MUSES8920
-
1
-
Ver.10
High Quality Audio J-FET Input
Dual Operational Amplifier
■ GENERAL DESCRIPTION ■ PACKAGE OUTLINE
The MUSES8920 is a high quality audio J-FET input dual operational
amplifier, which is optimized for high-end audio, professional audio and
portable audio applications.
It is suitable for audio preamplifiers, active filters, and line amplifiers.
In addition, J-FET input type has advantage of the low input bias current,
it is suitable for transimpedance amplifier (I/V converter).
■ FEATURES
●Operating Voltage ±3.5V to ±17V
●Low Noise 8nV/√Hz typ.
●THD 0.0004% typ. (Av=1)
●Slew Rate 25V/µs typ.
●GBW 11MHz typ.
●High Output Current 100mA typ.(short-circuit current)
●J-FET Input
●Bipolar Technology
●Package Outline DIP8, SOP8 JEDEC 150mil
DFN8-X7 (ESON8-X7)(3.5mm x 4.0mm)
■ APPLICATIONS
● Portable Audio
● Home Audio
● Professional Audio
● Car Audio
MUSES and this logo are trademarks of New Japan Radio Co., Ltd.
DAC Output I/V converter + LPF circui
t
1. A OUTPUT
2. A -INPUT
3. A +INPUT
4. V-
5. B +INPUT
6. B -INPUT
7. B OUTPUT
8.V+
1
2
3
4
8
7
6
5
B
A
MUSES8920E
(SOP8 JEDEC 150mil (EMP8))
LPF
DA
Conv e r ter
I/V
I/V Buf f
Digital
Input
A
nalog
Output
Top View
1
2
3
4
8
7
6
5
B
A
1
2
3
4
8
7
6
5
Ex p o s e d
Pad
About Exposed Pad
Connect the Exposed Pad on the GND.
Bottom Vie
w
MUSES
8
9
20KX
7
(DFN8-X7 (ESON8-X7))
■PIN CONFIGLATION
MUSES8920D
(DIP8)
DIP8, SOP8 JEDEC 150mil
DFN
8
-X7 (ESON
-X7)
MUSES8920
-
2
-Ver.10
■ ABSOLUTE MAXIMUM RATING (Ta=25ºC unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Supply Voltage V+/V
-
±18 V
Differential Input Voltage Range VID ±30 V
Common Mode Input Voltage Range VICM ±15
(Note1
)
V
Power Dissipation PD
DIP8:870
SOP8:900 (Note2)
DFN8-X7: 690 (Note2)
2900 (Note3)
mW
Operating Temperature Range Topr -40 to +125 ºC
Storage Temperature Range Tstg -50 to +150 ºC
(Note1) For supply Voltages less than ±15 V, the maximum input voltage is equal to the Supply Voltage.
(Note2) Mounted on the EIA/JEDEC standard board (114.3×76.2×1.6mm, two layer, FR-4). DFN8 is connecting to GND in the center part on the back.
(Note3) EIA/JEDEC STANDARD Test board (76.2 x 114.3 x 1.6mm, 4layers, FR-4, Applying a thermal via hole to a board based on JEDEC standard JESD51-5)
mounting. The PAD connecting to GND in the center part on the back.
(Note4) NJM8920 is ESD (electrostatic discharge) sensitive device.
Therefore, proper ESD precautions are recommended to avoid permanent damage or loss of functionality.
