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BIPOLAR ANALOG INTEGRATED CIRCUI T
µ
µµ
µ
PC8112TB
SILICON MMIC 1st FREQUENCY DOWN-CONVERTER
FOR CELLULAR/CORDLESS TELEPHONE
©
1997, 2000
Document No. P12808EJ3V0DS00 (3rd edition)
Date Published November 2000 N CP(K)
Printed in Japan
DATA SHEET
The mark shows major revised poi nts.
DESCRIPTION
The
µ
PC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for
cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The
µ
PC8112TB features
high impedance output of open collector. Similar ICs of the
µ
PC2757TB and
µ
PC2758TB feature low impedance
output of emitter follower. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to
reduce your system size.
The
µ
PC8112TB is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
Excellent RF performance : IIP3 = –7 dBm@fRFin = 1.9 GHz (reference)
IM3 = –88 dBm@PRFin = –38 dBm, 1.9 GHz (reference)
Similar conversion gain to
µ
PC2757 and lower noise figure than
µ
PC2758
Minimized carrier leakage : RFLO = –80 dB@fRFin = 900 MHz (reference)
RFLO = –55 dB@fRFin = 1.9 GHz (reference)
High linearity : PO(sat) = –2.5 dBm TYP.@fRFin = 900 MHz
PO(sat) = –3 dBm TYP.@fRFin = 1.9 GHz
Low current consumption : ICC = 8.5 mA TYP.
Supply voltage : VCC = 2.7 to 3.3 V
High-density surface mounting: 6-pin super minimold package
APPLICATIONS
1.5 to 1.9 GHz cellular/cordless telephone (PHS, DECT, PDC1.5G and so on)
800 to 900 MHz cellular telephone (PDC800M and so on)
ORDER INFORMATION
Part Number Package Markings Supplyi ng Form
µ
PC8112TB-E3 6-pin super mini m ol d C2K Embossed tape 8 mm wi de.
Pin 1, 2, 3 face the t ape perforation s i de.
Qty 3k pc s/reel.
Remark To order evaluation samples, please contact your local NEC sales office (Part number for sample order:
µ
PC8112TB).
Caution Electro-static sensitive devices
Data Sheet P12808EJ3V0DS00
2
µ
µµ
µ
PC8112TB
CONTENTS
1. PIN CONNECTIONS.............................................................................................................................................3
2. PRODUCT LINE-UP.............................................................................................................................................3
3. INTERNAL BLOCK DIAGRAM...........................................................................................................................4
4. SYSTEM APPLICATION EXAMPLE...................................................................................................................4
5. PIN EXPLANATION .............................................................................................................................................5
6. ABSOLUTE MAXIMUM RATINGS......................................................................................................................6
7. RECOMMENDED OPERATING RANGE............................................................................................................6
8. ELECTRICAL CHARACTERISTICS ....................................................................................................................6
9. STANDARD CHARACTERISTICS FOR REFERENCE .....................................................................................7
10. TEST CIRCUIT .....................................................................................................................................................7
11. ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD.................................8
12. TYPICAL CHARACTERISTICS............................................................................................................................9
12.1 Without Signals...........................................................................................................................................9
12.2 IF 100 MHz Matching (fRFin = 900 MHz)....................................................................................................10
12.3 IF 100 MHz Matching (fRFin = 1.5 GHz).....................................................................................................12
12.4 IF 240 MHz Matching ................................................................................................................................14
13. S-PARAMETERS ................................................................................................................................................16
