77 GHz MPA for Car Radar Systems T626_MPA2_W Preliminary Data Sheet * * * * Operating Frequency: 76 - 77 GHz Output Power: + 13 dBm Input and Output matched to 50 Application in Car Radar Systems ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Package T626_MPA2_W - Q62702-G173 Chip The T626_MPA2_W is a millimeter wave, medium power amplifier, suitable for signal amplification in modern, MMIC-based car radar systems. It might be used as small signal amplifier or as output stage. The MMIC will be delivered with wirebond compatible pads. To ease substrate design, the MMIC's layout can be provided in dxf- or gds2-format. Circuit Description The T626_MPA2_W incorporates a two-stage, PHEMT - based millimeter wave amplifier. Both input and output are matched to 50 . The T626_MPA2_W is optimized for mounting on a metal plate, different performance might be expected using flip-chip mounting. The MPA delivers at least 13 dBm of RF output power with 3 dB compression. The small-signal gain is 8 dB. Over a temperature range of Tamb = - 40 to + 95 C, the output power variation is less than 3 dB without DC bias compensation. Data Sheet 1 2001-01-01 GaAs Components T626_MPA2_W 1 8 IN MPA 76 Infineon G T626A11 D WE 2 Figure 1 G D 3 4 5 6 7 OUT 2 EHT09245 Pin Configuration Pin Configuration Pad Symbol Function 1 RF IN Coplanar RF Input, Matched to 50 Typically 46 m RF Signal Pad Width, 37 m Gap to GND Pads RF Probing: Use 100 to 120 m Ground - Signal - Ground Pitch 2 VG1 Gate Voltage 1st PHEMT Amplifier Stage 3 GND Chip DC Ground 4 VD1 Drain Voltage 1st PHEMT Amplifier Stage 5 VG2 Gate Voltage 2nd PHEMT Amplifier Stage 6 GND Chip DC Ground 7 VD2 Drain Voltage 2nd PHEMT Amplifier Stage 8 RF OUT Coplanar RF Output, Matched to 50 Typically 46 m RF Signal Pad Width, 37 m Gap to GND Pads RF Probing: Use 100 to 120 m Ground - Signal - Ground Pitch The bias pads (2 - 7) have 150 m pitch. Data Sheet 2 2001-01-01 GaAs Components T626_MPA2_W Characteristic - General and DC Parameter Symbol Typ. Value Unit Ambient Temperature1) Tamb - 40 to + 105 C Drain Supply Voltage, 1st Stage VD1 3.4 V Gate Supply Voltage, 1st Stage VG1 0.2 V Drain Supply Current, 1st Stage ID1 40 mA Drain Supply Voltage, 2nd Stage VD2 3.6 V Gate Supply Voltage, 2nd Stage VG2 0.2 V Drain Supply Current, 2nd Stage ID2 60 mA Parameter1) Symbol Typ. Value Unit Operation frequency f0 76 to 77 GHz RF Output Power, 1 dB compression POUT-1dB 11 dBm RF Output Power, 3 dB compression POUT-3dB 13 dBm RF Output Power, saturation PSAT 13.5 dBm Small Signal Gain (PIN = - 10 dBm) GS 8 dB Large Signal Gain (PIN = + 6 dBm) GS 6.5 dB Isolation with both stages VD = 0 Ai > 30 dB 1) Chip's backside mounted on a metal heatsink. Characteristic - RF 1) The given parameters assume 50 RF load impedance and an ambient temperature of Tamb = 25 C. The chip's backside is mounted on a metal plate. Chip thickness is 100 m. The T626_MPA2_W is intended for wire bonding only. Flip chip mounting with stud bumps might lead to different performance. Data Sheet 3 2001-01-01 GaAs Components T626_MPA2_W Geometry Parameter Symbol Typ. Value Unit Chip Thickness dChip 100 m Chip Outline AChip 1.68 x 0.89 mm2 Bond Pad Size DC ABondpadDC 100 x 100 m2 Bond Pad Pitch DC DC Pitch 150 m Bond Pad Size RF ABondpadRF 50 x 50 m2 