050-4935 Rev B 2-2008
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specifi ed.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
VDS(ON)
IDSS
IGSS
gfs
Visolation
VGS(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 300μA)
On State Drain Voltage 1 (ID(ON) = 10A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 15V, ID = 10A)
RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)
Gate Threshold Voltage (VDS = VGS, ID = 6mA)
MIN TYP MAX
1000
5 7
300
3000
±600
3 14
TBD
2 4
UNIT
Volts
μA
nA
mhos
Volts
Symbol
VDSS
ID
VGS
PD
TJ,TSTG
TL
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF1519
1000
20
±30
1350
-55 to 175
300
UNIT
Volts
Amps
Volts
Watts
°C
RF POWER MOSFET
N-CH AN NEL ENHANCEMENT MODE 250V 750W 25MHz
The ARF1519 is an RF power transistor designed for very high power scientifi c, commercial, medical and industrial
RF power generator and amplifi er applications up to 25 MHz.
• Specifi ed 250 Volt, 13.56 MHz Characteristics:
• Output Power = 750 Watts.
• Gain = 17dB (Class C)
• Effi ciency > 75%
• High Performance Power RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
ARF1519
THERMAL CHARACTERISTICS
Symbol
RθJC
RθCS
Characteristic (per package unless otherwise noted)
Junction to Case
Case to Sink (Use High Effi ciency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN TYP MAX
0.13
0.09
UNIT
°C/W
Volts
ARF1519
BeO 104T-100
Microsemi Website - http://www.microsemi.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-4935 Rev B 2-2008
DYNAMIC CHARACTERISTICS ARF1519
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 150V
f = 1 MHz
MIN TYP MAX
4600 5600
310 350
90 120
UNIT
pF
FUNCTIONAL CHARACTERISTICS
Symbol
GPS
η
Ψ
Test Conditions
f = 13.56MHz
VGS = 0V VDD = 200V
Pout = 750W No Degradation in Output Power
Characteristic
Common Source Amplifi er Power Gain
Drain Effi ciency
Electrical Ruggedness VSWR 10:1
MIN TYP MAX
17 20
70 75
UNIT
dB
%
1 Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.
Per transistor section unless otherwise specifi ed.
CAPACITANCE (pf)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1, Typical Capacitance vs. Drain-to-Source Voltage
.1 1 10 100 200
Ciss
Coss
Crss
60
50
40
30
20
10
0
0 1 2 3 4 5 6 7
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Transfer Characteristics
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
TJ = +125°C
TJ = +25°C
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
050-4935 Rev B 2-2008
ARF1519
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 5, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
ZqJC, THERMAL IMPEDANCE (°C/W)
0.2
0.1
0.05
0.01
0.005
0.001
0.1
0.02
0.05
0.2
D=0.5
0.01
SINGLE PULSE
TC, CASE TEMPERATURE (°C)
Figure 3, Typical Threshold Voltage vs Temperature VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Output Characteristics
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
5.5V
4.5V
4V
5V
6V
50
45
40
35
30
25
20
15
10
5
0
6.5V
Table 1 - Typical Class AB Large Signal Impedance -- ARF1519
F (MHz) Zin (Ω)Z
OL (Ω)
Zin - Gate shunted with 25Ω IDQ = 100mA
ZOL - Conjugate of optimum load for 750 Watts
output at Vdd = 200V
2.0
13.5
10.6 -j 12.2
0.5 -j 2.7
31 -j 4.7
15.6 -j 16
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
050-4935 Rev B 2-2008
ARF1519
BeO 1525-100
1.000
.500
.150r
.500
.466
.750
1.500
1.250
.300
.200
.250
.250
.005 .040
.125d
1
2
4
3
1 Drain
2 Source
3 Source
4 Gate
Thermal Considerations and Package
Mounting:
The rated 1350W power dissipation is only
available when the package mounting surface is
at 25°C and the junction temperature is 200°C.
The thermal resistance between junctions and
case mounting surface is 0.12°C/W. When instal-
led, an additional thermal impedance of 0.1°C/W
between the package base and the mounting sur-
face is typical. Insure that the mounting surface
is smooth and flat. Thermal joint compound
must be used to reduce the effects of small sur-
face irregularities. The heatsink should incorpo-
rate a copper heat spreader to obtain best re-
sults. Use 4-40 or M3 screws torqued to
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between
leads and mounting surface is beryllium oxide-
BeO. Beryllium oxide dust is toxic when in-
haled. Care must be taken during handling
and mounting to avoid damage to this area
These devices must never be thrown away
with general industrial or domestic waste.
D
S
G
13.56 MHz Test Amp
ARF1519
RF 12-04
J1
J2
T1
ARF1518
BeO 1525-100
Parts placement - Not to Scale.
ARF1519 -- 13.56 MHz Test Circuit
L1
Output
C8
C9
C7 C10
L3
C4
C5 C6
200V
L2
RF
Input T1
R1
C1-C3 1nF X7R 100V smt
C4 2x 8.2 nF 1kV COG
C5 270pF x2 ATC 100C
C7-C10 8.2 nF 1kv COG
C11 390 + 27 pF ATC 100C
L1 2uH - 22t #24 enam. .312" dia.
L2 368 nH - 5t #12 .625" dia .5" l
L3 500nH 2t on 850u .5" bead
R1 2.2k 0.5W
T1 10:1t transformer
C1 C2 C3
DUT
T = 4 - 6 in-lb (0.45 - 0.68 N-m).