13.1 Calibrated on pin of DUT..........................................................................................................................16
13.2 IF Output Matching...................................................................................................................................17
14. PACKAGE DIMENSIONS....................................................................................................................................18
15. NOTE ON CORRECT USE................................................................................................................................19
16. RECOMMENDED SOLDERING CONDITIONS..................................................................................................19
Data Sheet P12808EJ3V0DS00 3
P
PP
P
PC8112TB
1. PIN CONNECTIONS
2. PRODUCT LINE-UP (TA = +25°C, VCC = VPS = 3.0 V, ZS = ZL = 50 :
::
:)
Items No RF
ICC
(mA)
900 MHz
SSB · NF
(dB)
1.5 GHz
SSB · NF
(dB)
1.9 GHz
SSB · NF
(dB)
900 MHz
CG
(dB)
1.5 GHz
CG
(dB)
1.9 GHz
CG
(dB)
900 MHz
IIP3
(dBm)
1.5 GHz
IIP3
(dBm)
1.9 GHz
IIP3
(dBm)
P
PC2757T 5.6 10 10 13 15 15 13 ð14 ð14 ð12
P
PC2757TB
P
PC2758T 11 9 10 13 19 18 17 ð13 ð12 ð11
P
PC2758TB
P
PC8112T 8.5 9 11 11 15 13 13 ð10 ð9ð7
P
PC8112TB
Items 900 MHz
PO(sat)
(dBm)
1.5 GHz
PO(sat)
(dBm)
1.9 GHz
PO(sat)
(dBm)
900 MHz
RFLO
(dB)
1.5 GHz
RFLO
(dB)
1.9 GHz
RFLO
(dB)
IF Output
Configuration Package
P
PC2757T ð3ðð
8 Emitter follower 6-pin minimold
P
PC2757TB 6-pin super mi ni m ol d
P
PC2758T +1 ðð
4 6-pin minim ol d
P
PC2758TB 6-pin super mi ni m ol d
P
PC8112T ð2.5 ð3ð3ð80 ð57 ð55 Open collect or 6-pin minim ol d
P
PC8112TB 6-pin super mi ni m ol d
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Cautions 1. The
P
PP
P
PC2757 and
P
PP
P
PC2758’s IIP3 are calculated with
'
''
'
IM3 = 3 which is the same IM3
inclination as
P
PP
P
PC8112. On the other hand, OIP3 of Standard characterisitcs in page 7 is
cross point IP.
2. This document is to be specified for
P
PP
P
PC8112TB. The other part number mentioned in this
document should be referred to the data sheet of each part number.
Pin No. Pin Name
1 RFinput
2GND
3 LOinput
4PS
5V
CC
6 IFoutput
Part
Number
Part
Number
3
2
1
4
5
6
(Top View) (Bottom View)
4
5
6
3
2
1
C2K
Data Sheet P12808EJ3V0DS00
4
µ
µµ
µ
PC8112TB
3. INTERNAL BLOCK DIAGRAM
RFinput IFoutput
LOinput
4. SYSTEM APPLICATION EXAMPLE
Digital cordless phone
I
Q
DEMOD. I
Q
÷N PLL PLL
90˚
VCO
PA
TX
SW
RX
Low noise Tr. PC8112TB
µ
φ
Data Sheet P12808EJ3V0DS00 5
µ
µµ
µ
PC8112TB
5. PIN EXPLANATION
Pin
No. Pin
Name
Applied
Voltage
(V)
Pin Voltage
(V) Functi on and Application Internal E qui valent Circuit
1 RFinput 1.2 RF input pin of mi xer. This
mixer is designed as doubl e
balanced type.
This pin s houl d be externally
coupled to front s t age with DC cut
capacitor.
2GND GND Ground pin. This pi n m ust be
connect ed t o the system ground.
Form the ground patt ern as wide
as poss i bl e and t he truck l ength
as short as possibl e t o m i ni mize
ground impedance.
5V
CC 2.7 to 3.3 Supply v ol tage pin.
This pin s houl d be connected wi t h
bypass capacit or (ex ample: 1 000
pf) to mi ni m i ze ground
impedance.
6 IFoutput as same as
VCC voltage
through
external
inductor
IF output pi n. This out put i s
configured wi t h open collec t or of
high impedance. This pin should
be externall y equipped with
matchi ng circuit of induc t or should
be selected as sm al l resist ance
and high frequency use.
3 LOinput 1. 4 Input pin of local am pl i fier. This
amplifi er i s designed as di fferen-
tial type.
This pin s houl d be externally
coupled to l ocal signal source
with DC cu t capacitor.
Recommendable i nput level i s
15 to 0 dBm.
4PS V
CC or
GND Power save control pin. This pin
can control ON/ O FF operat i on
with bias as follows;
Bias: V Operation
2.5 ON
VPS
0 to 0.5 OFF
From
LO
5
6
1
2
To mixer
5
3
2
5
2
4
Data Sheet P12808EJ3V0DS00
6
µ
µµ
µ
PC8112TB
6. ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Conditions Ratings Unit
Supply V ol tage VCC TA = +25°C, 5 pin and 6 pi n 3.6 V
Total Circ ui t Current ICC TA = +25°C 77.7 mA
Total P ower Dissi pation PDMounted on doubl e sided copper c l ad 50 × 50 ×
1.6 mm epox y glass PWB (TA = +85°C) 270 mW
Operating Ambient Temperature TA40 to +85 °C
Storage Temperat ure Tstg 55 to +150 °C
7. RECOMMENDED OPERATING RANGE
Parameter Symbol MIN. TYP. MAX. Unit Remarks
Supply V ol tage VCC 2.7 3.0 3.3 V 5 pin and 6 pin shoul d be appl i ed
to same voltage.