Bond Pad Pitch RF1) CPW Pitch 120 m 1) RF Probing: Use G-S-G Probes with 100 to 120 m Pitch. Recommended Bonding Conditions Parameter Thermal Compression1) Wedge Bonding Unit Chuck Temp. 250 250 C Tool Temp. 180 150 C Scrub 100 - Hz Bond Force 50 25 g Wire Diameter 25 17 m Bond Pull Test (1) 2.52) g Bond Pull Test (2) 3.12) g Bond Pull Test (3) 3.22) g Bond Pull Test (4) 3.02) g Bond Pull Test (5) 2.82) g 1) 2) Nailhead, no ultrasonic See Mil 883, > 2 g Data Sheet 4 2001-01-01 GaAs Components T626_MPA2_W Application Note: Infineon Semiconductors in Modern ACC Radar Systems Infineon provides a variety of car radar products to simplify the design of modern, MMICbased car radar systems: 77 GHz VCO T625_VCO2_W VTune 77 GHz Amplifiers 2 x T626_MPA2_W RF Transceive Mixer 2 x BAT14-077D Antenna +14 dBm RF Infineon PLL Module ACC_PLL_1 IF 1 GHz 5th Harmonic Mixer BAT14-077D LO 15.1 GHz IF 1-100 kHz typ. Sweep Control Low Noise Ref. Oscillator ACC_DRO15.1_1 IF Processing and Sweep Control: Infineon TriCore TM DSP-Controller EHT09246 Figure 2 Data Sheet Principle of a Modern one-beam, MMIC-based FMCW Radar System 5 2001-01-01 GaAs Components T626_MPA2_W T625_VCO2_W PHEMT-based 76 - 77 GHz, two-stage voltage controlled oscillator (VCO) GaAs MMIC with + 5 dBm output power. T626_MPA2_W PHEMT-based 76 - 77 GHz, two-stage medium power amplifier (MPA) with max. + 13.5 dBm RF output power and 10 dB smallsignal gain at 76.5 GHz. BAT14-077D Silicon-based dual Schottky diode for millimeter wave receive mixer applications, 12 dB conversion loss, low 1/f corner frequency, very low noise. ACC_DRO15.1_11) Ultra-low phase noise (- 108 dB/Hz @ 100 kHz) dielectric resonator oscillator (DRO) module as stable frequency reference with excellent short-term and long-term stability. Pre-tuned to 15.1 GHz. ACC_PLL_11) Phase locked loop (PLL) module for the generation of ultra-linear frequency sweeps in FMCW radar systems. Typical deviation from a 200 MHz RF sweep at 76.5 GHz is less than 20 kHz. Maximum sweep bandwidth: 450 MHz, modulation rate 500 GHz/s. User control by simple digital interface or by an external data generator. TriCore1) TriCore microcontroller with two fast, synchronous A/D converters. Especially suited for signal processing and sweep control. 1) Contact Infineon for more information and design support. Data Sheet 6 2001-01-01 GaAs Components T626_MPA2_W Application Note: Biasing of Infineon PHEMT-Based Car Radar MMICs Infineon car radar MMICs provide on-chip blocking capacitors, capable to reduce bias oscillations down to 1 GHz. For save operation below 1 GHz, a bypass capacitor of 470 to 330 pF should be connected from each MMIC gate terminal to an on-chip ground pad. The capacitor should have low ESR up to 1.5 GHz. Keep leads as short as possible. Drain Terminal Gate Terminal VG VD External Bypass - Cap 330-470 pF Recommended EHT09247 Figure 3 DC-Blocking of drain terminals is normally not necessary and might lead to bias oscillations induced by feedback via common ground lead inductance. Combination of drain and gate terminals should be done by series resistors of 5 to 10 . To compensate for temperature effects, an active bias controller with positive temperature coefficient (e.g. Infineon BCR 400W) can be used. Data Sheet 7 2001-01-01