AUTOMOTIVE GRADE AUIRFS4310Z HEXFET(R) Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS RDS(on) typ. max. D2-Pak AUIRFS4310Z ID (Silicon Limited) 6.0m 127A ID (Package Limited) 120A S G D2-Pak AUIRFS4310Z G Gate D Drain Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Package Type 4.8m D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number 100V S Source Orderable Part Number AUIRFS4310Z AUIRFS4310ZTRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 127 ID @ TC = 100C ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 90 120 IDM PD @TC = 25C Pulsed Drain Current Maximum Power Dissipation 560 250 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA Parameter Junction-to-Case Junction-to-Ambient (PCB Mount), D2 Pak Units A W 1.7 20 130 See Fig.14,15, 22a, 22b 18 -55 to + 175 W/C V mJ A mJ V/ns C 300 Typ. Max. Units --- --- 0.6 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-10-12 AUIRFS4310Z Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units 100 --- --- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.11 --- V/C Reference to 25C, ID = 5mA RDS(on) Static Drain-to-Source On-Resistance --- 4.8 6.0 m VGS = 10V, ID = 75A VGS(th) Gate Threshold Voltage 2.0 --- 4.0 V gfs RG Forward Trans conductance Gate Resistance IDSS Drain-to-Source Leakage Current 150 --- --- --- 0.7 --- --- --- 20 --- --- 250 S VDS = 50V, ID = 75A VDS = 100V, VGS = 0V A VDS = 80V,VGS = 0V,TJ =125C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage --- --- --- --- 100 -100 V(BR)DSS Drain-to-Source Breakdown Voltage V nA Conditions VGS = 0V, ID = 250A VDS = VGS, ID = 150A VGS = 20V VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance --- --- --- --- --- --- --- --- --- --- 120 29 35 85 20 60 55 57 6860 490 170 --- --- --- --- --- --- --- --- --- Crss Reverse Transfer Capacitance --- 220 --- Coss eff.(ER) Effective Output Capacitance (Energy Related) --- 570 --- VDD = 65V ID = 75A ns RG= 2.7 VGS = 10V VGS = 0V VDS = 50V pF = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 0V to 80V Coss eff.(TR) Effective Output Capacitance (Time Related) --- 920 --- VGS = 0V, VDS = 0V to 80V Min. Typ. Max. Units --- --- 127 --- --- 560 --- --- --- --- --- --- --- 40 49 58 89 2.5 1.3 --- --- --- --- --- Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time ID = 75A VDS = 50V nC VGS = 10V Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 75A,VGS = 0V TJ = 25C VDD = 85V ns TJ = 125C IF = 75A, TJ = 25C di/dt = 100A/s nC TJ = 125C A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.047mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. ISD 75A, di/dt 600A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately 90C. 2 2017-10-12 AUIRFS4310Z 1000 1000 100 BOTTOM 10 4.5V BOTTOM 100 4.5V 60s PULSE WIDTH Tj = 175C 60s PULSE WIDTH Tj = 25C 10 1 0.1 1 10 0.1 100 Fig. 1 Typical Output Characteristics 10 100 Fig. 2 Typical Output Characteristics 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current) 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 100 TJ = 175C 10 TJ = 25C 1 VDS = 50V 60s PULSE WIDTH 2.0 3.0 4.0 5.0 6.0 7.0 ID = 75A VGS = 10V 2.0 1.5 1.0 0.5 0.1 -60 -40 -20 8.0 20 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 10000 Coss = Cds + Cgd 8000 Ciss 6000 4000 Coss 2000 Crss ID= 75A VDS = 80V 16 VDS= 50V VDS= 20V 12 8 4 0 0 1 20 40 60 80 100 120 140 160 180 Fig. 4 Normalized On-Resistance vs. Temperature Fig. 3 Typical Transfer Characteristics 12000 0 TJ , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V 10 100 0 40 80 120 160 200 VDS , Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3 2017-10-12 AUIRFS4310Z 10000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 TJ = 175C 100 TJ = 25C 10 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 