Operating Ambient Temperature TA40 +25 +85 °C
LO Input Power PLOin 15 10 0 dBm Zs = 50
RF Input Frequency fRFin 0.8 1.9 2.0 GHz
IF Output Frequency fIFout 100 250 300 MHz With external matching
8. ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +
++
+25°
°°
°C, VCC = VPS = VIFout
= 3.0 V, PLOin =
10 dBm, ZS = ZL = 50
)
Parameter Symbol Test Condit i ons MIN. TYP. MAX. Unit
Circuit Current ICC No input signal 4.9 8.5 11.7 mA
Circuit Current at Power Save
Mode ICC(PS) VCC = 3.0 V, VPS = 0. 5 V −−
0.1
µ
A
Conversion Gai n CG fRFin = 900 MHz , f LOin = 1 000 MHz
fRFin = 1.9 GHz , fLOin = 1.66 GHz 11.5
9.5 15
13 17.5
15.5 dB
SSB Noise Figure SSBNF fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.9 GHz , fLOin = 1.66 GHz
9.0
11.2 11
13.2 dB
Saturated Output Power Po(sat) fRFin = 900 MHz , f LOin = 1 000 MHz
fRFin = 1.9 GHz , fLOin = 1.66 GHz
(PRFin = 10 dBm each)
6.5
72.5
3
dBm
Data Sheet P12808EJ3V0DS00 7
µ
µµ
µ
PC8112TB
9. STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +
++
+25°
°°
°C, VCC = VPS = VIFout = 3.0 V, PLOin =
10 dBm, ZS = ZL = 50
)
Parameter Symbol Test Conditi ons Reference Unit
Conversion Gai n CG fRFin = 1.5 GHz, fLOin = 1.6 GHz 13 dB
SSB Noise Figure SSBNF fRFin = 1.5 GHz, fLOin = 1.6 GHz 11 dB
LO Leakage at RF pin LORF fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.5 GHz , fLOin = 1.6 GHz
fRFin = 1.9 GHz , fLOin = 1.66 GHz
45
46
45
dB
RF Leakage at LO pin RFLO fRFin = 900 MHz, fLOin = 1 000 MHz
fRFin = 1.5 GHz , fLOin = 1.6 GHz
fRFin = 1.9 GHz , fLOin = 1.66 GHz
80
57
55
dB
LO Leakage at IF pi n LO if fRFin = 900 MHz, f LOin = 1 000 MHz
fRFin = 1.5 GHz , fLOin = 1.6 GHz
fRFin = 1.9 GHz , fLOin = 1.66 GHz
32
33
30
dB
3rd Order Distort i on Input
Intercept PointNote IIP3fRFin = 900 MHz, f LOin = 1 000 MHz
fRFin = 1.5 GHz , fLOin = 1.6 GHz
fRFin = 1.9 GHz , fLOin = 1.66 GHz
10
9
7
dBm
Note IIP3 is determined by comparing two method; theoretical calculation and cross point of IM3 curve.
IIP3 = (
IM3 × Pin + CG IM3) ÷ (
IM3 1) (dBm) [
IM3: IM3 curve inclination in linear range]
µ
PC8112’s
IM3 is closer to 3 (theoretical inclination) than
µ
PC2757 and
µ
PC2758 of conventional ICs.
10. TEST CIRCUIT
1 000 pF
50
C
1
3
2
1
50
(Top View)
4
5
6
LOinput
GND
RFinput
PS
V
CC
IFoutput
POWER
SAVE
3 V
L
1
C
6
50
1 000 pF
C
2
C
4,
C
5
Spectrum Analyzer
Signal Generator
Signal Generator
Data Sheet P12808EJ3V0DS00
8
µ
µµ
µ
PC8112TB
11. ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
LO
input
RF
input
PS bias
Voltage supply
IF
output
Short
Chip
Short Chip = 1 000 pF
GND
C
2
C
1
V
CC
PS
C
4
C
5
L
1
C
6
C
3
Component Number IF 100 MHz Matchi ng IF 240 MHz Matchi ng Remarks
C1 to C51 000 pF 1 000 pF CHIP C
C65 pF 2 pF CHIP C
L1330 nH 84 nH CHIP L
EVALUATION BOARD CHARACTERS AND NOTE
(1) 35
µ
m thick double-sided copper clad 35 × 42 × 0.4 mm polyimide board
(2) Back side: GND pattern
(3) Solder plated patterns
(4) {: Through holes
(5) To mount C6, pattern should be cut.
