At the beginning of interval 3, the system processor has
begun code execution and clears the interrupt condition
of WF and/or KF by writing zeros to both of these control
bits. As long as no other interrupt within the DS17x85/
DS17x87 is pending, the IRQ line is taken inactive once
these bits are reset. Execution of the application software
can proceed. During this time, the wake-up and kickstart
functions can be used to generate status and interrupts.
WF is set in response to a date, hours, minutes, and
seconds match condition. KF is set in response to a low-
going transition on KS. If the associated interrupt-enable
bit is set (WIE and/or KSE), the IRQ line is driven active
low in response to enabled event. In addition, the other
possible interrupt sources within the DS17885/DS17887
can cause IRQ to be driven low. While system power is
applied, the on-chip logic always attempts to drive the
PWR pin active in response to the enabled kickstart or
wake-up condition. This is true even if PWR was previ-
ously inactive as the result of power being applied by
some means other than wake-up or kickstart.
The system can be powered down under software control
by setting the PAB bit to logic 1. This causes the open-
drain PWR pin to be placed in a high-impedance state, as
shown at the beginning of interval 4 in the timing diagram.
As VCC voltage decays, the IRQ output pin is placed in
a high-impedance state when VCC goes below VPF. If
the system is to be again powered on in response to a
wake-up or kickstart, then the WF and KF flags should be
cleared, and WIE and/or KSE should be enabled prior to
setting the PAB bit.
During interval 5, the system is fully powered down.
Battery backup of the clock calendar and NV RAM is in
effect and IRQ is tri-stated, and monitoring of wake-up
and kickstart takes place. If PRS = 1, PWR stays active;
otherwise, if PRS = 0, PWR is high impedance.
RAM Clear
The DS17x85/DS17x87 provide a RAM clear function for
the 114 bytes of user RAM. When enabled, this function can
be performed regardless of the condition of the V
CC
pin.
The RAM clear function is enabled or disabled through
the RAM clear-enable bit (RCE; bank 1, register 04BH).
When this bit is set to logic 1, the 114 bytes of user RAM
is cleared (all bits set to 1) when an active-low transition
is sensed on the RCLR pin. This action has no effect on
either the clock/calendar settings or the contents of the
extended RAM. The RAM clear flag (RF, bank 1, register
04AH) is set when the RAM clear operation has been
completed. If VCC is present at the time of the RAM clear
and RIE = 1, the IRQ line is also driven low upon comple-
tion. Writing a zero to the RF bit clears the interrupt con-
dition. The IRQ line then returns to its inactive high level,
provided there are no other pending interrupts. Once the
RCLR pin is activated, all read/write accesses are locked
out for a minimum recover time, specified as tREC in
Electrical Characteristics.
When RCE is cleared to 0, the RAM clear function is
disabled. The state of the RCLR pin has no effect on the
contents of the user RAM, and transitions on the RCLR
pin have no effect on RF.
Extended RAM
The DS17x85/DS17x87 provide 2k, 4k, or 8k x 8 of onchip
SRAM that is controlled as nonvolatile storage sustained
from a lithium battery. On power-up, the RAM is taken
out of write-protect status by the internal power-OK sig-
nal (POK) generated from the write-protect circuitry. The
on-chip SRAM is accessed through the eight multiplexed
address/data lines AD7 to AD0. Three on-chip latch regis-
ters control access to the SRAM. Two registers are used
to hold the SRAM address, and the other register is used
to hold read/write data.
Access to the extended RAM is controlled by three of
the registers shown in Table 5. The extended registers in
bank 1 must first be selected by setting the DV0 bit in reg-
ister A to logic 1. The address of the RAM location to be
accessed must be loaded into the extended RAM address
registers located at 50h and 51h. The least significant
address byte should be written to location 50h, and the
most significant bits (right-justified) should be loaded in
location 51h. Data in the addressed location can be read
by performing a read operation from location 53h, or writ-
ten to by performing a write operation to location 53h.
Data in any addressed location can be read or written
repeatedly without changing the address in location 50h
and 51h.
To read or write consecutive extended RAM locations,
a burst mode feature can be enabled to increment the
extended RAM address. To enable the burst mode fea-
ture, set the BME bit in the Extended Control Register
4Ah to logic 1. With burst mode enabled, write the
extended RAM starting address location to registers 50h
and 51h. Then read or write the extended RAM data from/
to register 53h. The extended RAM address locations are
automatically incremented on the rising edge of RD or
WR only when register 53h is being accessed. See the
Burst Mode Timing Waveform.
DS17285/DS17287/
DS17485/DS17487/
DS17885/DS17887
Real-Time Clocks
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