A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 100 mA 60 V
BVCEO IC = 100 mA 30 V
BVEBO IE = 50 mA 3.0 V
ICES VCE = 28 V 10 mA
hFE VCE = 5.0 V IC = 3.0 A 15 70 ---
PG
IMD
η
ηη
ηC
VCE = 24 V ICQ = 2 X 100 mA f = 960 MHz
POUT = 100 W
9.0
45
-32
dB
dBc
%
NPN SILICON RF POWER TRANSISTOR
CBSL100
DESCRIPTION:
The ASI CBSL100 is Designed for
Class AB, Cellular Base Station
Applications up to 960 MHz.
FEATURES:
• Internal Input/Output Matching Network
• PG = 9.0 dB at 100 W/ 960 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 25 A
VCBO 60 V
VCEO 30 V
VEBO 3.0 V
PDISS 310 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 0.6 °C/W
PACKAGE STYLE .400 BAL FLG (C)
ORDER CODE: ASI10585
MINIMUM
inches / m m
.380 / 9.65
.120 / 3.05
.780 / 19.81
B
C
D
E
F
G
A
MAXIMUM
.130 / 3.30
.820 / 20.83
.390 / 9.91
inches / m m
1.090 / 27.69
H
DIM
K
L
I
J
.003 / 0.08
.060 / 1.52
.007 / 0.18
.070 / 1.78
.205 / 5.21
N
M.850 / 21.59 .870 / 22.10
.220 / 5.59 .230 / 5.84
.435 / 11.05
.082 / 2.08 .100 / 2.54
.407 / 10.34.395 / 10.03
.080x45° A B
F G
H
I
JK
L
M
(4X).060 R
.1925
DC
E
FULL R
N
1.335 / 33.91 1.345 / 34.16
.210 / 5.33