Caution Test circuit or print pattern in this sheet is for testing IC characteristics. They are not an
application circuit or recommended system circuit.
In the case of actual system application, external circuits including print pattern and matching
circuit constant of output port should be designed in accordance with IC’s S-parameters and
environmental components.
Remark External circuits of the IC can be referred to following application notes.
USAGE AND APPLICATION CHARACTERISTICS OF
µ
PC2757,
µ
PC2758, AND
µ
PC8112, 3-V
POWER SUPPLY, 1.9-GHz FREQUENCY DOWN-CONVERTER ICS FOR MOBILE COMMUNICATION
(Document No. P11997E)
Data Sheet P12808EJ3V0DS00 9
µ
µµ
µ
PC8112TB
12. TYPICAL CHARACTERISTICS (TA = +25°
°°
°C, unless otherwise specified, measured on test
circuits)
12.1 Without Signals
12
10
8
6
4
2
0
12
10
8
6
4
2
0
12
10
8
6
4
2
0
Circuit Current I
CC
(mA)
Circuit Current I
CC
(mA)
Circuit Current I
CC
(mA)
1
0234
Supply Voltage V
CC
(V)
1
0234
PS Pin Applied Voltage V
PS
(V)
1
0234
Supply Voltage V
CC
(V)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
CIRCUIT CURRENT vs.
PS PIN APPLIED VOLTAGE
V
CC
= V
PS
= V
IFout
V
CC
= V
PS
= V
IFout
V
CC
= V
IFout
T
A
= +85°C
T
A
= +25°C
T
A
= –40°C
V
CC
= 3.3 V
V
CC
= 3.0 V
V
CC
= 2.7 V
Data Sheet P12808EJ3V0DS00
10
µ
µµ
µ
PC8112TB
12.2 IF 100 MHz Matching (fRFin = 900 MHz)
0
–5
–10
–15
–20
–25
–30
IF Output Power P
IFout
(dBm)
–40
–50 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER vs. RF INPUT POWER
–35 0
0
–5
–10
–15
–20
–25
–30
IF Output Power P
IFout
(dBm)
–40
–50 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER vs. RF INPUT POWER
–35 0
20
10
0
–10
–20
–30
–40
IF Output Power of Each Tone P
IFout(each)
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBm)
–40
–50 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER OF EACH TONE,
IM
3
vs. RF INPUT POWER
–50
0
–60
–70
20
15
10
5
0
–5
Conversion Gain CG (dB)
–40
–50 –30 –20 –10
LO Input Power P
LOin
(dBm)
CONVERSION GAIN vs. LO INPUT POWER
–10 10
0
V
CC
= 3.3 V V
CC
= 3.0 V
V
CC
= 2.7 V
P
out
IM
3
f
RFin
= 900 MHz
f
LOin
= 1 000 MHz
f
IFout
= 100 MHz
P
LOin
= –10 dBm
V
CC
= V
PS
= V
IFout
= 3.0 V
f
RFin
= 900 MHz
f
LOin
= 1 000 MHz
f
IFout
= 100 MHz
P
LOin
= –10 dBm
V
CC
= V
PS
= V
IFout
= 3.0 V
f
RFin
= 900 MHz
P
RFin
= –40 dBm
f
LOin
= 1 000 MHz
f
IFout
= 100 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
f
RFin1
= 900 MHz
f
RFin2
= 905 MHz
f
LOin
= 1 000 MHz
P
LOin
= –10 dBm
V
CC
= V
PS
= V
IFout
= 3.0 V
f
IFout
= 100 MHz
Data Sheet P12808EJ3V0DS00 11
µ
µµ
µ
PC8112TB
20
15
10
5
Conversion Gain CG (dB)
2.5
233.5
Supply Voltage V
CC
(V)
CONVERSION GAIN vs. SUPPLY VOLTAGE
04
f
RFin
= 900 MHz
f
LOin
= 1 000 MHz
f
IFout
= 100 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
20
18
16
14
SSB Noise Figure SSB•NF (dB)
–30
–40 –20 –10
LO Input Power P
LOin
(dBm)
SSB NOISE FIGURE vs. LO INPUT POWER
60
f
RFin
= 900 MHz
f
LOin
= 1 000 MHz
f
IFout
= 100 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
12
10
8
20
15
10
5
Conversion Gain CG (dB)
50
0100 150
IF Output Frequency f
IFout
(MHz)
CONVERSION GAIN vs.
