iSAMSUNG SEMICONDUCTOR INC KSD1692 HIGH DC.CURRENT GA LOW COLLECTOR SATURATION VOLTAGE BUILTIN A DAMPER-DIODE AT E-C HIGH POWER DISSIPATION : PT = 1.3W (T,=25C) ABSOLUTE MAXIMUM RATINGS (T,=25C) L4E D B eseur4e 0007641 4 i NPN SILICON DARLINGTON TRANSISTOR IN Characteristic - | Symbol Rating Unit Collector-Base Voitage Veeo 150 v Collector-Emitter Voltage Vceo 100 Vv Emitter-Base Voltage Veso 8 Vv Collector Current (DC). ic 3 A *Collector Current (Pulse) Io 5 A Collector Dissipation (Ta=25C) Pe 13 Ww Coilector Dissipation (T.=25C) Po 16 Ww Junction Temperature Tj 150 C Storage Temperature Tstg 55~-150 C * PW<10 mS duty cycle < 50% T+ 33-29 10-126 1. Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS (Ta =25C) Characteristic . Symbol Test Condition Min Typ Max Unit Collector Cutoff Current lego Vea=100V, lk=0 -10 pA Emitter Cutoff Current leBo Ves=5V, Ic=0 . 2 mA *DC Current Gain res Vee=2V, lo=1.5A 2000 20000 brea Vce=2V, Ic=3A 1000 * Collector-Emitter Saturation Voltage | Vce(sat) c= 1.5A, lp=1.5mMA 0.9 4.2 v * Base-Emitter Saturation Voltage Vee(sat) | Ic=1.5A, fb=1.5mMA 1.5 |- 2 Vv Tum On Time , ton - Ib=1.5A, Ia: = leo =1.5MA 0.5 ps Storage Time ota RL=272, Vec=40V - 2 uS Fall Time t 1 pS hee (1) CLASSIFICATION * Pulse test: PW < 350uys, duty cycle < 2% Pulsed Classification 0 Y G he 1 2000-5000 4000-12000 6000-20000 cf SAMSUNG SEMICONDUCTOR 206SAMSUNG SEMICONDUCTOR INC | _14E 0 ff 2%64142 ooo7E32 & KSD1692 NPN SILICON DARLINGTON TRANSISTOR a as . . C T-33-29 POWER DERATING . DERATING CURVE OF ~ SAFE OPERATING AREAS = g E = FH 3 3 a & & = 2 a 6 = = e . a 30 Foo 150 200 , 50 400 160 200 Te{Ch, CASE TEMPERATURE To{*C}; CASE TEMPERATURE FORWARD BIAS SAFE OPERATING AREA STATIC CHARACTERISTIC 10 8 . 2 5 & w < 3 3 os < & 5 e 5 c| 4 4 2 3 8 o 84 2 z 3 3 1 0.02 Sigle Puse 1 2@ 10 20 50 100 200 600 1000 tT. 2 3 4 5 Veei}, COLLECTOR-EMITTER VOLTAGE Vox (Vi, COLLECTOR-EMITTER VOLTAGE DG CURRENT GAIN COLLCETOR-EMITTER SATURATION VOLTAGE ~ - . BASE-EMITTER SATURATION VOLTAGE 100,000 g - 3 > - z z 3 10,000 2 2 z 8 5 6,000 E = b 3 2 2 7, i 3 g 05 o2 ot 0.01002 0.05 0.1 02 O58 1 2 6 Ww 0.01 0.02 0.06 0.1 62 O68 Tf 2 5 10 L{A), COLLECTOR CURRENT * fetA}, COLLECTOR CURRENT 58 samsune SEMICONDUCTOR 207sams ied eta, "SAMSUNG SEMICONOUCTOR INC HIGH POWER DISSIPATION : PT = 1.3W (T, = 25C) KSD1693 LYE D escsta2 0007433 & i NPN SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT. GAIN LOW COLLECTOR SATURATION. VOLTAGE BUILT-IN A ZENER DIODE AT B-C AND A DAMPER DIODE AT E-C ABSOLUTE MAXIMUM RATINGS (T. a= 25C) # 1-33-29 _ 10-126 1. Emitter 2. Collector 3 Base * PWE10mS, duty cycle<50% _ Characteristic Symbol .Rating Unit Collector-Base Voltage Veo 60+10 Vv Collector-Emitter Voitage Veeo 60410 v Emitter-Base Voltage - Vepo 8 Ve Collector Current (DC) Io . 8 A "Collector Current (Pulse) lb + 6 A Collector Dissipation (T,=25C) Pc 1.3 WwW Collector Dissipation (T.= 25C) Po 15 WwW Junction. Temperature T] 150 C Storage Temperature Tstg 66~1560 C ELECTRICAL CHARACTERISTICS (Ta =25C) Characterlstle Symbol Test Condition Min Typ Max Unk Collector-Base Voltage Veao p= 1mA, fe=0 50 | 60 7o| Collctor-Emitter Voltage Veco ls=10mA, Regs co 50 60 70 v Collector Cutoff Current kso Vca=40V, le=0 10 | pA Emitter Cutoff Current lipo Ves5V, b=0 ' 2 mA *DC Current Gain | Dees. Vee=2V, lo=1.5A 2000 20000 |- - hrez Vce=2V, lc=3A 1000 * Collector-Emitfer Saturation Voltage Vee(sat) k=1.5A, l=1.5mA 0.9 1.2 Vv * Base-Emitter Saturation Voltage Voee(sat) bo 1.5A, la 1.5mA 1.5 2/]-Vv Turn On Time. ton b= 1.5A, l= leg = 1.5mA 0.5 ps Storage Time * tig Ri=270, Veom40V r 2 us. Fall Time ; t 1 us * Pulse test: PW < 350zs, duty cycle < 2% Puleed hre (1) CLASSIFICATION Classification Y - @- Ree 1 2000-5000 4000-12000 6000-20000 Ri=8 ko o R2=0,6 kQ* - . . 