PN918 c TO-92 E Discrete POWER & Signal Technologies MMBT918 SOT-23 B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absol ute Maxim um Rati ngs* TA = 25C unless otherwise noted Symbol Parameter Value Units Voeo Collector-Emitter Voltage 15 Vv Voso Collector-Base Voltage 30 Vv VeBo Emitter-Base Voltage 3.0 Vv Ic Collector Current - Continuous 50 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units PN918 *MMBT918 Pp Total Device Dissipation 350 225 mW Derate above 25C 28 1.8 mw/C Resc Thermal Resistance, Junction to Case 125 C/W Roa Thermal Resistance, Junction to Ambient 357 556 C/W * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation SL6LGININ / 8L6NdElectrical Characteristics TA = 25C unless otherwise noted NPN RF Transistor (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Veeoisus) Collector-Emitter Sustaining Voltage* lo = 3.0 mA, lp = 0 15 Vv VeerjcBo Collector- Base Breakdown Voltage Ic =1.0A, le=0 30 Vv Visr)eB0 Emitter-Base Breakdown Voltage le= 10 pA, Ic = 0 3.0 Vv loBo Collector Cutoff Current Vop = 15 V, le =0 0.01 HA Vop = 15 V, Ta = 150C 1.0 pA ON CHARACTERISTICS Hee DC Current Gain lo=3.0 mA, Voz = 1.0 V 20 Veesaty Collector- Emitter Saturation Voltage lo = 10 mA, Ip= 1.0 mA 0.4 Vv Vee(sah Base-Emitter Saturation Voltage Ig = 10 mA, I3= 1.0 mA 1.0 Vv SMALL SIGNAL CHARACTERISTICS f Current Gain - Bandwidth Product Io = 4.0 mA, Voce = 10 V, 600 MHz f= 100 MHz Cobo Output Capacitance Ves = 10 V, le = 0, f = 1.0 MHz 1.7 pF Ves = 0, le = 0, f = 1.0 MHz 3.0 pF Cibo Input Capacitance Vee = 0.5 V, Ic = 0, f = 1.0 MHz 2.0 pF NF Noise Figure lo = 1.0 mA, Voce = 6.0 V, 6.0 dB Re = 400Q, f =60 MHz FUNCTIONAL TEST Gpe Amplifier Power Gain Vop = 12 V, Io = 6.0 mA, 15 dB f = 200 MHz Po Power Output Vop = 15 V, lk = 8.0 mA, 30 mw f = 500 MHz n Collector Efficiency Vop = 15 V, le = 8.0 mA, 25 % f = 500 MHz *Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0% SL6LGININ / 8L6NdNPN RF Transistor (continued) DC Typical Characteristics Typical Pulsed Current Gain Collector-Emitter Saturation vs Collector Current Voltage vs Collector Current 100 0.3 90 80 70 60 50 40 30 20 01 0.2 05 1 2 5 10 20 50 I- COLLECTOR CURRENT (mA) 0.25 B =10 0.2 0.1 0.05 hee - TYPICAL PULSED CURRENT GAIN 0.1 10 30 1 I> - COLLECTOR CURRENT (mA) Voesar COLLECTOR-EMITTER VOLTAGE (V) Base-Emitter Saturation Base-Emitter ON Voltage vs Voltage vs Collector Current Collector Current Bp =10 Veg = 5V -40 C 2 oo o a ms Veesar>- BASE-EMITTER VOLTAGE (V) Vaeom BASE-EMITTER ON VOLTAGE (V) 0.1 1 10 20 I, - COLLECTOR CURRENT (mA) a 1 10 30 |, - COLLECTOR CURRENT (mA) Collector-Cutoff Current vs Ambient Temperature Vop= 20V logo COLLECTOR CURRENT (nA) "25 50 76 100 125 150 T,- AMBIENT TEMPERATURE ( C) SL6LGININ / 8L6NdNPN RF Transistor (continued) AC Typical Characteristics Input and Output Capacitance vs Reverse Voltage rc z w 10 oO = e g a 1 <q oO 01 01 1 10 100 Vee - COLLECTOR VOLTAGE (V) Contours of Constant Gain Bandwidth Product (f,) 15 Ta = 25C = 12 x Ke S > 9 ec o = o ww 6 _ o oo | 3 Ww oO > 0 0.10.2 O85 1 5 10 20 50 100 Ic COLLECTOR CURRENT (mA) Small Signal Current Gain vs. Collector Current f= 10 MHz Vog = 10V 0 2 4 