Data Sheet 1 2001-01-01
The T626_MPA2_W is a millimeter wave, medium power amplifier, suitable for signal
amplification in modern, MMIC-based car radar systems. It might be used as small signal
amplifier or as output stage.
The MMIC will be delivered with wirebond compatible pads. To ease substrate design,
the MMIC’s layout can be provided in dxf- or gds2-format.
Circuit Description
The T626_MPA2_W incorporates a two-stage, PHEMT - based millimeter wave
amplifier. Both input and output are matched to 50 Ω.
The T626_MPA2_W is optimized for mounting on a metal plate, different performance
might be expected using flip-chip mounting.
The MPA delivers at least 13 dBm of RF output power with 3 dB compression. The
small-signal gain is 8 dB.
Over a temperature range of Tamb = – 40 to + 95 °C, the output power variation is less
than 3 dB without DC bias compensation.
77 GHz MPA for Car Radar Systems T626_MPA2_W
Preliminary Data Sheet
• Operating Frequency: 76 - 77 GHz
• Output Power: + 13 dBm
• Input and Output matched to 50 Ω
• Application in Car Radar Systems
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Package
T626_MPA2_W – Q62702-G173 Chip
GaAs Components
T626_MPA2_W
Data Sheet 2 2001-01-01
Figure 1 Pin Configuration
The bias pads (2 - 7) have 150 µm pitch.
Pin Configuration
Pad Symbol Function
1 RF IN Coplanar RF Input, Matched to 50 Ω
Typically 46 µm RF Signal Pad Width, 37 µm Gap to GND Pads
RF Probing: Use 100 to 120 µm Ground – Signal – Ground Pitch
2VG1 Gate Voltage 1st PHEMT Amplifier Stage
3 GND Chip DC Ground
4VD1 Drain Voltage 1st PHEMT Amplifier Stage
5VG2 Gate Voltage 2nd PHEMT Amplifier Stage
6 GND Chip DC Ground
7VD2 Drain Voltage 2nd PHEMT Amplifier Stage
8 RF OUT Coplanar RF Output, Matched to 50 Ω
Typically 46 µm RF Signal Pad Width, 37 µm Gap to GND Pads
RF Probing: Use 100 to 120 µm Ground – Signal – Ground Pitch
EHT09245
IN
MPA 76
Infineon
GD
GD
OUT
T626A11
WE
2
1 8
234567
GaAs Components
T626_MPA2_W
Data Sheet 3 2001-01-01
Characteristic - General and DC
Parameter Symbol Typ. Value Unit
Ambient Temperature1) Tamb – 40 to + 105 °C
Drain Supply Voltage, 1st Stage VD1 3.4 V
Gate Supply Voltage, 1st Stage VG1 0.2 V
Drain Supply Current, 1st Stage ID1 40 mA
Drain Supply Voltage, 2nd Stage VD2 3.6 V
Gate Supply Voltage, 2nd Stage VG2 0.2 V
Drain Supply Current, 2nd Stage ID2 60 mA
1) Chip’s backside mounted on a metal heatsink.
Characteristic - RF
Parameter1)
1) The given parameters assume 50 Ω RF load impedance and an ambient temperature of Tamb = 25 °C. The
chip’s backside is mounted on a metal plate. Chip thickness is 100 µm. The T626_MPA2_W is intended for
wire bonding only. Flip chip mounting with stud bumps might lead to different performance.
Symbol Typ. Value Unit
Operation frequency f076 to 77 GHz
RF Output Power, 1 dB compression POUT–1dB 11 dBm
RF Output Power, 3 dB compression POUT–3dB 13 dBm
RF Output Power, saturation PSAT 13.5 dBm
Small Signal Gain (PIN = – 10 dBm) GS8dB
Large Signal Gain (PIN = + 6 dBm) GS6.5 dB
Isolation with both stages VD=0 Ai> 30 dB
GaAs Components
T626_MPA2_W
Data Sheet 4 2001-01-01
Geometry
Parameter Symbol Typ. Value Unit
Chip Thickness dChip 100 µm
Chip Outline AChip 1.68 × 0.89 mm2
Bond Pad Size DC ABondpadDC 100 × 100 µm2
Bond Pad Pitch DC DC Pitch 150 µm
Bond Pad Size RF ABondpadRF 50 × 50 µm2
Bond Pad Pitch RF1) CPW Pitch 120 µm
1) RF Probing: Use G-S-G Probes with 100 to 120 µm Pitch.
