© Semiconductor Components Industries, LLC, 2012
March, 2019 Rev. 5
1Publication Order Number:
DTC144E/D
MUN2213, MMUN2213L,
MUN5213, DTC144EE,
DTC144EM3, NSBC144EF3
Digital Transistors (BRT)
R1 = 47 kW, R2 = 47 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
CollectorBase Voltage VCBO 50 Vdc
CollectorEmitter Voltage VCEO 50 Vdc
Collector Current Continuous IC100 mAdc
Input Forward Voltage VIN(fwd) 40 Vdc
Input Reverse Voltage VIN(rev) 10 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
SC75
CASE 463
STYLE 1
MARKING DIAGRAMS
XXX = Specific Device Code
M = Date Code*
G=PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
SC59
CASE 318D
STYLE 1
SOT23
CASE 318
STYLE 6
SC70/SOT323
CASE 419
STYLE 3
SOT723
CASE 631AA
STYLE 1
SOT1123
CASE 524AA
STYLE 1
(Rotated 0° Clockwise
XX MG
G
1
1
XXX MG
G
XX MG
G
1
XX M
1
X M
XX M
1
1
PIN CONNECTIONS
www.onsemi.com
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
www.onsemi.com
2
Table 1. ORDERING INFORMATION
Device Part Marking Package Shipping
MUN2213T1G, SMUN2213T1G* 8C SC59
(PbFree)
3000 / Tape & Reel
MMUN2213LT1G, SMMUN2213LT1G* A8C SOT23
(PbFree)
3000 / Tape & Reel
SMMUN2213LT3G A8C SOT23
(PbFree)
10000 / Tape & Reel
MUN5213T1G, SMUN5213T1G* 8C SC70/SOT323
(PbFree)
3000 / Tape & Reel
DTC144EET1G, SDTC144EET1G* 8C SC75
(PbFree)
3000 / Tape & Reel
DTC144EM3T5G, NSVDTC144EM3T5G* 8C SOT723
(PbFree)
8000 / Tape & Reel
NSBC144EF3T5G D SOT1123
(PbFree)
8000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable.
Figure 1. Derating Curve
AMBIENT TEMPERATURE (°C)
12510075502502550
0
50
100
150
200
250
300
PD, POWER DISSIPATION (mW)
150
(1) (2) (3) (4) (5)
(1) SC75 and SC70/SOT323; Minimum Pad
(2) SC59; Minimum Pad
(3) SOT23; Minimum Pad
(4) SOT1123; 100 mm2, 1 oz. copper trace
(5) SOT723; Minimum Pad
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
www.onsemi.com
3
Table 2. THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
THERMAL CHARACTERISTICS (SC59) (MUN2213)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD230
338
1.8
2.7
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
RqJA 540
370
°C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2)
RqJL 264
287
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS (SOT23) (MMUN2213L)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD246
400
2.0
3.2
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
RqJA 508
311
°C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2)
RqJL 174
208
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS (SC70/SOT323) (MUN5213)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD202
310
1.6
2.5
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
RqJA 618
403
°C/W
Thermal Resistance, (Note 1)
Junction to Lead (Note 2)
RqJL 280
332
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS (SC75) (DTC144EE, SDTC144EE)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD200
300
1.6
2.4
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
RqJA 600
400
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS (SOT723) (DTC144EM3)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD260
600
2.0
4.8
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
RqJA 480
205
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 x 1.0 Inch Pad.
3. FR4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR4 @ 500 mm2, 1 oz. copper traces, still air.
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
www.onsemi.com
4
Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
THERMAL CHARACTERISTICS (SOT1123) (NSBC144EF3)
Total Device Dissipation
TA = 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
PD254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4)
RqJA 493
421
°C/W
Thermal Resistance, Junction to Lead
(Note 3)
RqJL 193 °C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 x 1.0 Inch Pad.
