ON Semiconductor BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector-Emitter Voltage VCEO 45 25 25 Vdc Collector-Emitter Voltage VCES 50 30 30 Vdc Emitter-Base Voltage VEBO 6.0 5.0 5.0 Vdc Collector Current -- Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.0 8.0 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 357 C/W Thermal Resistance, Junction to Case RJC 125 C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) BC237 BC238 BC239 V(BR)CEO 45 25 25 -- -- -- -- -- -- V Emitter-Base Breakdown Voltage (IE = 100 A, IC = 0) BC237 BC238 BC239 V(BR)EBO 6.0 5.0 5.0 -- -- -- -- -- -- V BC238 BC239 -- -- 0.2 0.2 15 15 nA (VCE = 50 V, VBE = 0) BC237 -- 0.2 15 (VCE = 30 V, VBE = 0) TA = 125C BC238 BC239 -- -- 0.2 0.2 4.0 4.0 (VCE = 50 V, VBE = 0) TA = 125C BC237 -- 0.2 4.0 Collector Cutoff Current (VCE = 30 V, VBE = 0) Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 3 ICES 196 A Publication Order Number: BC237/D BC237,A,B,C BC238B,C BC239C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max BC237A BC237B/238B BC237C/238C/239C -- -- -- 90 150 270 -- -- -- (IC = 2.0 mA, VCE = 5.0 V) BC237 BC237A BC237B/238B BC237C/238C/239C 120 120 200 380 -- 170 290 500 800 220 460 800 (IC = 100 mA, VCE = 5.0 V) BC237A BC237B/238B BC237C/238C/239C -- -- -- 120 180 300 -- -- -- -- -- 0.07 0.2 0.2 0.6 0.8 -- -- 0.6 -- 0.83 1.05 -- 0.55 -- 0.5 0.62 0.83 -- 0.7 -- BC237 BC238 BC239 -- -- -- 100 120 140 -- -- -- BC237 BC238 BC239 150 150 150 200 240 280 -- -- -- Unit ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) Collector-Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) hFE -- VCE(sat) BC237/BC238/BC239 BC237/BC239 BC238 Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VBE(sat) Base-Emitter On Voltage (IC = 100 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) VBE(on) V V V DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT MHz Collector-Base Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Cobo -- -- 4.5 pF Emitter-Base Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cibo -- 8.0 -- pF Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz) NF (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz, f = 200 Hz) dB BC239 BC237 BC238 BC239 Figure 7. http://onsemi.com 197 -- 2.0 4.0 -- -- -- 2.0 2.0 2.0 10 10 4.0 BC237,A,B,C BC238B,C BC239C 1.0 VCE = 10 V TA = 25C 1.5 0.9 0.8 1.0 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 0.8 0.6 0.4 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 VCE(sat) @ IC/IB = 10 0.1 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 Figure 2. "Saturation" and "On" Voltages 10 400 300 7.0 C, CAPACITANCE (pF) 200 VCE = 10 V TA = 25C 100 80 60 40 TA = 25C Cib 5.0 3.0 Cob 2.0 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 1.0 0.4 50 Figure 3. Current-Gain -- Bandwidth Product r b, BASE SPREADING RESISTANCE (OHMS) BANDWIDTH PRODUCT (MHz) VBE(sat) @ IC/IB = 10 0.2 0.3 0.2 0.2 f T, CURRENT-GAIN TA = 25C 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitances 170 160 150 VCE = 10 V f = 1.0 kHz TA = 25C 140 130 120 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc) 5.0 Figure 5. Base Spreading Resistance http://onsemi.com 198 10 20 40