2002. 9. 17 1/4
SEMICONDUCTOR
TECHNICAL DATA 2N2906E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: ICEX=-50nA(Max.), IBL=-50nA(Max.)
@VCE=-30V, VEB=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.
Low Collector Output Capacitance
: Cob=4.5pF(Max.) @VCB=5V.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
A1
B1
C
TES6
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A1
C
C
J
H
1
2
3
6
4
PPP5
5
+
_
+
_
+
_
+
_
+
_
+
_
+
_
1. Q EMITTER
2. Q BASE
3. Q BASE
4. Q COLLECTOR
5. Q EMITTER
6. Q COLLECTOR
1
1
1
2
2
2
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC-200 mA
Base Current IB-50 mA
Collector Power Dissipation PC200 mW
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
* Total Rating
1
Q1
23
65 4
Q2
Type Name
Marking
Z A
EQUIVALENT CIRCUIT (TOP VIEW)
2002. 9. 17 2/4Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEX VCE=-30V, VEB=-3V - - -50 nA
Base Cut-off Current IBL VCE=-30V, VEB=-3V - - -50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 -40 - - V
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-1mA, IB=0 -40 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5.0 - - V
DC Current Gain *
hFE(1) VCE=-1V, IC=-0.1mA 60 - -
hFE(2) VCE=-1V, IC=-1mA 80 - -
hFE(3) VCE=-1V, IC=-10mA 100 - 300
hFE(4) VCE=-1V, IC=-50mA 60 - -
hFE(5) VCE=-1V, IC=-100mA 30 - -
Collector-Emitter Saturation Voltage * VCE(sat)1 IC=-10mA, IB=-1mA - - -0.25 V
VCE(sat)2 IC=-50mA, IB=-5mA - - -0.4
Base-Emitter Saturation Voltage * VBE(sat)1 IC=-10mA, IB=-1mA -0.65 --0.85 V
VBE(sat)2 IC=-50mA, IB=-5mA - - -0.95
Transition Frequency fTVCE=-20V, IC=-10mA, f=100MHz 250 - - MHz
Collector Output Capacitance Cob VCB=-5V, IE=0, f=1MHz - - 4.5 pF
Input Capacitance Cib VBE=-0.5V, IC=0, f=1MHz - - 10 pF
Input Impedance hie
VCE=-10V, IC=-1mA, f=1kHz
2.0 - 12 k
Voltage Feedback Ratio hre 1.0 - 10 x10-4
Small-Signal Current Gain hfe 100 - 400
Collector Output Admittance hoe 3.0 - 60
Noise Figure NF VCE=-5V, IC=-0.1mA,
Rg=1k , f=10Hz 15.7kHz - - 4.0 dB
Switching Time
Delay Time td
Vout
Total 4pF
C
10kΩ
275Ω
V =-3.0V
CC
300ns
-10.6V
0.5V 0
t ,t < 1ns, Du=2%
r
in
V
f
- - 35
nS
Rise Time tr- - 35
Storage Time tstg
20µs
1N916
or equiv.
-10.9V
9.1V
Vout
Total 4pF
C
V =-3.0V
CC
275Ω
10kΩ
Vin
0
t ,t < 1ns, Du=2%
rf
- - 225
Fall Time tf- - 75
2N2906E
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
2002. 9. 17 3/4
2N2906E
Revision No : 0
C
0
COLLECTOR CURRENT I (mA)
COLLECTOR CURRENT I (mA)
0
C
0
BASE-EMITTER VOLTAGE V (V)
BE
BEC
I - V
10
DC CURRENT GAIN hFE
-3-1-0.3-0.1
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CEC
I - V h - I
C
COLLECTOR CURRENT I (mA)
COLLECTOR-EMITTER SATURATION
CE(sat)
V - I
BASE-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
C
BE(sat)
V - I
-1 -2 -3 -4
-20
-40
-60
-80
-100
COMMON EMITTER
Ta=25 C
I =-0.1mA
B
-0.4 -0.8 -1.2 -1.6
-40
-80
-120
-160
-200
COMMON EMITTER
V =-1V
CE
FE C
-10 -30 -100 -300
30
50
100
300
500
1k COMMON EMITTER
V =-1V
CE
Ta=125 C
Ta=25 C
Ta=-55 C
CE(sat) C
VOLTAGE V (V)
COMMON EMITTER
-0.01
-0.1 -0.3 -1
-0.1
-0.03
-0.05
-0.3
-0.5
-1
-3 -10 -30 -100
I /I =10
C
-300
B
Ta=125 C
Ta=25 C
Ta=-55 C
BE(sat) C
VOLTAGE V (V)
-3
Ta=125 C
-0.3
-0.1
-0.1
-1
-0.5
-0.3 -1 -3 -10
Ta=25 C
Ta=-55 C
-30 -100 -300
COMMON EMITTER
I /I =10
-5
-10
C E
-0.8
-0.9
-1
-0.3
-0.2
-0.7
-0.6
-0.5
-0.4
Ta=55 C
Ta=25 C
Ta=125 C
V - I
B
BASE CURRENT I (mA)
-0.001 -0.1 -1 -10
CE
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE B
-0.2
-0.4
-0.6
-0.8
-1.0
-0.01
COMMON
EMITTER
Ta=25 C
I =1mA
C
I =10mA
C
C
I =30mA
C
I =100mA
2002. 9. 17 4/4
2N2906E
Revision No : 0
CAPACITANCE C (pF)
ob
-3-1-0.3-0.1
REVERSE VOLTAGE V (V)
CB
C - V , C - V
ob CB ib EB
C (pF)
ib
V (V)
EB
-10 -30
0.5
1
3
5
10
30
50
f=1MHz
Ta=25 C
C
C
ib
ob
COLLECTOR POWER DISSIPATION P (mW)
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
50
100
150
200
250
25 50 75 100 125 150
