&) HARRIS August 1991 2N6769 2N6770 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors Features 11A and 12A, 450V - 500V * rpS(on) = 0-52 and 0.49 SOA is Power-Dissipation Limited e Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Description The 2N6769 and 2N6770 are n-channel enhancement-mode silicon-gate power MOS field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar Package TO-2040A BOTTOM VIEW DRAIN SOURCE / (FLANGE) Terminal Diagram N-CHANNEL ENHANCEMENT MODE switching transistors requiring high speed and low gate-drive power. dD These types can be operated directly from integrated circuits. These types are supplied in the JEDEC TO-204AA steel package. G Ss Absolute Maximum Ratings (Tc = +250C), Unless Otherwise Specified 2N6769 2N6770 UNITS Drain-Source Voltage ....... 0. ccc cee terete n ener en een renee 450* 500* Vv Drain-Gate Voltage (RGS = 20K). ... 6 eee eee eee eee eens 450* 500* v Continuous Drain Current TG HF 259C oo ec eeceeeente nen er cence renee ee eee 1 12 A TO = FVOO9 1c cee ence eee eee eet eneee 7 7.75 A Pulsed Drain Current.......... 0c ccc cece c ener e nent eee eenaee 20 25 A Gate-Source Voltage 2.0.0... cece cette teen ecto eneee +20* +20* Vv Maximum Power Dissipation To = +259C (See Figure 11)... 6c eee cnet erence eens Pp 150* 150* Ww Above Tg = +259C, Derate Linearly (See Figure 11) .........-.eeeeeee 1.2* 1.2* W/9G Inductive Current, Clamped ......... 0.00 c ec eee recent teen renee lL 20 25 A {See Figures 1 and 2,L = 100yH) Operating and Storage Junction Temperature Range............ Ty. TSTG -55 to +150* ~55 to +150* 9G Maximum Lead Temperature for Soldering ............0.ce cece ee eeeee TL 300* 300* C {0.063 (1.6mm) from case for 10s) *JEDEC registered values CAUTION: These devices are sensitive to electrostatic discharge. Proper |.C. handling procedures should be followed. File Number 1 89 9.1 Copyright Harris Corporation 1991 4-35 2 aj Wl wy & Zz ZO <= = oa z oO aSpecifications 2N6769, 2N6770 Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) Parameter Type Min. Typ. Max Units Tast Conditions BVpsg Orain Source Breakdown Voitage | 2N6769 450 - ~ v Vgs =9 2N6770 500 - ~_ Vv Ip =4.0mA Ves(th) Gate Threshold Voltage ALL 2.0 - 40 Vv Vos = Vos. !p=1mA 'Gssr Gate Body Leakage Forward ALL - - 100* nA Vgg = 20V 'ossp Gate Body Leakage Reverse ALL _ ~ 100 nA Vos = -20V loss Zero Gate Voltage Drain Current - 0.1 1.0* mA Vos* 0.8 x Max. Rating, Vgg = 0 ALL - 0.2 40 mA Vos = Max. Rating, Vgg = 9, To = 25C to 125C Vos(on) Static Drain-Source On-State 2N6769 - - 6.0 Vv Vg = 10V, Ip = 114 Voltage @ 2N6770 - - 6.0* Vv Vgg = 10V, Ip = 12A Rosion) Static Drain-Source On-State 2N6769 - 0.4 0.5* 2 Vas = 10V, Ig = 7A Resistance Q 2N6770 ~- 0.3 0.4* 2 Vgs = 10V. Ip = 7.754 Rpston) Static Drain-Source On-State 2N6769 _ - 11 n Vgs = 10V, Ip = 7.04, Teo = 125C Resistance Gg 2N6770 - - 0.88" n Vgs = 10V, Ip = 7.75A, Te = 125C OF, Forward Transconductance QO ALL 8.0 12.0 24 $(U) | Vgg=10V Ip=7.754 Cigg Input Capacitance ALL 1000* | 2000 3000* pF Veg = 9, Vos = 25V, f = 1.0 MHz Cass Output Capacitance ALL 200 400 600 pF See Fig. 10 e Fig. Cres Reverse Transfer Capacitance ALL 50 100 200 pF tg {on} Turn-On Delay Time ALL ~ - 35 ng Vo0 = 210V, Ip = 7.754, 2574.72 t Rise Time ALL - - 50 ns (See Figs. 13 and 14) td (off) Turn-Off Delay Time ALL - - 150 ns (MOSFET switching times are essentially t Fall Time ALL ~ = 70* ns independent of operating temperature.) Thermal Resistance Rinuc _ Junction-to-Case ALL - - 0.83" | *=c/;w Rincs Case-to-Sink ALL - 0.1 _ C/W | Mounting surface flat, smooth, and greased. Panga Junction-to-Ambient ALL - - 30 C/W Free Air Operation Body-Drain Diode Ratings and Characteristics Ig Continuous Source Current 2N6769 - - 11" A Modified MOSFET symbol D (Body Diode) 2N6770 - _ y2* showing the integral / reverse P-N junction rectifier. ( | sm Pulsed Source Current 2N6769 - - 20 A G / {Body Diade) 2N6770 _ _ 25 s Vsp Diode Forward Voltage a 2N6769 0.75* - 1.5* v To= 25C, Ig = 11A,Vgg=0 26770 | 0.80" | - 1.6" Vv | Te = 26C, tg = 124, Vgg = 0 ley Reverse Recovery Time ALL - 1300 = ns Ty = 150C, Ip = Igy, dig /dt = 100 A/us QreR Reverse Recovered Charge ALL - 74 - uc Ty = 150C, Ip = Iggy, dip /dt = 100 A/us *JEDEC registered values. VARY tg TO OBTAIN REQUIRED PEAK I E = 1 = O.5BVnsg our I= Vp = 0.75BVps5 Vgg = 10V 'b Fig. 1 - Clamped inductive test circuit. 4-36 @) Pulse Test: Pulse Width < 300 usec, Duty Cycle < 2% Fig. 2 - Clamped inductive waveforms.2N6769, 2N6770 Ty = 2500 Vos = 15 1 1 Ty= 12500 90 us PULSE TEST a a i 2 = ow = z z < - e S z z= vy = = Ty 2 o 2 =z z = Ty = 280C =} a = 6 3S ~ Ty -809C 4.0V 0 50 v00 190 200 250 300 Vos, DRAIN-TO-SQUACE VOLTAGE (VOLTS) 0 1 2 3 4 5 6 7 8 Vgs, GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 - Typical output characteristics for both types. Fig. 4 - Typical transfer characteristics for both types. us PULSE TEST 2 8 dn a = zon g 3 S = =z 5 3 = < < <6 ra 5 5 Ow 3 = 2 zs 3 3 [o) : z 4 a. 6 5 3 3 2 ww 3sv 9 1 2 3 4 5 0 1 2 3 4 6 Vps. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 5 - Typical saturation characteristics for the 2N6769. Fig. 6. - Typical saturation characteristics for the 2N6770. 100 Ty = -50C 50 Ty = 250C 20 3 bc Ty 128 a 3 = 10 8 : = 60 < z $ 2 > x 2 3 20 So z 8 z B a 2 to 5 3S Ty = 150 C MAX SINGLE PULSE 2N6770 O41 0 5 10 16 20 25 Ip, DRAIN CURRENY (AMPERES) 50 "0 20 50 100 200 500 Vos, DRAIN-TO-SGURCE VOLTAGE (VOLTS) Fig. 7 - Typical transconductance versus drain current Fig. 8 - Maximum safe operating area for both types. for both types. 4-372N6769, 2N6770 4000 22 8 3200 < B18 a & = = & Bs > 2400 SN 14 z Sz = i : Ee = 1600 = 10 a q o = a 3 2 os Vgg~ 10 800 =~ Ip = 7.758 02 -40 a 40 80 120 160 0 0 20 0 0 50 Ty, JUNCTION TEMPERATURE (C) Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 9 - Typical normalized on-resistance versus temp- Fig. 10 - Typical capacitance versus drain-to-source erature for both types. voltage for both types. ggg, 2N6770 2 8 ig, 2N6770 Z #0 z < o 6 z 2 8 = 5 6 8 w Ty = 150C Ty = 250C z 5 = a 2 2 2 1.0 a 2 6 = 80100120140 4 ' 2 Te, CASE TEMPERATURE (C) Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 11 - Power versus temperature derating curve Fig. 12 - Typical body-drain diode forward voltage for both types. for both types. 'p 9 PULSE WIDTH = Vv Vou = 28 VGs (on) so 272 INPUT, Vj 50% PRE = 1kHz Vo 10%, 10% =1 VGS (off) f tNPUT PULSE INPUT PULSE eae TO SCOPE > RISE TIME FALL TIME td (an) > a (oft) Ca Wa YDS (off) " 10% OUTPUT, Vg . 90% a L20v Vos (on) = = + je ton | eto Fig. 13 - Switching time test circuit. Fig. 14 - Switching time waveforms 4-38