208 SAMSUNG SEMICONDUCTORSAMSUNG SEMICONDUCTOR INC nue 0 ff 2abur42 ooo7.34 Tt &f KSD1693 NPN SILICON DARLINGTON TRANSISTOR: | 7-33-29 a POWER OERATING | DERATING. CURVE OF SAFE OPERATING AREAS 70%), be, BERATING Po(W), POWER DISSIPATION 100 160 200 60 100 1 Tof*C). CASE TEMPERATURE Te{*C), CASE TEMPERATURE . FORWARD BIAS SAFE OPERATING AREA . , STATIC CHARACTERISTIC 3 | 5 , 5 3 o e 2 5 4 i 8 8 $ ; 2 {0 . 100 1 2 3. s. 6 Vex (), COLLECTOR-EMITTER VOLTAGE Vee(V}, COLLECTOR-EMITTER VOLTAGE DC CURRENT GAIN . COLLCETOR-EMITTER SATURATION VOLTAGE . BASE-EMITTER SATURATION VOLTAGE 3 5 3 > > =X 10,000 5 5 3 E y 6,000 Pp ES a 3 2,000 : 3 2 . z 0.8 > o2 - O41 0.01 0.02 6.05 01 0.2 0.6. 1 2 6 16 . 0.05 0.1 05 1, 2 6 10 ketA, COLLECTOR CURRENT . . le{A}, COLLECTOR CURRENT ce SAMSUNG SEMICONDUCTOR 209vue 0 Pf zac4n42 ooowas 1 &f NPN TRIPLE DIFFUSED KSD5000 8 PLANAR SILICON TRANSISTOR T- 73-43 7 SAMSUNG SEMICONDUCTOR INC i COLOR TV HORIZONTAL OUTPUT APPLICATIONS (DAMPER DIODE BUILT iN) TO-3P HIGH Collactor-Base Voltage Veao =1500V ABSOLUTE MAXIMUM RATINGS (T,=25C) Characteristic Symbol Rating Unit Collector-Base Voltage | Veso 1500 Vv Collector-Emitter Voltage Vceo 800 Vv Emitter-Base Voltage Veo 7 Vv Collector Current Io 2.5 A Collector Current (Peak) le 10 A Collector Dissipation.(Te=25C) Pe 80 Ww Junction Temperature . Tj 160 C Storage Temperature ~ . Tstg - -85~150 C 1. Base 2, Collector 3. Emitter ELECTRICAL CHARACTERISTICS (T,=25C) Characteristic Symbol Test Condition -} Min Typ Max |. Unit Collector Cutoff Current Iso Vea=800V, le=0 10 pA Emitter Cutoff Current . leso Veg=4V, lc=O 40 130 mA DC Current Gain hee Voe=8V, le=0.5A 8] Collector Emitter Saturation Voitage | Vce(sat) k=2A, l=0.64 8 Vv Base Emitter Saturation Voltage Vae(sat) | Ic=2A, Ip=0.6A 1.6 Vv . Current Gain Bandwidth Product fr Vee=10V, lc=0.5A . 3 MHz | Damper Diode Tum On Voltage a 2.58 2 v Fall Time t k=2A, lat =0.6A 0.4 pS Is2=1.2A, Voc=200V RL=1002 Cc Bo > 500 (TYP) _ E . rH SAMSUNG SEMICONDUCTOR 210" fs_SAMSUNG SEMICONDUCTOR INC - LYE om Bene Oo0076348 3 i CT rere n= " NPN TRIP VIFFUSED KSD5000 | PLANAR SILICON TRANSISTOR so T= 33-\3 STATIC CHARACTERISTIC BASE-EMITTER ON. VOLTAGE ic(A), COLLECTOR CURRENT IgA), COLLECTOR CURRENT 2 4 6 a 10 a2 04 ~0.6 1,0 1.2 1.4 1.6 ~ + * Ves{}, COLLECTOR-EMITTER VOLTAGE Vee{V), SASE-EMITTER VOLTAGE DC GURRENT GAIN COLLECTOR*EMITTER SATURATION VOLTAGE . Ei bq, OC CURRENT GAIN 2 is 9 Voe{satX), COLLECTOR-EMITTER, SATURATION VOLTAGE 0.2. Os 1 2 +5 10 or 0.2 0.5 1 2 6 10 IefA) COLLECTOR CURRENT ic{Ah COLLECTOR CURRENT TURN ON TIME . SAFE OPERATING AREA f ; BH d oe 2 & 10 20 60 100 200 500 1000 VeatV), COLLEGTOR-EMITTER VOLTAGE t5 samsuna SEMICONDUCTOR . . aitSAMSUNG SEMICONDUCTCR INC = LYE Besse OO00?b3? Sp NPN TRIPLE DIFFUSED KSD5000 | 7 PLANAR SILICON TRANSISTOR = 33-13 REVERSE BIAS SAFE OPERATING AREA . POWER DERATING 40 bcfA), COLLECTOR CURRENT . Pp(W), POWER DISSIPATION so a 20 0.2 tat Of 10 20 50 100 200 800 1,000. 2,000. 6,000 19,000 25 50 75 100 125 150 175 206 226 250 . VeelV), COLLECTOR-EMITTER VOLTAGE T.{*C), CASE TEMPERATURE ase SAMSUNG SEMICONDUCTOR 212