DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BAQ806 AM PIN diode Product specification File under Discrete Semiconductors, SC10 1998 Aug 03 Philips Semiconductors Product specification AM PIN diode BAQ806 FEATURES DESCRIPTION * Glass passivated DO-214AC surface mountable package with glass passivated chip. * High maximum operating temperature The well-defined void-free case is of a transfer-moulded thermo-setting plastic. * Low leakage current * Excellent stability cathode band handbook, 4 columns * UL 94V-O classified plastic package k a * Shipped in 12 mm embossed tape. APPLICATIONS Top view * RF attenuator with low distortion for frequencies above 100 kHz. Side view MSA474 Fig.1 Simplified outline (SOD106) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VRRM repetitive peak reverse voltage - 100 V VR continuous reverse voltage - 100 V Tstg storage temperature -65 +175 C Tj junction temperature -65 +150 C 1998 Aug 03 2 Philips Semiconductors Product specification AM PIN diode BAQ806 ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF IR PARAMETER CONDITIONS forward voltage reverse current MIN. TYP. MAX. IF = 100 mA; see Figs 2 and 3 - 0.9 1.1 V IF = 100 mA; Tj = Tj max; see Figs 2 and 3 - 0.7 0.9 V VR = 100 V; see Fig. 4 - - 0.1 A VR = 100 V; Tj = 125 C; see Fig. 4 - - 30 A 15 25 - s charge carrier life time when switched from IF = 10 mA to IR = 6 mA; measured at 10% of IR; see Fig. 13 Cd diode capacitance f = 1 MHz; see Figs 5, 6, 7 and 8 rD rs diode forward resistance diode series resistance UNIT VR = 0 V - 9 11 pF VR = 2 V - 5 6 pF IF = 10 A - 3300 6000 IF = 100 A - 560 900 IF = 1 mA - 62 90 IF = 10 mA - 7 10 f = 100 kHz; see Figs 9 and 14 f = 100 kHz; see Figs 10, 11 and 12 VR = 0 V 1000 2100 - k VR = 2 V 5000 12000 - k f = 1 MHz; see Figs 10, 11 and 12 VR = 0 V 25 50 - k VR = 2 V 100 250 - k THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS VALUE UNIT 25 K/W note 1 100 K/W note 2 150 K/W Note 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper 35 m, see Fig. 15 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig. 15. For more information please refer to the `General Part of Handbook SC10' 1998 Aug 03 3 Philips Semiconductors Product specification AM PIN diode BAQ806 GRAPHICAL DATA MGG500 104 handbook, halfpage MGG501 104 handbook, halfpage IF (mA) 103 IF (mA) 103 102 102 10 10 1 1 10-1 10-1 10-2 0 0.4 0.8 1.2 1.6 10-2 2.0 0 0.4 Dotted line: Tj = Tj max. Solid line: Tj = 25 C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 MGG502 IR (A) 10 1 0 50 100 Tj (C) 150 VR = VRRMmax. Fig.4 Reverse current as a function of junction temperature; maximum values. 1998 Aug 03 1.2 1.6 2.0 Dotted line: Tj = Tj max. Solid line: Tj = 25 C. 102 handbook, halfpage 10-1 0.8 VF (V) VF (V) 4 Forward current as a function of forward voltage; maximum values. Philips Semiconductors Product specification AM PIN diode BAQ806 MGM477 MGM478 12 10 handbook, halfpage handbook, halfpage Cd (pF) Cd (pF) 8 0V 8 6 2V 4 4 2 0 10 0 2 0 4 6 8 VR (V) 10 102 103 f (kHz) 104 f = 1 MHz Fig.5 Diode capacitance as a function of reverse voltage; typical values. Fig.6 MGM479 40 Diode capacitance as a function of frequency; typical values. MGM480 6 handbook, halfpage handbook, halfpage Cd (pF) Cd (pF) 30 5 85 C 25 C -40 C 20 4 85 C 25 C 10 3 -40 C 0 10 102 103 f (kHz) 2 10 104 VR = 0 V. Fig.7 102 103 f (kHz) VR = 2 V. Diode capacitance as a function of frequency; typical values. 1998 Aug 03 Fig.8 5 Diode capacitance as a function of frequency; typical values. 104 Philips Semiconductors Product specification AM PIN diode BAQ806 MGM481 104 handbook, halfpage MGM482 105 handbook, halfpage rs (k) rD () VR = 2 V 104 103 0V 102 103 10 102 1 10 102 103 IF (A) 10 10 104 Diode forward resistance as a function of forward current; typical values. f (kHz) 104 Fig.10 Diode series resistance as a function of frequency; typical values. MGM483 105 handbook, halfpage rs (k) 103 Tj = 25 C. f = 100 kHz; see Fig. 14. Fig.9 102 105 handbook, halfpage rs (k) -40 C 104 104 MGM484 -40 C 25 C 85 C 25 C 103 103 102 10 10 85 C 102 102 103 f (kHz) 10 10 104 102 103 f (kHz) 104 VR = 0 V. VR = 2 V. Fig.11 Diode series resistance as a function of frequency; typical values. Fig.12 Diode series resistance as a function of frequency; typical values. 1998 Aug 03 6 Philips Semiconductors Product specification AM PIN diode BAQ806 handbook, full pagewidth 10 IF (mA) 10 F pulse f = 1 kHz DUT 10 10 mA 0 10% t IR (mA) 90% 6 MGG506 Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns. Fig.13 Charge carrier life time test circuit and definition. 50 handbook, halfpage 100 kHz 50 R1 1 F IF R2 4.5 DUT 50 Vin Vout 11 V 50 2.5 MGG507 IF (mA) R1 () R2 (k) 3000 100 1 300 10 10 30 1 0.1 1.25 MSB213 Dimensions in mm. Fig.14 Diode forward resistance test circuit. 1998 Aug 03 Fig.15 Printed-circuit board for surface mounting. 7 Philips Semiconductors Product specification AM PIN diode BAQ806 PACKAGE OUTLINE Transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors SOD106 H D A A1 c Q E b (1) 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D E H Q mm 2.3 2.0 0.05 1.6 1.4 0.2 4.5 4.3 2.8 2.4 5.5 5.1 3.3 2.7 Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD106 1998 Aug 03 REFERENCES IEC JEDEC EIAJ DO-214AC EUROPEAN PROJECTION ISSUE DATE 97-06-09 8 Philips Semiconductors Product specification AM PIN diode BAQ806 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Aug 03 9 Philips Semiconductors Product specification AM PIN diode BAQ806 NOTES 1998 Aug 03 10 Philips Semiconductors Product specification AM PIN diode BAQ806 NOTES 1998 Aug 03 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115104/00/01/pp12 Date of release: 1998 Aug 03 Document order number: 9397 750 03998