SD1420-01
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The SD1420-01 is a gold metallized epitaxial silicon NPN planar
transistor designed for high-linearity Class A operation Cellular Base
Station applications. The SD1420-01 is also available in a stud
package as the SD1420.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 28 V
VEBO Emitter-Base Voltage 3.5 V
IC Device Current .250 A
PDISS Power Dissipation 7 W
TJ Junction Temperature + 200 °°C
TSTG Storage Temperature –55 to +150 °°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 20 °°C/W
FeaturesFeatures
• 860 – 960 MHz
• 24 VOLTS
• COMMON EMITTER
• GOLD METALLIZATION
• CLASS A LINEAR OPERATION
• POUT = 0.9 W MIN.
• 9.5 dB GAIN
RF AND MICROWAVE TRANSISTORS
800-900 MHz BASE STATION APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
SD1420-01
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATIC Value
Symbol Test Conditions Min. Typ. Max. Units
BVCBO IC = 1 mA 40 V
BVCEO IC = 1 mA 28 V
BVEBO IE = 1 mA 3.5 V
ICES VCB = 24 V .5 mA
hFE VCE = 5 V IC = .1 A 20 120
DYNAMIC Value
Symbol Test Conditions Min. Typ. Max. Units
POUT f = 960 MHz VCE = 24 V ICQ = 200 mA 2.1 W
GP f = 960 MHz VCE = 24 V ICQ = 125 mA 8.9 9.0 dB
COB f = 1 MHz VCB = 28 V 5.0 pF
SD1420-01
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