■ RECOMMENDED OPERATING VOLTAGE (Ta=25ºC)
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Supply Voltage V+/V- ±3.5 - ±17 V
■ ELECTRICAL CHARACTERISTICS
● DC CHARACTERISTICS (V+/V-=±15V, Ta=25ºC, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Supply Current Icc RL=∞, No Signal - 9 12
mA
Input Offset Voltage VIO R
S=50Ω, - 0.8 5
mV
Input Bias Current IB - 5 250
pA
Input Offset Current IIO - 2 220
pA
Voltage Gain1 AV1 R
L=10kΩ, Vo=±13V 106 135 - dB
Voltage Gain2 AV2 R
L=2kΩ, Vo=±12.8V 105 133 - dB
Voltage Gain3 AV3 R
L=600Ω, Vo=12.5V 105 130 - dB
Common Mode Rejection Ratio CMR VICM=±12.5V (Note
5
)
80 110 - dB
Supply Voltage Rejection Ratio SVR V+/V
-
=±3.5 to ±17V (Note
6
)
80 110 - dB
Maximum Output Voltage1 VOM1 R
L=10kΩ ±13 ±14 - V
Maximum Output Voltage2 VOM2 R
L=2kΩ ±12.8 ±13.8 - V
Maximum Output Voltage3 VOM3 R
L=600Ω ±12.5 ±13.5 - V
Common Mode Input Voltage Range VICM CMR≥80dB ±12.5 ±14 - V
(Note5) CMR is calculated by specified change in offset voltage. (VICM=0V to +12.5V, VICM=0V to -12.5V)
(Note6) SVR is calculated by specified change in offset voltage. (V+/V-=±3.5 to ±17V)
● AC CHARACTERISTICS (V+/V-=±15V, Ta=25ºC, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gain Bandwidth Product GB f=10kHz - 11 -
MHz
Unity Gain Frequency fT A
V=+100, RS=100Ω, RL=2kΩ, CL=10pF - 10 -
MHz
Phase Margin ΦM A
V=+100, RS=100Ω, RL=2kΩ, CL=10pF - 70 -
Deg
Equivalent Input Noise Voltage1 VNI1 f=1kHz - 8 -
nV/√Hz
Equivalent Input Noise Voltage2 VNI2 RIAA, RS=2.2kΩ, 30kHz, LPF (Note7
)
- 1.1 3.5
μVrms
Equivalent Input Noise Voltage3 VNI3 f=20 to 20kHz (Note8
)
- 1.1 -
μVrms
Total Harmonic Distortion THD f=1kHz , AV=+10, Vo=5Vrms, RL=2kΩ - 0.0004 - %
Channel Separation CS f=1kHz , AV=-100, RL=2kΩ - 150 - dB
Slew Rate SR AV=1, VIN=2Vp-p, RL=2kΩ, CL=10pF - 25 -
V/us
(Note7) DIP8 and SOP8
(Note8) DFN8-X7
MUSES8920
-
3
-
Ver.10
■ POWER DISSIPATION vs. AMBIENT TEMPERATURE
IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called Power
Dissipation PD. The dependence of the MUSES8920 PD on ambient temperature is shown in Fig 1. The plots are depended on
following two points. The first is PD on ambient temperature 25ºC, which is the maximum power dissipation. The second is 0W,
which means that the IC cannot radiate any more. Conforming the maximum junction temperature Tjmax to the storage
temperature Tstg derives this point. Fig.1 is drawn by connecting those points and conforming the PD lower than 25ºC to it on
25ºC. The PD is shown following formula as a function of the ambient temperature between those points.
Dissipation Power [W] (Ta=25ºC to Ta=150ºC)
Where, ja is heat thermal resistance which depends on parameters such as package material, frame material and so on.
Therefore, PD is different in each package.
While, the actual measurement of dissipation power on MUSES8920 is obtained using following equation.
(Actual Dissipation Power) = (Supply Current Icc) X (Supply Voltage V+– V-) – (Output Power Po)
The MUSES8920 should be operated in lower than PD of the actual dissipation power.
To sustain the steady state operation, take account of the Dissipation Power and thermal design.
