TGS2351 - TriQuint - Datasheet.Live

TGS2351

DC – 6 GHz High Power SPDT Switch

Data Sheet: Rev B 06/20/12

- 1 of 11 -

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network®

Applications

 High Power Switching

Product Features

Functional Block Diagram

 Frequency Range: DC – 6 GHz

 Power Handling: up to 40 W

 Insertion Loss: < 0.8 dB

 Isolation: -40 dB typical

 Switching Speed: < 15 ns

 Control Voltages: 0 V/-40 V from either side of

MMIC

 Dimensions: 1.15 x 1.65 x 0.1 mm

General Description

Bond Pad Configuration

The TriQuint TGS2351 is a Single-Pole, Double-Throw

(SPDT) Switch. The TGS2351 operates from DC to 6

GHz and is designed using TriQuint’s 0.25um GaN on

SiC production process.

The TGS2351 typically provides up to 40 W input power

handling at control voltages of 0/-40 V. This switch

maintains low insertion loss < 0.8 dB, and high isolation

-40 dB typical.

The TGS2351 is ideally suited for High Power

Switching application.

Lead-free and RoHS compliant

Evaluation Boards are available upon request.

Bond Pad #

Symbol

1

RF In

2, 7

Vc2

3, 6

Vc1

4

RF Out1

5

RF Out2

Ordering Information

Part No.

ECCN

Description

TGS2351

EAR99

DC – 6 GHz High Power

SPDT Switch

3, 6

Vc2

J1

RF In

Vc1

J2

RF Out1

J3

RF Out2

5

4

2, 7

1

TGS2351

DC – 6 GHz High Power SPDT Switch

Data Sheet: Rev B 06/20/12

- 2 of 11 -

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network®

Specifications

Absolute Maximum Ratings

Parameter

Rating

Control Voltage, Vc

- 50 V

Control Current, Ic

-1 to 7.8 mA

Power Dissipation, Pdiss

10 W

RF Input Power, CW, 50Ω,T = 25ºC

47 dBm

RF Input Power, Hot Switching,

50% switching Duty Cycle

40 dBm

Channel Temperature, Tch

275 oC

Mounting Temperature

(30 Seconds)

320 oC

Storage Temperature

-55 to 150 oC

Operation of this device outside the parameter ranges given

above may cause permanent damage. These are stress

ratings only, and functional operation of the device at these

conditions is not implied.

Recommended Operating Conditions

Parameter

Min

Typical

Max

Units

Vc1

-40 / 0

V

Vc2

0 / -40

V

Ic1 / Ic2

-0.4 to 0.1

mA

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

Electrical Specifications

Test conditions unless otherwise noted: 25ºC, Vc1 = -40/0 V, Vc2 = 0/-40 V, see Function Table at Application Circuit on page

6.

Parameter

Min

Typical

Max

Units

Operational Frequency Range

DC

6

GHz

Control Current (Ic1/ Ic2)

-1

0.1

mA

Insertion Loss (On-State): DC to 6 GHz

0.5

1

dB

Input Return Loss – On-State (Common Port RL)

12

20

dB

Output Return Loss – On-State (Switched Port RL)

12

20

dB

Isolation (Off-State)

-40

-31

dB

Output Return Loss – Off-Sate (Isolated Port RL)

2.5

dB

Input Power 1/

46

dBm

Output Power @ Pin = 46dBm, 1-6GHz

44.5

45

46

dBm

Insertion Loss Temperature Coefficient

-0.003

dB/°C

Output TOI @ Pin = 23 dBm

50

dBm

Switching Speed – On 2/

15

ns

Switching Speed – Off 2/

15

ns

1/ The Input Power will be reduced if < 10 MHz.

2/ These Switching Speed dependent on Switch Driver circuit to deliver Vc = 0/-40 V. The rise and fall time of the Switch Driver which

was used to perform for this data is 35 ns, as shown on page 5. For further technical information, see GaN SPDT Switch Drivers

Application Note

TGS2351

DC – 6 GHz High Power SPDT Switch

Data Sheet: Rev B 06/20/12

- 3 of 11 -

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network®

Specifications (cont.)

