Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol BC237 BC238 BC239 Unit
Collector–Emitter Voltage VCEO 45 25 25 Vdc
Collector–Emitter Voltage VCES 50 30 30 Vdc
Emitter–Base V oltage VEBO 6.0 5.0 5.0 Vdc
Collector Current — Continuous IC100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD350
2.8 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.0
8.0 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RJA 357 °C/W
Thermal Resistance, Junction to Case RJC 125 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC237
(IC = 2.0 mA, IB = 0) BC238
BC239
V(BR)CEO 45
25
25
—
—
—
—
—
—
V
Emitter–Base Breakdown V oltage BC237
(IE = 100 A, IC = 0) BC238
BC239
V(BR)EBO 6.0
5.0
5.0
—
—
—
—
—
—
V
Collector Cutoff Current
(VCE = 30 V, VBE = 0) BC238
BC239
(VCE = 50 V, VBE = 0) BC237
(VCE = 30 V, VBE = 0) TA = 125°C BC238
BC239
(VCE = 50 V, VBE = 0) TA = 125°C BC237
ICES —
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
15
15
15
4.0
4.0
4.0
nA
µA
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 3 196 Publication Order Number:
BC237/D
BC237,A,B,C
BC238B,C
BC239C
CASE 29–11, STYLE 17
TO–92 (TO–226AA)
123
COLLECTOR
1
2
BASE
3
EMITTER
BC237,A,B,C BC238B,C BC239C
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µA, VCE = 5.0 V) BC237A
BC237B/238B
BC237C/238C/239C
(IC = 2.0 mA, VCE = 5.0 V) BC237
BC237A
BC237B/238B
BC237C/238C/239C
(IC = 100 mA, VCE = 5.0 V) BC237A
BC237B/238B
BC237C/238C/239C
hFE —
—
—
120
120
200
380
—
—
—
90
150
270
—
170
290
500
120
180
300
—
—
—
800
220
460
800
—
—
—
—
Collector–Emitter On Voltage
(IC = 10 mA, IB = 0.5 mA) BC237/BC238/BC239
(IC = 100 mA, IB = 5.0 mA) BC237/BC239
BC238
VCE(sat) —
—0.07
0.2 0.2
0.6
0.8
V
Base–Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VBE(sat) —
—0.6
—0.83
1.05
V
Base–Emitter On Voltage
(IC = 100 µA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
VBE(on) —
0.55
—
0.5
0.62
0.83
—
0.7
—
V
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) BC237
BC238
BC239
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC237
BC238
BC239
fT—
—
—
150
150
150
100
120
140
200
240
280
—
—
—
—
—
—
MHz
Collector–Base Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz) Cobo — — 4.5 pF
Emitter–Base Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cibo — 8.0 — pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ,
f = 1.0 kHz) BC239
(IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 kΩ,
f = 1.0 kHz, ∆f = 200 Hz) BC237
BC238
BC239
NF
—
—
—
—
2.0
2.0
2.0
2.0
4.0
10
10
4.0
dB
Figure 7.
BC237,A,B,C BC238B,C BC239C
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198
2.0
1.5
1.0
0.2
0.3
0.4
0.6
0.8
2000.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
hFE, NORMALIZED DC CURRENT GAIN
VCE = 10 V
TA = 25°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
00.20.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V, VOLTAGE (VOLTS)
TA = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
400
20
30
40
60
80
100
200
300
0.5 1.00.7 2.0 3.0 5.0 7.0 10 20 30 50
IC, COLLECTOR CURRENT (mAdc)
Figure 3. Current–Gain — Bandwidth Product
fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
VCE = 10 V
TA = 25°C
TA = 25°C
Cib
Cob
rb, BASE SPREADING RESISTANCE (OHMS)
170
160
150
140
130
120 100.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Base Spreading Resistance
VCE = 10 V
f = 1.0 kHz
TA = 25°C
