Document Number: 94110 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 04-Nov-08 1
Schottky Rectifier, 1.0 A
10BQ015PbF
Vishay High Power Products
FEATURES
125 °C TJ operation (VR < 5 V)
Optimized for OR-ing applications
Ultralow forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Lead (Pb)-free (“PbF” suffix)
Designed and qualified for industrial level
DESCRIPTION
The 10BQ015PbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
PRODUCT SUMMARY
IF(AV) 1.0 A
VR15 V
Cathode Anode
SMB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 1.0 A
VRRM 15 V
IFSM tp = 5 µs sine 140 A
VF1.0 Apk, TJ = 125 °C 0.32 V
TJRange - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 10BQ015PbF UNITS
Maximum DC reverse voltage VR15 V
Maximum working peak reverse voltage VRWM 25
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TL = 84 °C, rectangular waveform 1.0 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
140
A
10 ms sine or 6 ms rect. pulse 40
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 2 mH 1.0 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 94110
2Revision: 04-Nov-08
10BQ015PbF
Vishay High Power Products Schottky Rectifier, 1.0 A
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
Notes
(1) thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
1 A TJ = 25 °C 0.35
V
2 A 0.44
1 A TJ = 125 °C 0.32
2 A 0.40
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
0.5 mA
TJ = 100 °C 12
Threshold voltage VF(TO) TJ = TJ maximum -V
Forward slope resistance rt-mΩ
Typical junction capacitance CTVR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C 390 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range TJ (1) - 55 to 125 °C
Maximum storage temperature range TStg - 55 to 150
Maximum thermal resistance,
junction to lead RthJL (2) DC operation
See fig. 4 36
°C/W
Maximum thermal resistance,
junction to ambient RthJA DC operation 80
Approximate weight 0.10 g
0.003 oz.
Marking device Case style SMB (similar to DO-214AA) V1C
dPtot
dTJ
------------- 1
RthJA
--------------<
Document Number: 94110 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 04-Nov-08 3
10BQ015PbF
Schottky Rectifier, 1.0 A Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
10
1
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward
Current (A)
0
0.1
0.2 0.4 0.6 0.81.0
TJ = 25 °C
TJ = 100 °C
TJ = 75 °C
10
1
0.1
VR - Reverse Voltage (V)
IR - Reverse Current (mA)
0
0.01
15312
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
69
1000
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
10
1531269
TJ = 25 °C
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single pulse
(thermal resistance)
D = 0.75
D = 0.33
D = 0.25
D = 0.20
D = 0.50
.
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
100
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4Revision: 04-Nov-08
10BQ015PbF
Vishay High Power Products Schottky Rectifier, 1.0 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
40
60
80
100
00.3 0.6 0.9 1.2 1.5
See note (1)
DC
Square wave (D = 0.50)
80 % rated VR applied
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
0
0.1
0.2
0.3
0.4
0.5
0 0.3 0.6 0.9 1.2 1.5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
DC
t
p
- Square Wave Pulse Duration (µs)
100
1000
IFSM - Non-Repetitive Surge Current (A)
10 100 1000 10 000
At any rated load condition and
with rated VRRM applied
following surge
10
Document Number: 94110 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 04-Nov-08 5
10BQ015PbF
Schottky Rectifier, 1.0 A Vishay High Power Products
ORDERING INFORMATION TABLE
1- Current rating
2- B = Single lead diode
3- Q = Schottky “Q” series
4- Voltage rating (015 = 15 V)
5- None = Box (1000 pieces)
TR = Tape and reel (3000 pieces)
6- None = Standard production
PbF = Lead (Pb)-free
Device code
51324
6
10 B Q 015 TR PbF
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95017
Part marking information http://www.vishay.com/doc?95029
Packaging information http://www.vishay.com/doc?95034
SPICE model http://www.vishay.com/doc?95355
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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