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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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FDMC86183 N-Channel Shielded Gate PowerTrench(R) MOSFET 100 V, 47 A, 12.8 m Features General Description Shielded Gate MOSFET Technology This N-Channel MV MOSFET is produced using ON Semiconductor's advanced PowerTrench(R) process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode. Max rDS(on) = 12.8 m at VGS = 10 V, ID = 16 A Max rDS(on) = 34.6 m at VGS = 6 V, ID = 8 A 50% Lower Qrr than Other MOSFET Suppliers Lowers Switching Noise/EMI Applications MSL1 Robust Package Design 100% UIL Tested Primary DC-DC MOSFET RoHS Compliant Synchronous Rectifier in DC-DC and AC-DC Motor Drive Solar Pin 1 Pin 1 S D Top D D S S S D S D S D G D G D Bottom Power 33 MOSFET Maximum Ratings TA = 25 C unless otherwise noted. Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID TC = 25 C -Continuous TC = 100 C -Continuous TA = 25 C -Pulsed Single Pulse Avalanche Energy EAS PD TJ, TSTG (Note 5) TC = 25 C Power Dissipation TA = 25 C Units V 20 V 47 (Note 5) 29 (Note 1a) 9.7 (Note 4) 189 (Note 3) Power Dissipation Ratings 100 96 52 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 A mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case 2.4 RJA Thermal Resistance, Junction to Ambient (Note 1a) 53 C/W Package Marking and Ordering Information Device Marking FDMC86183 Device FDMC86183 Package Power 33 Semiconductor Components Industries, LLC, 2016 December, 2016, Rev. 1.0 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units Publication Order Number: FDMC86183/D 1 FDMC86183 N-Channel Shielded Gate PowerTrench(R) MOSFET www.onsemi.com Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 A IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 4.0 V 100 V 63 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 90 A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 90 A, referenced to 25 C VGS = 10 V, ID = 16 A 11 12.8 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 8 A 18 34.6 VGS = 10 V, ID = 16 A, TJ = 125 C 18 21 VDS = 5 V, ID = 16 A 20 gFS Forward Transconductance 2.0 3.2 -8 mV/C m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 0.1 1080 1515 646 905 pF pF 10 15 pF 0.5 1.5 Switching Characteristics td(on) Turn-On Delay Time 11 20 ns tr Rise Time 3 10 ns td(off) Turn-Off Delay Time 15 27 ns tf Fall Time 3 10 ns nC VDD = 50 V, ID = 16 A, VGS = 10 V, RGEN = 6 Qg Total Gate Charge VGS = 0 V to 10 V 15 21 Qg Total Gate Charge VGS = 0 V to 6 V 10 14 Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge Qoss Output Charge VDD = 50 V, ID = 16 A VDD = 50 V, VGS = 0 V nC 5 nC 3.4 nC 43 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 16 A (Note 2) 0.9 1.3 IF = 8 A, di/dt = 300 A/s IF = 8 A, di/dt = 1000 A/s V 22 36 ns 36 58 nC 18 33 ns 79 127 nC Notes: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RCA is determined by the user's board design. a. 53 C/W when mounted on a 1 in2 pad of 2 oz copper b. 125 C/W when mounted on a minimum pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. EAS of 96 mJ is based on starting TJ = 25 C; N-ch: L = 3 mH, IAS = 8 A, VDD = 100 V, VGS =10 V. 100% test at L = 0.3 mH, IAS = 18 A. 4. Pulsed Id please refer to Fig 11 SOA graph for more details. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. www.onsemi.com 2 FDMC86183 N-Channel Shielded Gate PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted. 100 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 7 V ID, DRAIN CURRENT (A) 80 VGS = 6.5 V 60 VGS = 6 V 40 VGS = 5.5 V 20 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 5.5 V 4 VGS = 6 V 3 VGS = 6.5 V 2 VGS = 7 V 1 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 5 0 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 80 100 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 2.0 60 ID = 16 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 1.4 1.2 1.0 0.8 0.6 -75 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 50 ID = 16 A 40 30 TJ = 125 oC 20 10 TJ = 25 oC 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs. Junction Temperature Figure 4. On-Resistance vs. Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 100 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 80 ID, DRAIN CURRENT (A) VGS = 10 V VDS = 5 V 60 40 TJ = 150 oC TJ = 25 oC 20 TJ = -55 oC 0 2 3 4 5 6 7 8 9 VGS = 0 V 10 1 0.1 TJ = 150 oC 0.01 TJ = -55 oC 0.001 0.0 10 TJ = 25 oC 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.2 FDMC86183 N-Channel Shielded Gate PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted. 5000 ID = 16 A Ciss VDD = 50 V 1000 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 25 V 6 VDD = 75 V 4 Coss 100 10 2 f = 1 MHz VGS = 0 V 0 0 4 8 12 16 Crss 1 0.1 20 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage 50 50 o ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) RJC = 2.4 C/W TJ = 25 oC 10 TJ = 100 oC TJ = 125 1 0.01 0.1 oC 1 10 40 VGS = 10 V 30 20 VGS = 6 V 10 0 25 100 50 150 P(PK), PEAK TRANSIENT POWER (W) 10000 100 ID, DRAIN CURRENT (A) 125 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 300 10 s THIS AREA IS LIMITED BY rDS(on) 100 s SINGLE PULSE TJ = MAX RATED RJC = 2.4 oC/W o TC = 25 C 1 1 ms CURVE BENT TO MEASURED DATA 10 10 ms 100 ms 100 SINGLE PULSE RJC = 2.4 oC/W TC = 25 oC 1000 10 0.1 0.1 100 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 1 75 o tAV, TIME IN AVALANCHE (ms) 100 500 10 -5 10 -4 10 -3 10 -2 10 -1 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 1 FDMC86183 N-Channel Shielded Gate PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: 0.01 0.005 -5 10 ZJC(t) = r(t) x RJC RJC = 2.4 oC/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE -4 10 -3 -2 10 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 5 -1 10 1 FDMC86183 N-Channel Shielded Gate PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted. 3.40 3.20 PKG CL 8 2.37 MIN A (0.45) 8 B 5 PKG CL 3.40 3.20 PKG CL SYM CL 5 2.15 MIN (0.40) (0.65) 0.70 MIN PIN 1 INDICATOR 1 4 1 4 0.65 1.95 SEE DETAIL A 0.65 1 LAND PATTERN RECOMMENDATION 0.10 C 1.95 0.10 C A B 0.37 (8X) 0.27 0.42 MIN (8X) 4 0.60 0.40 0.80 0.70 0.08 C 0.25 0.15 0.05 0.00 C SEATING PLANE PKG CL 1.99 1.79 SCALE: 2X NOTES: UNLESS OTHERWISE SPECIFIED (0.34) (0.52 TYP) 8 5 (2.27) (0.33) TYP A) PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. BA, B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) DRAWING FILE NAME: MKT-PQFN08SREV1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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