IF OUTPUT FREQUENCY
–25 500
f
RFin
= 900 MHz
P
RFin
= –40 dBm
P
LOin
= –10 dBm
V
CC
= V
PS
= V
IFout
= 3.0 V
0
–5
–10
–15
–20
250
200 300 350 400 450
Data Sheet P12808EJ3V0DS00
12
µ
µµ
µ
PC8112TB
12.3 IF 100 MHz Matching (fRFin = 1.5 GHz)
5
0
–5
–10
–15
–20
–25
IF Output Power P
IFout
(dBm)
–40
–50 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER vs. RF INPUT POWER
–30 10
f
RFin
= 1.5 GHz
f
LOin
= 1.6 GHz
P
LOin
= –10 dBm
f
IFout
= 100 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
0
5
0
–5
–10
–15
–20
–25
IF Output Power P
IFout
(dBm)
–40
–50 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER vs. RF INPUT POWER
–30 10
V
CC
= 3.3 V
V
CC
= 3.0 V
V
CC
= 2.7 V
f
RFin
= 1.5 GHz
f
LOin
= 1.6 GHz
P
LOin
= –10 dBm
f
IFout
= 100 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
0
10
0
–10
–20
–30
–40
–50
IF Output Power of Each Tone P
IFout(each)
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBm)
–40 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER OF EACH TONE,
IM
3
vs. RF OUTPUT POWER
–60
0
–70
–80
P
out
IM
3
f
RFin1
= 1.5 GHz
f
RFin2
= 1.505 GHz
f
LOin
= 1.6 GHz
P
LOin
= –10 dBm
f
IFout
= 100 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
–90
15
10
5
0
–5
–10
Conversion Gain CG (dB)
–40
–50 –30 –20 –10
LO Input Power P
LOin
(dBm)
CONVERSION GAIN vs. LO INPUT POWER
–15 10
0
f
RFin
= 1.5 GHz
f
LOin
= 1.6 GHz
P
RFin
= –40 dBm
f
IFout
= 100 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
Data Sheet P12808EJ3V0DS00 13
µ
µµ
µ
PC8112TB
15
10
5
Conversion Gain CG (dB)
2.5
233.5
Supply Voltage V
CC
(V)
CONVERSION GAIN vs. SUPPLY VOLTAGE
04
f
RFin
= 1.5 GHz
f
LOin
= 1.6 GHz
f
IFout
= 100 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
30
25
20
SSB Noise Figure SSB•NF (dB)
–30
–40 –20 –10
LO Input Power P
LOin
(dBm)
SSB NOISE FIGURE vs. LO INPUT POWER
00
f
RFin
= 1.5 GHz
f
LOin
= 1.6 GHz
f
IFout
= 100 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
15
10
5
Data Sheet P12808EJ3V0DS00
14
µ
µµ
µ
PC8112TB
12.4 IF 240 MHz Matching
0
–5
–10
–15
–20
–25
–30
IF Output Power P
IFout
(dBm)
–40
–50 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER vs. RF INPUT POWER
–35
0
0
–5
–10
–15
–20
–25
–30
IF Output Power P
IFout
(dBm)
–40
–50 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER vs. RF INPUT POWER
–35
0
V
CC
= 3.3 V
V
CC
= 3.0 V
V
CC
= 2.7 V
f
RFin
= 1.9 GHz
f
LOin
= 1.66 GHz
P
LOin
= –10 dBm
f
IFout
= 240 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
f
RFin
= 1.9 GHz
f
LOin
= 1.66 GHz
P
LOin
= –10 dBm
f
IFout
= 240 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
–40
T
A
= –40°C
T
A
= +25°C
T
A
= +85°C
–40
20
10
–10
–20
–30
–40
IF Output Power of Each Tone P
IFout(each)
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBm)
–40
–50 –30 –20 –10
RF Input Power P
RFin
(dBm)
IF OUTPUT POWER OF EACH TONE,
IM
3
vs. RF INPUT POWER
–50
0
–60
–70
15
10
5
0
–5
–10
Conversion Gain CG (dB)
–40
–50 –30 –20 –10
LO Input Power P
LOin
