AP3310GH/J-HF RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D 2.5V Gate Drive Capability BVDSS -20V RDS(ON) 150m ID Fast Switching Characteristic G -10A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-252(H) This device is suited for low voltage and battery power applications. G D TO-251(J) S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage - 20 V VGS Gate-Source Voltage +12 V ID@TC=25 Continuous Drain Current, VGS @ 4.5V -10 A ID@TC=100 Continuous Drain Current, VGS @ 4.5V -6.2 A 1 IDM Pulsed Drain Current -24 A PD@TC=25 Total Power Dissipation 25 W Linear Derating Factor 0.01 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 3 Value Units 5.0 /W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W Data and specifications subject to change without notice 1 200902096 AP3310GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS=0V, ID=-250uA Static Drain-Source On-Resistance 2 Min. Typ. Max. Units -20 - - V - -0.1 - V/ VGS=-4.5V, ID=-2.8A - - 150 m VGS=-2.5V, ID=-2.0A - - 250 m -0.5 - - V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-5V, ID=-2.8A - 4.4 - S IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (T j=125 C) VDS=-16V, VGS=0V - - -250 uA Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA ID=-2.8A - 6 - nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-6V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-5V - 0.6 - nC VDS=-6V - 25 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 60 - ns td(off) Turn-off Delay Time RG=6,VGS=-5V - 70 - ns tf Fall Time RD=6 - 60 - ns Ciss Input Capacitance VGS=0V - 300 - pF Coss Output Capacitance VDS=-6V - 180 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=-1.2V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 1 2 Forward On Voltage Tj=25, IS=-10A, VGS=0V Min. Typ. Max. Units - - -10 A - - -24 A - - -1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP3310GH/J-HF 24 20 -4.5V o T C =150 o C -4.0V 18 -ID , Drain Current (A) -ID , Drain Current (A) T C =25 C -3.5V 12 -3.0V 6 -4.5V -4.0V 15 -3.5V 10 -3.0V -2.5V 5 -2.5V V GS = -2.0V V GS = -2.0V 0 0 0.0 2.5 5.0 7.5 10.0 0 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 4 6 8 Fig 2. Typical Output Characteristics 1.8 800 I D = -2.8A I D = -2.8A V GS = -4.5V Normalized R DS(ON) T C =25 o C 600 RDS(ON) (m) 2 -V DS , Drain-to-Source Voltage (V) 400 200 1.5 1.2 0.9 0 0.6 0 2 4 6 8 -V GS (V) Fig 3. On-Resistance v.s. Gate Voltage 10 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 AP3310GH/J-HF 10 30 25 20 PD (W) -ID , Drain Current (A) 8 6 15 4 10 2 5 0 0 25 50 75 100 125 0 150 50 T c , Case Temperature ( o C) 100 150 T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1 Normalized Thermal Response (R thjc) -ID (A) 100 1ms 10 10ms T C =25 C Single Pulse 0.2 0.1 0.1 0.05 PDM t 0.02 Duty Factor = t/T Peak Tj = P DM x Rthjc + TC Single Pulse DC 10 -V DS (V) Fig 7. Maximum Safe Operating Area T 0.01 100ms 1 1 Duty Factor = 0.5 0.01 100 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance 4 AP3310GH/J-HF f=1.0MHz 1000 I D =-2.8A V DS =-6V 4 Ciss C (pF) -VGS , Gate to Source Voltage (V) 5 3 Coss 100 2 Crss 1 10 0 0 2 4 6 1 8 3 5 Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics 9 11 13 Fig 10. Typical Capacitance Characteristics 10 1.5 T j =25 o C -VGS(th) (V) T j =150 o C -IS(A) 7 -V DS (V) 1 1 0.5 0 0 0.3 0.5 0.7 0.9 1.1 1.3 -V SD (V) Fig 11. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 5 AP3310GH/J-HF VDS 90% RD VDS D TO THE OSCILLOSCOPE 0.3 x RATED VDS RG G 10% S VGS VGS -5 V td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE D 0.3 x RATED VDS G S QG -5V QGS QGD VGS -1~-3mA I G ID Charge Fig 15. Gate Charge Circuit Q Fig 16. Gate Charge Waveform 6