L15ESDxVE2
GENERAL DESCRIPTION
The L15ESDxVE2 is designed to protect sensitive semiconductor
components from damage or upset due to Electro Static Discharge
(ESD).
FEATURES
Uni-directional ESD Protectionof one line.
Max. peak pulse power : Ppp = 150W at tp = 8/20 us.
ESD protection>25KV per MIL-STD-883C,Method 3015-6;Class 3.
IEC 61000-4-2, level 4 (ESD), > ± 15KV (air);> ± 8KV (contact).
APPLICATION
Computers and peripherals
Communication system
Audio & video equipment
High-speed data lines
Parallel ports
MECHANICAL DATA
Case Material: "Green" molding compound UL flammability
classification 94V-0 (No Br.Sb, Cl)
Terminals: Lead Free Plating (Matte Tin Finish)
Component in accordance to RoHs 2002/95/EC
Dimension = DFN, 1.0mm (L) * 0.6mm (W)
ESD PROTECTION DIODE
STAND-OFF VOLTAGE -
12~24
Volts
POWER DISSIPATION -
150
WATTS
SEMICONDUCTOR
LITE-ON
REV. 8, May-2012, KSIR29
MAXIMUM RATINGS
(Tj= 25 unless otherwise noticed)
Rating Symbol Value Unit
Peak pulse Power ( 8/20us Waveform ) P
PPM
150 (Max) W
Peak Pulse Current ( 8/20us Waveform ) I
PP
6 A
Operating Junction Temperature Range T
J
-55 to + 125
Storage Temperature Range Tstg -55 to + 150
Soldering Temperature, t max = 10s T
L
260
SOD-882
1 Cathode
2 Anode
PIN ASSIGNMENT
1
2
All Dimensions in millimeter
SOD-882
DIM. MIN. MAX.
A
b
D
E
L
A1
0.47 0.53
0.05
0.00
0.25 0.55
1.075
0.95
0.55 0.675
0.20 0.45
ELECTRICAL CHARACTERISTICS
(Tj= 25
unless otherwise noticed)
L15ESD12VE2
L15ESD24VE2
RATING AND CHARACTERISTIC CURVES
L15ESDxVE2
Parameter Symbol Conditions MIn Typ Max Unit
Reverse standoff voltage V
RWM
--- --- --- 12 V
Reverse leakage current I
RM
V
DRM
= 12 V --- --- 50 nA
Breakdown voltage V
BR
I
R
= 1 mA 14.2 --- 15.8 V
Clamping voltage V
CL
I
PP
= 6A, tp= 8/20us --- --- 25 V
Junction capacitance CJ VR = 0 V , f = 1MHz --- 45 75 pF
Parameter Symbol Conditions MIn Typ Max Unit
Reverse standoff voltage V
RWM
--- --- --- 24 V
Reverse leakage current I
RM
V
DRM
= 24 V --- --- 50 nA
Breakdown voltage V
BR
I
R
= 1 mA 26.5 --- 29.5 V
Clamping voltage V
CL
I
PP
= 3A, tp= 8/20us --- --- 50 V
Junction capacitance CJ VR = 0 V , f = 1MHz --- 25 50 pF
0
10
20
30
40
50
60
0 1 2 3 4 5
0.1
1.0
10.0
100.0
1000.0
0 25 50 75 100 125 150
0
40
80
120
0 10 20 30 40
Time (us)
Figure 1. 8/20 us pulse waveform according to IEC 61000-4-5
Percent of Peak Pulse Current
(%)
Figure 2. ESD pulse waveform according to IEC 61000-4-2
Time (ns)
10%
90%
100%
50% Ipp: 20us
100% Ipp: 8us
e
-1
30 ns
60 ns
tr = 0.7 ~1 ns
Percent of Peak Pulse Current
%
RATING AND CHARACTERISTIC CURVES
L15ESDxVE2
Figure 5. Typical Junction Capactiance Figure 6. Reverse Leakage Current versus T
J
Junction Temperature ( )
Capacitance (pF)
Reverse Voltage (V)
IR / IR (25 )
T
J
=25 , f=1MHz, Vosc=100mV
Figure 3. Power Dissipation versus Pulse Time
10
100
1000
10000
1 10 100 1000
Pulse Time (us)
T
J
=25 , tp (us) = 8/20 us
exponentially decay waveform
Peak pulse Power
(W)
0
0.4
0.8
1.2
0 25 50 75 100 125
Ppp / Ppp (25 )
Figure 4. Peak pulse power versus T
J
Junction Temperature ( )
12V
24V
RATING AND CHARACTERISTIC CURVES
L15ESDxVE2
Figure 8. Clamped +8 kV ESD voltage waveform
+/-8KV
ESD Contact
discharge V (i/o)
I/O1
Figure 7. ESD Test Configuration
Figure 9. Clamped -8 kV ESD voltage waveform
V (i/o)
V (i/o)
L15ESD12VE2
L15ESD24VE2
Figure 10. Clamped +8 kV ESD voltage waveform Figure 11. Clamped -8 kV ESD voltage waveform
V (i/o)
V (i/o)
Q'TY/REEL
(PCS)
REEL DIA.
(INCH)
Q'TY/BOX
(PCS)
Q'TY/CARTON
(PCS)
10K 7 150K 300K
DEVICE
L15ESD12VE2
L15ESD24VE2
SOD-882 Soldering Pad Layout
Packaging Information
Marking & Orientation
RATING AND CHARACTERISTIC CURVES
L15ESDxVE2
Marking & Orientation
XX
Marking: L15ESD12VE2, XX:MC
L15ESD24VE2, XX:MO
Legal Disclaimer Notice
L15ESDxVE2
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specifications at any time without notice. Customers should obtain and confirm
the latest product information and specifications before final design, purchase or
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