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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 59. Ordering Informations Part Number Marking J105 J105 J106 J106 J107 J107 Package Packing Method TO-92 3L Bulk Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA -55 to +150 C TJ, Tstg Operating and Storage Junction Temperature Range Notes: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These ratings are based on a maximum junction temperature of 150C. 3. These are steady-state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. (c) 1997 Fairchild Semiconductor Corporation J105 / J106 / J107 Rev. 1.1.1 www.fairchildsemi.com 1 J105 / J106 / J107 -- N-Channel Switch September 2013 Values are at TA = 25C unless otherwise noted. Symbol PD RJC Parameter Maximum Units Power Dissipation 625 mW Derate above 25C 5.0 mW/C Thermal Resistance, Junction to Case 125 C/W RJA Thermal Resistance, Junction to Ambient 357 C/W Note: 4. PCB board size FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)GSS Gate-Source Breakdown Voltage IGSS Gate Reverse Current ID(off) Gate-Source Cut-Off Voltage VGS(off) Gate-Source Cut-Off Voltage IG = -10 A, VDS = 0 -25 V VGS = -15 V, VDS = 0 -3.0 VGS = -15 V, VDS = 0, TA = 100C -200 VDS = -5.0 V, VGS = -10 V VDS = 5.0 V, ID = 1.0 mA nA 3.0 nA J105 -4.5 -10.0 J106 -2.0 -6.0 J107 -0.5 -4.5 J105 500 J106 200 J107 100 V ON CHARACTERISTICS IDSS RDS(on) Zero-Gate Voltage Drain Current(5) Drain-Source On Resistance VDS = 15 V, IGS = 0 VDS 0.1 V, VGS = 0 mA J105 3.0 J106 6.0 J107 8.0 SMALL SIGNAL CHARACTERISTICS Cdg(on) Drain-Gate On Capacitance Csg(on) Source-Gate On Capacitance Cdg(off) Drain-Gate Off Capacitance Csg(off) Source-Gate Off Capacitance 160 VDS = 0, VGS = 10 V, f = 1.0 MHz 35 pF pF pF Note: 5. Pulse test: pulse width 300 s, duty cycle 2.0%. (c) 1997 Fairchild Semiconductor Corporation J105 / J106 / J107 Rev. 1.1.1 www.fairchildsemi.com 2 J105 / J106 / J107 -- N-Channel Switch Thermal Characteristics(4) 500 350 o TA = 25 C o TA = 25 C VGS(off) = -4.5 V max VGS(off) = -4.5 V max VGS = 0 V Drain Current, ID [mA] Drain Current, ID [mA] 300 250 200 VGS = -1 V 150 VGS = 0 V VGS = -0.1 V VGS = -0.2 V VGS = -0.3 V VGS = -0.4 V VGS = -0.5 V 400 300 200 100 100 VGS = -2 V 50 0 0.00 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 0 2.00 1 2 3 4 5 Drain-Source Voltage, VDS [V] Drain-Source Volatage, VDS[V] Figure 1. Common Drain-Source Characteristics Figure 2. Common Drain-Source Characteristics Figure 3. Parameter Interactions Figure 4. Capacitance vs. Voltage Figure 5. Normalized Drain Resistance vs. Bias Voltage Figure 6. On Resistance vs. Drain Current (c) 1997 Fairchild Semiconductor Corporation J105 / J106 / J107 Rev. 1.1.1 www.fairchildsemi.com 3 J105 / J106 / J107 -- N-Channel Switch Typical Performance Characteristic Figure 8. Transconductance vs. Drain Current Figure 7. Output Conductance vs. Drain Current PD - Power Dissipation [W] 1.00 0.75 TO-92 0.50 0.25 0.00 0 25 50 75 100 125 150 175 200 o Tem perature [ C] Figure 9. Noise Voltage vs. Frequency (c) 1997 Fairchild Semiconductor Corporation J105 / J106 / J107 Rev. 1.1.1 Figure 10. Power Dissipation vs. Ambient Temperature www.fairchildsemi.com 4 J105 / J106 / J107 -- N-Channel Switch Typical Performance Characteristic (Continued) J105 / J106 / J107 -- N-Channel Switch Physical Dimensions TO-92 D Figure 11. 3-LEAD, TO-92, MOLDED, STD STRAIGHT LD (NO EOL CODE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf. (c) 1997 Fairchild Semiconductor Corporation J105 / J106 / J107 Rev. 1.1.1 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AX-CAP(R)* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC F-PFS FRFET(R) SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mWSaver(R) OptoHiT OPTOLOGIC(R) OPTOPLANAR(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FAST(R) FastvCore FETBench FPS Sync-LockTM (R) PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START Solutions for Your Success SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET (R)* TinyBoost(R) TinyBuck(R) TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT(R)* PSerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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