Fig 1
Tjmax - Ta
ja
P
D
=
0
500
1000
1500
2000
2500
3000
0 50 100 150
Power Dissipation Pd [mW]
Ambient Temperature Ta [˚C]
DFN8-X7 4layers
DFN8-X7 2layers
SOP8
DIP8
MUSES8920
-
4
-Ver.10
■ PACKAGE OUTLINE (DFN8-X7)
MUSES8920
-
5
-
Ver.10
■ TYPICAL CARACTERISTICS
Channel Separation vs. Frequency
V
+
/V
-
=±15V, A
V
=-100, R
L
=2kΩ, Ta=25ºC
-160
-155
-150
-145
-140
-135
-130
-125
-120
10 100 1k 10k 100k
Frequency [Hz]
Channel Separation [dB]
Gain vs. Frequency
(Temperature)
V
+
/V
-
=±15V, A
V
=+100, R
L
=2kΩ, C
L
=10pF
-60
-40
-20
0
20
40
60
10k 100k 1M 10M 100M
Frequency [Hz]
Voltage Gain [dB]
-180
-135
-90
-45
0
Phase [deg]
Gain
Phase Ta=-40ºC
Ta=+25ºC
Ta=-40ºCTa=+25ºC
Ta=+85ºC
Ta=+85ºC
Voltage Noise vs. Frequency
V
+
/V
-
=±15V, A
V
=+100, R
S
=100Ω, R
L
=, Ta=25ºC
0
20
40
60
80
100
1 10 100 1k 10k 100k
Frequency [Hz]
Equivalent Input Noise Voltage
[nV/Hz]
Phase Margin vs. Temperature
(Supply Voltage)
V
+
/V
-
=±15V, A
V
=+100, R
S
=100Ω, R
L
=2kΩ, C
L
=10pF, V
IN
=-30dBm
60
70
80
90
-50 -25 0 25 50 75 100 125 150
Ambient Temperature [ºC]
Phase Margin [deg]
V
+
/V
-
=±15V
V
+
/V
-
=±3.5V
THD+N vs. Output Voltage
(Frequency)
V
+
/V
-
=±15V, A
V
=+10, R
L
=2k, Ta=25ºC
0.0001
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100
Output Voltage [Vrms]
THD+N [%]
f=20kHz
f=20kHz
f=1kHz
THD+N vs. Output Voltage
(Frequency)
V
+
/V
-
=±3.5V, A
V
=+10, R
L
=2k, Ta=25ºC
0.0001
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100
Output Voltage [Vrms]
THD+N [%]
f=20kHz
f=1kHz
f=20Hz
MUSES8920
-
6
-Ver.10
■ TYPICAL CARACTERISTICS
Pulse Response
V
+
/V
-
=±15V, Gv=0dB, C
L
=10pF, R
L
=2kΩ, Ta=25ºC
Time [1μs/div]
Voltage [1V/div]
Input
Output
Slew Rate vs. Temperature
V
+
/V
-
=±15V, V
IN
=2V
P-P
, f=100kHz, Gv=0dB, C
L
=10pF, R
L
=2kΩ
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
Ambient Temperature [ºC]
Slew Rate [V/μs]
Rise
Fall
Supply Current vs. Supply Voltage
(Temperature)
A
V
=0dB
0
2
4
6
8
10
12
±0 ±4 ±8 ±12 ±16
Supply Voltage V
+
/V
-
[V]
Supply Current [mA]
Ta=-40ºC
Ta=+85ºC
Ta=+25ºC
Supply Current vs. Temperature
(Supply Voltage)
A
V
=0dB
0
2
4
6
8
10
12
-50 -25 0 25 50 75 100 125 150
Ambient Temperature [ºC]
Supply Current [mA]
V
+
/V
-
=±3.5V
V
+
/V
-
=±15V
Input Offset Voltage vs. Temperature
(Supply Voltage)
V
ICM
=0V, V
IN
=0V
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125 150
Ambient Temperature [ºC]
Input Offset Voltage [mV]
V
+
/V
-
=±15V
V
+
/V
-
=±3.5V
Input Offset Voltage vs. Supply Voltage
(Temperature)
V
ICM
=0V, V
IN
=0V
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
0 ±4 ±8 ±12 ±16
Supply Voltage V
+
/V
-
[V]
Input Offset Voltage [mV]
Ta=-40ºC
Ta=+25ºC
Ta=+85ºC
MUSES8920
-
7
-
Ver.10
■ TYPICAL CARACTERISTICS
Input Bias Current vs. Temperature
(Supply Voltage)
V
ICM
=0V, V
+
/V
-
=±15V
1p
10p
100p
1n
10n
100n
1000n
-50 -25 0 25 50 75 100 125 150
Ambient Temperature [ºC]
Input Bias Current [A]
CMR vs. Temperature
V
+
/V
-
=±15V
80
90
100
110
120
130
140
-50 -25 0 25 50 75 100 125 150
Ambient Temperature [ºC]
Common Mode Rejection Ratio [dB]
V
ICM
=-12.5V0V
V
ICM
=0V+12.5V
SVR vs. Temperature
V
ICM
=0V, V
+
/V
-
=±3.5V±16V
80
90
100
110
120
130
140
-50 -25 0 25 50 75 100 125 150
Ambient Temperature [ºC]
