Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS -20V
▼ 2.5V Gate Drive Capability RDS(ON) 150mΩ
▼ Fast Switching Characteristic ID -10A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 5.0 ℃/W
Rthj-a 62.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data and specifications subject to change without notice
RoHS-compliant Product
1
AP3310GH/J-HF
Rating
- 20
+12
-10
0.01
Continuous Drain Current, VGS @ 4.5V -6.2
Pulsed Drain Current1-24
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
25
-55 to 150
200902096
-55 to 150
Linear Derating Factor
Thermal Data
Parameter
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
A
dvanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
G
D
S
GDSTO-252(H)
GDSTO-251(J)
This device is suited for low voltage and battery power applications.
AP3310GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=-4.5V, ID=-2.8A - - 150 mΩ
VGS=-2.5V, ID=-2.0A - - 250 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - - V
gfs Forward Transconductance VDS=-5V, ID=-2.8A - 4.4 - S
IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=125oC) VDS=-16V, VGS=0V - - -250 uA
IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=-2.8A - 6 - nC
Qgs Gate-Source Charge VDS=-6V - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-5V - 0.6 - nC
td(on) Turn-on Delay Time2VDS=-6V - 25 - ns
trRise Time ID=-1A - 60 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=-5V - 70 - ns
tfFall Time RD=6Ω-60-ns
Ciss Input Capacitance VGS=0V - 300 - pF
Coss Output Capacitance VDS=-6V - 180 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -10 A
ISM Pulsed Source Current ( Body Diode )1- - -24 A
VSD Forward On Voltage2Tj=25℃, IS=-10A, VGS=0V - - -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
3.Surface mounted on 1 in2 copper pad of FR4 board
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
AP3310GH/J-HF
0
6
12
18
24
0.0 2.5 5.0 7.5 10.0
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25oC -4.5V
-4.0V
-3.5V
-3.0V
-2.5V
VGS = -2.0V
0
5
10
15
20
02468
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=150oC -4.5V
-4.0V
-3.5V
-3.0V
-2.5V
VGS = -2.0V
0.6
0.9
1.2
1.5
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D= -2.8A
VGS = -4.5V
0
200
400
600
800
0246810
-VGS (V)
RDS(ON) (m
Ω
)
ID= -2.8A
TC=25oC
AP3310GH/J-HF
Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
4
0
2
4
6
8
10
25 50 75 100 125 150
Tc , Case Temperature ( oC)
-ID , Drain Current (A)
0
5
10
15
20
25
30
0 50 100 150
Tc , Case Temperature ( oC)
PD (W)
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Thermal Response (Rthjc)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
1
10
100
1 10 100
-VDS (V)
-ID (A)
TC=25°C
Single Pulse
1ms
10ms
100ms
D
C
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
5
AP3310GH/J-HF
0
1
2
3
4
5
02468
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID=-2.8A
VDS=-6V
10
100
1000
135791113
-VDS (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
0
1
10
0.3 0.5 0.7 0.9 1.1 1.3 1.5
-VSD (V)
-IS(A)
Tj=25 oCTj=150 oC
0
0.5
1
1.5
-50 0 50 100 150
Tj, Junction Temperature ( oC)
-VGS(th) (V)
AP3310GH/J-HF
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
6
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
QGS QGD
QG
Charge
0.3 x RATED VDS
TO THE
OSCILLOSCOPE
-5 V
D
G
S
VDS
VGS
RG
RD
0.3 x RATED VDS
TO THE
OSCILLOSCOPE
D
G
S
VDS
VGS
ID
IG
-1~-3mA
-5V