1msec 100 10msec 10 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 2.0 140 LIMITED BY PACKAGE ID, Drain Current (A) 120 100 80 60 40 20 0 50 75 100 125 150 10 100 Fig 8. Maximum Safe Operating Area V(BR)DSS , Drain-to-Source Breakdown Voltage Fig. 7 Typical Source-to-Drain Diode Forward Voltage 25 1 VDS , Drain-toSource Voltage (V) VSD , Source-to-Drain Voltage (V) 130 ID = 5mA 120 110 100 90 175 -60 -40 -20 TC, Case Temperature (C) 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 600 EAS, Single Pulse Avalanche Energy (mJ) 3.0 2.5 2.0 Energy (J) DC 0.1 0.1 1.5 1.0 0.5 ID 11A 19A BOTTOM 75A TOP 500 400 300 200 100 0 0.0 0 20 40 60 80 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 100sec 100 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) Fig 12. Maximum Avalanche Energy vs. Drain Current 2017-10-12 AUIRFS4310Z 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.10 0.1 J 0.05 0.02 R1 R1 J 1 0.01 0.01 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 C 4 Ci= iRi Ci= iRi SINGLE PULSE ( THERMAL RESPONSE ) Ri (C/W) I (sec) 0.018756 0.000007 0.159425 0.000117 0.320725 0.001817 0.101282 0.011735 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) Avalanche Current (A) Duty Cycle = Single Pulse 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Avalanche Current vs. Pulse width 140 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A EAR , Avalanche Energy (mJ) 120 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (C) Fig 15. Maximum Avalanche Energy vs. Temperature 5 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 13, 14). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 2017-10-12 AUIRFS4310Z 24 ID = 1.0A 4.0 ID = 1.0mA ID = 250A 3.5 20 ID = 150A 16 IRRM - (A) VGS(th) Gate threshold Voltage (V) 4.5 3.0 2.5 12 8 IF = 30A VR = 85V 2.0 4 1.5 TJ = 125C TJ = 25C 0 1.0 -75 -50 -25 0 25 50 75 100 200 300 400 500 600 700 800 900 1000 100 125 150 175 dif / dt - (A / s) TJ , Temperature ( C ) Fig. 17 - Typical Recovery Current vs. dif/dt 24 600 20 500 16 400 QRR - (nC) IRRM - (A) Fig 16. Threshold Voltage vs. Temperature 12 8 4 0 300 200 IF = 45A VR = 85V IF = 30A VR = 85V 100 TJ = 125C TJ = 25C TJ = 125C TJ = 25C 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / s) dif / dt - (A / s) Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt 600 500 QRR - (nC) 400 300 200 100 0 IF = 45A VR = 85V TJ = 125C TJ = 25C 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / s) Fig. 20 - Typical Stored Charge vs. dif/dt 6 2017-10-12 AUIRFS4310Z Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V tp L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 Fig 22a. Unclamped Inductive Test Circuit Fig 23a. Switching Time Test Circuit I AS Fig 22b. Unclamped Inductive Waveforms Fig 23b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 24a. Gate Charge Test Circuit 7 Qgd Qgodr Fig 24b. Gate Charge Waveform 2017-10-12 AUIRFS4310Z D2-Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2-Pak (TO-263AB) Part Marking Information Part Number AUIRFS4310Z YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code 8 2017-10-12 AUIRFS4310Z D2-Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 9 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 2017-10-12 AUIRFS4310Z Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level D2-Pak MSL1 Class M4 (+/- 800V) AEC-Q101-002 Class H2 (+/- 4000V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Highest passing voltage. Revision History Date Comments 12/04/2015 Updated datasheet with corporate template Corrected ordering table on page 1. 10/12/2017 Corrected typo error on part marking on page 8. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. 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