Supply Voltage Rejection Ratio [dB]
Input Bias Current vs. Common Mode Input Voltage
(Temperature)
V
+
/V
-
=±15V, Ta=25ºC
3
4
5
6
7
8
9
10
-15 -10 -5 0 5 10 15
Common Mode Input Voltage [V]
Input Bias Current [pA]
Input Offset Voltage
vs. Common Mode Input Voltage
(Temperature)
V
+
/V
-
=±15V
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
-15 -10 -5 0 5 10 15
Common Mode Input Voltage [V]
Input Offset Voltage [mV]
Ta=-40ºC
Ta=+25ºC
Ta=+85ºC
Input Offset Voltage
vs. Common Mode Input Voltage
(Temperature)
V
+
/V
-
=±3.5V
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
-4 -3 -2 -1 0 1 2 3 4
Common Mode Input Voltage [V]
Input Offset Voltage [mV]
Ta=-40ºC
Ta=+25ºC
Ta=+85ºC
MUSES8920
-
8
-Ver.10
■ TYPICAL CARACTERISTICS
Maximum Output Voltage vs. Load Resistance
(Temperature)
V
+
/V
-
=±15V, Gv=open, R
L
to 0V
-15
-10
-5
0
5
10
15
10 100 1k 10k 100k
Load Resistance [Ω]
Maximum Output Voltage [V]
Ta=-40ºC
Ta=+25ºC
Ta=+85ºC
Maximum Output Voltage vs. Load Resistance
(Temperature)
V
+
/V
-
=±3.5V, Gv=open, R
L
to 0V
-4
-3
-2
-1
0
1
2
3
4
10 100 1k 10k 100k
Load Resistance [Ω]
Maximum Output Voltage [V]
Ta=+25ºC
Ta=-40ºC
Ta=+85ºC
Output Voltage vs. Output Current
(Temperature)
V
+
/V
-
=±15V
-15
-10
-5
0
5
10
15
1 10 100 1k
Output Current [mA]
Output Voltage [V]
Isink
Isource
Ta=+85ºC
Ta=+25ºC
Ta=-40ºC
Ta=+85ºC
Ta=+25ºC Ta=-40ºC
Output Voltage vs. Output Current
(Temperature)
V
+
/V
-
=±3.5V
-4
-3
-2
-1
0
1
2
3
4
1 10 100 1k
Output Current [mA]
Output Voltage [V]
Isink
Isource
Ta=+25ºC
Ta=-40ºC
Ta=+125ºC
MUSES8920
-
9
-
Ver.10
■ APPLICATION CIRCUIT
■ NOTE
Precaution for counterfeit semiconductor products
We have recently detected many counterfeit semiconductor products that have very similar appearances to our operational
amplifier “MUSES” in the world-wide market.In most cases, it is hard to distinguish them from our regular products by their
appearance, and some of them have very poor quality and performance.
They can not provide equivalent quality of our regular product, and they may cause breakdowns or malfunctions if used in your
systems or applications.
We would like our customers to purchase “MUSES” through our official sales channels : our sales branches, sales
subsidiaries and distributors.
Please note that we hold no responsibilities for any malfunctions or damages caused by using counterfeit products. We would
appreciate your understanding.
<CAUTION>
The specifications on this data book are only given for information,
without any guarantee as regards either mistakes or omissions. The
application circuits in this data book are described only to show
representative usages of the product and not intended for the
guarantee or permission of any right including the industrial rights.
Buf f
A
tt
Gain Stage
AD
Converter
A
nalog
Input Dig ital
Output
(Fig.1: ADC Input)
LPF
DA
Converter
I/V
I/V Buff
Digital
Input
A
nalog
Output
(Fig.2:DAC Output)
(Fig.3: Half Vcc Buffer on Single Supply Application) (Fig.
4
:DAC LPF Circuit )
Vcc
L-ch.
A
nalog
Output
R-ch.
A
nalog
Output
R-ch.
Analog
Intput
L-ch.
Analog
Intput
1/2Vcc
1/2Vcc
DAC
HPF
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
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MUSES8920D MUSES8920E