ZXTN2010Z Green 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 60V IC = 5A High Continuous Current RSAT = 30m for a Low Equivalent On-Resistance Low Saturation Voltage VCE(SAT) < 65mV @ IC = 1A hFE Specified Up to 10A for High Current Gain Hold Up Complementary PNP Type: ZXTP2012Z Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT89 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MILSTD-202, Method 208 Weight: 0.05 grams (Approximate) Application Emergency Lighting Circuits Motor Driving (Including DC Fans) Backlight Inverters Power Switches Gate Driving MOSFETs and IGBTs SOT89 C E C C B B E Top View Top View Pin Out Device Symbol Ordering Information (Note 5) Part Number ZXTN2010ZTA ZXTN2010Z-13R ZXTN2010ZQTA Notes: Compliance AEC-Q101 AEC-Q101 Automotive Marking 851 851 851 Reel Size (inches) 7 13 7 Tape Width (mm) 12 12 12 Quantity per Reel 1,000 4,000 1,000 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information 851 ZXTN2010Z Document number: DS33661 Rev. 5 - 2 851 = Product Type Marking Code 1 of 7 www.diodes.com September 2018 (c) Diodes Incorporated ZXTN2010Z Maximum Ratings (@TA = +25C, unless otherwise specified.) Symbol Value Unit Collector-Base Voltage Characteristic VCBO 150 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V IB 2 A IC 5 A ICM 20 A Value Unit 1.5 12 2.1 16.8 W mW/C W mW/C Base Current Continuous Collector Current Peak Pulse Current Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation (Note 6) Linear Derating Factor Power Dissipation (Note 7) Linear Derating Factor Symbol PD PD Thermal Resistance, Junction to Ambient (Note 6) RJA 83 C/W Thermal Resistance, Junction to Ambient (Note 7) RJA 60 C/W Thermal Resistance, Junction to Leads (Note 8) RJL 3.23 C/W TJ, TSTG -55 to +150 C Operating and Storage Temperature Range ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 6. For a device mounted with the exposed collector pad on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper. 8. Thermal resistance from junction to solder-point (on the exposed collector pad). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTN2010Z Document number: DS33661 Rev. 5 - 2 2 of 7 www.diodes.com September 2018 (c) Diodes Incorporated ZXTN2010Z Max Power Dissipation (W) Thermal Characteristics and Derating Information IC Collector Current (A) VCE(SAT) 10 Limit 1 DC 1s 100ms 10ms 100m o Single Pulse. T A=25 C 10m 100m 1ms 100s 25x25mm 1oz Cu 1 10 100 2.0 50x50mm 1oz Cu 1.5 1.0 25x25mm 1oz Cu 0.5 0.0 0 20 Max Power Dissipation (W) o Thermal Resistance ( C/W) 25x25mm 1oz Cu D=0.5 40 Single Pulse D=0.2 D=0.05 0 1m 100 D=0.1 10m 100m 1 10 80 100 120 140 160 Derating Curve 60 20 60 Temperature ( C) Safe Operating Area 80 40 o VCE Collector-Emitter Voltage (V) 100 1k o Single Pulse. T A=25 C 100 25x25mm 1oz Cu 10 1 100 1m 10m 100m 1 10 100 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation ZXTN2010Z Document number: DS33661 Rev. 5 - 2 3 of 7 www.diodes.com 1k September 2018 (c) Diodes Incorporated ZXTN2010Z Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Symbol