©Semiconductor Components Industries, LLC, 2007
April, 2007 -- Rev. 4
1Publication Order Number:
MPSA27/D
MPSA27
Darlington Transistor
NPN Silicon
Features
These are Pb--Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector--Emitter Voltage VCES 60 Vdc
Emitter--Base Voltage VEBO 10 Vdc
Collector Current -- Continuous IC500 mAdc
Total Device Dissipation @ TA=25°C
Derate above 25°C
PD625
5.0
mW
mW/°C
Operating and Storage Junction
Temperature Range
TJ,T
stg --55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction--to--Ambient RθJA 200 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MPSA27RLRA TO--92 2000/Tape & Reel
MPSA27RLRAG TO--92
(Pb--Free)
2000/Tape & Reel
Device Package Shipping
MPSA27G TO--92
(Pb--Free)
5000 Units/Bulk
ORDERING INFORMATION
COLLECTOR
3
BASE
2
EMITTER
1
123
12
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO--92
CASE 29
STYLE 1
MPS
A27
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G= Pb--Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
MPSA27
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2
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector--Emitter Breakdown Voltage
(IC= 100 mAdc, VBE =0)
V(BR)CES 60 -- -- Vdc
Collector--Base Breakdown Voltage
(IC= 100 mAdc, IE=0)
V(BR)CBO 60 -- -- Vdc
Collector Cutoff Current
(VCB =30V,I
E=0)
(VCB =40V,I
E=0)
(VCB =50V,I
E=0)
ICBO -- -- 100 nAdc
Collector Cutoff Current
(VCE =30V,V
BE =0)
(VCE =40V,V
BE =0)
(VCE =50V,V
BE =0)
ICES -- -- 500 nAdc
Emitter Cutoff Current
(VEB =10Vdc)
IEBO -- -- 100 nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC=10mA,V
CE =5.0V)
(IC= 100 mA, VCE =5.0V)
hFE 10,000
10,000
--
--
--
--
--
Collector--Emitter Saturation Voltage
(IC= 100 mA, IB=0.1mAdc)
VCE(sat) -- -- 1.5 Vdc
Base--Emitter On Voltage
(IC= 100 mA, VCE =5.0Vdc)
VBE(on) -- -- 2.0 Vdc
SMALL--SIGNAL CHARACTERISTICS
Small Signal Current Gain
(IC=10mA,V
CE =5.0V,f=100MHz)
hfe 1.25 2.4 -- --
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MPSA27
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3
Figure 1. DC Current Gain Figure 2. “ON” Voltages
Figure 3. Collector Saturation Region Figure 4. High Frequency Current Gain
Figure 5. Active Region -- Safe Operating Area
100 1 k1.0
IC, COLLECTOR CURRENT (mA)
120
100
80
60
IC, COLLECTOR CURRENT (mA)
100 1 k1.0
1.4
1.0
0.8
0.6
100 5001.0
IB, BASE CURRENT (mA)
1.1
1.0
0.9
0.8
0.7
IC, COLLECTOR CURRENT (mA)
1.00.5
1.0
2.0
0.8
0.6
0.4
0.2
2.0200
2.0 101.0
VCE, COLLECTOR--EMITTER VOLTAGE (VOLTS)
1k
200
100
50
20
10
4.0
VCE =5.0V
hFE, DC CURRENT GAIN (k)
V, VOLTAGE (VOLTS)
V
h , SMALL--SIGNAL CURRENT GAIN
40
20
0102.0 3.0 20 30 200 500
TA= 125°C
TA=25°C
TA=--55°C
200 5002.0 10 20
1.2
1.6 TA=25°C
VBE(S) @I
C/IB=1.0k
VCE(S) @I
C/IB=1.0k
VBE(ON) @V
CE =5.0V
2.0 5.0 10 20 50 10 20 100 200
, COLLECTOR CURRENT (mA)IC
20 50
500
1.0 ms
1.0 s
TA=25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
100 ms
TC=25°C
TA=25°C
IC=10mA
IC= 100 mA IC= 250 mA
IC= 500 mA
1k0.1 0.2 0.5
1.3
1.2
1.4
1.6
1.5
, COLLECTOR--EMITTER VOLTAGE (VOLTS)
CE
4.0
5.0 50050
VCE =5.0V
f = 100 MHz
TA=25°C
6.0 40 60
3.0 30
fe
MPSA27
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4
PACKAGE DIMENSIONS
TO--92
(
TO--226
)
CASE 29--11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X--X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0 . 5 0 0 -- -- -- 1 2 . 7 0 -- -- --
L0 . 2 5 0 -- -- -- 6 . 3 5 -- -- --
N0.080 0.105 2.04 2.66
P-- -- -- 0 . 1 0 0 -- -- -- 2 . 5 4
R0.115 ------ 2.93 ------
V0 . 1 3 5 -- -- -- 3 . 4 3 -- -- --
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
RA
P
J
B
K
G
SECTION X--X
C
V
D
N
XX
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A4.45 5.20
B4.32 5.33
C3.18 4.19
D0.40 0.54
G2.40 2.80
J0.39 0.50
K12.70 ------
N2.04 2.66
P1.50 4.00
R2 . 9 3 -- -- --
V3 . 4 3 -- -- --
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MPSA27/D
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