3. FR4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR4 @ 500 mm2, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
100
nAdc
CollectorEmitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
500
nAdc
EmitterBase Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
0.1
mAdc
CollectorBase Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO 50
Vdc
CollectorEmitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CEO 50
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V)
hFE 80 140
CollectorEmitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
0.25
Vdc
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
1.2 0.8
Vdc
Input Voltage (on)
(VCE = 0.3 V, IC = 2.0 mA)
Vi(on) 3.0 1.6
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
VOL
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH 4.9
Vdc
Input Resistor R1 32.9 47 61.1 kW
Resistor Ratio R1/R20.8 1.0 1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
www.onsemi.com
5
TYPICAL CHARACTERISTICS
MUN2213, MMUN2213L, MUN5213, DTC144EE, SDTC144EE, DTC144EM3
Figure 2. VCE(sat) vs. IC
0246810
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (V)
TA=25°C
75°C
25°C
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
10
1
0.1
010 203040 50
IC, COLLECTOR CURRENT (mA)
Figure 5. Output Current vs. Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
25°C
100
10 1 100
25°C
75°C
50
010203040
3.2
2.8
1.2
0.8
0.4
0
VR, REVERSE VOLTAGE (V)
Figure 6. Input Voltage vs. Output Current
020 40 50
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
25°C
75°C
VCE = 10 V
f = 10 kHz
IE = 0 A
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
TA=25°C
TA=25°C
VCE(sat), COLLECTOREMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
1.6
2.0
2.4
Cob, OUTPUT CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (V)
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
www.onsemi.com
6
TYPICAL CHARACTERISTICS NSBC144EF3
Figure 7. VCE(sat) vs. IC
1002030
IC, COLLECTOR CURRENT (mA)
100
1
0.1
40 50
Figure 8. DC Current Gain
Figure 9. Output Capacitance
10
0.1
0.01
02040
50
IC, COLLECTOR CURRENT (mA)
1000
100
10.1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 10. Output Current vs. Input Voltage
100
10
1
0.1
0.001 04 8
Vin, INPUT VOLTAGE (V)
28
Figure 11. Input Voltage vs. Output Current
50
010 203040
0.4
1.2
0
VR, REVERSE VOLTAGE (V)
30
VCE(sat), COLLECTOREMITTER VOLTAGE (V)
IC/IB = 10
55°C
25°C
VCE = 10 V
hFE, DC CURRENT GAIN
f = 10 kHz
IE = 0 A
TA = 25°C
0.8
1.6
2.0
2.4
Cob, OUTPUT CAPACITANCE (pF)
VO = 5 V
IC, COLLECTOR CURRENT (mA)
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
10
150°C
55°C
25°C
150°C
1
10
10 55°C
25°C
150°C
55°C
25°C
150°C
2012 16
1
24
0.01
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
www.onsemi.com
7
PACKAGE DIMENSIONS
SC59
CASE 318D04
ISSUE H
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
e
A1
b
A
E
D
2
3
1
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2.4
0.094
0.95
0.037
0.95
0.037
1.0
0.039
0.8
0.031 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.00 1.15 1.30 0.039
INCHES
A1 0.01 0.06 0.10 0.001
b0.35 0.43 0.50 0.014
c0.09 0.14 0.18 0.003
D2.70 2.90 3.10 0.106
E1.30 1.50 1.70 0.051
e1.70 1.90 2.10 0.067
L0.20 0.40 0.60 0.008
2.50 2.80 3.00 0.099
0.045 0.051
0.002 0.004
0.017 0.020
0.005 0.007
0.114 0.122
0.059 0.067
0.075 0.083
0.016 0.024
0.110 0.118
NOM MAX
HE
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
www.onsemi.com
8
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
www.onsemi.com
9
PACKAGE DIMENSIONS
SC70 (SOT323)
CASE 41904
ISSUE N
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
www.onsemi.com
10
PACKAGE DIMENSIONS
SC75/SOT416
CASE 463
ISSUE F
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
E
D
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
3
2
1
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.059 0.063 0.067
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
HE
L0.10 0.15 0.20
1.50 1.60 1.70
0.004 0.006 0.008
0.061 0.063 0.065
0.70 0.80 0.90 0.027 0.031 0.035
0.787
0.031
0.508
0.020 1.000
0.039
ǒmm
inchesǓ
SCALE 10:1
0.356
0.014
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.803
0.071
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
www.onsemi.com
11
PACKAGE DIMENSIONS
SOT723
CASE 631AA
ISSUE D
DIM MIN NOM MAX
MILLIMETERS
A0.45 0.50 0.55
b0.15 0.21 0.27
b1 0.25 0.31 0.37
C0.07 0.12 0.17
D1.15 1.20 1.25
E0.75 0.80 0.85
e0.40 BSC
H1.15 1.20 1.25
L
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
D
b1
E
b
e
A
L
C
H
Y
X
X0.08 Y
2X
E
12
3
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
L2 0.15 0.20 0.25
0.29 REF
3X
L2
3X
1
2X
TOP VIEW
BOTTOM VIEW
SIDE VIEW
RECOMMENDED
DIMENSIONS: MILLIMETERS
0.40
1.50
2X
PACKAGE
OUTLINE
0.27
2X
0.52
3X 0.36
MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3
www.onsemi.com
12
PACKAGE DIMENSIONS
SOT1123
CASE 524AA
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
DIM MIN MAX
MILLIMETERS
A0.34 0.40
b0.15 0.28
c0.07 0.17
D0.75 0.85
E0.55 0.65
0.95 1.05
L0.185 REF
HE
D
E
c
A
Y
X
HE
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
e
b1 0.10 0.20
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
1
2
3
0.35 0.40
TOP VIEW
SIDE VIEW
3X
BOTTOM VIEW
L2
L
3X
DIMENSIONS: MILLIMETERS
1.20
2X
0.26
3X 0.34
PACKAGE
OUTLINE
b
2X b1
e
0.08 XY
L2 0.05 0.15
0.20
0.38
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer
is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and
hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was
negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright
laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
DTC144E/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative