4V Drive Nch+Nch MOSFET SH8K4 Dimensions (Unit : mm) Structure Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Packaging specifications Package Type Inner circuit (8) Taping (7) (6) (5) (8) (7) (6) (5) TB Code Basic ordering unit (pieces) 2500 SH8K4 2 2 Absolute maximum ratings (Ta=25C) <It is the same ratings for the Tr1 and Tr2.> Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature (1) (2) (3) (4) 1 1 Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg Limits 30 20 9.0 36 1.6 6.4 2 150 -55 to +150 Unit V V A A A A W C C Symbol Rth (ch-a) Limits 62.5 Unit C / W (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. 1 Pw 10s, Duty cycle 1% 2 MOUNTED ON A CERAMIC BOARD. Thermal resistance Parameter Channel to ambient MOUNTED ON A CERAMIC BOARD. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 - Rev.A SH8K4 Data Sheet Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Symbol Min. Typ. Max. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Parameter - 30 - 1.0 - - - 7.0 - - - - - - - - - - - - - - 12 16 17 - 1190 340 190 10 15 55 22 15 3.0 6.1 10 - 1 2.5 17 23 24 - - - - - - - - 21 - - Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Unit A V A V m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=9.0A, VGS=10V ID=9.0A, VGS=4.5V ID=9.0A, VGS=4V ID=9.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=4.5A, VDD 15V VGS=10V RL=3.33 RG =10 VDD 15V VGS=5V ID=9.0A Pulsed Body diode characteristics (Source-Drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Forward voltage Symbol VSD Min. - Typ. - Max. 1.2 Unit V Conditions IS=6.4A, VGS=0V Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.A SH8K4 Data Sheet Electrical characteristic curves 10000 100 10 0.01 0.1 1 10 td (off) 100 tr 10 td (on) 1 0.01 100 0.1 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) DRAIN CURRENT : ID (A) Ta=125C Ta=75C Ta=25C Ta= -25C 1 Ta=125C Ta=75C Ta=25C Ta= -25C 10 1 0.1 1 10 3 2 1 0 5 10 15 20 150 ID=9A ID=4.5A 50 0 0 2 4 6 8 10 12 14 1 VGS=0V Pulsed 0.01 0.0 16 100 VGS=4.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 10 1 0.1 1 10 Ta=125C Ta=75C Ta=25C Ta= -25C 0.1 0.5 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1000 Fig.6 Source Current vs. Source-Drain Voltage 1000 100 VGS=4V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 10 1 0.1 1 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current () Fig.8 Static Drain-Source On-State Resistance vs. Drain Current () Fig.9 Static Drain-Source On-State Resistance vs. Drain Current () www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/3 30 Fig.3 Dynamic Input Characteristics 10 100 25 TOTAL GATE CHARGE : Qg (nC) GATE-SOURCE VOLTAGE : VGS (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 100 4 Ta=25C Pulsed Fig.4 Typical Transfer Characteristics VGS=10V Pulsed 5 0 10 200 GATE-SOURCE VOLTAGE : VGS (V) 1000 6 Fig.2 Switching Characteristics Fig.1 Typical Capacitance vs. Drain-Source Voltage VDS=10V Pulsed 1 Ta=25C 9 VDD=15V ID=9A 8 RG=10 7 Pulsed DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) 10 GATE-SOURCE VOLTAGE : VGS (V) Coss Crss tf 1000 SOURCE CURRENT : Is (A) Ciss 1000 10 Ta=25C VDD=15V VGS=10V RG=10 Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) Ta=25C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 10000 10 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. R0039A Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ROHM Semiconductor: SH8K4TB1