DATA SH EET
Product specification July 2001
DISCRETE SEMICONDUCTORS
MAC223 series
Triacs
July 2001 2 Rev 1.000
Philips Semiconductors Product specification
Triacs MAC223 series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX MAX. UNIT
intended for use in applications requiring
high bidirectional transient and blocking MAC223 A6 A8
voltage capability and high thermal
cycling performance. Typical V
DRM
Repetitive peak off-state 400 600 V
applications include motor control, voltages
industrial and domestic lighting, heating I
T(RMS)
RMS on-state current 25 25 A
and static switching. I
TSM
Non-repetitive peak on-state 230 230 A
current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
MAC223 A6 A8
V
DRM
Repetitive peak off-state - 400
1
600
1
V
voltages
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 91 ˚C - 25 A
I
TSM
Non-repetitive peak full sine wave; T
j
= 25 ˚C prior to
on-state current surge
t = 20 ms - 190 A
t = 16.7 ms - 230 A
I
2
tI
2
t for fusing t = 10 ms - 180 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 30 A; I
G
= 0.2 A;
on-state current after dI
G
/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
T1T2
G
123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
July 2001 3 Rev 1.000
Philips Semiconductors Product specification
Triacs MAC223 series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance full cycle - - 1.0 K/W
junction to mounting base half cycle - - 1.4 K/W
R
th j-a
Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current V
D
= 12 V; I
T
= 0.1 A T2+ G+ - 6 50 mA
T2+ G- - 10 50 mA
T2- G- - 11 50 mA
T2- G+ - 23 75 mA
I
L
Latching current V
D
= 12 V; I
GT
= 0.1 A T2+ G+ - 8 40 mA
T2+ G- - 30 60 mA
T2- G- - 18 40 mA
T2- G+ - 15 60 mA
I
H
Holding current V
D
= 12 V; I
GT
= 0.1 A T2+ - 7 30 mA
T2- - 12 30 mA
V
T
On-state voltage I
T
= 30 A - 1.3 1.55 V
V
GT
Gate trigger voltage V
D
= 12 V; I
T
= 0.1 A - 0.7 1.5 V
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 ˚C 0.25 0.4 - V
I
D
Off-state leakage current V
D
= V
DRM(max)
; T
j
= 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dV
D
/dt Critical rate of rise of V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C; 100 300 - V/µs
off-state voltage exponential waveform; gate open circuit
dV
com
/dt Critical rate of change of V
DM
= 400 V; T
j
= 95 ˚C; I
T(RMS)
= 25 A; - 10 - V/µs
commutating voltage dI
com
/dt = 9 A/ms; gate open circuit
t
gt
Gate controlled turn-on I
TM
= 30 A; V
D
= V
DRM(max)
; I
G
= 0.1 A; - 2 - µs
time dI
G
/dt = 5 A/µs
July 2001 4 Rev 1.000
Philips Semiconductors Product specification
Triacs MAC223 series
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
91˚C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
0 5 10 15 20 25 30
0
10
20
30
40
= 180
120
90
60
30
IT(RMS) / A
Ptot / W Tmb(max) / C
125
115
105
95
85
1
-50 0 50 100 150
0
5
10
15
20
25
30 BTA140
91 C
Tmb / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms
10
100
1000
T / s
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
T2- G+ quadrant
0.01 0.1 1 10
0
10
20
30
40
50
surge duration / s
IT(RMS) / A
1 10 100 1000
0
50
100
150
200
Number of cycles at 50Hz
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
July 2001 5 Rev 1.000
Philips Semiconductors Product specification
Triacs MAC223 series
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
T
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
-50 0 50 100 150
0
1
2
3
4
5
Tj / C
T2+ G+
T2+ G-
T2- G-
T2- G+
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2 2.5 3
0
10
20
30
40
50
60
70
80 BTA140
VT / V
IT / A
Tj = 125 C
Tj = 25 C
Vo = 1.073 V
Rs = 0.015 ohms
typ max
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10 BTA140
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp
P
t
D
bidirectional
unidirectional
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25C)
0 50 100 150
1
10
100
1000
9.015
Tj / C
12
dV/dt (V/us)
7.0
dIcom/dt =
25 A/ms 20
off-state dV/dt limit
July 2001 6 Rev 1.000
Philips Semiconductors Product specification
Triacs MAC223 series
Dimensions in mm
Net Mass: 2 g
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
123
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
July 2001 7 Rev 1.000
Philips Semiconductors Product specification
Triacs MAC223 series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
© Koninklijke Philips Electronics N.V. 2001 SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands XXXXXX/700/02/pp8 Date of release: July 2001 Document order number: 9397 750 08942