(dBm)
CONVERSION GAIN vs. LO INPUT POWER
–15 10
0
P
out
IM
3
f
RFin
= 1.9 GHz
P
RFin
= –40 dBm
f
LOin
= 1.66 GHz
f
IFout
= 240 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
f
RFin1
= 1.9 GHz
f
RFin2
= 1.905 GHz
f
LOin
= 1.66 GHz
P
LOin
= –10 dBm
V
CC
= V
PS
= V
IFout
= 3.0 V
f
IFout
= 240 MHz
0
Data Sheet P12808EJ3V0DS00 15
µ
µµ
µ
PC8112TB
15
10
5
Conversion Gain CG (dB)
2.5
233.5
Supply Voltage V
CC
(V)
CONVERSION GAIN vs. SUPPLY VOLTAGE
04
f
RFin
= 1.9 GHz
P
RFin
= –40 dBm
f
LOin
= 1.66 GHz
P
LOin
= –10 dBm
f
IFout
= 240 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
20
18
16
14
SSB Noise Figure SSB•NF (dB)
–30
–40 –20 –10
LO Input Power P
LOin
(dBm)
SSB NOISE FIGURE vs. LO INPUT POWER
60
f
RFin
= 1.9 GHz
f
LOin
= 1.66 GHz
f
IFout
= 240 MHz
V
CC
= V
PS
= V
IFout
= 3.0 V
12
10
8
15
10
5
Conversion Gain CG (dB)
0100
IF Output Frequency f
IFout
(MHz)
CONVERSION GAIN vs.
IF OUTPUT FREQUENCY
600
f
RFin
= 1.9 GHz
P
RFin
= –40 dBm
P
LOin
= –10 dBm
V
CC
= V
PS
= V
IFout
= 3.0 V
0
–5
–10
–15
–20 200 300 400 500
5
15
13
12
SSB Noise Figure SSB•NF (dB)
–20
–40 020
Operating Ambient Temperature T
A
(°C)
SSB NOISE FIGURE vs.
OPERATING AMBIENT TEMPERATURE
5100
f
RFin
= 1.9 GHz
f
LOin
= 1.66 GHz
P
LOin
= –10 dBm
V
CC
= V
PS
= V
IFout
= 3.0 V
8
7
6
14
10
9
11
40 60 80
Remark The graphs indicate nominal characteristics.
Data Sheet P12808EJ3V0DS00
16
µ
µµ
µ
PC8112TB
13. S-PARAMETERS
13.1 Calibrated on pin of DUT
1
1
S
11
REF
1
hp
Z
1.0 Units
200.0 mUnits/
62.711 –224.07
MARKER 1
500.0 MHz
1
2
3
4
5
START
STOP 0.050000000 GHz
3.000000000 GHz
RF PORT
V
CC
= V
PS
= 3.0V
1:500 MHz 62.711 -j224.07
2:900 MHz 48.977 -j219.18
3:1 500 MHz 40.641 -j129.94
4:1 900 MHz 37.422 -j101.51
5:2 500 MHz 34.801 -j74.141
S
11
REF
1
hp
Z
1.0 Units
200.0 mUnits/
76.656 –421.67
MARKER 1
500.0 MHz
1
2
3
4
5
START
STOP 0.050000000 GHz
3.000000000 GHz
RF PORT
V
CC
= 3.0V V
PS
= GND
1:500 MHz 76.656 -j421.67
2:900 MHz 53.102 -j234.55
3:1 500 MHz 44.844 -j140.82
4:1 900 MHz 40.898 -j109.73
5:2 500 MHz 38.063 -j80.547
S
11
REF
1
hp
Z
1.0 Units
200.0 mUnits/
169.11 –429.98
MARKER 1
500.0 MHz
1
2
3
4
5
START
STOP 0.050000000 GHz
3.000000000 GHz
LO PORT
V
CC
= V
PS
= 3.0V
1:500 MHz 169.11 -j429.98
2:900 MHz 91.875 -j263.7
3:1 500 MHz 60.781 -j162.56
4:1 900 MHz 56.789 -j125.66
5:2 500 MHz 49.652 -j97.602
S
11
REF
1
hp
Z
1.0 Units
200.0 mUnits/
135.53 –575.06
MARKER 1
500.0 MHz
1
2
3
4
5
START
STOP 0.050000000 GHz
3.000000000 GHz
LO PORT
V
CC
= 3.0V V
PS
= GND
1:500 MHz 135.53 -j575.06
2:900 MHz 78.266 -j337.66
3:1 500 MHz 55.883 -j201.43
4:1 900 MHz 52.734 -j159.63
5:2 500 MHz 44.262 -j122.66
S
22
REF
1
hp
Z
1.0 Units
200.0 mUnits/
201.00 –1.7173 k
MARKER 1
100.0 MHz
1
2
START
STOP 0.050000000 GHz
3.000000000 GHz
IF PORT
V
CC
= V
PS
= 3.0V
1:100 MHz 201.88 -j1.7173 k
2:240 MHz 92.094 -j715.72
S
22
REF
1
hp
Z
1.0 Units
200.0 mUnits/
056.56 –1.7468 k
MARKER 1
100.0 MHz
1
2
START
STOP 0.050000000 GHz
3.000000000 GHz
