaMpyTniMlobmySr e t ema r a P
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0, ID= 200 µA) V(BR)DSS 65 — — Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) IGSS — — 4 µAdc
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) IDSS — — 12 µAdc
On Characteristics
Forward Transconductance (VDS = 10 V, ID= 1 A) GFS —9— S
Gate Threshold Voltage (VDS = 10 V, ID= 400 µA) VGS(TH) — — 4.8 Vdc
Gate Quiescent Voltage (VDS = 28 V, ID= 1200 mA) VGS(Q) — 3.8 — Vdc
Drain-source On-voltage (VGS = 1 0 V, IDV) A1 = DS(ON) — 0.08 — Vdc
t inUxaMpyTniMlobmySr e t ema r a P
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
CRSS — 3.0 — pF
Functional Tests (in Agere Systems Supplied Test Fixture)
G*n i aG rewoP re i f i l pmA ecruos-nommoC PS 14 15 — dB
Drain Efficiency* η— 24 — %
Third-order Intermodulation Distortion*
(IMD3 measured over 1.2288 MHz BW @ f1 – 2.5 MHz
and f2 + 2.5 MHz)
IM3 — –34 — dBc
Adjacent Channel Power Ratio*
(ACPR measured over BW of 30 kHz @ f1 – 0.885 MHz
and f2 + 0.885 MHz)
ACPR — –48 — dBc
B d — 0 1 – — L R I* s soL n r u t eR t upn I
Power Output, 1 dB Compression Point
(VDD = 28 V, fC= 1960.0 MHz)
P1dB — 125 — W
Output Mismatch Stress
(VDD = 28 V, POUT = 125 W (CW), IDQ = 1250 mA, fC= 1960.0 MHz
VSWR = 10:1; [all phase angles])
ψNo degradation in output power.
400
200
(in Supplied Test Fixture)
E52191RGA
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Test Circuit Illustrations for AGR19125E
A. Schematic
B. Component Layout
Figure 2. AGR19125E Test Circuit
Parts List:
?Microstrip Line:
Z1 0.785 in. x 0.065 in.
Z2 0.205 in. x 0.065 in.
Z3 0.070 in. x 0.255 in.
Z4 0.378 in. x 0.065 in.
Z5 0.177 in. x 0.860 in.
Z6 0.050 in. x 0.247 in.
Z7 0.050 in. x 0.593 in.
Z8 0.500 in. x 1.030 in.
Z9 0.323 in. x 0.185 in.
Z10 0.465 in. x 0.115 in.
Z11 0.075 in. x 0.065 in.
Z12 0.252 in. x 0.065 in.
?ATC ® chip capacitor:
C1 10 pF 100B100JW500X
C5, C14, C15: 5.6 pF100B5R6BW500X
C9 6.8 pF 100B6R8JW500X
C10 1.2 pF 100B1R2BW500X
C16: 15 pF 100B150JW500X.
?Sprague®tantalum surface-mount chip capacitor:
C2, C4, C11, C12: 22 µF, 35 V.
?Kemet® 1206 size chip capacitor:
C6, C13: 0.1 µF C1206104K5RAC7800.
?Murata® 0805 size chip capacitor:
C8 0.01 µF GRM40X7R103K100AL.
?Johanson Giga-Trim®variable capacitor:
C17 0.6 pF to 4.5 pF 27271SL.
?1206 size chip capacitor: C3, C7: 22000 pF.
?1206 size chip resistor: R1 1 kΩ; R2 560 kΩ; R3 4.7 Ω.
?Fair-Rite®ferrite bead: FB1 2743019447.
?Taconic® ORCER RF-35: board material, 1 oz. cop-
per, 30 mil thickness, εr = 3.5.
DUT
R3
C2
R2
R1
+
C3 C4
+
C5
FB1
Z6
Z1 C1 Z2 Z3 Z4 Z5
Z8 Z9 Z10 Z13
6C 7C 8C 9C
Z7 C131 1C 2 1C
+
C10 C14
RF INPUT
VGG
VDD
RF
C16
C15
OUTPUT
+
1
2
3
PINS:
1. DRAIN
2. GAT E
3. SOURCE
Z11
C17
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
E52191RGA
Typical Performance Characteristics
Figure 3. Series Equivalent Input and Output Impedances
MHz (f ) ZSΩ
(Complex Source Impedance)
ZLΩ
(Complex Optimum Load Impedance)
24.1j – 36.131.6j – 22.4) 1 f ( 0391
91.1j – 06.108.5j – 20.4) 2 f ( 0691
81.1j – 47.155.5j – 19.3) 3 f ( 0991
0.1
0.1
0.1
0.2
0.2
0.3
0.3
0.4
0.4
0.5
0.5
0.6
0.6
0.7
0.7
0.8
0.8
0.9
0.9
1.0 1.0
1.2
1.2
1.4
1.4
1.6
1.6
1.8
1.8
2.0
2.0
3.0
3.0
4.0
4.0
5.0
5.0
10
10
10
20
20
20
50
50
50
0.2
0.2
0.2
0.4
0.4
0.4
0.6
0.6
0.6
0.8
0
.8
0.8
1.0
1.0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180
±
90-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
0.21
0.22
0.23
0.23
0.24
0.24
0.25
0.25
0.26
0.26
0.27
0.27
0.28
0.29
0.3
0.31
0.32
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.42
0.43
0.44
0.45
0.46
0.47
0.48
0.48
0.49
0.49
0.0
0.0
A
N
G
L
E
O
F
T
R
A
N
S
M
I
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(
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X
/
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)
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S
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S
C
E
P
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(
-
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B
/
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o
)
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
F
ZL
f3
f1
ZS
f3
f1
Z0 = 10 Ω
DUT
ZSZL
INPUT MATCH OUTPUT MATCH
DRAIN (1)
SOURCE (3)
GATE (2)
E52191RGA
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 V, IDQ = 1250 mA, F = 1960 MHz.
