HEXFET® Power MOSFET
Notes through are on page 2
Features and Benefits
Applications
• Control MOSFET for Buck Converters
• System/Load Switch
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 70°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C
Power Dissipation
f
P
D
@T
A
= 70°C
Power Dissipation
f
Linear Derating Factor
f
W/°C
T
Operating Junction and
T
STG
Storage Temperature Range
V
W
A
°C
Max.
8.8
d
15
d
76
±20
30
7.1
19
d
8.5
d
-55 to + 150
2.1
0.02
1.3
2mm x 2mm PQFN
G
D
D
S
D
D
S
G3S
D2
D1
4S
5D
6D
TOP VIEW
D
D
V
DS
30 V
V
GS
max
±20 V
R
DS(on) max
(@V
GS
= 10V)
16.0 mΩ
Q
g(typical)
(@V
GS
= 4.5V)
4.2 nC
I
D
(@T
c(Bottom)
= 25°C)
8.5
d
A
IRFHS8342PbF
Form Quantity
IRFHS8342TRPbF PQFN 2mm x 2mm Tape and Reel 4000
IRFHS8342TR2PbF PQFN 2mm x 2mm Tape and Reel 400 EOL notice # 259
Orderable part number Package Type
Standard Pack
Note
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
Features Resulting Benefits
Low R
DSon
(≤ 16.0mΩ) Lower Conduction Losses
Low Thermal Resistance to PCB (
≤
13°C/W) Enable better thermal dissipation
Low Profile (
≤
1.0 mm) results in Increased Power Density
Compatible with Existing Surface Mount Techniques Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
MSL1, Industrial Qualification Increased Reliability
IRFHS8342PbF
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D
S
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Current limited by package.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Rθ is measured at TJ of approximately 90°C.
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
(Bottom)
Junction-to-Case
g
–––
13
R
θ
JC
(Top)
Junction-to-Case
g
–––
90
°C/W
R
θ
JA
Junction-to-Ambient
f
–––
60
R
θ
JA
Junction-to-Ambient (<10s)
f
–––
42
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔΒV
DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C
R
DS (o n )
Static Drain-to-Source On-Resistance ––– 13 16
––– 20 25
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V
ΔV
GS(th)
Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 18 ––– ––– S
Q
g
Total Gate Charge ––– 4.2 ––– nC
Q
g
Total Gate Charge ––– 8.7 ––– V
DS
= 15V
Q
gs
Gate-to-Source Charge ––– 1.5 –––
Q
gd
Gate-to-Drain Charge ––– 1.3 –––
Q
oss
Output Charge ––– 3.0 ––– nC
R
G
Gate Resistance ––– 1.9
–––
Ω
t
d(on)
Turn-On Delay Time ––– 5.9 –––
t
r
Rise Time –––15–––
t
d(off)
Turn-Off Delay Time ––– 5.2 –––
t
f
Fall Time ––– 5.0 –––
C
iss
Input Capacitance ––– 600 –––
C
oss
Output Capacitance ––– 100 –––
C
rss
Reverse Transfer Capacitance ––– 46 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 11 17 ns
Q
rr
Reverse Recovery Charge ––– 13 20 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC V
GS
= 10V
V
GS
= 20V
V
GS
= -20V
––– ––– 76
––– ––– 8.5
d
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 8.5A
ed
Conditions
See Fig.17
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 8.5A
d
, V
DD
= 15V
di/dt = 330A/μs
e
T
J
= 25°C, I
S
= 8.5A
d
, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
R
G
=1.8Ω
V
DS
= 10V, I
D
= 8.5A
d
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= 8.5A
d
(See Fig. 6 & 16)
I
D
= 8.5A
d
V
GS
= 0V
V
DS
= 25V
V
DS
= 24V, V
GS
= 0V
VDS = VGS, ID = 25μA
V
GS
= 4.5V, I
D
= 6.8A
e
mΩ
V
DD
= 15V, V
GS
= 4.5V
e
V
GS
= 4.5V, V
DS
= 15V, I
D
= 8.5A
d
V
DS
= 16V, V
GS
= 0V
IRFHS8342PbF
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Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 10V
7.0V
5.0V
4.5V
3.5V
3.3V
2.8V
BOTTOM 2.5V
≤60μs PULSE WIDTH
Tj = 150°C
2.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 10V
7.0V
5.0V
4.5V
3.5V
3.3V
2.8V
BOTTOM 2.5V
≤60μs PULSE WIDTH
Tj = 25°C
2.5V
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 8.5A
VGS = 10V
2.0 3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage (V)
1.0
10
100
ID, Drain-to-Source Current
(A)
TJ = 25°C
TJ = 150°C
VDS = 15V
≤60μs PULSE WIDTH
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
024681012
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
14
VGS, Gate-to-Source Voltage (V)
VDS= 24V
VDS= 15V
VDS= 6.0V
ID= 8.5A
IRFHS8342PbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current vs.
Case (Bottom) Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 10. Threshold Voltage vs. Temperature
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VGS(th), Gate threshold Voltage (V)
ID = 25μA
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
DC
Limited by
Wire Bond
25 50 75 100 125 150
TC, Case Temperature (°C)
0
4
8
12
16
20
ID, Drain Current (A)
LIMITED BY PACKAGE
IRFHS8342PbF
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Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 14. Typical Power vs. Time
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
1E-5 1E-4 1E-3 1E-2 1E-1 1E+0
Time (sec)
0
100
200
300
400
500
600
Single Pulse Power (W)
0 5 10 15 20
VGS, Gate -to -Source Voltage (V)
5
10
15
20
25
30
35
RDS(on)
, Drain-to -Source On Resistance (
mΩ)
ID = 8.5A
TJ = 125°C
TJ = 25°C
010 20 30 40 50 60 70
ID, Drain Current (A)
5
10
15
20
25
30
RDS(on), Drain-to -Source On Resistance (
mΩ)
Vgs = 4.5V
Vgs = 10V
IRFHS8342PbF
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Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms
VGS
VDS
90%
10%
td(on) td(off)
trtf
Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
1K
VCC
DUT
0
L
S
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
RD
VGS
RG
D.U.T.
10V
+
-
VDD
VGS
IRFHS8342PbF
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PQFN 2x2 Outline Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
PQFN 2x2 Outline Part Marking
8342
IRFHS8342PbF
8 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
PQFN 2x2 Outline Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRFHS8342PbF
9 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
 Applicable version of JEDEC standard at the time of product release.
MS L 1
(per JEDEC J-STD-020D
††
)
RoHS compliant Yes
PQFN 2mm x 2mm
Qualification information
†
Moisture Sensitivity Level
Qualification level Industrial
†
(per JEDEC JES D47F
††
guidelines )
Date Comments
•
Updated data sheet with new IR corporate template.
• Updated Trr/Qrr test condition from "V
DD
= 13V" to "V
DD
= 15V" on page 2
• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
• Updated Qual level from "Consumer" to "Industrial" on page 1, 9
Revision History
9/9/2013
12/17/2013