6 8 10 lc - COLLECTOR CURRENT (mA) hee SMALL SIGNAL CURRENT TRANSFER RATIO Gain Bandwidth Product vs Collector Current 140 Vee= 5V Ny Q 3 Q 3 bh Ny ft - GAIN BANDWIDTH PRODUCT (MHz) oO oO oa 10 20 50 100 200 |,- COLLECTOR CURRENT (mA) Contours of Constant Noise Figure 1000 456 7 on oa oa 200 _ o ao on oa NOISE FIG. (dB) Rg SOURCE RESISTANCE (2) NR o f = 60 MHz Vee =6V = o 0.1 1 10 100 le COLLECTOR CURRENT (mA) POWER DISSIPATION vs AMBIENT TEMPERATURE 350 - POWER DISSIPATION (mW) > = YY DY Bw oa 8S & S oo 6 6 6 Pp a oO Qo 0 2 50 75 100 125 150 TEMPERATURE (C) SL6LGININ / 8L6NdNPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Input Admittance vs. Collector Current-Output Short Circuit _ f= 10.7 MHz 2 Voce = 10V 16 re = x 1.2 -_ E = a <x o8 -_ => a =z 7 04 = 0 0 2 4 6 8 10 Io COLLECTOR CURRENT (mA) Input Admittance vs. Frequency-Output Short Circuit 25 Ic =5.0mA Ne 2 Vee = 10V E 20 to oa 2 <x 15 E 3 =x 10 - = a z 7 5 2 bie ~ 0 10 20 50 100 200 500 1000 f FREQUENCY (MHz) Forward Transfer Admittance vs. Collector Current-Output Short Circuit f= 10.7MHz Voce = 10V = nN Ss _ 40 20 bte Ys. FORWARD TRANSADMITTANCE (mmho) 2 4 6 8 10 ic COLLECTOR CURRENT (mA) Yeo ~ FORWARD TRANSFER ADMITTANCE (mmho) Y,e INPUT ADMITTANCE (mmho}) Yep FORWARD TRANSFER ADMITTANCE (mmho} Input Admittance vs. Collector Current-Output Short Circuit 10 f= 100 MHz Vee = 10V 1 0 2 4 6 8 10 ic COLLECTOR CURRENT (mA) Forward Transfer Admittance vs. Frequency-Output Open Circuit 100 Io = 5.0 mA Voge = 10 80 60 40 20 0 10 620250) 100 200 = 500 1000 f - FREQUENCY (MHz) Forward Transfer Admittance vs. Collector Current-Output Short Circuit = oe eo = 100 MHz 40 20 2 4 6 8 10 Ic COLLECTOR CURRENT (mA) SL6LGININ / 8L6NdNPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency (continued) Reverse Transfer Admittance vs. Reverse Transfer Admittance vs. = Collector Current-Input Short Circuit Collector Current-Input Short Circuit E Ee 0.10 1.0 f= 10.7 MHz = aw ve) Vv = 1 = 0.08 ae Noe 7 10t = as t Ee E = = 0? = 0.06 < e e wi we 04 2 0.04 2 < <= 0.05 - - 2 0.02 % a & 002 > > rd ec f= 100 1 0 ( 0.01 sf 0 2 4 6 8 10 > 0 2 4 6 8 10 Ic COLLECTOR CURRENT (mA) ic - COLLECTOR CURRENT (mA) Reverse Transfer Admittance vs. Output Admittance vs. Collector 4 Frequency-Input Short Circuit 030 Current-Input Short Circuit = le E *[i=80mA - f= 10.7 Miz = Z = 40V eo [Meer iy E 0.25 [vce = 10 = = bee E 2 0.20 = 3 =< = E & = 0.15 aw 2 < g - = > 0.10 < a @. E 5 uw 1 o 2 1 0.05 x 8 # 0 4 a 10 20 50 100 200 500 1000 a 2 4 6 8 10 > f FREQUENCY (MHz) Ic COLLECTOR CURRENT (mA) Output Admittance vs. Collector Output Admittance vs. 20 Current-Input Short Circuit Frequency-Input Short Circuit = T= 100 MHz 3 10 C= S0mA = E Vee = 10V b = (8 Voce = 5.0V = 3 * o o z 2 pt Vee = 10V rE 6 5 3 = 08 ~ 4 > ce = 5.0V > a a 5 5 S 04 a 2 \ ce=1 3 o > > 0 0 a 2 4 6 8 10 10 20 =50 100 200 500 1000 te COLLECTOR CURRENT (mA) f FREQUENCY (MHz) SL6LGININ / 8L6NdNPN RF Transistor (continued) Test Circuit 50 pF (NOTE 2) 175 pF I 500 mHz Output I Oo into 500 (NOTE 1) NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long 1000 pF RFC Veo Veo FIGURE 1: 500 MHz Oscillator Circuit SL6LGININ / 8L6Nd