Thermal and Reliability Information

Parameter

Condition

Rating

Thermal Resistance, θJC, measured to back of carrier (die

mounted to a 20 mil CuMo carrier using 1.5 mil 80/20

AuSn)

Tbase = 70 °C

θJC = 6.1 °C/W

Channel Temperature (Tch), and Median Lifetime (Tm)

Tbase = 70 °C, Vc1 = 0 V, Vc2 = -40

V, Pin = 40 W, Pdiss = 5.3 W

Tch = 102.5 °C

Tm = 7.2 E+9 Hours

1.E+04

1.E+05

1.E+06

1.E+07

1.E+08

1.E+09

1.E+10

1.E+11

1.E+12

1.E+13

1.E+14

1.E+15

25 50 75 100 125 150 175 200 225 250 275

Median Lifetime, Tm (Hours)

Channel Temperature, Tch (°C)

Median Lifetime (Tm) vs. Channel Temperature (Tch)

FET7

TGS2351

DC – 6 GHz High Power SPDT Switch

Data Sheet: Rev B 06/20/12

- 4 of 11 -

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network®

Typical Performance

-80

-70

-60

-50

-40

-30

-20

012345678910

Isolation (dB)

Frequency (GHz)

Isolation (Off-State) vs. Frequency

Vc1 = 0 V, Vc2 = -40 V, +25 0C

-1.6

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

0 1 2 3 4 5 6 7 8 9 10

Insertion Loss (dB)

Frequency (GHz)

Insertion Loss (On-State) vs. Frequency

Vc1 = -40 V, Vc2 = 0 V, +25 0C

-35

-30

-25

-20

-15

-10

-5

0

012345678910

On-State Return Loss (dB)

Frequency (GHz)

Return Loss (On-State) vs. Frequency

Vc1 = -40 V, Vc2 = 0 V, +25 0C

IRL

ORL

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

0.1

34 36 38 40 42 44 46

Loss Compression (dB)

Input Power (dBm)

Loss Compression vs. Pin vs. Frequency

Vc1 = -40 V, Vc2 = 0 V, +25 0C

1 GHz

2 GHz

3 GHz

4 GHz

-7

-6

-5

-4

-3

-2

-1

0

0 1 2 3 4 5 6 7 8 9 10

Off-State Output Return Loss (dBm)

Frequency (GHz)

Return Loss (Off-State) vs. Frequency

Vc1 = 0 V, Vc2 = -40 V, +25 0C

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

0.1

34 36 38 40 42 44 46

Loss Compression (dB)

Input Power (dBm)

Loss Compression vs. Pin vs. Frequency

Vc1 = -40 V, Vc2 = 0 V, +25 0C

100 MHz

300 MHz

500 MHz

700 MHz

900 MHz

TGS2351

DC – 6 GHz High Power SPDT Switch

Data Sheet: Rev B 06/20/12

- 5 of 11 -

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network®

Typical Performance (cont.)

Switching Speed - On < 50 ns

Vc = 0/-40 V, Freq = 3 GHz, Pin = 30 dBm, +25 0C

0.00

0.01

0.02

0.03

0.04

0.05

34 36 38 40 42 44 46

Control Current, Ic (mA)

Input Power (dBm)

Control Current vs. Pin

Vc1 = -40 V, Vc2 = 0 V, Frequency = 3 GHz, +25 0C

-2.0

-1.8

-1.6

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

0 1 2 3 4 5 6 7 8 9 10

Insertion Loss (dB)

Frequency (GHz)

Insertion (On-State) vs. Freq vs. Temp

Vc1 = -40 V, Vc2 = 0 V

-55 C

+25 C

+85 C

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

0.1

34 36 38 40 42 44 46

Loss Compression (dB)

Input Power (dBm)

Loss Compression vs. Pin vs. Temp

Vc1 = -40 V, Vc2 = 0 V, Frequency = 3 GHz

-55 C

+25 V

+85 C

-5

-4

-3

-2

-1

0

1

34 36 38 40 42 44 46

Loss Compression (dB)

Input Power (dBm)

Loss Compression vs. Pin vs. Vc

Vc2 = 0 V, Frequency = 3 GHz, +25 0C

Vc1 = -40 V

Vc1 = -30 V

Vc1 = -20 V

Switching Speed - Off < 50 ns

Vc = 0/-40 V, Freq = 3 GHz, Pin = 30 dBm, +25 0C

TGS2351

DC – 6 GHz High Power SPDT Switch

Data Sheet: Rev B 06/20/12

- 6 of 11 -

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network®

Application Circuit

Vc1 can be biased from either bond pad 3 or 6, and the non-biased bond pad can be left open.

Vc2 can be biased from either bond pad 2 or 7, and the non-biased bond pad can be left open.

This switch can be configured as a Single Pole, Single Throw (SPST) by terminating one unused

RF Out port with a 50 Ohm load.

