
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter Symbol Unit
Repetitive peak reverse voltage
Continuous reverse voltage
RMS voltage
Maximum Forward rectified current
Maximum forward
voltage
@ IF=1.0A
Maximum reverse TJ=25°C
Reverse Voltage: 20 to 200 Volts
Forward Current: 1.0 Amp
RoHS Device
Dimensions in inches and (millimeter)
CDBMTS120-HF Thru. CDBMTS1200-HF
Page 1
QW-JB029
Low Profile SMD Schottky Barrier Rectifiers
REV: A
Comchip Technology CO., LTD.
SOD-123S
VRRM
VR
VRMS
IO
VF
IFSM
IR
CJ
TJ
CDBMTS
120-HF
CDBMTS
140-HF
CDBMTS
160-HF
CDBMTS
180-HF
CDBMTS
1100-HF
20
20
14
40
40
28
60
60
42
1.0
0.70
30
0.5
10
80
80
56
100
100
70
V
V
V
A
V
A
mA
°C
0.50 0.92
Operating temperature
Storage temperature range TSTG -65 to +175 °C
-55 to +125 -55 to +150
120 PF
CDBMTS
130-HF
30
30
21
CDBMTS
150-HF
50
50
35
Typical diode Junction capacitance
(F=1MHz and applied 4V DC reverse voltage)
TJ=100°C
Features
Mechanical data
-Case: Molded plastic, SOD-123S/MINI SMA
-Terminals: Solderable per MIL-STD-750, Method 2026.
-Polarity: Indicated by cathode band.
-Weight: 0.0155 grams approx.
-Mounting Position: any
-Epoxy: UL94-V0 rated flame retardant.
Halogen Free
-Low power loss,high efficiency.
-High current capability,low forward voltage drop.
-High surge capability.
-Guarding for overvoltage protection.
-Ultra high-speed switching.
-Low profile package is 40% thinner than standards
SOD-123.
-Silicon epitaxial planar chip,metal silicon junction.
-Lead-free part meets environmental standards of
MIL-STD-19500/228
CDBMTS
1150-HF
150
105
150
CDBMTS
1200-HF
200
140
200
Ma forward surge current ximum
8.3ms single half sine-wave
superimposed on rated load
(JEDEC methode)
Current (VR=VRRM)
0.85
better reverse -Excellent power dissipation offers
leakage current and thermal resistance.
0.154(3.9)
0.138(3.5) 0.018(0.45) Typ.
0.079(2.0)
0.063(1.6)
0.041(1.05)
0.033(0.85)
0.032(0.8) Typ.0.032(0.8) Typ.
0.037(0.95)
0.029(0.75)
0.119(3.0)
0.103(2.6)
0.009(0.22)
0.007(0.18)
Comchip
S M D D i o d e S p e c i a l i s t