IF PORT
V
CC
= 3.0V V
PS
= GND
1:100 MHz 56.56 -j1.7468 k
2:240 MHz 85.5 -j722.22
Data Sheet P12808EJ3V0DS00 17
µ
µµ
µ
PC8112TB
13.2 IF Output Matching (VCC = VPS = VIFout = 3.0 V)
on Test Circuit
(This S11 is monitored at IF connector on test circuit fixture)
IF 100 MHz MATCHING IF 240 MHz MATCHING
100.000 000 MHz
hp
S
11
1 U FS 1 : 50.277 –22.559 70.552 pF
MARKER 1
100 MHz
1
START 50.000 000 MHz STOP 3 000.000 000 MHz
240.000 000 MHz
hp
S
11
1 U FS 1 : 31.052 –84.961 m 7.8053 nF
MARKER 1
240 MHz
1
START 50.000 000 MHz STOP 3 000.000 000 MHz
102.366 002 MHz
hp
S
11
log MAG. 10 dB/ REF 0 dB 1 : –27.655 dB
MARKER 1
102.366002 MHz
1
START 90.000 000 MHz STOP 110.000 000 MHz
241.770 000 MHz
hp
S
11
log MAG. 10 dB/ REF 0 dB 1 : –13.556 dB
MARKER 1
241.770000 MHz
1
START 230.000 000 MHz STOP 250.000 000 MHz
The data in this page are to make clear the test condition of impedance matched to next stage, not specify the
recommended condition. The S11 smith charts of the test fixture setting IC are normalized to ZO = 50 , because the
IC's load is the measurement equipment of 50 impedance.
In your use, the output return loss value can be helpful information to adjust your circuit matching to next stage.
Data Sheet P12808EJ3V0DS00
18
µ
µµ
µ
PC8112TB
14. PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
0.9±0.1
0.7
0 to 0.1
0.15
+0.1
–0.05
2.0±0.2
1.3
0.650.65
0.2
+0.1
–0.05
2.1±0.1
1.25±0.1
0.1 MIN.
Data Sheet P12808EJ3V0DS00 19
µ
µµ
µ
PC8112TB
15. NOTE ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
Keep the track length of the ground pins as short as possible.
(3) The bypass capacitor (example: 1 000 pF) should be attached to the VCC pin.
(4) The matching circuit should be externally attached to the IF output pin.
(5) The DC cut capacitor must be each attached to the input and output pins.
16. RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method Soldering Condition Recommended Condition Sy m bol
Infrared Refl ow Package peak temperat ure: 235°C or below
Time: 30 s econds or les s (at 210°C)
Count: 3, Exposure l i m i t: NoneNote
IR35-00-3
VPS Package peak temperat ure: 215°C or below
Time: 40 s econds or les s (at 200°C)
Count: 3, Exposure l i m i t: NoneNote
VP15-00-3
Wave Solderi ng Soldering bath temperature: 260° C or bel ow
Time: 10 seconds or less
Count: 1, Exposure l i m i t: NoneNote
WS60-00-1
Partial Heating Pi n temperature: 300° C
Time: 3 s econds or les s (per side of device)
Exposure l i mit: NoneNote
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
µ
µµ
µ
PC8112TB
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELECTROSTATIC
SENSITIVE
DEVICES
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
M8E 00. 4
The information in this document is current as of November, 2000. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
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and industrial robots
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).