Philips Semiconductors Product specification Low-leakage double diode BAV199 a FEATURES PINNING Plastic SMD package PIN DESCRIPTION Low leakage current: typ. 3 pA 1 anode Switching time: typ. 0.8 ps 2 cathode Continuous reverse voltage: 3 anode; cathode max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max.500mA. - 2 1 APPLICATION 2 { e Low-leakage current applications in __ surface mounted circuits. 3 DESCRIPTION Top view MAMI07 Epitaxial, medium-speed switching, double diode in a small plastic SOT23 SMD package. The diodes are Fig.1 Simplified outline (GOT23) and symbol. connected in series. Marking code: JYp. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS | MIN. | MAX. | UNIT Per diode VarM repetitive peak reverse voltage - 8 IV Vr continuous reverse voltage - 75 IV le continuous forward current single diode loaded; see Fig.2; note 1 - 160 |mA double diode loaded; see Fig.2; note-1 - 140 |mA lrRM repetitive peak forward current , - 500 |mA lFsm non-repetitive peak forward current | square wave; T; = 25 C prior to surge; see Fig.4 t=1us ~ 4 1A tp= 1ms ~ 1 |A t=1s - 0.5 |A Prot total power dissipation Tamb = 25 C; note 1 - 250 |mW Tstg storage temperature -65 +150 |C Tj junction temperature = 150 {C Note 1. Device mounted on a FR4 printed-circuit board. 1996 Mar 13 5-24Philips Semiconductors Product specification Low-leakage double diode BAV199 ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS | Typ. | max. | UNIT Per diode Ve forward voltage see Fig.3 lp=1mA ~ 900 |mV lr = 10 mA - 1000 | mV lp = 50 mA - 1100 |mV Ie = 150 mA - 1250 | mV In reverse current see Fig.5 Va=75V 0.003 5 [nA Va = 75 V; Tj = 150 C 3 80 [nA Cg diode capacitance f= 1 MHz; Vp = 0; see Fig.6 2 |pF ter reverse recovery time when switched from I- = 10 mA to 0.8 3 |ps In = 10 mA; R, = 100 Q; measured at Ip = 1 mA; see Fig.7 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Pith j-tp thermal resistance from junction to tie-point 360 KAW Rit j-a thermal resistance from junction to ambient | note 1 500 K/W Note 4. Device mounted on a FR4 printed-circuit board. 1996 Mar 13 -25Phitips Semiconductors Product specification Low-leakage double diode : - -BAV199 GRAPHICAL DATA 300 MLB752 - 1 'e (mA) 200 single diode loaded 100 9 100 %) 200 6 0.4 08 2 16 amb ("C) . : Ve) (1) T= 150 C; typical vatues. (2) Tj = 25 C; typical values. Device mounted on a FA4 printed-circuit board. (3) T= 25 C; maximum values. Fig.2.- Maximum permissible continuous forward Fig.3 Forward current as a function of forward current as a function of ambient temperature. voltage; per diode. 10? lesa (A) 10 19071 104 1 10 107 103 tp (us) Based on square wave currents; T; = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode. 1996 Mar 13 5-26Philips Semiconductors Preduct.specification Low-leakage double diode BAV199 102 'p (nA) 10 t 1071 107 10 0 50 100 50 200 0 5 10 18 yoy 2 Tj (C) R Vp = 75 V. (1) Maximum values. (2) Typicat values. f= 1 MHz; T; = 25 C. Fig.5 Reverse current as a function of Fig.6 Diode capacitance as a function of reverse junction temperature; per diode. voltage; per diode; typical values. QQ tr tp > |_t * 10% Rg=500 V=VptipxRg | Va 90% input signal output signal Fig.7 Reverse recovery time test circuit and waveforms. 1996 Mar 13 5-27