Recommended Bonding Conditions
Parameter Thermal
Compression1)
1) Nailhead, no ultrasonic
Wedge Bonding Unit
Chuck Temp. 250 250 °C
Tool Temp. 180 150 °C
Scrub 100 –Hz
Bond Force5025g
Wire Diameter 25 17 µm
Bond Pull Test (1) 2.52)
2) See Mil 883, > 2 g
g
Bond Pull Test (2) 3.12) g
Bond Pull Test (3) 3.22) g
Bond Pull Test (4) 3.02) g
Bond Pull Test (5) 2.82) g
GaAs Components
T626_MPA2_W
Data Sheet 5 2001-01-01
Application Note: Infineon Semiconductors in Modern ACC Radar Systems
Infineon provides a variety of car radar products to simplify the design of modern, MMIC-
based car radar systems:
Figure 2 Principle of a Modern one-beam, MMIC-based FMCW Radar System
EHT09246
RF
ACC_PLL_1
Infineon PLL Module
Tune
V
+14 dBm
IF
1 GHz
RF
LO
15.1 GHz
BAT14-077D
5th Harmonic Mixer
IF Processing and Sweep Control:
Infineon TriCore
IF
1-100 kHz typ.
Sweep
Control
Antenna
Low Noise Ref. Oscillator
ACC_DRO15.1_1
77 GHz VCO
T625_VCO2_W 77 GHz Amplifiers
2 x T626_MPA2_W Transceive Mixer
2 x BAT14-077D
TM
DSP-Controller
GaAs Components
T626_MPA2_W
Data Sheet 6 2001-01-01
T625_VCO2_W PHEMT-based 76 - 77 GHz, two-stage voltage controlled
oscillator (VCO) GaAs MMIC with + 5 dBm output power.
T626_MPA2_W PHEMT-based 76 - 77 GHz, two-stage medium power amplifier
(MPA) with max. + 13.5 dBm RF output power and 10 dB small-
signal gain at 76.5 GHz.
BAT14-077D Silicon-based dual Schottky diode for millimeter wave receive
mixer applications, 12 dB conversion loss, low 1/f corner
frequency, very low noise.
ACC_DRO15.1_11) Ultra-low phase noise (– 108 dB/Hz @ 100 kHz) dielectric
resonator oscillator (DRO) module as stable frequency reference
with excellent short-term and long-term stability. Pre-tuned to
15.1 GHz.
ACC_PLL_11) Phase locked loop (PLL) module for the generation of ultra-linear
frequency sweeps in FMCW radar systems. Typical deviation
from a 200 MHz RF sweep at 76.5 GHz is less than 20 kHz.
Maximum sweep bandwidth: 450 MHz, modulation rate
500 GHz/s. User control by simple digital interface or by an
external data generator.
TriCore1) TriCore microcontroller with two fast, synchronous A/D
converters. Especially suited for signal processing and sweep
control.
1) Contact Infineon for more information and design support.
GaAs Components
T626_MPA2_W
Data Sheet 7 2001-01-01
Application Note: Biasing of Infineon PHEMT-Based Car Radar MMICs
Infineon car radar MMICs provide on-chip blocking capacitors, capable to reduce bias
oscillations down to 1 GHz. For save operation below 1 GHz, a bypass capacitor of 470
to 330 pF should be connected from each MMIC gate terminal to an on-chip ground pad.
The capacitor should have low ESR up to 1.5 GHz. Keep leads as short as possible.
Figure 3
DC-Blocking of drain terminals is normally not necessary and might lead to bias
oscillations induced by feedback via common ground lead inductance. Combination of
drain and gate terminals should be done by series resistors of 5 to 10 Ω.
To compensate for temperature effects, an active bias controller with positive
temperature coefficient (e.g. Infineon BCR 400W) can be used.
EHT09247
G
V
Gate
Terminal
Drain
Terminal
External
Bypass - Cap
330-470 pF
Recommended
V
D
