May. 2011 Version 1.1 MagnaChip Semiconductor Ltd.
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MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ
Absolute
Maximum
Ratings (
T
a
=25
o
C
unless otherwise noted
)
Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS ±25 V
Continuous Drain Current (Note 1) ID -11 A
Pulsed Drain Current IDM -44 A
Power Dissipation PD 2.5 W
Single Pulse Avalanche Energy (Note 2) EAS 84.5 mJ
Junction and Storage Temperature Range TJ, Tstg -55~150 oC
Thermal Characteri
stics
Characteristics Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient (Note 1) RθJA 50 oC/W
Thermal Resistance, Junction-to-Case RθJC 25
MDS3604
Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ
General Description
The MDS3604 uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance.
This device is suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
Features
VDS = -30V
ID = -11A @VGS = -10V
RDS(ON)
< 10.0mΩ @VGS = -20V
< 12.1mΩ @VGS = -10V
< 18.3mΩ @VGS = -5V
Applications
Load Switch
General purpose applications
Smart Module for Note PC Battery
1(S)
2(S)
3(S)
4(G)
8(D)
7(D)
6(D) 5(D)
D
G
S
G
S
May. 2011 Version 1.1 MagnaChip Semiconductor Ltd.
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MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ
Ordering Information
Part Number Temp. Range Package Packing Quantity RoHS Status
MDS3604URH -55~150oC SOIC-8 Tape & Reel 3000 units Halogen Free
Electrical Characteristics (T
a
= 25
o
C
unless otherwise noted)
Characteristics Symbol Test Condition Min
Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V -30 - - V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.0
-1.8 -3.0
Drain Cut-Off Current IDSS VDS = -30V, VGS = 0V - -1 µA
Gate Leakage Current IGSS VGS = ±25V, VDS = 0V - - ±0.1
Drain-Source ON Resistance RDS(ON)
VGS = -20V, ID = -12A - 8.6 10 mΩ
VGS = -10V, ID = -12A - 10 12.1
VGS = -5V, ID = -10A 14.6 18.3
Forward Transconductance gFS VDS = -5V, ID = -10A 25.5 - S
Dynamic Characteristics
Total Gate Charge Qg
VDS = -15V, ID = -12A
VGS = -10V
- 30.5 -
nC
Gate-Source Charge Qgs - 5.2 -
Gate-Drain Charge Qgd - 7.0 -
Input Capacitance Ciss
VDS = -15V, VGS = 0V,
f = 1.0MHz
- 1433 -
pF
Reverse Transfer Capacitance Crss - 212 -
Output Capacitance Coss - 338 -
Turn-On Delay Time td(on)
VGS = -10V ,VDS = -15V,
RL = 1.25Ω, RGEN = 3Ω
- 15.2 -
ns
Turn-On Rise Time tr - 12.9 -
Turn-Off Delay Time td(off) - 50.6 -
Turn-Off Fall Time tf - 34.6 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = -1A, VGS = 0V - -0.73 -1.0 V
Body Diode Reverse Recovery Time trr IF = -12A, di/dt = 100A/µs - 38.5 ns
Body Diode Reverse Recovery Charge Qrr - 35.9 - nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. Starting TJ=25°C, L=1mH, IAS= -13A VDD=-20V, VGS=-10V.
May. 2011 Version 1.1 MagnaChip Semiconductor Ltd.
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MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ
Fig.5 Transfer Characterist
ics
Fig.1 On-Region Characteristics
Fig.2 On
-
Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On
-
Resistance Variation with
Temperature
Fig.4 On
-
Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
0.0 0.5 1.0 1.5 2.0 2.5
0
5
10
15
20
25
30
35
40
45
50
-8.0V
-6.0V
VGS
=-3.0V
V
GS
=-2.5V
-10.0V
-5.0V -4.0V
V
GS
=-3.5V
-ID [A]
-V
DS
[V]
0 10 20 30 40
0
5
10
15
20
25
V
GS
=-5V
V
GS
=-10V
RDS(ON) [mΩ ]
-ID
[A]
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
*Note; ID=-12A
VGS=-10V
RDS(ON), (Normalized)
Drain-Source On-Resistance [mΩ ]
TJ, Junction Temperature [ ]℃
2 3 4 5 6 7 8 9 10
5
10
15
20
25
30
*Note ; ID=-12A
RDS(ON) [mΩ ]
-VGS [V]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
5
10
15
20
25
30
* Note ; VDS
=-5V
-ID [A]
-V
GS
[V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
100
101
Notes :※
VGS = 0V
-IS, Reverse Drain Current [A]
-VSD, Source-Drain voltage [V]
May. 2011 Version 1.1 MagnaChip Semiconductor Ltd.
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MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ
Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs.
Ambient Temperature
Fig.11 Transient Thermal Response Curve
0 5 10 15 20 25 30
0.0
500.0p
1.0n
1.5n
2.0n
2.5n
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;※
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
-VDS [V]
10-1 100101102
10-2
10-1
100
101
102
100 us
1 ms
100s
10s
1s
100 ms
DC
10 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
Rθ ja
=50 /W℃
Ta=25℃
-ID [A]
-VDS [V]
25 50 75 100 125 150
0
2
4
6
8
10
12
14
16
-ID [A]
Ta [ ]℃
10-5 10
-4 10
-3 10-2 10-1 10010110
2103
10
-2
10
-1
100
101
* Notes :
Duty Factor, D=t1
/t2
PEAK TJ = P
DM
* Zθ JA
* Rθ JA
(t) + TA
RΘ JA
=50 /W℃
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ Ja
, Normalized Thermal Response [t]
t1
, Rectangular Pulse Duration [s]
0 10 20 30 40
0
2
4
6
8
10
* Note :VDS = -15V
ID = -12A
-VGS [V]
-Qg [nC]
May. 2011 Version 1.1 MagnaChip Semiconductor Ltd.
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MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ
Physical Dimensions
8 Leads, SOIC
Dimensions are in millimeters unless otherwise specified
May. 2011 Version 1.1 MagnaChip Semiconductor Ltd.
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MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.