Bias-up Procedure

Bias-down Procedure

Vc1 or Vc2 set to -40 V (see Function Table below for RF Path)

Turn off RF supply

Vc2 or Vc1 set to 0 V (see Function Table below for RF Path)

Turn Vc1 to 0V

Apply RF signal to RF Input

Turn Vc2 to 0 V

Function Table

RF Path

State

Vc1

Vc2

RF In to RF Out1 (50 Ohm load to RF Out2)

On-State (Insertion Loss)

0 V

-40 V

Off-State (Isolation)

-40 V

0 V

RF In to RF Out2 (50 Ohm load to RF Out1)

On-State (Insertion Loss)

-40 V

0 V

Off-State (Isolation)

0 V

-40 V

1

5

4

2, 7

3, 6

Vc2

J1

RF In

Vc1

J2

RF Out1

J3

RF Out2

TGS2351

DC – 6 GHz High Power SPDT Switch

Data Sheet: Rev B 06/20/12

- 7 of 11 -

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network®

Bond Pad Description

Bond Pad

Symbol

Description

1

RF In

Input, matched to 50 ohms, DC coupled

2, 7

Vc2

Control voltage #2; can be biased from either side (bond pad 2 or bond pad 7), and non-

biased bond pad can be left opened; see Application Circuit on page 6 as an example

3, 6

Vc1

Control voltage #1; can be biased from either side (bond pad 3 or bond pad 6), and non-

biased bond pad can be left opened; see Application Circuit on page 6 as an example

4

RF Out1

Output #1, matched to 50 ohms, DC coupled

5

RF Out2

Output #2, matched to 50 ohms, DC coupled

1

234

567

TGS2351

DC – 6 GHz High Power SPDT Switch

Data Sheet: Rev B 06/20/12

- 8 of 11 -

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network®

Assembly Drawing

RF In

RF Out2

Vc2

Vc1

RF Out1

TGS2351

DC – 6 GHz High Power SPDT Switch

Data Sheet: Rev B 06/20/12

- 9 of 11 -

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network®

Mechanical Information

Unit: millimeters

Thickness: 0.10

Die x, y size tolerance: +/- 0.050

Chip edge to bond pad dimensions are shown to center of pad

Ground is backside of die

0.0

1.652

0.176

0.621

0.826

1.031

1.477

0.176

0.377

1.276

1.476

0.175

0.0 0.300 0.919 1.150

0.175 0.300 0.919 0.984

1

234

567

Bond Pad

Symbol

Pad Size

1

RF In

0.100 x 0.200

2, 7

Vc2

0.100 x 0.100

3, 6

Vc1

0.100 x 0.100

4

RF Out1

0.200 x 0.100

5

RF Out2

0.200 x 0.100

TGS2351

DC – 6 GHz High Power SPDT Switch

Data Sheet: Rev B 06/20/12

- 10 of 11 -

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network®

Product Compliance Information

ESD Information

ESD Rating: Class 1B

Value: Passes  500 V min.

Test: Human Body Model (HBM)

Standard: JEDEC Standard JESD22-A114

Solderability

This part is compliant with EU 2002/95/EC RoHS

directive (Restrictions on the Use of Certain Hazardous

Substances in Electrical and Electronic Equipment).

This product also has the following attributes:

 Lead Free

 Halogen Free (Chlorine, Bromine)

 Antimony Free

 TBBP-A (C15H12Br402) Free

 PFOS Free

 SVHC Free

ECCN

US Department of Commerce EAR99

Assembly Notes

Component placement and adhesive attachment assembly notes:

• Vacuum pencils and/or vacuum collets are the preferred method of pick up.

• Air bridges must be avoided during placement.

• The force impact is critical during auto placement.

• Organic attachment (i.e. epoxy) can be used in low-power applications.

• Curing should be done in a convection oven; proper exhaust is a safety concern.

Reflow process assembly notes:

• Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum.

• An alloy station or conveyor furnace with reducing atmosphere should be used.

• Do not use any kind of flux.

• Coefficient of thermal expansion matching is critical for long-term reliability.

• Devices must be stored in a dry nitrogen atmosphere.

Interconnect process assembly notes:

• Thermosonic ball bonding is the preferred interconnect technique.

• Force, time, and ultrasonics are critical parameters.

• Aluminum wire should not be used.

• Devices with small pad sizes should be bonded with 0.0007-inch wire.

TGS2351

DC – 6 GHz High Power SPDT Switch

Data Sheet: Rev B 06/20/12

- 11 of 11 -

Disclaimer: Subject to change without notice

Connecting the Digital World to the Global Network®

Contact Information

For the latest specifications, additional product information, worldwide sales and distribution locations, and information about

TriQuint:

Web: www.triquint.com Tel: +1.972.994.8465

Email: info-sales@tqs.com Fax: +1.972.994.8504

For technical questions and application information:

Email: info-products@tqs.com

Important Notice

The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained

herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint

assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained

herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with

the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest

relevant information before placing orders for TriQuint products. The information contained herein or any use of such

information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property

rights, whether with regard to such information itself or anything described by such information.

TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining

applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.