ZXTN2010Z
Document number: DS33661 Rev. 5 - 2
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60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
Features
BVCEO > 60V
IC = 5A High Continuous Current
RSAT = 30mΩ for a Low Equivalent On-Resistance
Low Saturation Voltage VCE(SAT) < 65mV @ IC = 1A
hFE Specified Up to 10A for High Current Gain Hold Up
Complementary PNP Type: ZXTP2012Z
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Application
Emergency Lighting Circuits
Motor Driving (Including DC Fans)
Backlight Inverters
Power Switches
Gate Driving MOSFETs and IGBTs
Mechanical Data
Case: SOT89
Case Material: Molded Plastic. “Green” Molding Compound. UL
Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-
STD-202, Method 208
Weight: 0.05 grams (Approximate)
Ordering Information (Note 5)
Part Number
Compliance
Tape Width (mm)
Quantity per Reel
ZXTN2010ZTA
AEC-Q101
12
1,000
ZXTN2010Z-13R
AEC-Q101
12
4,000
ZXTN2010ZQTA
Automotive
12
1,000
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Green
851 = Product Type Marking Code
Top View
Device Symbol
Top View
Pin Out
SOT89
C
E
B
E
C
B
C
851
ZXTN2010Z
Document number: DS33661 Rev. 5 - 2
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
150
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7
V
Base Current
IB
2
A
Continuous Collector Current
IC
5
A
Peak Pulse Current
ICM
20
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
Linear Derating Factor
PD
1.5
12
W
mW/°C
Power Dissipation (Note 7)
Linear Derating Factor
PD
2.1
16.8
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
83
°C/W
Thermal Resistance, Junction to Ambient (Note 7)
RθJA
60
°C/W
Thermal Resistance, Junction to Leads (Note 8)
RθJL
3.23
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 9)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
≥ 4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
≥ 400
V
C
Notes: 6. For a device mounted with the exposed collector pad on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
7. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN2010Z
Document number: DS33661 Rev. 5 - 2
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Thermal Characteristics and Derating Information
100m 110 100
10m
100m
1
10
Single Pulse. TA=25oC
25x25mm 1oz Cu
VCE(SAT)
Limit
100s
1ms
10ms
100ms
1s
DC
Safe Operating Area
IC Collector Current (A)
VCE Collector-Emitter Voltage (V) 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
25x25mm 1oz Cu
50x50mm 1oz Cu
Derating Curve
Temperature (oC)
Max Power Dissipation (W)
100μ 1m 10m 100m 110 100 1k
0
20
40
60
80 25x25mm 1oz Cu
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (oC/W)
Pulse Width (s) 100μ 1m 10m 100m 110 100 1k
1
10
100 Single Pulse. TA=25oC
25x25mm 1oz Cu
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
µ
µ
ZXTN2010Z
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
150
190
—
V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 10)
BVCER
150
190
—
V
IC = 1µA, RB ≤ 1kΩ
Collector-Emitter Breakdown Voltage (Note 10)
BVCEO
60
80
—
V
IC = 10mA
Emitter-Base Breakdown Voltage
BVEBO
7
8.1
—
V
IE = 100µA
Collector Cutoff Current
ICBO
—
< 1
50
500
nA
nA
VCB = 120V
VCB = 120V, TA = +100°C
Collector Cutoff Current
ICER
R ≤ 1kΩ
—
< 1
100
500
nA
nA
VCB = 120V
VCB = 120V, TA = +100°C
Emitter Cutoff Current
IEBO
—
< 1
10
nA
VEB = 6V
DC Current Transfer Static Ratio (Note 10)
hFE
100
200
—
—
IC = 10mA, VCE = 1V
100
200
300
IC = 2A, VCE = 1V
55
105
—
IC = 5A, VCE = 1V
20
40
—
IC = 10A, VCE = 1V
Collector-Emitter Saturation Voltage (Note 10)
VCE(SAT)
—
17
30
mV
IC = 100mA, IB = 5mA
—
35
55
IC = 1A, IB = 100mA
—
40
65
IC = 1A, IB = 50mA
—
90
125
IC = 2A, IB = 50mA
—
170
230
IC = 6A, IB = 300mA
Base-Emitter Saturation Voltage (Note 10)
VBE(SAT)
—
970
1100
mV
IC = 6A, IB = 300mA
Base-Emitter Turn-on Voltage (Note 10)
VBE(ON)
—
910
1050
mV
IC = 6A, VCE = 1V
Transitional Frequency
fT
—
130
—
MHz
IC = 100mA, VCE = 10V,
f = 50MHz
Output Capacitance
COBO
—
31
—
pF
VCB = 10V, f = 1MHz,
Switching Time
tON
—
42
—
ns
VCC = 10V, IC = 1A
IB1 = -IB2 = 100mA
tOFF
760
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
ZXTN2010Z
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1m 10m 100m 110
10m
100m
1
1m 10m 100m 110
0.0
0.1
0.2
0.3
0.4
0.5
0.6
1m 10m 100m 110
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1m 10m 100m 110
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1m 10m 100m 110
0.4
0.6
0.8
1.0
1.2
1.4
0
50
100
150
200
250
VCE(SAT) v IC
TA=25oC
IC/IB=50
IC/IB=20
IC/IB=10
VCE(SAT) (V)
IC Collector Current (A)
VBE(SAT) v IC
IC/IB=10
100oC
25oC
-55oC
VCE(SAT) (V)
IC Collector Current (A)
hFE v IC
VCE=1V
-55oC
25oC
100oC
Normalised Gain
IC Collector Current (A)
25oC
VCE(SAT) v IC
IC/IB=10
100oC
-55oC
VBE(SAT) (V)
IC Collector Current (A)
VBE(ON) v IC
VCE=1V
100oC
25oC
-55oC
VBE(ON) (V)
IC Collector Current (A)
Typical Gain (hFE)
ZXTN2010Z
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT89
H1
EH
D1
B
e
c
L
A
D
8° (4X)
D2
E2
z
L1
R0.200
B1
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT89
Y4
X2
Y1
X
YY2
Y3
G
C
X1
SOT89
Dim
Min
Max
Typ
A
1.40
1.60
1.50
B
0.50
0.62
0.56
B1
0.42
0.54
0.48
c
0.35
0.43
0.38
D
4.40
4.60
4.50
D1
1.62
1.83
1.733
D2
1.61
1.81
1.71
E
2.40
2.60
2.50
E2
2.05
2.35
2.20
e
-
-
1.50
H
3.95
4.25
4.10
H1
2.63
2.93
2.78
L
0.90
1.20
1.05
L1
0.327
0.527
0.427
z
0.20
0.40
0.30
All Dimensions in mm
Dimensions
Value
(in mm)
C
1.500
G
0.244
X
0.580
X1
0.760
X2
1.933
Y
1.730
Y1
3.030
Y2
1.500
Y3
0.770
Y4
4.530
ZXTN2010Z
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IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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