Figure 4. Output Power and Efficiency vs. Input Power
TEST CONDITIONS:
VDD = 28 V, F = 1960 MHz, CW MEASUREMENT.
Figure 5. Power Gain vs. Output Power
0.0
20.0
40.0
60.0
80.0
100.0
120.0
140.0
0.00 1.00 2.00 3.00 4.00 5.00 6.00
P
IN
, INPUT POWER (W)S
P
OUT
, OUTPUT POWER (W),
EFFICIENCY (%)S
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
IRL, INPUT RETURN LOSS
(dB)S
P
OUT
EFFICIENCY
IRL
12.00
13.00
14.00
15.00
16.00
1.00 10.00 100.00 1000.00
P
OUT
, OUTPUT POWER (W)S
Gps, POWER GAIN (dB)S
I
DQ
= 1500 mA
I
DQ
= 900 mA
I
DQ
= 1250 mA
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
E52191RGA
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 V, F = 1960 MHz, 100 kHz TONE SPACING.
Figure 6. Two-Tone Gain vs. Output Power
TEST CONDITIONS:
VDD = 28 V, IDQ = 1250 mA, POUT = 125 W (PEP), 100 kHz TONE SPACING.
Figure 7. Two-Tone Broadband Performance
12
13
14
15
16
10 100 1000
P
OUT
, OUTPUT POWER (W) PEPS
Gps, POWER GAIN (dB)S
I
DQ
= 900 mA
I
DQ
= 1250 mA
I
DQ
= 1500 mA
0
5
10
15
20
25
30
35
40
45
1880 1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)S
Gps, POWER GAIN (dB), DRAINS
EFFICIENCY (%)S
EFFICIENCY
IRL
Gps
IMD 3
E52191RGA
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 V, F = 1960 MHz, IDQ = 1250 mA, POUT = 125 W (PEP).
Figure 8. Two-Tone Intermodulation Products vs. Tone Spacing
TEST CONDITIONS:
F = 1960 MHz, IDQ = 1250 mA, POUT = 125 W (PEP), 100 kHz TONE SPACING.
Figure 9. Two-Tone Intermodulation Distortion and Efficiency vs. Drain Supply
-55
-45
-35
-25
100 1000 10000 10000
0
TONE SPACING (kHz)S
IMD, INTERMODULATION DISTORTION (dBc)S
IMD 7
IMD 5
IMD 3
36
37
38
39
40
41
42
43
44
24 25 26 27 28 29 30
V
DD
, DRAIN SUPPLY (V)S
DRAIN EFFICIENCY (%)S
-35
-30
-25
-20
-15
-10
-5
0
5
IMD3, INTERMODULATIONS
DISTORTION (dBc)S
EFFICIENCY
IMD 3
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
E52191RGA
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 V, F = 1960 MHz, 100 kHz TONE SPACING.
Figure 10. Third Order Intermodulation Distortion vs. Output Power
TEST CONDITIONS:
VDD = 28 V, IDQ = 1250 mA, F = 1960 MHz, 100 kHz TONE SPACING.
Figure 11. Intermodulation Distortion Products vs. Output Power
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
10 100 1000
POUT, OUTPUT POWER (W) PEPS
IMD3, THIRD ORDER INTERMODULATIONS
DISTORTION (dBc)S
IDQ = 900 m A
IDQ = 1250 m A
IDQ = 1500 m A
-80.0
-70.0
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
1.00 10.00 100.00 1000.00
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)S
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
DRAIN EFFICIENCY (%)S
EFFICIENCY
3rd ORDER
5th ORDER
7th ORDER
E52191RGA
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 V, IDQ = 1250 mA, F1 = 1960 MHz, F2 = 1962.5 MHz.
9 IS-95 CHANNELS/CARRIER, P/A RATIO = 9.72 dB AT 0.01% PROBABILITY.
Figure 12. Two Carrier IS-95 CDMA Performance vs. Output Power
TEST CONDITIONS:
VDD = 28 V, IDQ = 1250 mA, POUT = 24 W, 2 CARRIERS.
2.5 MHz SPACING, P/A RATIO = 9.72 dB AT 0.01%.
Figure 13. Two Carrier CDMA (IS-95) Broadband Performance
0.00
5.00
10.00
15.00
20.00
25.00
30.00
35.00
40.00
1.00 10.00 100.00
POUT, OUTPUT POWER ( W) S
Gps, POWER GAIN (dB)
DRAINSEFFICIENCY (%)S
-70.0
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
IMD3 (dBc), ACPR (dBc)S
EFFICIENCY
IMD3
Gps
ACPR
0
5
10
15
20
25
30
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)S
Gps, POWER GAIN (dB), DRAINS
EFFICIENCY (%)S
-55
-45
-35
-25
-15
-5
5
IRL, INPUT RETURN LOSS (dB),
IMD3,S INTERMODULATION
DISTORTION, AND ACPR (dBc)S
EFFICIENCY
IRL
Gps
IMD3
ACPR
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
E52191RGA
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified. Cut lead indicates drain.
AGR19125EU
AGR19125EF
PINS:
1. DRAIN
2. GATE
3. SOURCE
PINS:
1. DRAIN
2. GATE
3. SOURCE
PEAK DEVICES
AGR19125EU
XXXX
1
2
31
2
3
1
3
2
PEAK DEVICES
AGR19125EF
XXXX
1
2
3
XXXX - 4 Digit Trace Code