Single P-Channel Trench MOSFET, -30V, -11A, 12.1m General Description Features The MDS3604 uses advanced MagnaChip's MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. VDS = -30V ID = -11A @VGS = -10V RDS(ON) < 10.0m @VGS = -20V < 12.1m @VGS = -10V < 18.3m @VGS = -5V Applications 6(D) 7(D) 8(D) Load Switch General purpose applications Smart Module for Note PC Battery D 5(D) 2(S) G 4(G) 3(S) 1(S) S Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS 25 V Continuous Drain Current ID -11 A Pulsed Drain Current (Note 1) IDM -44 A Power Dissipation PD 2.5 W mJ Single Pulse Avalanche Energy (Note 2) Junction and Storage Temperature Range EAS 84.5 TJ, Tstg -55~150 Symbol Rating RJA 50 RJC 25 o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (Note 1) Unit o C/W Thermal Resistance, Junction-to-Case May. 2011 Version 1.1 1 MagnaChip Semiconductor Ltd. MDS3604- Single P-Channel Trench MOSFET, -30V, -11A, 12.1m MDS3604 Part Number Temp. Range MDS3604URH o -55~150 C Package Packing Quantity RoHS Status SOIC-8 Tape & Reel 3000 units Halogen Free Electrical Characteristics (Ta = 25oC unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = -250A, VGS = 0V -30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -1.0 -1.8 -3.0 Drain Cut-Off Current IDSS VDS = -30V, VGS = 0V - Gate Leakage Current IGSS VGS = 25V, VDS = 0V - - 0.1 VGS = -20V, ID = -12A - 8.6 10 VGS = -10V, ID = -12A - 10 12.1 VGS = -5V, ID = -10A 14.6 18.3 VDS = -5V, ID = -10A 25.5 - - 30.5 - - 5.2 - - 7.0 - - 1433 - - 212 - - 338 - Drain-Source ON Resistance Forward Transconductance RDS(ON) gFS -1 V A m S Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -15V, ID = -12A VGS = -10V nC Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Delay Time td(on) - 15.2 - Turn-On Rise Time tr - 12.9 - Turn-Off Delay Time td(off) - 50.6 - - 34.6 - - -0.73 -1.0 V - nC Turn-Off Fall Time VDS = -15V, VGS = 0V, f = 1.0MHz VGS = -10V ,VDS = -15V, RL = 1.25, RGEN = 3 tf pF ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = -1A, VGS = 0V IF = -12A, di/dt = 100A/s - 38.5 - 35.9 ns Note : 1. 2. Surface mounted FR-4 board by JEDEC (jesd51-7) Starting TJ=25C, L=1mH, IAS= -13A VDD=-20V, VGS=-10V. May. 2011 Version 1.1 2 MagnaChip Semiconductor Ltd. MDS3604- Single P-Channel Trench MOSFET, -30V, -11A, 12.1m Ordering Information 45 -10.0V 40 20 -5.0V -4.0V -6.0V 35 RDS(ON) [m ] -8.0V -ID [A] 30 25 VGS=-3.5V 20 15 10 VGS=-5V 15 VGS=-10V 10 5 VGS=-3.0V 5 VGS=-2.5V 0 0.0 0.5 1.0 1.5 2.0 0 2.5 0 10 20 -VDS [V] 40 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 30 *Note; ID=-12A *Note ; ID=-12A 1.6 25 1.4 RDS(ON) [m ] RDS(ON), (Normalized) Drain-Source On-Resistance [m ] 30 -ID [A] VGS=-10V 1.2 20 15 1.0 10 0.8 0.6 -50 -25 0 25 50 75 100 125 5 150 2 3 4 5 TJ, Junction Temperature [] 6 7 8 9 10 -VGS [V] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 30 Notes : * Note ; VDS=-5V VGS = 0V -IS, Reverse Drain Current [A] 25 -ID [A] 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 0 0.0 -VGS [V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, Source-Drain voltage [V] Fig.5 Transfer Characteristics May. 2011 Version 1.1 10 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDS3604- Single P-Channel Trench MOSFET, -30V, -11A, 12.1m 25 50 2.5n * Note :VDS = -15V ID = -12A Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 8 Capacitance [pF] 2.0n -VGS [V] 6 4 2 Ciss 1.5n 1.0n Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 500.0p Crss 0 0 10 20 30 0.0 40 0 5 10 15 -Qg [nC] Fig.7 Gate Charge Characteristics 10 20 25 30 -VDS [V] Fig.8 Capacitance Characteristics 2 16 100 us 14 1 ms 10 10 ms 1 12 10 0 10 1s Operation in This Area is Limited by R DS(on) 10s 100s DC -ID [A] -ID [A] 100 ms 8 6 10 -1 4 Single Pulse R ja=50/W Ta=25 10 2 -2 10 -1 10 0 10 1 10 0 2 25 50 75 100 125 150 Ta [] -VDS [V] Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Ambient Temperature Z Ja, Normalized Thermal Response [t] 1 10 0 10 D=0.5 0.2 -1 0.1 * Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JA* R JA(t) + TA R JA=50/W 10 0.05 0.02 -2 0.01 10 single pulse -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [s] Fig.11 Transient Thermal Response Curve May. 2011 Version 1.1 4 MagnaChip Semiconductor Ltd. MDS3604- Single P-Channel Trench MOSFET, -30V, -11A, 12.1m 10 8 Leads, SOIC Dimensions are in millimeters unless otherwise specified May. 2011 Version 1.1 5 MagnaChip Semiconductor Ltd. MDS3604- Single P-Channel Trench MOSFET, -30V, -11A, 12.1m Physical Dimensions MDS3604- Single P-Channel Trench MOSFET, -30V, -11A, 12.1m DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. May. 2011 Version 1.1 6 MagnaChip Semiconductor Ltd.