IXFP110N15T2 - Zilog - Datasheet.Live

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 175°C 150 V

VDGR TJ= 25°C to 175°C, RGS = 1MΩ150 V

VGSS Continuous ± 20 V

VGSM Transient ± 30 V

ID25 TC= 25°C 110 A

IDM TC= 25°C, pulse width limited by TJM 300 A

IATC= 25°C50 A

EAS TC= 25°C 800 mJ

dV/dt IS≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C 15 V/ns

PDTC= 25°C 480 W

TJ-55 ... +175 °C

TJM 175 °C

Tstg -55 ... +175 °C

TL1.6mm (0.062in.) from case for 10s 300 °C

Tsold Plastic body for 10 seconds 260 °C

MdMounting torque (TO-220) 1.13 / 10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 150 V

VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V

IGSS VGS = ± 20V, VDS = 0V ±200 nA

IDSS VDS = VDSS 5 μA

VGS = 0V TJ = 150°C 150 μA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 11 13 mΩ

TrenchT2TM HiperFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXFA110N15T2

IXFP110N15T2

VDSS = 150V

ID25 = 110A

RDS(on) ≤≤

≤≤

≤ 13mΩΩ

ΩΩ

Ω

DS100093(12/08)

G = Gate D = Drain

S = Source TAB = Drain

Features

zInternational standard packages

z175°C Operating Temperature

zHigh current handling capability

zFast intrinsic Rectifier

zDynamic dV/dt rated

zLow RDS(on)

Advantages

zEasy to mount

zSpace savings

zHigh power density

Applications

zDC-DC converters

zBattery chargers

zSwitched-mode and resonant-mode

power supplies

zDC choppers

zAC motor drives

zUninterruptible power supplies

zHigh speed power switching

applications

Preliminary Technical Information

TO-263

GS

(TAB)

TO-220

GDS(TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFA110N15T2

IXFP110N15T2

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

gfs VDS = 10V, ID = 55A, Note 1 75 115 S

Ciss 8600 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 685 pF

Crss 77 pF

td(on) 33 ns

tr 16 ns

td(off) 33 ns

tf 18 ns

Qg(on) 150 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 42 nC

Qgd 46 nC

RthJC 0.31 °C/W

RthCH TO-220 0.50 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

IS VGS = 0V 110 A

ISM Repetitive, Pulse width limited by TJM 440 A

VSD IF = 100A, VGS = 0V, Note 1 1.3 V

trr 85 ns

IRM 6.8 A

QRM 290 nC

Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

2. On through-hole packages, RDS(on) Kelvin test contact

location must be 5mm or less from the package body.

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 3.3Ω (External)

IF = 55A, VGS = 0V

-di/dt = 100A/μs

VR = 75V

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

TO-263 (IXFA) Outline

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

TO-220 (IXFP) Outline

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXFA110N15T2

IXFP110N15T2

Fig. 1. Output Characteristics

@ 25º C

0

10

20

30

40

50

60

70

80

90

100

110

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

8V

7V

5V

6V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

50

100

150

200

250

300

350

0246810121416

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

8V

6V

7V

Fig. 3. Output Characteristics

@ 150ºC

0

10

20

30

40

50

60

70

80

90

100

110

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

8V

7

V

6

V

Fig. 4. R

DS(on)

Normalized to I

D

= 55A Val u e

vs. Ju ncti o n Temperatu r e

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 110A

I

D

= 55A

Fig. 5. R

DS(on)

Normalized to I

D

= 55A Value

vs. Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0 50 100 150 200 250 300

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V - - - - T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current vs. Case T emperature

0

10

20

30

40

50

60

70

80

90

100

110

120

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFA110N15T2

IXFP110N15T2

IXYS REF: F_110N15T2(61)12-17-08

Fig. 7. Input Adm ittance

0

20

40

60

80

100

120

140

160

3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6

V

GS

- Volts

I

D

- Amperes

T

J

= 150ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

20

40

60

80

100

120

140

160

180

0 20 40 60 80 100 120 140 160

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

150ºC

25ºC

Fig. 9. Forward Voltage Drop of

In tr i n sic Di ode

0

50

100

150

200

250

300

350

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

V

SD

- Volts

I

S

- Amperes

T

J

= 150ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 20 40 60 80 100 120 140 160

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 75V

I

D

= 55A

I

G

= 10mA

Fig. 11. Capacitance

10

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

0.1

1.0

10.0

100.0

1,000.0

1 10 100 1000

V

DS

- Volts

I

D

- Amperes

25µs

100µs

1ms

10ms

100ms

R

DS(on)

Limit

T

J

= 175ºC

T

C

= 25ºC

Single Pulse

IXFA110N15T2

IXFP110N15T2

Fi g. 14. R esi stive Tu r n-o n

Ri se Time vs. D r ain C ur r en t

14

15

16

17

18

19

20

55 60 65 70 75 80 85 90 95 100 105 110

I

D

- Amperes

t

r

- Nanoseconds

R

G

= 3.3

V

GS

= 10V

V

DS

= 75V

T

J

= 25ºC

T

J

= 125ºC

Fi g. 15. R esi stive Tu r n-o n

Switc h i n g Ti me s vs. Gate R e si stan ce

0

40

80

120

160

200

240

280

2 4 6 8 10 12 14 16 18 20

R

G

- Ohms

t

r

- Nanoseconds

20

30

40

50

60

70

80

90

t

d(on)

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 75V

I

D

= 55A

I

D

= 110A

Fig. 16. Resistive Turn-off

Switching T imes vs. Junction Temperature

16

18

20

22

24

26

28

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

20

30

40

50

60

70

80

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 3.3, V

GS

= 10V

V

DS

= 75V

I

D

= 55A, 110A

Fi g . 17. Res i sti ve Tu r n -o ff

Switching T imes vs. Drain Current

17

18

19

20

21

22

23

55 60 65 70 75 80 85 90 95 100 105 110

I

D

- Amperes

t

f

- Nanoseconds

20

30

40

50

60

70

80

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 3.3, V

GS

= 10V

V

DS

= 75V

T

J

= 125ºC

T

J

= 25ºC

Fi g. 13. R esi stive Tu r n-o n

Ri se Ti me vs. Ju n ct i o n Temper a tu r e

12

13

14

15

16

17

18

19

20

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 3.3

V

GS

= 10V

V

DS

= 75V

I

D

= 110A

I

D

= 55A

Fig. 18. Resistive Turn-off

Switchi n g Ti mes vs. Gate R esi stance

0

20

40

60

80

100

120

2 4 6 8 10 12 14 16 18 20

R

G

- Ohms

t

f

- Nanoseconds

10

50

90

130

170

210

250

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 75V

I

D

= 110A

I

D

= 55A

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFA110N15T2

IXFP110N15T2

IXYS REF: F_110N15T2(61)12-17-08

Fi g. 19. Maxi mum Tr an si en t Th er mal Imped an ce

0.001

0.010

0.100

1.000

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W