SFH 3201
NPN-Silizium-Fototransistor im SMT-Gehäuse
Silicon NPN Phototransistor in SMT Package
Lead (Pb) Free Product - RoHS Compliant
2007-03-30 1
Wesentliche Merkmale
Speziell geeignet für Anwendunge n im Bereich
von 460 nm bis 1080 nm
Hohe Linearität
Nur gegurtet lieferbar
Anwendungen
Umgebungslicht-Detektor
Lichtschranken für Gleich- und
Wechsel-lichtbetrieb
Industrieelektronik
„Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code
SFH 3201 Q65110A1207
SFH 3201-2/3 Q65110A2479
Features
Especially suitable for applications from
460 nm to 1080 nm
High linearity
Available only on tape and reel
Applications
Ambient light detector
Photointerrupters
Industrial electronics
For control and drive circuits
2007-03-30 2
SFH 3201
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 + 100 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 20 V
Kollektor-Emitterspannung, t < 120 s
Collector-emitter voltage VCE 70 V
Kollektorstrom
Collector curr ent IC50 mA
Kollektorspitzenstrom, τ < 10 μs
Collector surge current ICS 100 mA
Emitter-Kollektorspannung
Emitter-collector voltage VEC 7 V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 120 mW
Wärmewiderstand für Montage auf PC-Board
Thermal resistance for mounting on pcb RthJA 500 K/W
SFH 3201
2007-03-30 3
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 850 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sens itivity
S = 10% of Smax
λ460 1080 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A0.55 mm2
Abmessung der Chipfläche
Dimensions of chip area L × B
L × W1 × 1 mm × mm
Halbwinkel
Half angle ϕ± 60 Grad
deg.
Kapazität, VCE = 0 V, f = 1 MHz, E = 0
Capacitance CCE 15 pF
Dunkelstrom
Dark current
VCE = 20 V, E = 0
ICEO 3 (200) nA
2007-03-30 4
SFH 3201
Directional Characteristics
Srel = f (ϕ)
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
-1 -2 -3
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.1 mW/cm2, VCE = 5 V
Ev = 1000 Ix, Normlicht/
standard light A, VCE = 5 V
IPCE
IPCE
63 125
1.65
100 200
2.6
160 320
4.2
μA
mA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf16 24 34 μs
Kollektor-Emitter-
Sättigungsspannung
Collector-emitter saturation voltage
IC = IPCEmin1) × 0.3,
Ee = 0.1 mW/cm2
VCEsat 170
(250) 170
(250) 170
(250) mV
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.
1) IPCEmin is the min. photocurrent of the specified group.
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
SFH 3201
2007-03-30 5
TA = 25 °C, λ = 950 nm
Rel. Spectral Sensitivity,
Srel = f (λ)
Photocurrent IPCE = f (TA),
VCE = 5 V, normalized to 25 °C
Photocurrent
IPCE = f (VCE)
λ
OHF02332
0
rel
S
400
10
20
30
40
50
60
70
80
%
100
500 600 700 800 900 nm 1100
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
V
OHF00327
ce
001020 30 40 50 60 70V
mA
pce
Ι
1.0 mW/cm
0.5
1.0
1.5
2.0
2.5
3.0
2
2
0.5 mW/cm
0.25 mW/cm
2
0.1 mW/cm
2
Photocurrent
IPCE = f (Ee), VCE = 5 V
Dark Current
ICEO = f (VCE), E = 0
Collector-Emitter Capacitance
CCE = f (VCE), f = 1 MHz
E
OHF00326
e
-3
10
pce
Ι
-4
10
10
1
mA
2
mW/cm10
-2
10
0
10
-3
10
-2
10
-1
0
10 1
2
3
V
OHF02341
CE
0
CEO
Ι
-2
10
10
-1
10
0
10
1
10
2
nA
10 20 30 40 50 70V
V
OHF02344
CE
C
0
10 -2 -1
10 0
10 1
10 10 2
V
pF
5
10
15
20
Total Power Dissipation
Ptot = f (TA)
Dark Current
ICEO = f (TA), VCE = 10 V, E = 0
T
OHF00309
A
0
tot
P
020 40 60 80 C 100
mW
20
40
60
80
100
120
140
T
OHF02342
A
0
CEO
Ι
-1
10
10
0
10
1
10
2
10
3
nA
20 40 60 80 100˚C
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SFH 3201
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
3.4 (0.134)
3.0 (0.118)
5.8 (0.228)
6.2 (0.244)
0.15 (0.006)
0.13 (0.005)
0...0.1 (0...0.004)
2.1 (0.083)
1.7 (0.067)
4
6
1
3
GEOY6982
4.2 (0.165)
3.8 (0.150)
25
- Emitter Collector
12 3 4 6
5
---
0.3 (0.012)
0.5 (0.020)
spacing
spacing
0.4 (0.016)
0.7 (0.028)
B
A
0.2 M
A
Active area 0.55 (0.022)
0.1 M
B
2.54 (0.100)
1.27 (0.050)
SFH 3201
2007-03-30 7
Empfohlenes Lötpaddesign Reflow Löten
Recommended Solder Pad Reflow Soldering
Solder resist
Lötstopplack
Cu-area >5 mm
Cu-Fläche >5 mm
2
OHPY0030
3.9 (0.154)
1.2 (0.047)
1.27 (0.050)
0.6 (0.024)
1.27 (0.050)
2
Paddesign
Wärmeableitung
for improved
für verbesserte
Padgeometrie
Heat dissipation
2007-03-30 8
SFH 3201
Lötbedingungen Vorbehandlung nach JEDEC Level 4
Soldering Conditions Preconditioning acc. to JEDEC Level 4
Reflow Lötprofil für bleifreies Löten (nach J-STD-020C)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C
+0 ˚C
-5 ˚C
245 ˚C
±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C
-0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
SFH 3201
2007-03-30 9
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organiza tion.
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incurred.
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components 1 , may only be used in life-supp ort devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reas onable to assume that the health of the user may be endangered.