BVCBO BVCER BVCEO BVEBO Min 150 150 60 7 Typ 190 190 80 8.1 Max -- -- -- -- 50 500 Unit V V V V nA nA ICBO -- <1 ICER R 1k IEBO -- <1 <1 200 200 105 40 17 35 40 90 170 970 910 100 500 10 -- 300 -- -- 30 55 65 125 230 1100 1050 nA nA nA Collector-Emitter Saturation Voltage (Note 10) VCE(SAT) Base-Emitter Saturation Voltage (Note 10) Base-Emitter Turn-on Voltage (Note 10) VBE(SAT) VBE(ON) -- 100 100 55 20 -- -- -- -- -- -- -- fT -- 130 -- MHz COBO tON tOFF -- 31 42 760 -- pF -- ns Emitter Cutoff Current DC Current Transfer Static Ratio (Note 10) Transitional Frequency Output Capacitance Switching Time Note: hFE -- -- mV mV mV Test Condition IC = 100A IC = 1A, RB 1k IC = 10mA IE = 100A VCB = 120V VCB = 120V, TA = +100C VCB = 120V VCB = 120V, TA = +100C VEB = 6V IC = 10mA, VCE = 1V IC = 2A, VCE = 1V IC = 5A, VCE = 1V IC = 10A, VCE = 1V IC = 100mA, IB = 5mA IC = 1A, IB = 100mA IC = 1A, IB = 50mA IC = 2A, IB = 50mA IC = 6A, IB = 300mA IC = 6A, IB = 300mA IC = 6A, VCE = 1V IC = 100mA, VCE = 10V, f = 50MHz VCB = 10V, f = 1MHz, VCC = 10V, IC = 1A IB1 = -IB2 = 100mA 10. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. ZXTN2010Z Document number: DS33661 Rev. 5 - 2 4 of 7 www.diodes.com September 2018 (c) Diodes Incorporated ZXTN2010Z Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 1 0.6 o T A=25 C VCE(SAT) (V) VCE(SAT) (V) 0.5 100m IC/IB=50 IC/IB=20 10m 0.4 o 100 C 0.3 o 25 C 0.2 0.1 IC/IB=10 1m 10m 100m 1 o -55 C 0.0 1m 10 10m 100m VCE(SAT) v IC VCE(SAT) v IC 1.6 100 C 200 o 150 1.0 0.8 25 C 0.6 100 o -55 C 0.4 50 0.2 1.4 VBE(SAT) (V) o Typical Gain (hFE) 1.2 IC/IB=10 1.2 o -55 C 1.0 o 25 C 0.8 0.6 o 0.4 10m 100m 1 10 0 1m IC Collector Current (A) 100 C 10m 100m 1 10 IC Collector Current (A) hFE v IC 1.4 10 IC Collector Current (A) VCE=1V 0.0 1m 1 IC Collector Current (A) 250 Normalised Gain IC/IB=10 VBE(SAT) v IC VCE=1V VBE(ON) (V) 1.2 o -55 C 1.0 o 25 C 0.8 0.6 0.4 1m o 100 C 10m 100m 1 10 IC Collector Current (A) VBE(ON) v IC ZXTN2010Z Document number: DS33661 Rev. 5 - 2 5 of 7 www.diodes.com September 2018 (c) Diodes Incorporated ZXTN2010Z Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT89 D1 0 .20 R0 c SOT89 Dim Min Max Typ A 1.40 1.60 1.50 B 0.50 0.62 0.56 B1 0.42 0.54 0.48 c 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.62 1.83 1.733 D2 1.61 1.81 1.71 E 2.40 2.60 2.50 E2 2.05 2.35 2.20 e 1.50 H 3.95 4.25 4.10 H1 2.63 2.93 2.78 L 0.90 1.20 1.05 L1 0.327 0.527 0.427 z 0.20 0.40 0.30 All Dimensions in mm H E B1 L B e D2 8 (4 X) H1 E2 A L1 D z Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT89 X2 Dimensions Y3 Y1 Y4 X Y C G X X1 X2 Y Y1 Y2 Y3 Y4 G Y2 Value (in mm) 1.500 0.244 0.580 0.760 1.933 1.730 3.030 1.500 0.770 4.530 X1 C ZXTN2010Z Document number: DS33661 Rev. 5 - 2 6 of 7 www.diodes.com September 2018 (c) Diodes Incorporated ZXTN2010Z IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2018, Diodes Incorporated www.diodes.com ZXTN2010Z Document number: DS33661 Rev. 5 - 2 7 of 7 www.diodes.com September 2018 (c) Diodes Incorporated